暖温带落叶阔叶混交林能量生态学研究

本文是首篇研究中国暖温带落叶阔叶混交林能量生态学的论文。在文中，笔者以详实的第一手资料从能量环境、能量流动、能量组合以及能量平衡几个方面，全面、系统地阐述、分析了辽东栎林——这一暖温带落叶阔叶混交林典型自然群落代表的能量生态学特征。 在能量环境一章中，笔者从能量流动，能量平衡的角度出发重点研究了辽东栎群落的辐射能量环境特征。笔者以1991-1993年的观测资料为基础，从乔木、灌木和草本三个层次分析了生长季总辐射、散射辐射、直射辐射、反射辐射、净辐射、先合有效辐射、透射辐射、吸收辐射以及乔木层和灌木层反射率的季节动态和日进程特征，并从天文因子、气象因子和群落自身发育特征几方面解释分析了辐射能量环境的这种时空动态特征，同时，分析了这种变化特征对群落能量流动、分配和平衡过程可能产生的影响。 另外，笔者也对群落湿度和风速环境的时空动态特征进行了分析。 在能量流动一章，笔者以1992-1993年的野外实验资料为依据，沿季节动态、月际变化和日进程的时间轴，从群落、乔木层、灌木层、草本层以及各乔、灌木种群的空间尺度详细分析、阐述了太阳辐射能在森林群落内的流动和转化特征，并从能量环境和群落发育的角度解释分析了能量在群落内的这种时空分布和转化特征。所讨论的能流对象包括群落、乔、灌、草各层及各乔、灌木种群的总能流固定量、叶片呼吸耗能量、剩余能流固定量以及沿枯枝落叶流出的能流量。 与分析能流过程同步，笔者从上述的时、空尺度分别以生长季内太阳总辐射和光合有效辐射为基础计算、分析了森林群落的光能转化率特征。 在这一章的最后，笔者概述性地介绍了辽东栎群落的能量平衡特征 在第四章，笔者从能值的角度出发，以能量密度为标准讨论了能量沿群落各层及各乔、灌木种群的积累、分配和组合特征，并讨论了能量流动和光能转化率与热值和能量密度的关系。 辽东栎群落能量生态学的研究不但为了解暖温带落叶阔叶林生态系统的结构和功能，为恢复和重建退化的森林生态系统提供了丰富详实的理论信息，而且，也为山区人工林优化模式的组建提供了理论依据和实践指南。

光系统II反应中心吸能和转能的分子机理研究

全文分两部分，(1)．PsⅡ反应中心色素分子光破坏的分子机理研究;(2)．PSⅡ反应中心原初反应的动力学机理研究。 在第一部分中，在分离纯化的光系统Ⅱ反应中心Dl/D2/Cyt b559复合物中，采用高效液相色谱技术，首次发现PSⅡ反应中心去镁叶绿素分子的光照破坏，研究了去镁叶绿素的光破坏机理，观察到PsⅡ反应中心内部存在一个与光化学活性无关的去镁叶绿素分子，从而提供了PSⅡ反应中心存在两条电子传递链的第一个实验证据，提出了去镁叶绿素对PsⅡ反应中心的光保护假说和光合作用反应中心第二条电子传递支路的光保护假说。用高效液相色谱技术还观察到PSⅡ反应中心的6个叶绿素a分子，有三种不同的存在状态，认为PSl反应中心的最小色素组成为每个反应中心含有4个叶绿素a和2个去镁叶绿素。用光破坏的方法证明PsⅡ原初电子供体P680是由两个叶绿素n分子组成，认为P680是以一个二聚体形式存在，首次发现P680的光破坏过程包含失去中心镁原子的反应。 在第二部分中，用皮秒和飞秒时间分辨光谱技术，在PsⅡ颗粒、PsⅡ核心复合物和PSⅡ反应中心三个层次上，研究了PsⅡ原初反应的动力学性质，着重研究电荷分离和PsⅡ反应中心内部的能量传递过程。结果表明，B-胡萝卜素和P680之间的能量传递时间常数为350p8左右，去镁叶绿素a与P680之间的能量传递时间为lOOp8左右，提出了可能的动力学模型。 在目前分歧最大的原初电荷分离时间常数测定这一焦点问题上，得到的初步结果表明PsⅡ反应中心电荷分离时间为3-3.5pa左右，这一结论与文献上报道的21pa不同，丽倾向于支持国际上3p8的观点。

