Passively harmonic mode locked erbium doped fiber soliton laser with carbon nanotubes based saturable absorber

We have proposed and demonstrated passive harmonic mode locking of an erbium doped fiber laser with soliton pulse shaping using carbon nanotubes polyvinyl alcohol film. Two types of samples prepared by using filtration and centrifugation were studied. The demonstrated fiber laser can support 10th harmonic order corresponding to 245 MHz repetition rate with an output power of ~12 mW. More importantly, all stable harmonic orders show timing jitter below 10 ps. The output pulses energies are between 25 to 56 pJ. Both samples result in the same central wavelength of output optical spectrum with similar pulse duration of ~1 ps for all harmonic orders. By using the same laser configuration, centrifugated sample exhibits slightly lower pulse chirp. © 2012 Optical Society of America.

Controlling the properties of microstructured plastic optical fiber Bragg gratings using acousto-optic excitation

A fine control of the mPOF Bragg grating spectrum properties, such as maximum reflected power and 3dB bandwidth, through acousto-optic modulation (AOM) using flexural regime is presented. A numerical comparison of the strain field along mPOFBG - AOM and the similar structure with SMFBG-AOM was presented, showing that the strain field amplitude is higher along the mPOFBG due to its smaller mechanical stiffness. The obtained results can be used in the development of fine-tuned optical filters using low voltage sources and low frequency regimes, to obtain tunable optical filters and to control the shape of the spectrum. Studies of the behavior in different gratings (such as phase shifted and long period gratings) for photonic applications, such as tunable notch filters or tunable cavities, are in progress. It can potentially be applied on tunable optical filters for POF transmission. © 2012 IEEE.

Higher-order soliton generation in hybrid mode-locked thulium-doped fiber ring laser

A thulium-doped all-fiber laser passively mode-locked by the co-action of nonlinear polarization evolution and single-walled carbon nanotubes operating at 1860-1980 nm wavelength band is demonstrated. Pumped with the single-mode laser diode at 1.55 μm laser generates near 500-fs soliton pulses at repetition rate ranging from 6.3 to 72.5 MHz in single-pulse operation regime. Having 3-m long cavity average output power reached 300 mW, giving the peak power of 4.88 kW and the pulse energy of 2.93 nJ with slope efficiency higher than 30%. At a 21.6-m long ring cavity average output power of 117 mW is obtained, corresponding to the pulse energy up to 10.87 nJ and a pulse peak power of 21.7 kW, leading to the higher-order soliton generation.

Random distributed feedback Raman fiber laser operating in a 1.2 μm wavelength range

The random distributed feedback fiber laser operating via the stimulated Raman scattering and random distributed feedback based on the Rayleigh scattering is demonstrated in the 1.2 μm frequency band. The RDFB fiber laser generates at 1174 nm up to 2.4 W of output power with corresponding slope efficiency more than 30%. The output radiation has the spectral shape similar to the conventional Raman fiber lasers and spectral width less than 1.7 nm. © 2011 Pleiades Publishing, Ltd.

Energy scaling of Kerr-lens mode-locked thin-disk oscillators

Geometric scaling of a Kerr-lens mode-locked Yb:YAG thin-disk oscillator yields femtosecond pulses with an average output power of 270 W. The scaled system delivers femtosecond (210-330 fs) pulses with a peak power of 38 MW. These values of average and peak power surpass the performance of any previously reported femtosecond laser oscillator operated in atmospheric air.

Q-switched Raman fiber laser with molybdenum disulfide-based passive saturable absorber

We demonstrate a Q-switched Raman fiber laser using molybdenum disulfide (MoS2) as a saturable absorber (SA). The SA is assembled by depositing a mechanically exfoliated MoS2 onto a fiber ferrule facet before it is matched with another clean ferrule via a connector. It is inserted in a Raman fiber laser cavity with a total cavity length of about 8km to generate a Q-switching pulse train operating at 1560.2 nm. A 7.7-km-long dispersion compensating fiber with 584 ps·nm?1km?1 of dispersion is used as a nonlinear gain medium. As the pump power is increased from 395mW to 422mW, the repetition rate of the Q-switching pulses can be increased from 132.7 to 137.4 kHz while the pulse width is concurrently decreased from 3.35μs to 3.03 μs. The maximum pulse energy of 54.3 nJ is obtained at the maximum pump power of 422mW. These results show that the mechanically exfoliated MoS2 SA has a great potential to be used for pulse generation in Raman fiber laser systems.

