Individualization and Electrical Characterization of SiGe Nanowires

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective

Magneto-optic current sensor with Faraday mirror for linear birefringence compensation

Fiber optic sensors have some advantages in subjects related with electrical current and magnetic field measurement. In spite of the optical fiber utilization advantages we have to take into account undesirable effects, which are present in real non-ideal optical fibers. In telecommunication and sensor application fields the presence of inherent and induced birefringence is crucial. The presence of birefringence may cause an undesirable change in the polarization state. In order to compensate the linear birefringence a promising method has been chosen. This method employs orthogonal polarization conjugation in the back propagation direction of the light wave in the fiber. A study and a simulation of an experimental setup are realized with the advantage of a significant sensitivity improvement.

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Sensor magneto-óptico de corriente con supresión de birrefringencia lineal mediante espejo de Faraday

Fiber optic sensors have some advantages in subjects related with electrical current and magnetic field measurement. In spite of the optical fiber utilization advantages we have to take into account undesirable effects, which are present in real non-ideal optical fibers. In telecommunication and sensor application fields the presence of inherent and induced birefringence is crucial. The presence of birefringence may cause an undesirable change in the polarization state. In order to compensate the linear birefringence a promising method has been chosen. This method employs orthogonal polarization conjugation in the back propagation direction of the light wave in the fiber. A study and a simulation of an experimental setup are realized with the advantage of a significant sensitivity improvement.

Packaging and testing of fiber Bragg gratings for use as strain sensor for rock specimens

This paper reports a packaging and calibration procedure for surface mounting of fiber Bragg grating (FBG) sensors to measure strain in rocks. The packaging of FBG sensors is performed with glass fiber and polyester resin, and then subjected to tensile loads in order to obtain strength and deformability parameters, necessaries to assess the mechanical performance of the sensor packaging. For a specific package, an optimal curing condition has been found, showing good repeatability and adaptability for non-planar surfaces, such as occurs in rock engineering. The successfully packaged sensors and electrical strain gages were attached to standard rock specimens of gabbro. Longitudinal and transversal strains under compression loads were measured with both techniques, showing that response of FBG sensors is linear and reliable. An analytical model is used to characterize the influences of rock substrate and FBG packaging in strain transmission. As a result, we obtained a sensor packaging for non-planar and complex natural material under acceptable sensitivity suitable for very small strains as occurs in hard rocks.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Electrical decoupling effect on intermediate band Ti-implanted silicon layers

We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)