Cobalt(III) complexes with thiosemicarbazones as potential anti-Mycobacterium tuberculosis agents

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and antimycobacterial activity of new pyrazolate-bridged dinuclear complexes of the type [Pd(mu-L)(N-3)(PPh3)](2) (PPh3 = triphenylphosphine; L = pyrazolates)

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Hydroxyquinoline derived vanadium(IV and V) and copper(II) complexes as potential anti-tuberculosis and anti-tumor agents

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and biological evaluation of ternary silver compounds bearing N,N-chelating ligands and thiourea: X-ray structure of [{Ag(bpy) (mu-tu)}(2)](NO3)(2) (bpy=2,2 '-bipyridine; tu = thiourea)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

N-Methyl-2-(1-methyl-3-phenyl­prop-2-en-1-yl­idene)hydrazinecarbo­thio­amide

In the title compound, C12H15N3S, the mol­ecule deviates slightly from planarity, with a maximum deviation from the mean plane of the non-H atoms of 0.2756 (6) Å for the S atom and a torsion angle for the N-N-C-N fragment of -7.04 (16)°. In the crystal, mol­ecules are linked by N-H...S hydrogen-bond inter­actions, forming centrosymmetric dimers. Additionally, one weak intra­molecular N-H...N hydrogen-bond inter­action is observed. The crystal packing shows a herringbone arrangement viewed along the c axis.

Formation and evolution of TiO2 nanotubes in alkaline synthesis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis, structural characterization, luminescent properties and theoretical study of three novel lanthanide metal-organic frameworks of Ho(III), Gd(III) and Eu(III) with 2,5-thiophenedicarboxylate anion

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

In silico infrared and Raman spectroscopy under pressure: The case of CaSnO3 perovskite

The CaSnO3 perovskite is investigated under geochemical pressure, up to 25 GPa, by means of periodic ab initio calculations performed at B3LYP level with local Gaussian-type orbital basis sets. Structural, elastic, and spectroscopic (phonon wave-numbers, infrared and Raman intensities) properties are fully characterized and discussed. The evolution of the Raman spectrum of CaSnO3 under pressure is reported to remarkably agree with a recent experimental determination [J. Kung, Y. J. Lin, and C. M. Lin, J. Chem. Phys. 135, 224507 (2011)] as regards both wave-number shifts and intensity changes. All phonon modes are symmetry-labeled and bands assigned. The single-crystal total spectrum is symmetry-decomposed into the six directional spectra related to the components of the polarizability tensor. The infrared spectrum at increasing pressure is reported for the first time and its main features discussed. All calculations are performed using the CRYSTAL14 program, taking advantage of the new implementation of analytical infrared and Raman intensities for crystalline materials. (C) 2015 AIP Publishing LLC.

Non-centrosymmetric crystals of new N-benzylideneaniline derivatives as potential materials for non-linear optics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Metalosupramoléculas discretas e Metal Organic Frameworks (MOFs) baseados em íons lantanídeos: design, síntese, caracterização e propriedades

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Compostos de Pd(II) contendo ligantes N,S-doadores: síntese, caracterização e estudo da atividade citotóxica

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Espectroscopia de impedância em Fe3O2BO3 e α-MnO2 dopado com cobre

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise estrutural de halogenases encontradas em clusters gênicos da biossíntese de antibióticos glicopeptídicos

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Robust isothermal electric control of exchange bias at room temperature

Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr2O3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr2O3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Néel temperature.