958 resultados para SSC RF cavity
Resumo:
Plusieurs cibles thérapeutiques dans le développement de médicaments contre l’obésité visent une diminution de l’appétit et de la masse adipeuse et à augmenter la dépense énergétique. L’appétit et le métabolisme énergétique sont régulés par certains neuropeptides qui agissent au niveau du système nerveux central, notamment dans l’hypothalamus. Parmi ces neuropeptides, les peptides RF-amide ou QRFP (pyroglutamylated RF-amide peptides), ainsi nommés par la présence du motif conservé Arg-Phe-NH2 dans le domaine C-terminal, induisent une hyperphagie et une augmentation de la masse adipeuse lorsqu’administrés par voie centrale. Les formes bioactives de ces peptides comprennent principalement 43 (QRFP-43) et 26 (QRFP-26) acides aminés. Outre les peptides QRFP, leurs récepteurs, les GPR103 de la famille des récepteurs à 7 passages transmembranaires couplés aux protéines G, sont exprimés dans l’hypothalamus. Plus récemment, des études ont montré la sécrétion de ces neuropeptides, et la présence du GPR103, dans le tissu adipeux. Cependant, le rôle de la voie signalétique (QRFP/GPR103) dans la régulation du métabolisme lipidique au niveau périphérique est peu connu. Les travaux de cette thèse ont porté sur la caractérisation des effets adipogéniques périphériques des neuropeptides QRFP. En premier lieu, nos travaux ont montré que les adipocytes 3T3-L1 et les adipocytes murins isolés des dépôts adipeux blancs expriment le prépro-QRFP et uniquement le récepteur GPR103B, un des deux sous-types de récepteurs présents chez la souris. De plus, nous avons montré que l’expression du récepteur est régulée par une diète riche en lipides réduisant l’expression du prépro-QRFP, mais augmentant celle du GPR103B dans les dépôts lipidiques. Chez l’humain, les adipocytes de l’omentum expriment autant le GPR103 que le prépro-QRFP. Nous avons de plus étudié la fonctionnalité du GPR103B dans les adipocytes 3T3-L1 par l’utilisation d’ARN interférents. Nous avons observé que ce récepteur médie les effets adipogéniques des QRFPs en augmentant l’expression du récepteur nucléaire PPAR-gamma (peroxisome proliferator-activated receptor gamma) et le facteur de transcription C/EBP-alpha (CCAAT-enhancer binding protein alpha) résultant en une accumulation des triglycérides. Nous avons aussi mis en évidence les effets anti-lipolytiques des QRFPs. En effet, les QRFP inhibent fortement la lipolyse induite avec l’isoprotérénol. L’étude des mécanismes moléculaires à l’origine des effets anti-lipolytiques du QRFP-43 a montré l’activation de la voie de signalisation PI3-K/PKB (phosphatidylinositol 3-kinase/protéine kinase B) en réponse à la stimulation du GPR103B. La réponse anti-lipolytique induite par le QRFP-43 est associée à une diminution de la phosphorylation de la périlipine A (PLIN1a) et de la lipase hormono-sensible (HSL). Nos études ont élucidé les mécanismes conduisant à l’inhibition de la phosphorylation de la PLIN1a en réponse à l’activation du GPR103B, impliquant l’inhibition de la migration de la cavéoline 1 et de la sous unité catalytique de la protéine kinase A (PKA) au niveau des gouttelettes lipidiques, ainsi que l’inhibition de l’activité des Src kinases et de la protéine kinase C (PKC). En conclusion, nos travaux ont montré que les QRFP-43 et -26 exercent un effet adipogénique et anti-lipolytique dans les adipocytes, mettant ainsi en évidence le rôle des neuropeptides QRFPs dans la régulation du métabolisme lipidique au niveau adipocytaire.
