Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO6 octahedron unit due to the reduction of lattice parameters. Remnant polarization (P r ) values are about 30 μC/cm2 and 12 μC/cm2 for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films. © 2013 Elsevier Ltd and Techna Group S.r.l.

Fabricação e caracterização morfológica de filmes layer-by-layer de DODAB/FTALOCIANINA de níquel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da arquitetura molecular de filmes layer-by-layer de ftalocianina tetrasulfonada de cobre

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo in vitro das alterações na superfície do titânio comercialmente puro e da liga de titânio Ti -6Al-4V submetida a diferentes tratamentos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo de polímeros comerciais tratados a plasma em pressão atmosférica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Caracterização topográfica e estrutural de filmes poliméricos provenientes de acetileno (C2H2) depositados a plasma sobre substratos lisos e rugosos

Pós-graduação em Física - FEG

Tratamento de polímeros com jato de plasma em pressão atmosférica

Pós-graduação em Física - FEG

Fabricação e caracterização de filmes Langmuir e Langmuir-Blodgett de derivados do politiofeno

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Síntese e caracterização de nanoestruturas e filmes finos de 'BI' 'FE' 'OIND.3' modificado com samário visando aplicação em memórias de múltiplos estados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento de revestimentos híbridos do sistema siloxano-PMMA com aplicações anticorrosivas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modelo cinético estocástico para a transcrição considerando colisões entre as moléculas de RNA polimerase

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filmes finos obtidos a plasma em reagentes contendo ácido cítrico/etilenoglicol

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Crescimento da nanoapatita na liga Ti-30Ta, para aplicações odontológicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização de filmes finos Sr1-xMexTiO3(Me=Fe, Ni)

Pós-graduação em Ciência e Tecnologia de Materiais - FC