Formation, microstructure and development of the localized shear deformation in low-carbon steels

An investigation has been made into the effect of microstructural parameters on the propensity for forming shear localization produced during high speed torsional testing by split Hopkinson bar with different average rates of 610, 650 and 1500 s(-1) in low carbon steels. These steels received the quenched, quenched and tempered as well as normalized treatments that provide wide microstructural parameters and mechanical properties. The results indicate that the occurrence of the shear localization is susceptible to the strength of the steels. In other words, the tendency of the quenched steel to form a shear band is higher than that of the other two steels. It is also found that there is a critical strain at which the shear localization occurs in the steels. The critical strain value is strongly dependent on the strength of the steels. Before arriving at this point, the material undergoes a slow work-hardening. After this point, the material suffers work-softening, corresponding to a process during which the deformation is gradually localized and eventually becomes spatially correlated to form a macroscopic shear band. Examinations by SEM reveal that the shear localization within the band involves a series of sequential crystallographic and non-crystallographic events including the change in crystal orientation, misorientation, generation and even perhaps damage in microstructures such as the initiation, growth and coalescence of the microcracks. It is expected that the sharp drop in the load-carrying capacity is associated with the growth and coalescence of the microcracks rather than the occurrence of the shear localization, but the shear localization is seen to accelerate the growth and coalescence of the microcracks. The thin foil observations by TEM reveal that the density of dislocations in the band is extremely high and the tangled arrangement and cell structure of dislocations tends to align along the shear direction. The multiplication and interaction of dislocations seems to be responsible for work-hardening of the steels. The avalanche of the dislocation cells corresponds to the sharp drop in shear stress at which the deformed specimen is broken. Double shear bands and kink bands are also observed in the present study. The principal band develops first and its width is narrower than that of the secondary band.

On the unstable stacking criterion for ideal and cracked copper-crystals

The unstable stacking criteria for an ideal copper crystal under homogeneous shearing and for a cracked copper crystal under pure mode II loading are analysed. For the ideal crystal under homogeneous shearing, the unstable stacking energy gamma(us) defined by Rice in 1992 results from shear with no relaxation in the direction normal to the slip plane. For the relaxed shear configuration, the critical condition for unstable stacking does not correspond to the relative displacement Delta = b(p)/2, where b(p) is the Burgers vector magnitude of the Shockley partial dislocation, but to the maximum shear stress. Based on this result, the unstable stacking energy Gamma(us) is defined for the relaxed lattice. For the cracked crystal under pure mode II loading, the dislocation configuration corresponding to Delta = b(p)/2 is a stable state and no instability occurs during the process of dislocation nucleation. The instability takes place at approximately Delta = 3b(p)/4. An unstable stacking energy Pi(us) is defined which corresponds to the unstable stacking state at which the dislocation emission takes place. A molecular dynamics method is applied to study this in an atomistic model and the results verify the analysis above.

Molecular dynamics simulation of crack-tip processes in copper

The crack tip processes in copper under mode II loading have been simulated by a molecular dynamics method. The nucleation, emission, dislocation free zone (DFZ) and pile-up of the dislocations are analyzed by using a suitable atom lattice configuration and Finnis & Sinclair potential. The simulated results show that the dislocation emitted always exhibits a dissociated fashion. The stress intensity factor for dislocation nucleation, DFZ and dissociated width of partial dislocations are strongly dependent on the loading rate. The stress distributions are in agreement with the elasticity solution before the dislocation emission, but are not in agreement after the emission. The dislocation can move at subsonic wave speed (less than the shear wave speed) or at transonic speed (greater than the shear wave speed but less than the longitudinal wave speed), but at the longitudinal wave speed the atom lattice breaks down.

Kinking of an interface crack between 2 dissimilar anisotropic elastic solids

A detailed analysis of kinking of an interface crack between two dissimilar anisotropic elastic solids is presented in this paper. The branched crack is considered as a distributed dislocation. A set of the singular integral equations for the distribution function of the dislocation density is developed. Explicit formulas of the stress intensity factors and the energy release rates for the branched crack are given for orthotropic bimaterials and misoriented orthotropic bicrystals. The role of the stress parallel to the interface, sigma0 is taken into account in these formulas. The interface crack can advance either by continued extension along the interface or by kinking out of the interface into one of the adjoining materials. This competition depends on the ratio of the energy release rates for interface cracking and for kinking out of the interface and the ratio of interface toughness to substrate toughness. Throughout the paper, the influences of the inplane stress sigma0 on the stress intensity factors and the energy release rates for the branched crack, which can significantly alter the conditions for interface cracking, are emphasized.

Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

Crack extension and kinking in laminates and bicrystals

Singular fields at the tip of an interface crack in anisotropic solids are reviewed with emphasis on establishing a framework to quantify fracture resistance under mixed mode conditions. The concepts of mode mixity and surface toughness are unified by using generalized interface traction components. The similarity between the anisotropic theory and existing isotropic theory is shown. Explicit formulae are given for misoriented orthotropic bimaterials with potential applications envisioned including composite laminates and semiconductor crystals. Competition between crack extension along the interface and kinking into the substrate is investigated using a boundary layer formulation. Several case studies reveal the role of anisotropy. An explicit complex variable representation for orthotropic materials and a solution to a dislocation interacting with a crack are presented in two self-contained Appendices.

Mixed-mode fracture mechanisms near the fatigue threshold of aisi-316 stainless-steel

Near threshold, mixed mode (I and II), fatigue crack growth occurs mainly by two mechanisms, coplanar (or shear) mode and branch (or tensile) mode. For a constant ratio of ΔK_I/ΔK_II the shear mode growth shows a self-arrest character and it would only start again when ΔK_I and ΔK_II are increased. Both shear crack growth and the early stages of tensile crack growth, are of a crystallographic nature; the fatigue crack proceeds along slip planes or grain boundaries. The appearance of the fracture surfaces suggest that the mechanism of crack extension is by developing slip band microcracks which join up to form a macrocrack. This process is thought to be assisted by the nature of the plastic deformation within the reversed plastic zone where high back stresses are set up by dislocation pile-ups against grain boundaries. The interaction of the crack tip stress field with that of the dislocation pile-ups leads to the formation of slip band microcracks and subsequent crack extension. The change from shear mode to tensile mode growth probably occurs when the maximum tensile stress and the microcrack density in the maximum tensile plane direction attain critical values.

SiC_p/6151Al复合材料的微结构效应

利用分离式Hopkinson压杆和MTS通用材料试验机研究了SiC_p/6151Al颗粒增强复合材料在不同应变率下的变形行为和增强颗粒的尺寸对复合材料微结构及变形行为的影响。结果表明，对于在不同应变率下的SiC_p/6151Al复合材料，增强颗粒尺寸大小的流动应力高于增强颗粒尺寸的流动应力。根据位错强化理论中的Hall-Petch关系对这个结果进行了解释。首次在实验上观测到增强颗粒对复合材料微损伤-微带形成的影响，并根据微带（microband）形成的双位错墙理论（double dislocation walls）, 分析了增强颗粒对复合材料微带损伤及力学性能影响的微结构效应。

高压扭转铜试样的微观组织与压缩性能

通过高压扭转对铜试样施加不同程度的变形，研究了样品扭转面（ND面）和纵截面（TD面）上微观组织特征．对ND面，在较小的剪应变下，原始晶粒形貌模糊，晶粒内部形成等轴状的位错胞及亚晶结构；随变形量的增大，亚晶间取向差及亚晶内部的位错密度增大，最后形成亚微米尺度的等轴晶粒．对TD面，变形初期原始晶粒被拉长，晶粒内部为位错墙分割成的层状结构，层内为拉长的位错胞；随变形程度的增大，拉长晶粒的宽度减小，与剪切方向的夹角减小，晶内层状组织间距减小，并逐渐演化成拉长的亚晶组织；进一步增大变形，晶粒拉长痕迹消失，变形组织与ND面相似，为等轴状亚微米晶粒．压缩实验表明，经16圈扭转后，整个试样上的压缩性能基本均匀，σ0．2达到385MPa，应变率敏感性指数增大至0．021．

Investigation of Interactions between Two Monoclonal Antibodies and SARS Virus with a Label-Free Protein Array

The investigation of interactions between two kinds of monoclonal antibodies and SARS virus with a label-free protein array technique were presented in this paper. The performance consists of three parts: a surface modification for ligand immobilization/surface, a protein array fabrication with an integrated microfluidic system for patterning, packaging and liquid handling, and a protein array reader of imaging ellipsometer. This revealed the technique could be used as an immunoassay for qualitative and quantitative detection as wen as kinetic analysis of biomolecule interaction.

Nanocrystalline Formation during Mechanical Attrition of Cobalt

The nanocrystalline (nc) formation was studied in cobalt (a mixture of c (hexagonal close packed) and gamma (face-centered cubic) phases) subjected to surface mechanical attrition treatment. Electron microscopy revealed the operation of {10(1) over bar 0}< 11(2) over bar 0 > prismatic and {0001}< 11(2) over bar 0 > basal slip in the E phase, leading to the successive subdivision of grains to nanoscale. In particular, the dislocation splitting into the stacking faults was observed to occur in ultrafine and nc grains. By contrast, the planar dislocation arrays, twins and martensites were evidenced in the gamma phase. The strain-induced gamma ->epsilon martensitic transformation was found to progress continuously in ultrafine and nc grains as the strain increased. The nc formation in the gamma phase was interpreted in terms of the martensitic transformation and twinning.