光系统Ⅱ核心天线复合物CP43和CP47的分离纯化及其光谱学特性的研究

应用改进DEAE-Toyopearl 650S阴离子交换柱层析从高等植物菠菜(Spinacia oleracea)中分离纯化了核心天线复合物CP43和CP47。并对它们的纯度和完整性色素种类和含量，以及色素分子的结合状态进行了研究并对色素分子间的能量传递机制进行了讨论。结果如下： 1、HPLC检测结果表明：纯化的CP43和CP47均只含Chla和β-Car两种色素分子，并且，平均每分子CP43多肽含19-20分子Chla和4-5分子β-Car;而平均每分CP47则含20-21分子Chla和3-4分子β-Car。 2、以436nm和480nm激发光激发样品得到的CP43和CP47的低温荧光发射光谱的最大荧光发射峰分别位于683nm和693nm。进一步发现，CP43和CP47，在相同条件下分别以436nm和480nm激发光激发样品得到的低温荧光发射光谱经归一化后几乎完全重叠，而且400-500nm波长范围内的激发光扫描得到的三维低温荧光发射光谱沿激发轴具有较好的对应关系，表明纯化的CP43和CP47都具有较高的完整性。 3、纯化的CP43和CP47的吸收光谱的红区最大吸收峰分别位于671nm和674nm。该光区的导数光谱均分辨出偏蓝区和偏红区两个子峰，CP43的这两个子峰分别位于669nm和682nm;而CP47的两个子峰则分别位于669nm和680nm。进一步用包含这两个子峰的高斯解析参数对红区最大吸收峰进行拟合，结果证明，拟合的曲线与实测曲线几乎完全吻合，这表明，CP43和CP47均至少包含两种不同状态的Chla分子。 3．1应用不同的变性温度处理CP43，发现随变性温度的不断提高，其红区最大吸收峰的峰值逐渐减小，四阶导数光谱分辨出的两个子峰同时减小，但差光谱显示：随处理温度的不断提高，这两个组分峰值的变化并不同步进行，较低温度范围内(55℃以下)682nm吸收峰下降明显，而较高温度范围内(55℃以上)，669nm吸收峰下降明显。 同时，随处理温度不断提高CP43脱辅基蛋白的结构也在不断发生变化，其变化过程明显表现出两个跃变阶段。这两个跃变阶段分别出现在40～50℃范围内和55～60℃范围内，恰与吸收光谱两个组分峰变化的转变过程相一致。这证明，CP43中分别位于669nm和682nm的不同的色谱组分即代表两种不同结合态的Chla分子，分别简称为“CP43-669”和“CP43-682”。它们在色素蛋白复合物中所处的环境不同，因而对蛋白质结构的依赖性不同，前者更高地依赖于蛋白复合物的整体构象，而后者则主要依赖于蛋白质的二级结构。 3.2 经不同的变性温度处理的CP47，其红区最大吸收峰的峰位逐渐蓝移，而吸收峰值无明显的变化，只有当处理温度提高到65℃以后，蓝移后的吸收峰值(669nm)才开始明显减小;四阶导数光谱表现为680nm吸收峰的信号逐渐下降669nm的吸收信号逐渐明显;处理减对照差光谱只观察到680nm吸收值的逐渐减少，而几乎观察不到669nm吸收值的变化。同时，随变性温度的不断提高，CP47的脱辅基蛋白的结构也发生相应的变化与CP43不同，蛋白结构变化最大的温度范围为60℃～65℃之间，但同CP47的峰位蓝移、导数光谱中680nm信号的减小，以及差光谱中680nm吸收值的减小相一致。由此认为，同CP43一样，CP47的吸收光谱中分辨出的分别位于669nm和680nm处的两个不同光谱组分亦分别代表两种不同结合状态的Chla分子，分别简称为“CP47-669”和“CP47-680”，与CP43中的相应组分对应，它们处于不同的蛋白环境中，从而对蛋白质结构变化的依赖性不同。 3.3 CP43和CP47的CD光谱表现出明显的正负双峰，表明色素分子间存在较强的激子相互作用。随变性温度的不断提高，正负CD双峰的信号逐渐减弱，变化过程与脱辅基蛋白结构的变化以及CP43-682的变化相一致，表明色素分子间的激子相互作用更高依赖于CP43-682和CP47-680。并认为CP43-682和CP47-680可能以二聚体或多聚体的形式存在，并且二聚体或多聚体的形成依赖于蛋白天然构象。而CP43-669和CP47-669则以单体的形式位于蛋白结构中相对伸展的区域。并提出：在CP43-682以CP47-680分子之间，激发能主要以激子偶合机制进行而在CP43-669，CP47-669分子间及CP43-669至CP43-682间，CP47-669至CP47-680之间激发能则主要以Foster机制进行。 4、以488nm激发光得到的CP43和CP47的共振拉曼光谱都具有全反式构型类胡萝卜素分子的四个典型特征峰由此认为CP43和CP47中的β-Car分子亦具有全反式构型;与溶于丙酮抽体物中的β-Car分子相比较，CP43和CP47中的β-Car分子的共振拉曼光谱中具有较强的960cm~(-1)的拉曼峰，表明，CP43和CP47中的β-Car分子具有扭曲的构象。 应用经归一化后的吸收光谱与荧光激发光谱相比较的办法发现CP43和CP47中存在β-Car分子和Chla分子间的能量传递其能量传递效率分别为29.8～29.9%和52.3～56.9%。这表明，在正常条件下，CP47中β-Car分子和Chla分子间的能量传递效率远大于CP43。此外，当选用蛋白结构变化最明显的热变性温度处理样品后，发现，不论CP43还是CP47中β-Car与Chla分子间的能量传递效率大大降低，表明，这两种色素分子间的能量传递严格依赖于蛋白复合物的天然构象，并认为，正常条件下，CP43和CP47内β-Car与Chla分子间的空间距离较近，可能不大于10A，CP43和CP47相比较，CP47内这两种色素分子间的距离更近。并进一步提出，在CP43和CP47中，β-Car到Chla分子间的能量传递最大可能以Dexter的电子交换机制进行。