Resumo:
Le but de cette thèse était d’étudier la dynamique de croissance par pulvérisation par plasma RF magnétron des couches minces à base d’oxyde de zinc destinées à des applications électroniques, optoélectroniques et photoniques de pointe. Dans ce contexte, nous avons mis au point plusieurs diagnostics permettant de caractériser les espèces neutres et chargées dans ce type de plasmas, notamment la sonde électrostatique, la spectroscopie optique d’émission et d’absorption, ainsi que la spectrométrie de masse. Par la suite, nous avons tenté de corréler certaines caractéristiques physiques de croissance des couches de ZnO, en particulier la vitesse de dépôt, aux propriétés fondamentales du plasma. Nos résultats ont montré que l’éjection d’atomes de Zn, In et O au cours de la pulvérisation RF magnétron de cibles de Zn, ZnO et In2O3 n’influence que très peu la densité d’ions positifs (et donc la densité d’électrons en supposant la quasi-neutralité) ainsi que la fonction de distribution en énergie des électrons (populations de basse et haute énergie). Cependant, le rapport entre la densité d’atomes d’argon métastables (3P2) sur la densité électronique décroît lorsque la densité d’atomes de Zn augmente, un effet pouvant être attribué à l’ionisation des atomes de Zn par effet Penning. De plus, dans les conditions opératoires étudiées (plasmas de basse pression, < 100 mTorr), la thermalisation des atomes pulvérisés par collisions avec les atomes en phase gazeuse demeure incomplète. Nous avons montré que l’une des conséquences de ce résultat est la présence d’ions Zn+ suprathermiques près du substrat. Finalement, nous avons corrélé la quantité d’atomes de Zn pulvérisés déterminée par spectroscopie d’émission avec la vitesse de dépôt d’une couche mince de ZnO mesurée par ellipsométrie spectroscopique. Ces travaux ont permis de mettre en évidence que ce sont majoritairement les atomes de Zn (et non les espèces excitées et/ou ioniques) qui gouvernent la dynamique de croissance par pulvérisation RF magnétron des couches minces de ZnO.
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Materials exhibiting transparency and electrical conductivity simultaneously, transparent conductors, Transparent conducting oxides (TCOs), which have high transparency through the visible spectrum and high electrical conductivity are already being used in numerous applications. Low-emission windows that allow visible light through while reflecting the infrared, this keeps the heat out in summer, or the heat in, in winter. A thin conducting layer on or in between the glass panes achieves this. Low-emission windows use mostly F-doped SnO2. Most of these TCO’s are n type semiconductors and are utilized in a variety of commercial applications, such as flat-panel displays, photovoltaic devices, and electrochromic windows, in which they serve as transparent electrodes. Novel functions may be integrated into the materials since oxides have a variety of elements and crystal structures, providing great potential for realizing a diverse range of active functions. However, the application of TCOs has been restricted to transparent electrodes, notwithstanding the fact that TCOs are n-type semiconductors. The primary reason is the lack of p-type TCOs, because many of the active functions in semiconductors originate from the nature of the pn-junction. In 1997, H. Kawazoe et al.[2] reported CuAlO2 thin films as a first p-type TCO along with a chemical design concept for the exploration of other p-type TCOs.
Resumo:
ZnGa2O4:Dy3+ phosphor thin films were deposited on quartz substrates by radio frequency rf magnetron sputtering and the effect of substrate temperature on its structural and luminescent properties was investigated. Polycrystalline film could be deposited even at room temperature. The crystalline behavior, Zn/Ga ratio, and surface morphology of the films were found to be highly sensitive to substrate temperature. Under UV illumination, the as-deposited films at and above 300°C gave white luminescence even without any postdeposition treatments. The photoluminescent PL emission can be attributed to the combined effect of multicolor emissions from the single luminescence center Dy3+ via host-sensitization. Maximum PL emission intensity was observed for the film deposited at 600°C, and the CIE chromaticity coordinates of the emission were determined to be x,y = 0.34, 0.31 .