Direct sequence spread spectrum based PWM strategy for harmonic reduction and communication

Switched mode power supplies (SMPSs) are essential components in many applications, and electromagnetic interference is an important consideration in the SMPS design. Spread spectrum based PWM strategies have been used in SMPS designs to reduce the switching harmonics. This paper proposes a novel method to integrate a communication function into spread spectrum based PWM strategy without extra hardware costs. Direct sequence spread spectrum (DSSS) and phase shift keying (PSK) data modulation are employed to the PWM of the SMPS, so that it has reduced switching harmonics and the input and output power line voltage ripples contain data. A data demodulation algorithm has been developed for receivers, and code division multiple access (CDMA) concept is employed as communication method for a system with multiple SMPSs. The proposed method has been implemented in both Buck and Boost converters. The experimental results validated the proposed DSSS based PWM strategy for both harmonic reduction and communication.

Dark soliton generation from semiconductor optical amplifier gain medium in ring fiber configuration

We have investigated the mode-lock operation from a semiconductor optical amplifier (SOA) gain chip in the ring fibre configuration. At lower pump currents, the laser generates dark soliton pulses both at the fundamental repetition rate of 39 MHz and supports up to the 6th harmonic order corresponding to 234-MHz repetition rate with an output power of ∼2.1 mW. At higher pump currents, the laser can be switched between the bright, dark and concurrent bright and dark soliton generation regimes.

Experimental analysis of novel telecom source materials and devices

Incumbent telecommunication lasers emitting at 1.5 µm are fabricated on InP substrates and consist of multiple strained quantum well layers of the ternary alloy InGaAs, with barriers of InGaAsP or InGaAlAs. These lasers have been seen to exhibit very strong temperature dependence of the threshold current. This strong temperature dependence leads to a situation where external cooling equipment is required to stabilise the optical output power of these lasers. This results in a significant increase in the energy bill associated with telecommunications, as well as a large increase in equipment budgets. If the exponential growth trend of end user bandwidth demand associated with the internet continues, these inefficient lasers could see the telecommunications industry become the dominant consumer of world energy. For this reason there is strong interest in developing new, much more efficient telecommunication lasers. One avenue being investigated is the development of quantum dot lasers on InP. The confinement experienced in these low dimensional structures leads to a strong perturbation of the density of states at the band edge, and has been predicted to result in reduced temperature dependence of the threshold current in these devices. The growth of these structures is difficult due to the large lattice mismatch between InP and InAs; however, recently quantum dots elongated in one dimension, known as quantum dashes, have been demonstrated. Chapter 4 of this thesis provides an experimental analysis of one of these quantum dash lasers emitting at 1.5 µm along with a numerical investigation of threshold dynamics present in this device. Another avenue being explored to increase the efficiency of telecommunications lasers is bandstructure engineering of GaAs-based materials to emit at 1.5 µm. The cause of the strong temperature sensitivity in InP-based quantum well structures has been shown to be CHSH Auger recombination. Calculations have shown and experiments have verified that the addition of bismuth to GaAs strongly reduces the bandgap and increases the spin orbit splitting energy of the alloy GaAs1−xBix. This leads to a bandstructure condition at x = 10 % where not only is 1.5 µm emission achieved on GaAs-based material, but also the bandstructure of the material can naturally suppress the costly CHSH Auger recombination which plagues InP-based quantum-well-based material. It has been predicted that telecommunications lasers based on this material system should operate in the absence of external cooling equipment and offer electrical and optical benefits over the incumbent lasers. Chapters 5, 6, and 7 provide a first analysis of several aspects of this material system relevant to the development of high bismuth content telecommunication lasers.

Full-Duplex Spectrum Sharing in Cooperative Single Carrier Systems

We propose cyclic prefix single carrier full-duplex transmission in amplify-and-forward cooperative spectrum sharing networks to achieve multipath diversity and full-duplex spectral efficiency. Integrating full-duplex transmission into cooperative spectrum sharing systems results in two intrinsic problems: 1) the residual loop interference occurs between the transmit and the receive antennas at the secondary relays and 2) the primary users simultaneously suffer interference from the secondary source (SS) and the secondary relays (SRs). Thus, examining the effects of residual loop interference under peak interference power constraint at the primary users and maximum transmit power constraints at the SS and the SRs is a particularly challenging problem in frequency selective fading channels. To do so, we derive and quantitatively compare the lower bounds on the outage probability and the corresponding asymptotic outage probability for max–min relay selection, partial relay selection, and maximum interference relay selection policies in frequency selective fading channels. To facilitate comparison, we provide the corresponding analysis for half-duplex. Our results show two complementary regions, named as the signal-to-noise ratio (SNR) dominant region and the residual loop interference dominant region, where the multipath diversity and spatial diversity can be achievable only in the SNR dominant region, however the diversity gain collapses to zero in the residual loop interference dominant region.

Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes

We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (11 2 - 2) GaN substrate (Bulk-GaN) and a low-cost large-size (11 2 - 2) GaN template created on patterned (10 1 - 2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼ and basal-plane stacking fault (BSF) density of 0 cm-1, while the PSS-GaN substrate has the TDD of ∼2 × 108cm-2 and BSF density of ∼1 × 103cm-1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.

Modelling the relationship between biomechanics and performance of young sprinting swimmers

The aim of this study was to compute a swimming performance confirmatory model based on biomechanical parameters. The sample included 100 young swimmers (overall: 12.3 ± 0.74 years; 49 boys: 12.5 ± 0.76 years; 51 girls: 12.2 ± 0.71 years; both genders in Tanner stages 1-2 by self-report) participating on a regular basis in regional and national-level events. The 100 m freestyle event was chosen as the performance indicator. Anthropometric (arm span), strength (throwing velocity), power output (power to overcome drag), kinematic (swimming velocity) and efficiency (propelling efficiency) parameters were measured and included in the model. The path-flow analysis procedure was used to design and compute the model. The anthropometric parameter (arm span) was excluded in the final model, increasing its goodness-of-fit. The final model included the throw velocity, power output, swimming velocity and propelling efficiency. All links were significant between the parameters included, but the throw velocity-power output. The final model was explained by 69% presenting a reasonable adjustment (model's goodness-of-fit; x(2)/df = 3.89). This model shows that strength and power output parameters do play a mediator and meaningful role in the young swimmers' performance.

Components and circuits for tunneling diode based high frequency sources

Terahertz (THz) technology has been generating a lot of interest because of the potential applications for systems working in this frequency range. However, to fully achieve this potential, effective and efficient ways of generating controlled signals in the terahertz range are required. Devices that exhibit negative differential resistance (NDR) in a region of their current-voltage (I-V ) characteristics have been used in circuits for the generation of radio frequency signals. Of all of these NDR devices, resonant tunneling diode (RTD) oscillators, with their ability to oscillate in the THz range are considered as one of the most promising solid-state sources for terahertz signal generation at room temperature. There are however limitations and challenges with these devices, from inherent low output power usually in the range of micro-watts (uW) for RTD oscillators when milli-watts (mW) are desired. At device level, parasitic oscillations caused by the biasing line inductance when the device is biased in the NDR region prevent accurate device characterisation, which in turn prevents device modelling for computer simulations. This thesis describes work on I-V characterisation of tunnel diode (TD) and RTD (fabricated by Dr. Jue Wang) devices, and the radio frequency (RF) characterisation and small signal modelling of RTDs. The thesis also describes the design and measurement of hybrid TD oscillators for higher output power and the design and measurement of a planar Yagi antenna (fabricated by Khalid Alharbi) for THz applications. To enable oscillation free current-voltage characterisation of tunnel diodes, a commonly employed method is the use of a suitable resistor connected across the device to make the total differential resistance in the NDR region positive. However, this approach is not without problems as the value of the resistor has to satisfy certain conditions or else bias oscillations would still be present in the NDR region of the measured I-V characteristics. This method is difficult to use for RTDs which are fabricated on wafer due to the discrepancies in designed and actual resistance values of fabricated resistors using thin film technology. In this work, using pulsed DC rather than static DC measurements during device characterisation were shown to give accurate characteristics in the NDR region without the need for a stabilisation resistor. This approach allows for direct oscillation free characterisation for devices. Experimental results show that the I-V characterisation of tunnel diodes and RTD devices free of bias oscillations in the NDR region can be made. In this work, a new power-combining topology to address the limitations of low output power of TD and RTD oscillators is presented. The design employs the use of two oscillators biased separately, but with the combined output power from both collected at a single load. Compared to previous approaches, this method keeps the frequency of oscillation of the combined oscillators the same as for one of the oscillators. Experimental results with a hybrid circuit using two tunnel diode oscillators compared with a single oscillator design with similar values shows that the coupled oscillators produce double the output RF power of the single oscillator. This topology can be scaled for higher (up to terahertz) frequencies in the future by using RTD oscillators. Finally, a broadband Yagi antenna suitable for wireless communication at terahertz frequencies is presented in this thesis. The return loss of the antenna showed that the bandwidth is larger than the measured range (140-220 GHz). A new method was used to characterise the radiation pattern of the antenna in the E-plane. This was carried out on-wafer and the measured radiation pattern showed good agreement with the simulated pattern. In summary, this work makes important contributions to the accurate characterisation and modelling of TDs and RTDs, circuit-based techniques for power combining of high frequency TD or RTD oscillators, and to antennas suitable for on chip integration with high frequency oscillators.