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Effect of process parameters on the morphology and nanostructure of roll-to-roll printed P3HT:PCBM thin films for organic photovoltaics

Roll-to-roll (R2R) gravure exhibits significant advantages such as high precision and throughput for the printing of photoactive and conductive materials and the fabrication of flexible organic electronics such as organic photovoltaics (OPVs). Since the photoactive layer is the core of the OPV, it is important to investigate and finally control the process parameters and mechanisms that define the film morphology in a R2R process. The scope of this work is to study the effect of the R2R gravure printing and drying process on the nanomorphology and nanostructure of the photoactive P3HT:PCBM thin films printed on PEDOT:PSS electrodes towards the fabrication of indium tin oxide (ITO)-free flexible OPVs. In order to achieve this, P3HT:PCBM blends of different concentration were R2R printed under various speeds on the PEDOT:PSS layers. Due to the limited drying time during the rolling, an amount of solvent remains in the P3HT:PCBM films and the slow-drying process takes place which leads to the vertical and lateral phase separation, according to the Spectroscopic Ellipsometry and Atomic Force Microscopy analysis. The enhanced slow-drying leads to stronger phase separation, larger P3HT crystallites according to the Grazing Incidence X-Ray Diffraction data and to weaker mechanical response as it was shown by the nanoindentation creep. However, in the surface of the films the P3HT crystallization is controlled by the impinged hot air during the drying, where the more the drying time the larger the surface P3HT crystallites. The integration of the printed P3HT:PCBM and PEDOT:PSS layers in an OPV device underlined the feasibility of fabricating ITO-free flexible OPVs by R2R gravure processes. © 2013 Elsevier B.V.

Non-destructive optical characterization of phase separation in bulk heterojunction organic photovoltaic cells

The dithiophene donor-acceptor copolymers that are bridged either with carbon (C-PCPDTBT) or silicon atoms (Si-PCPDTBT) belong to a promising family of materials for use in photoactive layers for organic photovoltaic cells (OPVs). In this work, we implement the non-destructive Spectroscopic Ellipsometry technique in the near infrared to the far ultraviolet spectral region in combination with advanced theoretical modeling to investigate the vertical distribution of the C-PCPDTBT and Si-PCPDTBT polymer and fullerene ([6,6]-phenyl C71-butyric acid methyl ester - PC70BM) phases in the blend, as well as the effect of the polymer-to-fullerene ratio on the distribution mechanism. It was found that the C-PCPDTBT:PC70BM blends have donor-enriched top regions and acceptor-enriched bottom regions, whereas the donor and acceptor phases are more homogeneously intermixed in the Si-PCPDTBT:PC70BM blends. We suggest that the chemical incompatibility of the two phases as expressed by the difference in their surface energy, may be a key element in promoting the segregation of the lower surface phase to the top region of the photoactive layer. We found that the increase of the photoactive layer thickness reduces the polymer enrichment at the cathode, producing a more homogeneous phase distribution of donor and acceptor in the bulk that leads to the increase of the OPV efficiency. © 2014 Elsevier B.V.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Hydrogenated amorphous silicon films with significantly improved stability

A new regime of plasma-enhanced chemical-vapor deposition (PECVD), referred to as "uninterrupted growth/annealing" method, has been proposed for preparation of high-quality hydrogenated amorphous silicon (a-Si:H) films. By using this regime, the deposition process no longer needs to be interrupted, as done in the chemical annealing or layer by layer deposition, while the growing surface is continuously subjected to an enhanced annealing treatment with atomic hydrogen created in the hydrogen-diluted reactant gas mixture at a relatively high plasma power. The intensity of the hydrogen plasma treatment is controlled at such a level that the deposition conditions of the resultant films approach the threshold for microcrystal formation. In addition, a low level of B-compensation is used to adjust the position of the Fermi level close to the midgap. Under these conditions, we find that the stability and optoelectronic properties of a-Si:H films have been significantly improved. (C) 2001 Elsevier Science B.V. All rights reserved.

Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/1-s 850 degrees C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate. (C) 2000 Elsevier Science B.V. All rights reserved.