Energy Principle And Nonlinear Electric-Mechanical Behavior Of Ferroelectric Ceramics

Many experimental observations have shown that a single domain in a ferroelectric material switches by progressive movement of domain walls, driven by a combination of electric field and stress. The mechanism of the domain switch involves the following steps: initially, the domain has a uniform spontaneous polarization; new domains with the reverse polarization direction nucleate, mainly at the surface, and grow though the crystal thickness; the new domain expands sideways as a new domain continues to form; finally, the domain switch coalesces to complete the polarization reversal. According to this mechanism, the volume fraction of the domain switching is introduced in the constitutive law of the ferroelectric material and used to study the nonlinear constitutive behavior of a ferroelectric body in this paper. The principle of stationary total potential energy is put forward in which the basic unknown quantities are the displacement u(i), electric displacement D-i and volume fraction rho(I) of the domain switching for the variant I. The mechanical field equation and a new domain switching criterion are obtained from the principle of stationary total potential energy. The domain switching criterion proposed in this paper is an expansion and development of the energy criterion established by Hwang et al. [ 1]. Based on the domain switching criterion, a set of linear algebraic equations for determining the volume fraction rho(I) of domain switching is obtained, in which the coefficients of the linear algebraic equations only contain the unknown strain and electric fields. If the volume fraction rho(I) of domain switching for each domain is prescribed, the unknown displacement and electric potential can be obtained based on the conventional finite element procedure. It is assumed that a domain switches if the reduction in potential energy exceeds a critical energy barrier. According to the experimental results, the energy barrier will strengthen when the volume fraction of the domain switching increases. The external mechanical and electric loads are increased step by step. The volume fraction rho(I) of domain switching for each element obtained from the last loading step is used as input to the constitutive equations. Then the strain and electric fields are calculated based on the conventional finite element procedure. The finite element analysis is carried out on the specimens subjected to uniaxial coupling stress and electric field. Numerical results and available experimental data are compared and discussed. The present theoretic prediction agrees reasonably with the experimental results.

A field model interpretation of crack initiation and growth behavior in ferroelectric ceramics: change of poling direction and boundary condition

Strain energy density expressions are obtained from a field model that can qualitatively exhibit how the electrical and mechanical disturbances would affect the crack growth behavior in ferroelectric ceramics. Simplification is achieved by considering only three material constants to account for elastic, piezoelectric and dielectric effects. Cross interaction of electric field (or displacement) with mechanical stress (or strain) is identified with the piezoelectric effect; it occurs only when the pole is aligned normal to the crack. Switching of the pole axis by 90degrees and 180degrees is examined for possible connection with domain switching. Opposing crack growth behavior can be obtained when the specification of mechanical stress sigma(infinity) and electric field E-infinity or (sigma(infinity), E-infinity) is replaced by strain e and electric displacement D-infinity or (epsilon(infinity), D-infinity). Mixed conditions (sigma(infinity),D-infinity) and (epsilon(infinity),E-infinity) are also considered. In general, crack growth is found to be larger when compared to that without the application of electric disturbances. This includes both the electric field and displacement. For the eight possible boundary conditions, crack growth retardation is identified only with (E-y(infinity),sigma(y)(infinity)) for negative E-y(infinity) and (D-y(infinity), epsilon(y)(infinity)) for positive D-y(infinity) while the mechanical conditions sigma(y)(infinity) or epsilon(y)infinity are not changed. Suitable combinations of the elastic, piezoelectric and dielectric material constants could also be made to suppress crack growth. (C) 2002 Published by Elsevier Science Ltd.

Snap-through and pull-in instabilities of an arch-shaped beam under an electrostatic loading

The snap-through and pull-in instabilities of the micromachined arch-shaped beams under an electrostatic loading are studied both theoretically and experimentally. The pull-in instability that results in a system collision with an electrode substrate may lead to a system failure and, thus, limits the system maximum displacement. The beam/plate structure with a flat initial configuration under an electrostatic loading can only experience the pull-in instability. With the different arch configurations, the structure may experience either only the pull-in instability or the snap-through and pull-in instabilities together. As shown in our computation and experiment, those arch-shaped beams with the snap-through instability have the larger maximum displacement compared with the arch-shaped beams with only the pull-in stability and those with the flat initial configuration. The snap-through occurs by exerting a fixed load, and the structure experiences a discontinuous displacement jump without consuming power. Furthermore, after the snap-through jump, the structures are demonstrated to have the capacity to withstand further electrostatic loading without pull-in. Those properties of consuming no power and increasing the structure deflection range without pull-in is very useful in microelectromechanical systems design, which can offer better sensitivity and tuning range.

Stability and bifurcation behaviour of electrostatic torsional NEMS varactor influenced by dispersion forces

The influences of Casimir and van der Waals forces on the nano-electromechanical systems (NEMS) electrostatic torsional varactor are studied. A one degree of freedom, the torsional angle, is adopted, and the bifurcation behaviour of the NEMS torsional varactor is investigated. There are two bifurcation points, one of which is a Hopf bifurcation point and the other is an unstable saddle point. The phase portraits are also drawn, in which periodic orbits are around the Hopf bifurcation point, but the periodic orbit will break into a homoclinic orbit when meeting the unstable saddle point.