Microstructure and mechanical properties of copper subjected to high pressure torsion

Experiments were conducted on copper subjected to High Pressure Torsion to investigate the evolution of microstructure and microhardness with shear strain, gamma. Observations have been carried out in the longitudinal section for a proper demonstration of the structure morphology. An elongated dislocation cell/subgrain structure was observed at relatively low strain level. With increasing strain, the elongated subgrains transformed into elongated grains and finally into equiaxed grains with high angle grain boundaries. Measurements showed the hardness increases with increasing gamma then tends to saturations when gamma >5. The variation tendency of microhardness with gamma can be simulated by Voce-type equation.

Dislocations and twins in nanocrystalline Ni after severe plastic deformation: the effects of grain size

Deformation microstructures have been investigated in nanocrystalline (nc) Ni with grain sizes in the 50-100 nm range. It was found that deformation twinning started to occur in grains of similar to 90 nm, and its propensity increased with decreasing grain size. In most of the nc grains dislocations were observed as well, in the form of individual dislocations and dipoles. It is concluded that dislocation-mediated plasticity dominates for grain sizes in the upper half, i.e. 50-100 nm, of the nanocrystalline regime. (C) 2007 Published by Elsevier B.V.

粘弹性材料界面裂纹的瞬态响应和散射研究

本文研究粘弹性材料界面裂纹对冲击载荷的瞬态响应和对广义平面波的稳态散射。相对于已有广泛研究的弹性材料裂纹瞬态响应和稳态散射问题，本文的研究有三个突出特点：1）粘弹性材料；2）界面裂纹；3）广义平面波入射。粘弹性材料界面裂纹对冲击载荷的瞬态响应和对广义平面波的散射尚无开展研究，本文在弹性材料相应问题的研究基础上，首先开展了这一问题的研究。对于冲击载荷下粘弹性界面裂纹的瞬态响应问题，利用Laplace积分变换方法，将粘弹性材料卷积型本构方程转化为Laplace变换域内的代数型本构方程，从而可以在Laplace变换域内象处理弹性材料的冲击响应一样，将相应的混合边值问题归结为关于裂纹张开位移COD的对偶积分方程，并进一步引入裂纹位错密度函数CDD （Crack Dislocation Density），将对偶积分方程化成关于CDD的奇异积分方程（SIE）。用数值方法求解奇异积分方程得到变换域内的动应力强度因子数值解，最后利用Laplace积分逆变换数值方法得到时间域内的动应力强度因子的时间响应。理论分析考虑了两种裂纹模型，即Griffith界面裂纹和柱面圆弧型界面裂纹。考虑的载荷包括反平面冲击载荷和平面冲击载荷。对于平面冲击载荷，通过对裂尖应力场的奇性分析，首次发现粘弹性界面裂纹裂尖动应力场奇性指数不是常数0.5，而是与震荡指数一样依赖材料参数。针对反平面冲击载荷给出了一个算例，计算了裂尖动应力强度因子的时间响应，并与弹性材料的结果作了比较，发现粘弹性效应的影响不仅使过冲击峰值降低，而且使峰值点后移。粘性效应较大时，过冲击现象甚至不出现。关于粘弹性界面裂纹对广东省义平面波的散射问题，首先研究广义平面波在无裂纹存在的理想界面的反射和透射，再研究由于界面裂纹的存在而产生的附加散射场。利用粘弹性材料的复模量理论，可将粘弹性材料的卷积型相构方程化成频率域内的代数型本构方程。类似弹性平面波的处理，在频率域内将问题最终归结为关于裂纹位错密度CDD的奇异积分方程。数值方法求解奇异积分方程即可得到频率域内的散射场，并进而得到裂尖动应力强度因子和远场位移型函数和散射截面。理论分析考虑了两种裂纹模型：Griffith界面裂纹和柱面圆弧型界面裂纹。研究的入射波有广义的SH波和P波。对于广义平面P波入射的情况，通过对裂尖应力场的奇性分析，同样发现粘弹性界面裂纹裂尖动应力场奇性指数不地常数0.5，而是与震荡指数一样依赖于材料参数。对柱面裂纹散射远场的渐近分析，发现远场位移和应力除含有几何衰减因子外，都含有一个材料衰减速因子。散射截面由于材料衰减因子的存在也成为依赖散射半径的量。为了使散射截面仍有意义，文中提出一种修正办法。对Griffith界面裂纹，给出了一个广义平面SH波入射的算例；对柱面界面裂纹，给出了一个广义平面P波入射的算例。计算了不同入射角和入射频率下裂纹的张开位移和动就应力强度因子，并分析了其依赖关系。求解奇异积分方程的数值方法和Laplace积分逆变换数值方法是本文的基本数值方法。本文对这两种方法作了大量的调研和系统的研究。在对比分析的基础上，对现有的各种方法从原理，适用范围，计数效率，优势及特点进行了归纳总结。并尝试了奇异积分方程的最新数值方法--分片连续函数法，证实了其适用性和方便性．