Beam propagation modelling of tapered waveguide lasers

A dynamic beam propagation model allows design optimization of high power low divergence tapered waveguide lasers. The model is extended to include spatially-resolved temperature profiles and a temperature dependent gain. Using this model, design parameters such as the optimum facet reflectivity, taper angle, and waveguide dimension can be calculated for low far-field divergence and high continuous wave power.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

Design of high power tapered waveguide semiconductor lasers

An advanced beam propagation model was developed to show that the far field narrows with good suppression of higher order modes for an appropriate temperature rise, without significant power penalty. To verify the accuracy of the model, the dependence of far field pattern on bias conditions were assessed both experimentally and theoretically, initially under pulsed conditions to reduce thermal effects. The results highlight the optimum taper angle and the role of local heating effects.

Mode-controlled vertical cavity surface emitting lasers for bandwidth enhancement of multimode fibre links

A GaAs Vertical Cavity Surface Emitting Laser (VCSEL) that generates controlled modes offset from the center is described. The device is modulated with a 27-1 pseudo-random bit sequence and its output is transmitted along a 1 km length of multimode fiber (MMF). Open eyes are obtained for data rates as high as 1.4Gb/s. The transmission bandwidth increases by a factor of 4 over over-filled launch (OFL). This enhancement is stable against environment influences on the fiber.

High bandwidth multimode fiber links using subcarrier multiplexing in vertical-cavity surface-emitting lasers

The usage of subcarrier multiplexing (SCM) techniques to allow link transmission in excess of the specified fiber bandwidth is described. A series of 200-Mbit/s channels with carrier frequencies of up to more than twenty times the 3-dB fiber bandwidth have been successfully used, the maximum being limited by the available electronics. To assess the transmission of the fiber, digitally modulated channels are placed on high frequency carrier signals and then used to modulate a vertical-cavity surface-emitting lasers (VCSEL).

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Spatial emission control of vertical cavity surface emitting lasers to provide bandwidth gain in multimode fibre links using a simple alignment technique

Etched VCSEL sources are reported which avoid bandwidth collapse in multimode fibre using a simple coupling technique to control the launch. These devices have allowed better than over-filled launch bandwidth for alignment tolerances of ±7 microns.

Wavelength conversion, regeneration and tone manipulation using integrated semiconductor lasers and amplifiers

An integrated semiconductor optical amplifier/distributed feedback (SOA/DFB) laser that show promise as a simple all-optical wavelength conversion device together with useful simultaneous functions such as 2R regeneration and the ability to remove a wavelength identifying tone is presented. Wavelength conversion performance at 20Gb/s and 40Gb/s can be obtained with this laser.

Feasibility of AlGaInAs lasers for high speed uncooled communication systems

The feasibility of using AlGaInAs lasers for high-speed modulation at high temperatures was evaluated and compared with performance of GaInAsP devices. Both drift-diffusion and rate equation simulation were involved so that the temperature dependence of material parameters was found in terms of overall dynamic performance. Differential gain was estimated by means of drift-diffusion simulations.

10-Gbits/s all-optical 3R regeneration and format conversion using a gain-switched DFB laser

A strain-compensated multiple quantum well device is used as a DFB laser, this has been optimized for low jitter gain switched operation at 10 GHz. The signal is transmitted down 80 km of standard fiber then amplified, filtered and polarization controlled before being injected into a DFB laser. The purpose of this regeneration process is to gain switch the DFB with the extracted clock signal in order to retime the converted signal. This process also simultaneously converts the input NRZ format to an output RZ data to format and results in a signal whose optical power and extinction ratio are considerably improved by the regeneration process.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.

High speed reconfiguration of dual-purpose vertical cavity surface emitting laser/detector

High-speed configuration results of a conventional 850 nm VCSEL that is modified to operate as an efficient avalanche detector as well as a laser are discussed. The measured laser-to-detector reconfiguration delay of 3.2 ns is longer than the 1.2 ns detector-to-detector reconfiguration delay.

Uncooled, 10Gb/s operation of two-contact InGaAsP lasers with low drive current

Uncooled, high-speed modulation of two-contact lasers is presented with ultra-low drive currents. Practical operation at 10Gb/s up to temperatures of 85°C and extinction ratios of 6dB are found for current swings which are less than 40% of conventional lasers.

Waveguide lasers in Er:Yb-doped phosphate glass fabricated by femtosecond laser writing

Advanced waveguide lasers, operating both in continuous wave and pulsed regimes, have been realized in an active phosphate glass by direct writing with femtosecond laser pulses. Stable single mode operation was obtained; the laser provided more than 50 m W in single longitudinal and transverse mode operation with 21% slope efficiency. Furthermore, by combining a high gain waveguide and an innovated fiber-pigtailed saturable absorber based on carbon nanotubes, a mode-locked ring laser providing transform limited 1.6 ps pulses was demonstrated. © 2007 IEEE.