压电材料椭圆切口的力学分析

在线性压电本构方程框架下，用复势函数方法对椭圆切口模型进行了精确的数值计算。完整地考虑了各向异性力电耦合效应以及切口内不同电介质的介电性质。给出了切口内部不同介电性质对压电材料内部应力的影响。指出了Sosa文章里的一些计算错误。由于现在文献中很小有关于电导通边界条件政府解的数值结果，所以本文同时提供了不同电边界条件下的理论解的数值结果。最后通过最小势能原理建立了8结点有限元模型，对椭圆切口问题进行了计算并与理论解进行了仔细比较。

Piezoelectricity of ZnO films prepared by sol-gel method

ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.

FTT-MA: A Flexible Time-Triggered Middleware Architecture for Time Sensitive, Resource-Aware AmI Systems

There is an increasing number of Ambient Intelligence (AmI) systems that are time-sensitive and resource-aware. From healthcare to building and even home/office automation, it is now common to find systems combining interactive and sensing multimedia traffic with relatively simple sensors and actuators (door locks, presence detectors, RFIDs, HVAC, information panels, etc.). Many of these are today known as Cyber-Physical Systems (CPS). Quite frequently, these systems must be capable of (1) prioritizing different traffic flows (process data, alarms, non-critical data, etc.), (2) synchronizing actions in several distributed devices and, to certain degree, (3) easing resource management (e.g., detecting faulty nodes, managing battery levels, handling overloads, etc.). This work presents FTT-MA, a high-level middleware architecture aimed at easing the design, deployment and operation of such AmI systems. FTT-MA ensures that both functional and non-functional aspects of the applications are met even during reconfiguration stages. The paper also proposes a methodology, together with a design tool, to create this kind of systems. Finally, a sample case study is presented that illustrates the use of the middleware and the methodology proposed in the paper.

Enabling Sensor* Interoperability, Portland, Maine, October 16-18 2006: workshop proceedings

The ACT workshop "Enabling Sensor Interoperability" addressed the need for protocols at the hardware, firmware, and higher levels in order to attain instrument interoperability within and between ocean observing systems. For the purpose of the workshop, participants spoke in tern of "instruments" rather than "sensors," defining an instrument as a device that contains one or more sensors or actuators and can convert signals from analog to digital. An increase in the abundance, variety, and complexity of instruments and observing systems suggests that effective standards would greatly improve "plug-and-work" capabilities. However, there are few standards or standards bodies that currently address instrument interoperability and configuration. Instrument interoperability issues span the length and breadth of these systems, from the measurement to the end user, including middleware services. There are three major components of instrument interoperability including physical, communication, and application/control layers. Participants identified the essential issues, current obstacles, and enabling technologies and standards, then came up with a series of short and long term solutions. The top three recommended actions, deemed achievable within 6 months of the release of this report are: A list of recommendations for enabling instrument interoperability should be put together and distributed to instrument developers. A recommendation for funding sources to achieve instrument interoperability should be drafted. Funding should be provided (for example through NOPP or an IOOS request for proposals) to develop and demonstrate instrument interoperability technologies involving instrument manufacturers, observing system operators, and cyberinfrastructure groups. Program managers should be identified and made to understand that milestones for achieving instrument interoperability include a) selection of a methodology for uniquely identifying an instrument, b) development of a common protocol for automatic instrument discovery, c) agreement on uniform methods for measurements, d) enablement of end user controlled power cycling, and e) implementation of a registry component for IDS and attributes. The top three recommended actions, deemed achievable within S years of the release of this report are: An ocean observing interoperability standards body should be established that addresses standards for a) metadata, b) commands, c) protocols, d) processes, e) exclusivity, and f) naming authorities.[PDF contains 48 pages]

线性压电材料的有限元分析

本文利用线性压电学理论，编制了线性压电材料四结点等参有限元程序，进行了校核，并对PZT-5A材料压电智能元件和压电材料标准断裂试进行了计算，计算包括：①采用实际工程应用的压电智能元件尺寸，计算了元件的压电响应；并针对元件内部电极尖端区域容易引起破坏的现象，计算了该区域的奇异应力、应变场及电场。②计算了加力和加电两种情况下压电材料标准断裂试件应力强度因子影响系数F_I和电位移强度因子影响系数F_D。裂纹面边界条件采用D-P条件，试件包括紧凑拉伸标准试件和三点弯曲标准试件。③应用Lagrange乘子法将Parton裂纹边界条件加于有限元程序中，计算了上述两种标准断裂试件的F_I和F_D，计算结果与采用D-P裂纹边界条件的计算结果有很大差异。

带压电陶瓷片梁的力学分析和二类变量广义变分原理

对于采用贴有压电陶瓷片作为作动元件的智能结构，在进行自适应控制时，往往要分析压电陶瓷片所引起的结构中的应力、应变和位移。对于带有压电陶瓷片梁的力学分析，文献中大多采用Euler-Bernoulli模型，即不考虑梁中的剪力，且假定梁沿厚度方向满足直法线假定。考虑到压电陶瓷片对梁的作用主要是通过粘贴层以剪力的形式传递到梁上，梁截面上的剪应力和剪应变一般很大，其影响不能忽略。本文采用Hellinger-Reissner二类变分广义余能原理，导出考虑梁截面上剪应力和剪应变影响的方程式，其中采用吉尔法求解非齐次常微分方程组。并将求得的解与相同条件的有限元解进行比较。结果证明该方法很有效。本文还对二类广义变分法进行了一般的讨论，发现，在使用二类广义变分法求解时，随着应力和位移所取项数的增加，结果有时反而变坏。并对二类广义变分法的使用提出了一些建议。