Aplicações do formalismo de Keldysh ao transporte e ao bombeamento de calor em nanoestruturas

Num regime balísstico e a baixas temperaturas, a fórmula de Landauer dá uma boa descrição do transporte de calor para nano-junções conectadas a dois fios acoplados a banhos térmicos a temperaturas diferentes. Partindo de um modelo microscópico e utilizando o método de funções de Green fora do equilíbrio, é possível obter uma expressão para a condutância térmica na nano-junção equivalente a fórmula de Landauer. Esta depende dos valores das constantes de acoplamento entre os modos de fônons da região central e dos fios, além do gradiente térmico. A expressão para a condutância térmica é muito semelhante aquela obtida para a condutância elétrica. Neste trabalho nós apresentamos o método para o cálculo de grandezas relacionadas ao transporte térmico em um regime onde não há um gradiente de temperatura entre os reservatórios mas o sistema sofre uma perturbação dependente do tempo. Ou seja, com uma escolha conveniente da parametrização temporal dos termos de acoplamento entre a nano-junção e os fios é possível produzir uma corrente de calor na ausência de diferença de temperaturas entre os banhos térmicos aos quais os fios estão conectados. Esse fenômeno caracteriza o bombeamento de calor. Desenvolvemos uma teoria de transporte dependente do tempo para descrever o bombeamento. A teoria é geral, dependendo da densidade de fônons, da intensidade e dependência temporal do acoplamento. Aplicamos o formalismo em um modelo simples demonstrando que, em princípio, é possível bombear calor através de uma cadeia linear de átomos sem gradiente térmico.

Single sensor boost converter-based maximum power point tracking algorithms

Two new maximum power point tracking algorithms are presented: the input voltage sensor, and duty ratio maximum power point tracking algorithm (ViSD algorithm); and the output voltage sensor, and duty ratio maximum power point tracking algorithm (VoSD algorithm). The ViSD and VoSD algorithms have the features, characteristics and advantages of the incremental conductance algorithm (INC); but, unlike the incremental conductance algorithm which requires two sensors (the voltage sensor and current sensor), the two algorithms are more desirable because they require only one sensor: the voltage sensor. Moreover, the VoSD technique is less complex; hence, it requires less computational processing. Both the ViSD and the VoSD techniques operate by maximising power at the converter output, instead of the input. The ViSD algorithm uses a voltage sensor placed at the input of a boost converter, while the VoSD algorithm uses a voltage sensor placed at the output of a boost converter. © 2011 IEEE.

银杏类植物的叶表皮特征及其气孔频度对大气CO2浓度的指示

本文以跨越漫长地质历史时期的银杏类植物为研究对象，首次尝试在大的时间尺度上利用单一植物类群的气孔频度估测古大气CO2浓度的变化趋势。 一、借助多种研究手段对现代银杏（Ginkgo biloba）和9种化石银杏的叶表皮特征进行调查，并对现代银杏叶片蜡质晶体的形态结构和气孔发育过程进行了研究。应用荧光显微镜观察晚三叠世一种拜拉植物的角质层特征，根据其气孔下生型和平直的表皮细胞垂周壁等特点建 立新种—宁蒗拜拉（Baiera ninglangensis sp. nov.）。 二、在大气CO2浓度相对稳定的条件下，对不同条件下（不同季节，长短枝间，不同冠层间，不同叶片面积，雌雄树间）银杏叶片气孔密度和气孔指数的调查结果表明，其它环境因子对银杏气孔频度的影响很有限，而且通过一定的采样、测量和分析策略，可以排除其他环境和生物因子对气孔特征的影响。 三、74年间，大气CO2浓度上升55μmol•mol-1的同时，银杏的气孔密度降低了27%。而3属8种中生代和新生代银杏类植物在9个时间点的气孔密度和气孔指数都低于现存最近对应种的值，意味着当时的大气CO2浓度都高于目前的水平。根据最新评估标准，以气孔比率定量估算各个地质时代的大气CO2浓度，与前人的工作以及通过地球物理化学方法获得的显生宙大气CO2浓度进行比较。

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Unified circuit model for the polysilicon TFT

This paper proposes two methods to improve the modelling of thin film transistors (TFTs). The first involves integrating Poissons equation numerically, given a density of trap states and other relevant material parameters including a constant mobility. Theresult is conductance as a numerical function of gate voltage. The second method recognizes that the data for areal conductance found by numerical integration, may easily be found by measurement without making assumptions about the density of trap states.