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In this paper, the generation of a multiwavelength laser source from a Brillouin -Erbium fiber laser in the long wavelength band (L-band) region is experimentally demonstrated. The proposed laser system utilizes a Fabrv-Perot cavity formed by fiber-loop mirrors. Twenty-four lines of Brillouin-Stokes with line spacings of 10 GHz are obtained in the L-band region
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The closed form expression for the radiated power of a half-wave microstrip patch is modified to calculate the impedance bandwidth of a printed dipole. Analyses of cavity backed flared and end-loaded printed dipoles are presented
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The main objective of this thesis work is to optimize the growth conditions for obtaining crystalline and conducting Lao.5Sro.5Co03 (LSCO) and Lao.5Sro.5Coo.5.5Nio.5O3 (LSCNO) thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The thin films were used as electrodes for the fabrication of ferroelectric capacitors using BaO.7SrO.3 Ti03 (BST) and PbZro.52 Tio.4803 (PZT). The structural and transport properties of the La1_xSrxCo03 and Lao.5Sro.5Co1_xNix03 are also investigated. The characterization of the bulk and the thin films were performed using different tools. A powder X-ray diffractometer was used to analyze the crystalline nature of the material. The transport properties were investigated by measuring the temperature dependence of resistivity using a four probe technique. The magnetoresistance and thermoelectric power were also used to investigate the transport properties. Atomic force microscope was used to study the surface morphology and thin film roughness. The ferroelectric properties of the capacitors were investigated using RT66A ferroelectric tester.
Resumo:
The main objective of the present study is to understand different mechanisms involved in the production and evolution of plasma by the pulsed laser ablation and radio frequency magnetron sputtering. These two methods are of particular interest, as these are well accomplished methods used for surface coatings, nanostructure fabrications and other thin film devices fabrications. Material science researchers all over the world are involved in the development of devices based on transparent conducting oxide (TCO) thin films. Our laboratory has been involved in the development of TCO devices like thin film diodes using zinc oxide (ZnO) and zinc magnesium oxide (ZnMgO), thin film transistors (TFT's) using zinc indium oxide and zinc indium tin oxide, and some electroluminescent (EL) devices by pulsed laser ablation and RF magnetron sputtering.In contrast to the extensive literature relating to pure ZnO and other thin films produced by various deposition techniques, there appears to have been relatively little effort directed towards the characterization of plasmas from which such films are produced. The knowledge of plasma dynamics corresponding to the variations in the input parameters of ablation and sputtering, with the kind of laser/magnetron used for the generation of plasma, is limited. To improve the quality of the deposited films for desired application, a sound understanding of the plume dynamics, physical and chemical properties of the species in the plume is required. Generally, there is a correlation between the plume dynamics and the structural properties of the films deposited. Thus the study of the characteristics of the plume contributes to a better understanding and control of the deposition process itself. The hydrodynamic expansion of the plume, the composition, and SIze distribution of clusters depend not only on initial conditions of plasma production but also on the ambient gas composition and pressure. The growth and deposition of the films are detennined by the thermodynamic parameters of the target material and initial conditions such as electron temperature and density of the plasma.For optimizing the deposition parameters of various films (stoichiometric or otherwise), in-situ or ex-situ monitoring of plasma plume dynamics become necessary for the purpose of repeatability and reliability. With this in mind, the plume dynamics and compositions of laser ablated and RF magnetron sputtered zinc oxide plasmas have been investigated. The plasmas studied were produced at conditions employed typically for the deposition of ZnO films by both methods. Apart from this two component ZnO plasma, a multi-component material (lead zirconium titanate) was ablated and plasma was characterized.
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The performance of circular, rectangular and cross irises for the coupling of microwave power to rectangular waveguide cavity resonators is discussed. For the measurement of complex permittivity of materials using cavity perturbation techniques, rectangular cavities with high Q-factors are required. Compared to the conventional rectangular and circular irises, the cross Iris coupling structure provides very high loaded quality factor for all the resonant frequencies. The proposes cross iris coupling structure enhances the accuracy of complex permittivity measurements.
