997 resultados para Cu atoms


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The extreme sensitivity of Sm/Ba at high temperature in air becomes an obstacle to the fabrication of SmBCO single grains that exhibit stable and reliable superconducting properties. In this research, the superconducting properties of SmBCO single grains fabricated by top seeded melt growth (TSMG) from different batches of commercial SmBa2Cu3O 7-d (Sm-123) precursor powder using different processing atmospheres (air and 0.1% O2 in Ar), different processing methods (isothermal growth and continuous cooling) and different amounts of BaO2 content to suppress Sm/Ba substitution in air have been investigated in an attempt to understand fully the TSMG process for this system. As a result, based on extensive data, a novel and simple, low temperature post-annealing approach is proposed specifically to overcome the sensitivity of Tc to Sm/Ba substitution in order to simplify the fabrication of SmBCO and to increase its reliability with a view to the practical processing of these materials. Initial processing trials have been performed successfully to demonstrate the viability of the novel post-annealing process. © 2013 IOP Publishing Ltd.

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In this work specific film structures of Li-Nb-O/Li/Li-Nb-O are investigated by AC Impedance Spectroscopy measurements at different temperatures. This gives the opportunity to investigate properties of the material itself and, at the same time, to consider the influence of the grain boundaries on the ionic behavior of the polycrystalline Lithium Niobate. On the other hand, LiNbO3/Li/Cu multi-layers are studied as electrolyte/anode bi-layers and potential parts of "Li-free" microbatteries. The Li deficiency in the as deposited Li-Nb-O films is cured by forming a "sandwich" of Li-Nb-O/Li/Li-Nb-O, which after annealing becomes ionic conductor. The electrical behavior of an annealed film depends on two sources. The first is due to properties of the material itself and the second is based on the network of the grain boundaries. The average size of the grains is strongly influenced by the structure of the ohmic-contact/substrate. The electrical behavior of the electrolyte/anode interface of the "Li-free" structure LiNbO3/Li/Cu/Au is very similar to the impedance measurements of the single LiNbO3 single films. The whole multilayer structure, though, presents a third relaxation time which is consistent of a small resistance. This resistance is independent of temperature and it seems that is due to the metallic interface Li/Cu/Au. © 2010 Elsevier B.V. All rights reserved.

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Large grain, bulk Y-Ba-Cu-O (YBCO) high temperature superconductors (HTS) have significant potential for use in a variety of practical applications that incorporate powerful quasi-permanent magnets. In the present work, we investigate how the trapped field of such magnets can be improved by combining bulk YBCO with a soft FeNi, ferromagnetic alloy. This involves machining the alloy into components of various shapes, such as cylinders and rings, which are attached subsequently to the top surface of a solid, bulk HTS cylinder. The effect of these modifications on the magnetic hysteresis curve and trapped field of the bulk superconductor at 77 K are then studied using pick-up coil and Hall probe measurements. The experimental data are compared to finite element modelling of the magnetic flux distribution using Campbell's algorithm. Initially we establish the validity of the technique involving pick-up coils wrapped around the bulk superconductor to obtain its magnetic hysteresis curve in a non-destructive way and highlight the difference between the measured signal and the true magnetization of the sample. We then consider the properties of hybrid ferromagnet/superconductor (F/S) structures. Hall probe measurements, together with the results of the model, establish that flux lines curve outwards through the ferromagnet, which acts, effectively, like a magnetic short circuit. Magnetic hysteresis curves show that the effects of the superconductor and the ferromagnet simply add when the ferromagnet is saturated fully by the applied field. The trapped field of the hybrid structure is always larger than that of the superconductor alone below this saturation level, and especially when the applied field is removed. The results of the study show further that the beneficial effects on the trapped field are enhanced when the ferromagnet covers the entire surface of the superconductor for different ferromagnetic components of various shapes and fixed volume. © 2014 Elsevier B.V. All rights reserved.

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The ability of large-grain (RE)Ba2Cu3O7-δ ((RE)BCO; RE = rare earth) bulk superconductors to trap magnetic fields is determined by their critical current. With high trapped fields, however, bulk samples are subject to a relatively large Lorentz force, and their performance is limited primarily by their tensile strength. Consequently, sample reinforcement is the key to performance improvement in these technologically important materials. In this work, we report a trapped field of 17.6 T, the largest reported to date, in a stack of two silver-doped GdBCO superconducting bulk samples, each 25 mm in diameter, fabricated by top-seeded melt growth and reinforced with shrink-fit stainless steel. This sample preparation technique has the advantage of being relatively straightforward and inexpensive to implement, and offers the prospect of easy access to portable, high magnetic fields without any requirement for a sustaining current source. © 2014 IOP Publishing Ltd.

