Comparison of model predictions and speed trial results for a group of 32' wooden trawlers

Speed trial results of six 32' wooden stern, trawlers built to the same design are analyzed to determine the EHP ship Froude number curves in each case and are compared with the model test results of the same design and for the corresponding, displacement, conditions.

HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

High-speed wavelength conversion utilizing birefringence in semiconductor optical amplifiers

This paper describes a novel technique whereby a mixture of cross-phase and cross-gain modulation effects in an SOA causes polarization rotation of a cw probe beam in the presence of a signal pulse, enabling the transmission of the probe through a polarizer to be controlled. The benefits of this approach are: 1) Very high extinction ratios present in the wavelength converted signal (>30 achieved); 2) A non-inverted wavelength converted signal, which is advantageous for chirp-compensation;2 3) A simple and stable experimental set-up, 4) Converted pulses which can be shaped to be faster than the input pulses.

Chirp limitation on high-speed wavelength conversion using semiconductor optical amplifiers

The cross-gain-saturation effect in SOAs, has been shown to enable robust high-speed wavelength conversion. Under strong electrical and optical pumping, conversion speeds in excess of 20 Gbit/s have been illustrated. However, the effect of chirp on transmission distance at such ultrahigh bit rates has not been studied theoretically in detail. This paper considers the chirp introduced on conversion, employing cross-gain saturation, and studies its dependence on amplifier drive current and signal power. It further shows how an increase in injected cw optical power can reduce chirp while improving conversion speed.

High speed wavelength conversion utilising an integrated amplifier/DFB laser

Wavelength conversion in the 1.55-μm regime was achieved for the first time in an integrated SOA/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. In terms of speed, response times as low as 13ps were observed, though at the expense of reduced extinction ratio. Generally, these results indicate that operation in the 10s of GB/s should be possible.

High speed performance of Mach-Zehnder all-optical regenerators using semiconductor optical amplifiers

Interferometric Optical Wavelength Converters (IOWCs) provide wavelength conversion functionality at high bit rates, and give low chip and enhanced extinction ratio compared with Cross-Gain wavelength converters. In paper, a numerical simulation is conducted to assess the noise performance of IOWC and its potential for cascading. The details of the experiment and the results obtained are presented.

Switching speed enhancement of the LDMOSFETs using partial-SOI technology

To overcome reduced breakdown voltage and self-heating effects inherent in silicon-on-insulator (SOI) power integrated circuits while still maintaining good isolation between low power CMOS circuits and the high power cells, partial SOI (PSOI) technology has been proposed. PSOI devices make use of both buried oxide and substrate depletion to support the breakdown voltage. 2D analyses and modeling of parasitic capacitances in PSOI structures show that PSOI-lightly doped MOSFETs can increase the switching speed by as much as four times compared to conventional SOI structures, making them very attractive for high switching applications.

On the domain decomposition and transmission line modelling finite element method for time-domain induction motor analysis

This paper demonstrates how a finite element model which exploits domain decomposition is applied to the analysis of three-phase induction motors. It is shown that a significant gain in cpu time results when compared with standard finite element analysis. Aspects of the application of the method which are particular to induction motors are considered: the means of improving the convergence of the nonlinear finite element equations; the choice of symmetrical sub-domains; the modelling of relative movement; and the inclusion of periodic boundary conditions. © 1999 IEEE.

Application of domain decomposition and transmission line modelling techniques to 2D, time-domain, finite element problems

In this paper a recently published finite element method, which combines domain decomposition with a novel technique for solving nonlinear magnetostatic finite element problems is described. It is then shown how the method can be extended to, and optimised for, the solution of time-domain problems. © 1999 IEEE.