(Table 5) Calcium carbonate, organic carbon, and hydrogen sulfide contents in bottom sediments of Core DM9-666, Gulf of California

New data on phosphorites collected by dredging and trawling at depths from 2700 to 520 m in the open Atlantic Ocean (i.e. outside of the shelf and the continental slope) are reported. Aphanitic, granular, brecciated, and conglomerate-like types are distinguished among the phosphorites. A comparison of the studied phosphorites with ones from the Atlantic shelf of Africa and from seamounts of other oceans is made.

Aluminum slurry coatings to replace cadmium for aeronautic applications

Cadmium has been widely used as a coating to provide protection against galvanic corrosion for steels and for its natural lubricity on threaded applications. However, it is a toxic metal and a known carcinogenic agent, which is plated from an aqueous bath containing cyanide salts. For these reasons, the use of cadmium has been banned in Europe for most industrial applications. However, the aerospace industry is still exempt due to the stringent technical and safety requirements associated with aeronautical applications, as an acceptable replacement is yet to be found. Al slurry coatings have been developed as an alternative to replace cadmium coatings. The coatings were deposited on AISI 4340 steel and have been characterized by optical and electron microscopy. Testing included salt fog corrosion exposure, fluid corrosion exposure (immersion), humidity resistance, coating-substrate and paint-coating adhesion, electric conductivity, galvanic corrosion, embrittlement and fatigue. The results indicated that Al slurry coatings are an excellent alternative for Cd replacement.

Ionization levels of doped copper indium sulfide chalcopyrites

The electronic structure of modified chalcopyrite CuInS2 has been analyzed from first principles within the density functional theory. The host chalcopyrite has been modified by introducing atomic impurities M at substitutional sites in the lattice host with M = C, Si, Ge, Sn, Ti, V, Cr, Fe, Co, Ni, Rh, and Ir. Both substitutions M for In and M for Cu have been analyzed. The gap and ionization energies are obtained as a function of the M-S displacements. It is interesting for both spintronic and optoelectronic applications because it can provide significant information with respect to the pressure effect and the nonradiative recombination.

Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

The cadmium thioindate spinel CdIn2S4 semiconductor has potential applications for optoelectronic devices. We present a theoretical study of the structural and optoelectronic properties of the host and of the Cr-doped ternary spinel. For the host spinel, we analyze the direct or indirect character of the energy bandgap, the change of the energy bandgap with the anion displacement parameter and with the site cation distribution, and the optical properties. The main effect of the Cr doping is the creation of an intermediate band within the energy bandgap. The character and the occupation of this band are analyzed for two substitutions: Cr by In and Cr by Cd. This band permits more channels for the photon absorption. The optical properties are obtained and analyzed. The absorption coefficients are decomposed into contributions from the different absorption channels and from the inter-and intra-atomic components.

Photovoltaic application of the V, Cr and Mn-doped cadmium thioindate

The CdIn2S4 spinel semiconductor is a potential photovoltaic material due to its energy band gap and absorption properties. These optoelectronic properties can be potentiality improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using M = Cr, V and Mn as an impurity. We analyze with first-principles almost all substitutions of the host atoms by M at the octahedral and tetrahedral sites in the normal and inverse spinel structures. In almost all cases, the impurities introduce deeper bands into the host energy bandgap. Depending on the site substitution, these bands are full, empty or partially-full. It increases the number of possible inter-band transitions and the possible applications in optoelectronic devices. The contribution of the impurity states to these bands and the substitutional energies indicate that these impurities are energetically favorable for some sites in the host spinel. The absorption coefficients in the independent-particle approximation show that these deeper bands open additional photon absorption channels. It could therefore increase the solar-light absorption with respect to the host.