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Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

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Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

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Using a first-principles method, we investigate the structural and electronic properties of grain boundaries (GBs) in polycrystalline CdTe and the effects of copassivation of elements with far distinct electronegativities. Of the two types of GBs studied in this Letter, we find that the Cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as Cl and Cu, whereas the Te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of Cl and Cu. Our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the GBs.

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The thermodynamic properties of the spin-1/2 diamond quantum Heisenberg chain model have been investigated by means of the transfer matrix renormalization group (TMRG) method. Considering different crystal structures, by changing the interactions among different spins and the external magnetic fields, we first investigate the magnetic susceptibility, magnetization, and specific heat of the distorted diamond chain as a model of ferrimagnetic spin systems. The susceptibility and the specific heat show different features for different ferromagnetic (F) and antiferromagnetic (AF) interactions and different magnetic fields. A 1/3 magnetization plateau is observed at low temperature in a magnetization curve. Then, we discuss the theoretical mechanism of the double-peak structure of the magnetic susceptibility and the three-peak structure of the specific heat of the compound Cu-3(CO3)(2)(OH)(2), on which an elegant measurement was performed by Kikuchi [Phys. Rev. Lett. 94, 227201 (2005)]. Our computed results are consistent with the main characteristics of the experimental data. Meanwhile, we find that the double-peak structure of susceptibility can be found in several different kinds of spin interactions in the diamond chain. Moreover, a three-peak behavior is observed in the TMRG results of magnetic susceptibility. In addition, we perform calculations relevant for some experiments and explain the characteristics of these materials. (c) 2007 American Institute of Physics.

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Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(1 1 (2) over bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 mu(B)/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly. (C) 2009 Elsevier B. V. All rights reserved.

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Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpolar a-plane (1120) GaN films with a subsequent thermal annealing process. The impact of the implantation dose on the structural. morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD). atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the structural and morphological characteristics of samples deteriorated with the increase of implantation dose. According to the SQUID analysis. obvious room-temperature ferromagnetic properties of samples were detected. Moreover, the saturation magnetization per Cu atom decreased as the implantation dose increased. (C) 2009 Elsevier B.V. All rights reserved.

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We propose a scheme to generate maximally entangled states (MESs) of multiple three-level atoms in microwave cavity QED based on the resonant atom-cavity interaction. In the scheme, multiple three-level atoms initially in their ground states are sequently sent through two suitably prepared cavities. After a process of appropriate atom-cavity interaction, a subsequent measurement on the second cavity field projects the atoms onto the MESs. The practical feasibility of this method is also discussed.

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We propose a scheme to generate a supersinglet of three three-level atoms in microwave cavity quantum electrodynamics based on the resonant atom-cavity interaction. In the scheme, three three-level atoms in suitable initial states are sequentially sent through three cavities originally prepared in their vacuum states. After an appropriate atom-cavity interaction process, in the subsequent measurement on the third cavity field the atoms are projected onto the desired supersinglet. The practical feasibility of this method is discussed.

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This work was supported by the Natural Science Foundation of China (Grant No. 60876068) and The Project sponsored by SRF for ROCS (Grant No. 08Y1010000), SEM

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The room-temperature photoluminescence (PL) of copper doped zinc sulfide (ZnS:Cu) nanoparticles were investigated. These ZnS:Cu nanoparticles were synthesized by a facile wet chemical method, with the copper concentration varying from 0 to 2 mol%. By Gaussian fitting, the PL spectrum of the undoped ZnS nanoparticles was deconvoluted into two blue luminescence peaks (centered at 411 nm and 455 nm, respectively), which both can be attributed to the recombination of the defect sates of ZnS. But for the doped samples, a third peak at about 500 nm was also identified. This green luminescence originates from the recombination between the shallow donor level (sulfur vacancy) and the t(2) level of Cu2+. With the increase of the CU2+ concentration, the green emission peak is systematically shifted to longer wavelength. In addition, it was found that the overall photoluminescence intensity is decreased at the Cu2+ concentration of 2%. The concentration quenching of the luminescence may be caused by the formation of CuS compound. (c) 2005 Elsevier B.V. All rights reserved.