Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors

This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm2V-1 s-1. representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. © 2008 IEEE.

Formation of composite organic thin film transistors with nanotubes and nanowires

Plastic electronics is a rapidly expanding topic, much of which has been focused on organic semiconductors. However, it is also of interest to find viable ways to integrate nanomaterials, such as silicon nanowires (SiNWs) and carbon nanotubes (CNTs), into this technology. Here, we present methods of fabrication of composite devices incorporating such nanostructured materials into an organic matrix. We investigate the formation of polymer/CNT composites, for which we use the semiconducting polymer poly(3,3‴-dialkyl-quaterthiophene) (PQT). We also report a method of fabricating polymer/SiNW TFTs, whereby sparse arrays of parallel oriented SiNWs are initially prepared on silicon dioxide substrates from forests of as-grown gold-catalysed SiNWs. Subsequent ink-jet printing of PQT on these arrays produces a polymer/SiNW composite film. We also present the electrical characterization of all composite devices. © 2007 Elsevier B.V. All rights reserved.

Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200°C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.

Effect of hydrogen dilution on the deposition of carbon-rich a-SiC:H films by the electron cyclotron resonance method

The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation in the deposition and film characteristics such as the deposition rate, optical band gap and IR absorption as a function of the hydrogen dilution is investigated. The deposition rate increases to a maximum value of about 250 Å min-1 at a hydrogen dilution ratio of about 20 (hydrogen flow (sccm)/acetylene + silane flow (sccm)) and decreases in response to a further increase in the hydrogen dilution. There is no strong dependence of the optical band gap on the hydrogen dilution within the dilution range investigated (10-60) and the optical band gap calculated from the E04 method varied marginally from about 2.85 to 3.17 eV. The room temperature photoluminescence (PL) peak energy and intensity showed a prominent shift to a maximum value of about 2.17 eV corresponding to maximum PL intensity at a moderate hydrogen dilution of about 30. The PL intensity showed a strong dependence on the hydrogen dilution variation.

Properties of tetrahedral amorphous carbon deposited by a filtered cathodic vacuum arc

The properties of a highly sp3 bonded form of amorphous carbon denoted ta-C deposited from a filtered cathodic vacuum arc (FCVA) are described as a function of ion energy and deposition temperature. The sp3 fraction depends strongly on ion energy and reaches 85% at an ion energy of 100 eV. Other properties such as density and band gap vary in a similar fashion, with the optical gap reaching a maximum of 2.3 eV. These films are very smooth with area roughness of order 1 nm. The sp3 fraction falls suddenly to almost zero for deposition above about 200 °C.

Evaluación de los factores de la ecuación universal de pérdidas de suelo en la micro cuenca "D", de la Cuenca Sur del Lago de Managua

El presente estudio se realizó en la micro cuenca "D", de la Cuenca Sur del Lago de Managua. Se determinaron los factores de la E.U.P.S., las pérdidas de suelo reales estimadas por la metodología de Coschoton y la influencia de la cobertura vegetal de los cultivos de maíz (60,81 l pts/ha) y frijol (225,225 pts/ha) en rotaciones únicas sembradas a curvas a nivel. Se utilizaron 6 parcelas de escurrimiento bajo la metodología de Wishmeier, con dimensiones de 2 m de ancho y 22.2 m de largo por cada parcela. Las variables evaluadas fueron las pérdidas de suelo reales por evento lluvioso, y los factores de la E.U.P.S. La información se presenta de forma descriptiva. Según datos obtenidos en el estudio demostraron que las parcelas desnudas presentaron las mayores pérdidas de suelo reales en el ciclo de primera como postrera, las parcelas cultivadas con maíz resultó ser más efectivo que las parcelas cultivadas con frijol en la época de primera, en postrera las pérdidas de suelo disminuyeron sustancialmente siendo las parcelas cultivadas con frijol las más efectivas dado que no presentó pérdidas de suelo. Los meses de Junio, Agosto y Septiembre son los meses con mayor susceptibilidad a las pérdidas de suelo coincidiendo éstas en la fase de germinación y plántula cuando la protección del cultivo es baja o nula Dicha rotación presentó valores de pérdidas de suelo por arriba de los niveles de tolerancia anuales propuestos por Mennering (1981) y Schertz (1993), recomendando implementar otras técnicas de conservación de suelo adicional a la práctica de cultivos en contornos para reducir las pérdidas de suelo.