A unified circuit model for the polysilicon thin film transistor

This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model. © 1991 The Japan Society of Applied Physics.

Measurement of forces during the modification of C60 islands

A UHV atomic force microscope with a conducting tip is used to measure the tip-sample conductance as a function of the applied force on well-ordered, monolayer islands of C60 on Cu(111). By imaging the sample before and after each force-distance experiment, it was possible to investigate the forces required for the removal of individual C60 molecules from the islands. The removal of C60 occurs near defects or edges of the C60 islands and requires an applied force of 5-20 nN, which corresponds to applied pressures of order 1 GPa. In addition, it was possible to investigate the strength of the C60 film on the molecular scale. It was found that the mechanical stiffness of a C60 molecule is of order 6 N/m and the islands appear to undergo a reversible yield process at an applied pressure of around 1.2 GPa.

Novel dual transient temperature modulation technique for multi-vapour detection

Here we present a novel signal processing technique for a square wave thermally-modulated carbon black/polymer composite chemoresistor. The technique consists of only two mathematical operations: summing the off-transient and on-transient conductance signals; and subtracting the steady-state conductance signal. A single carbon black/polyvinylpyrrolidone composite chemo -resistor was fabricated and used to demonstrate the validity of the technique. Classification of water, methanol and ethanol vapours was successfully performed using only the peak time of the resultant curves. Quantification of the different vapours was also possible using the height of the peaks, because it was linearly proportional to concentration. This technique does not require zero-gas calibration and thus is superior to previously reported methods. ©2009 IEEE.

Electric conduction improvement of well-structured multi-walled carbon nanotubes

We characterized the electrical conductance of well-structured multi-walled carbon nanotubes (MWCNTs) which had post-treated by a rapid vacuum arc thermal annealing process and structure defects in these nanotubes are removed. We found that the after rapid vacuum arc annealing, the conductivity of well-structured MWCNTs can be improved by an order of magnitude. We also investigated the conductivity of MWCNTs bundle by the variation of temperatures. These results show that the conductance of annealed defect-free MWCNTs is sensitive to temperature imply the phonon scatting dominated the electron conductions. Compare to the well-structured MWCNTs, the defect scattering dominated the electron conduction in the as-grown control sample which has large amount of structure defects. A detail measurement of electron conduction from an individual well-structured MWCNT shows that the conductivity increases with temperatures which imply such MWCNTs exhibited semiconductor properties. We also produced back-gated field-effect transistors using these MWCNTs. It shows that the well-structured MWCNT can act as p-type semiconductor. © 2010 IEEE.

Performance prediction of graphene nanoribbon and carbon nanotube transistors

Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field-effect transistor (FET) can be the basis for a quasi-one- dimensional (Q1D) transistor technology. Recent experiments show that the on-off ratio for GNR devices can be improved to level exploration of transistor action is justified. Here we use the tight-binding energy dipersion approximation, to assess the performance of semiconducting CNT and GNR is qualitatively in terms of drain current drive strength, bandgap and density of states for a specified device. By reducing the maximum conductance 4e2/h by half, we observed that our model has a particularly good fit with 50 nm channel single walled carbon nanotube (SWCNT) experimental data. Given the same bandgap, CNTs outperform GNRs due to valley degeneracy. Nevertheless, the variation of the device contacts will decide which transistor will exhibit better conductivity and thus higher ON currents. © 2011 American Institute of Physics.

ANALYTICAL DEVICE FOR TEST FLUIDS, COMPRISES A CONDUCTIVE POLYMER COMPOSITION

A sensor for chemical species or biological species or radiation presenting to test fluid a polymer composition comprises polymer and conductive filler metal, alloy or reduced metal oxide and having a first level of electrical conductance when quiescent and being convertible to a second level of conductance by change of stress applied by stretching or compression or electric field, in which the polymer composition is characterised by at least one of the features in the form of particles at least 90% w/w held on a 100 mesh sieve; and/or comprising a permeable body extending across a channel of fluid flow; and/or affording in-and-out diffusion of test fluid and/or mechanically coupled to a workpiece of polymer swellable by a constituent of test fluid.

Voltage sensing buck converter-based technique for maximum photovoltaic solar energy delivery

A voltage sensing buck converter-based technique for maximum solar power delivery to a load is presented. While retaining the features and advantages of the incremental conductance algorithm, this technique is more desirable because of single sensor use. The technique operates by maximising power at the buck converter output instead of the input.

Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.