High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation

Resonant tunnelling diode (RTD) is known to be the fastest electronics device that can be fabricated in compact form and operate at room temperature with potential oscillation frequency up to 2.5 THz. The RTD device consists of a narrow band gap quantum well layer sandwiched between two thin wide band gap barriers layers. It exhibits negative differential resistance (NDR) region in its current-voltage (I-V) characteristics which is utilised in making oscillators. Up to date, the main challenge is producing high output power at high frequencies in particular. Although oscillation frequencies of ~ 2 THz have been already reported, the output power is in the range of micro-Watts. This thesis describes the systematic work on the design, fabrication, and characterisation of RTD-based oscillators in microwave/millimetre-wave monolithic integrated circuits (MMIC) form that can produce high output power and high oscillation frequency at the same time. Different MMIC RTD oscillator topologies were designed, fabricated, and characterised in this project which include: single RTD oscillator which employs one RTD device, double RTDs oscillator which employs two RTD devices connected in parallel, and coupled RTD oscillators which combine the powers of two oscillators over a single load, based on mutual coupling and which can employ up to four RTD devices. All oscillators employed relatively large size RTD devices for high power operation. The main challenge was to realise high oscillation frequency (~ 300 GHz) in MMIC form with the employed large sized RTD devices. To achieve this aim, proper designs of passive structures that can provide small values of resonating inductances were essential. These resonating inductance structures included shorted coplanar wave guide (CPW) and shorted microstrip transmission lines of low characteristics impedances Zo. Shorted transmission line of lower Zo has lower inductance per unit length. Thus, the geometrical dimensions would be relatively large and facilitate fabrication by low cost photolithography. A series of oscillators with oscillation frequencies in the J-band (220 – 325 GHz) range and output powers from 0.2 – 1.1 mW have been achieved in this project, and all were fabricated using photolithography. Theoretical estimation showed that higher oscillation frequencies (> 1 THz) can be achieved with the proposed MMIC RTD oscillators design in this project using photolithography with expected high power operation. Besides MMIC RTD oscillators, reported planar antennas for RTD-based oscillators were critically reviewed and the main challenges in designing high performance integrated antennas on large dielectric constant substrates are discussed in this thesis. A novel antenna was designed, simulated, fabricated, and characterised in this project. It was a bow-tie antenna with a tuning stub that has very wide bandwidth across the J-band. The antenna was diced and mounted on a reflector ground plane to alleviate the effect of the large dielectric constant substrate (InP) and radiates upwards to the air-side direction. The antenna was also investigated for integration with the all types of oscillators realised in this project. One port and two port antennas were designed, simulated, fabricated, and characterised and showed the suitability of integration with the single/double oscillator layout and the coupled oscillator layout, respectively.

STATE OF CHARGE BALANCING DROOP CONTROL

This thesis presents a load sharing method applied in a distributed micro grid system. The goal of this method is to balance the state-of-charge (SoC) of each parallel connected battery and make it possible to detect the average SoC of the system by measuring bus voltage for all connected modules. In this method the reference voltage for each battery converter is adjusted by adding a proportional SoC factor. Under such setting the battery with a higher SoC will output more power, whereas the one with lower SoC gives out less. Therefore the higher SoC battery will use its energy faster than the lower ones, and eventually the SoC and output power of each battery will converge. And because the reference voltage is related to SoC status, the information of the average SoC in this system could be shared for all modules by measuring bus voltage. The SoC balancing speed is related to the SoC droop factors. This SoC-based load sharing control system is analyzed in feasibility and stability. Simulations in MATLAB/Simulink are presented, which indicate that this control scheme could balance the battery SoCs as predicted. The observation of SoC sharing through bus voltage was validated in both software simulation and hardware experiments. It could be of use to non-communicated distributed power system in load shedding and power planning.