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A novel cavity perturbation technique using coaxial cavity resonators for the measurement of complex permittivity of liquids is presented. The method employs two types of resonators (Resonator I and Resonator II). Resonator I operates in the frequency range 600 MHz-7 GHz and resonator II operates in the frequency range 4 GHz-14 GHz. The introduction of the capillary tube filled with the sample liquid into the coaxial resonator causes shifts in the resonance frequency and loaded Q-factor of the resonator. The shifts in the resonance frequency and loaded Q-factor are used to determine the real and imaginary parts of the complex permittivity of the sample liquid, respectively. Using this technique, the dielectric parameters of water and nitrobenzene are measured. The results are compared with those obtained using other standard methods. The sources of errors are analyzed.
Resumo:
It is found that crystals of molecular nanomagnets exhibit enhanced magnetic relaxation when placed inside a resonant cavity. A strong dependence of the magnetization curve on the geometry of the cavity has been observed, providing indirect evidence of the coherent microwave radiation by the crystals. A similar dependence has been found for a crystal placed between the Fabry-Perot superconducting mirrors.
Resumo:
Antennas, the key element in wireless communication devices had undergone amazing developments especially in the direction of compactness and safety aspects. In the last two decades, the use of the cellular phones has become the most popular mode of communication across the globe. At the same time, the concerns about the radiation effects have increased in the general public. The main concern of this thesis is to develop a mobile antenna which gives reduced RF interference to the user. The reduction of the power absorbed by the user can tremendously avoid any possible health hazards. The radiation characteristic of a monopole antenna is modified with good radiation characteristics suitable for a mobile handset. The modification is implemented by using different resonating structures which provides reduced radiation along one direction. The direction of less radiation can be changed by modifying the planar antenna structure to a ground folded antenna. This modified structure with excellent radiation characteristic is suitable for modern wireless handheld devices with less user RF interference. Specific Absorption Rate (SAR) is an important parameter for mobile handset. The SAR is estimated for the newly developed antenna for different conditions and discussed in this thesis.
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Polyaniline is a widely studied conducting polymer and is a useful material in its bulk and thin film form for many applications, because of its excellent optical and electrical properties. Pristine and iodine doped polyaniline thin films were prepared by a.c. and rf plasma polymerization techniques separately for the comparison of their optical and electrical properties. Doping of iodine was effected in situ. The structural properties of these films were evaluated by FTIR spectroscopy and the optical band gap was estimated from UV-vis-NIR measurements. Comparative studies on the structural, optical and electrical properties of a.c. and rf polymerization are presented here. It has been found that the optical band gap of the polyaniline thin films prepared by rf and a.c. plasma polymerization techniques differ considerably and the band gap is further reduced by in situ doping of iodine. The electrical conductivity measurements on these films show a higher value of electrical conductivity in the case of rf plasma polymerized thin films when compared to the a.c. plasma polymerized films. Also, it is found that the iodine doping enhanced conductivity of the polymer thin films considerably. The results are compared and correlated and have been explained with respect to the different structures adopted under these two preparation techniques
Resumo:
Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.
Resumo:
Conjugated polymers in the form of thin films play an important role in the field of materials science due to their interesting properties. Polymer thin films find extensive applications in the fabrication of devices, such as light emitting devices, rechargeable batteries, super capacitors, and are used as intermetallic dielectrics and EMI shieldings. Polymer thin films prepared by plasma-polymerization are highly cross-linked, pinhole free, and their permittivity lie in the ultra low k-regime. Electronic and photonic applications of plasma-polymerized thin films attracted the attention of various researchers. Modification of polymer thin films by swift heavy ions is well established and ion irradiation of polymers can induce irreversible changes in their structural, electrical, and optical properties. Polyaniline and polyfurfural thin films prepared by RF plasmapolymerization were irradiated with 92MeV silicon ions for various fluences of 1×1011 ions cm−2, 1×1012 ions cm−2, and 1×1013 ions cm−2. FTIR have been recorded on the pristine and silicon ion irradiated polymer thin films for structural evaluation. Photoluminescence (PL) spectra were recorded for RF plasma-polymerized thin film samples before and after irradiation. In this paper the effect of swift heavy ions on the structural and photoluminescence spectra of plasma-polymerized thin films are investigated.