3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400°C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.

Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

Development of all metal electrothermal actuator and its applications

The in-plane motion of microelectrothermal actuator ("heatuator") has been analyzed for Si-based and metallic devices. It was found that the lateral deflection of a heatuator made of a Ni metal is about ∼60% larger than that of a Si-based actuator under the same power consumption. Metals are much better for thermal actuators as they provide a relatively large deflection and large force, for a low operating temperature and power consumption. Electroplated Ni films were used to fabricate heatuators. The electrical and mechanical properties of electroplated Ni thin films have been investigated as a function of temperature and plating current density, and the process conditions have been optimized to obtain stress-free films suitable for microelectromechanical systems applications. Lateral thermal actuators have been successfully fabricated, and electrically tested. Microswitches and microtweezers utilizing the heatuator have also been fabricated and tested. © 2005 Society of Photo-Optical Instrumentation Engineers.

Evaluación de diferentes períodos de enmalezamiento en viveros de pitahaya (Hylocereus undatus Britt y Rose)

El presente estudio se realizó en la finca Chelol, perteneciente a la cooperativa Ing. Humberto Tapia Barquero, ubicada en el municipio de Jinotepe, departamento de Carazo, durante los meses diciembre 96, a marzo 97, con el objetivo de evaluar diferentes periodos de enmalezamiento en viveros de pitahaya (Hylocereus undatus britt & rose) para tal fin se establecieron catorce tratamientos en un diseño completo al azar (DCA}, con veinte observaciones, los tratamientos evaluados fueron: Limpio todo el tiempo, enmalezado hasta los 7, 14, 21, 28, 35, 42, 49, 56, 63, 70, 77 y 84 dias después de la siembra y enmalezado todo el tiempo, utilizando el máximo periodo de tiempo que los tallos modificados que se usan para reproducción asexual de este cultivo (vainas), deben permanecer en viveros (3 meses. La variedad utilizada en este estudio fue la variedad Orejona por ser ésta de interés para los productores de la zona, las variables evaluadas fueron abundancia, biomasa y diversidad de malezas. En donde la abundancia fue de 3 individuos por bolsa a los 21 días después de la siembra y de 6.25 y 6.65 a los 56 y 84 días después de la siembra, la mayor biomasa acumulada se obtuvo en el tratamiento enmalezado todo el tiempo a como era de esperarse y esta fue de 3.06g por bolsa, se identificaron veintiuna especies de malezas, cinco pertenecientes a la monocotiledoneas y dieciséis pertenecientes a las dicotiledoneas, las familias más representativas fueron las Poaceae, Astéraceae y Euphorbiaceae. En las vainas la formación de raices primarias inicia después de la formación de cayos, veintiocho dias después de la siembra, después de la aparición de esta las vainas comienzan a emitir brotes laterales que se presentaron de uno a tres, al momento de establecer los tratamientos y al final del estudio fueron entre 2 y 3 brotes, es importante saber que las vainas que presentaron un brote estos obtuvieron la mayor longitud. La mayor biomasa del sistema radicular fue obtenida a los 84 días después de la siembra. Es conveniente controlar las malezas a los 35 dias después de la siembra para estimular el crecimiento radicular.

Growth of highly-quality single-wall carbon nanotubes without amorphous carbon formation

A simple way to deposit single-wall carbon nanotubes by CVD without the co-deposition of unwanted a-C was demonstrated. It was found that the catalytic deposition of SWCNTs occurs at a substantial rate compared to the self-pyrolysis of the hydrocarbon gas used.