Superradiant emission in semiconductor diode laser structures

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed. © 1995-2012 IEEE.

Structural and optical properties of axial and radial heterostructure III-V nanowires grown by metalorganic chemical vapour deposition

We have investigated the structural properties and photoluminescence of novel axial and radial heterostructure III-V nanowires, fabricated by metalorganic chemical vapour deposition. Segments of InGaAs have been incorporated within GaAs nanowires, to create axial heterostructure nanowires which exhibit strong photoluminescence. Photoluminescence is observed from radial heterostructure nanowires (core-shell nanowires), consisting of GaAs cores with AlGaAs shells. Core-multishell nanowires, of GaAs cores clad in several alternating layers of thick AlGaAs barrier shells and thin GaAs quantum well shells, exhibit a blue-shifted photoluminescence peak arising from quantum confinement effects. © 2006 Crown Copyright.

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

Gas-phase ion-molecule reactions of C-60 with the plasma of methyl acrylate

The gas-phase ion-molecule reactions of C-60 with the plasma generated from methyl acrylate under self-chemical ionization conditions were studied by use of a triple-quadrupole mass spectrometer. The adduct cation [C60C3H3O](+) and protonated molecular ion [C60H](+) were observed as the major product ions. The former adduct ion is formed by electrophilic reaction of C-60 with the ion [CH2=CHCO](+), a main fragment ion resulting from the methyl acrylate molecular ion [CH2=CHCOOCH3](+) through alpha cleavage. The latter ion is generated by proton transfer from protonated methyl acrylate to C-60. Semi-empirical quantum chemical calculations have been performed for the eight possible isomers of [C60C3H3O](+) at the Hartree-Fock level by use of the AMI method. The results show three types of cycloadducts as the most stable structures among the possible isomers.

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Dynamic in situ optical and magneto-optical monitoring of the growth of Co-Pd multilayers

In situ ellipsometry and Kerr polarimetry have been used to follow the continuous evolution of the optical and magneto- optical properties of multiple layers of Co and Pd during their growth. Films were sputter deposited onto a Pd buffer layer on glass substrates up to a maximum of N = 10 bi-layer periods according to the scheme glass/Pd(10)Ar x (0.3Co/3Pd) (nm). Magnetic hysteresis measurements taken during the deposition consistently showed strong perpendicular anisotropy at all stages of film growth following the deposition of a single monolayer of Co. Magneto-optic signals associated with the normal-incidence polar Kerr effect indicated strong polarization of Pd atoms at both Co-Pd and Pd-Co interfaces and that the magnitude of the complex magneto-optic Voigt parameter and the magnetic moment of the Pd decrease exponentially with distance from the interface with a decay constant of 1.1 nm(- 1). Theoretical simulations have provided an understanding of the observations and allow the determination of the ultrathin- film values of the elements of the skew-symmetric permittivity tensor that describe the optical and magneto-optical properties for both CO and Pd. Detailed structure in the observed Kerr ellipticity shows distinct Pd-thickness-dependent oscillations with a spatial period of about 1.6 nm that are believed to be associated with quantum well levels in the growing Pd layer.

Dynamic, in situ optical, magnetic and magneto-optical monitoring of the growth of Co/Au and Pd/Co/Au multilayer systems

The growth of magnetron sputtered Co/Au and Pd/Co/Au superlattices on Au and Pd buffer layers, deposited onto glass substrates, has been monitored optically and magneto-optically in real time, using rotating analyser ellipsometry and Kerr polarimetry, at a wavelength of 633 nm. The magneto-optical traces, combined with ex situ and in situ hysteresis loops, provide a detailed and informative fingerprint of the optical and magnetic properties of the films as they evolve during growth. For Co/Au, oscillations in the polar magneto-optical effect developed during the deposition of An overlayers on Co and these may be attributed to quantum well states. However, the hysteresis measurements show that the magnetic field required to maintain saturation magnetization throughout the experiment was larger than available in situ, introducing a degree of confusion concerning the interpretation of the data. This problem was overcome by the incorporation of Pd layers into the Co/Au structure, thereby eliminating variation in magnetic orientation during growth of the Au layers as a contributory factor to the observations.

Effect of defects on optical phonon Raman spectra in SiC nanorods

Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental observation and numerical calculation indicate that the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the Raman features of optical phonons in polar semiconductor quantum wires such as SiC nanorods, (C) 1999 Elsevier Science Ltd. All rights reserved.

Optical processing devices and techniques for next generation optical networks

Este trabalho surge do interesse em substituir os nós de rede óptica baseados maioritariamente em electrónica por nós de rede baseados em tecnologia óptica. Espera-se que a tecnologia óptica permita maiores débitos binários na rede, maior transparência e maior eficiência através de novos paradigmas de comutação. Segundo esta visão, utilizou-se o MZI-SOA, um dispositivo semicondutor integrado hibridamente, para realizar funcionalidades de processamento óptico de sinal necessárias em nós de redes ópticas de nova geração. Nas novas redes ópticas são utilizados formatos de modulação avançados, com gestão da fase, pelo que foi estudado experimentalmente e por simulação o impacto da utilização destes formatos no desempenho do MZI-SOA na conversão de comprimento de onda e formato, em várias condições de operação. Foram derivadas regras de utilização para funcionamento óptimo. Foi também estudado o impacto da forma dos pulsos do sinal no desempenho do dispositivo. De seguida, o MZI-SOA foi utilizado para realizar funcionalidades temporais ao nível do bit e do pacote. Foi investigada a operação de um conversor de multiplexagem por divisão no comprimento de onda para multiplexagem por divisão temporal óptica, experimentalmente e por simulação, e de um compressor e descompressor de pacotes, por simulação. Para este último, foi investigada a operação com o MZI-SOA baseado em amplificadores ópticos de semicondutor com geometria de poço quântico e ponto quântico. Foi também realizado experimentalmente um ermutador de intervalos temporais que explora o MZI-SOA como conversor de comprimento de onda e usa um banco de linhas de atraso ópticas para introduzir no sinal um atraso seleccionável. Por fim, foi estudado analiticamente, experimentalmente e por simulação o impacto de diafonia em redes ópticas em diversas situações. Extendeu-se um modelo analítico de cálculo de desempenho para contemplar sinais distorcidos e afectados por diafonia. Estudou-se o caso de sinais muito filtrados e afectados por diafonia e mostrou-se que, para determinar correctamente as penalidades que ocorrem, ambos os efeitos devem ser considerados simultaneamente e não em separado. Foi estudada a escalabilidade limitada por diafonia de um comutador de intervalos temporais baseado em MZI-SOA a operar como comutador espacial. Mostrou-se também que sinais afectados fortemente por não-linearidades podem causar penalidades de diafonia mais elevadas do que sinais não afectados por não-linearidades. Neste trabalho foi demonstrado que o MZI-SOA permite construir vários e pertinentes circuitos ópticos, funcionando como bloco fundamental de construção, tendo sido o seu desempenho analisado, desde o nível de componente até ao nível de sistema. Tendo em conta as vantagens e desvantagens do MZI-SOA e os desenvolvimentos recentes de outras tecnologias, foram sugeridos tópicos de investigação com o intuito de evoluir para as redes ópticas de nova geração.

Photophysical Investigations of Thiophene Azomethine Derivatives

Une série de dimères composés de thiophène-aniline encombrée stériquement a été synthétisée. Les différents processus de désactivation de l’état singulet excité ont été étudiés par UV-visible, fluorescence, phosphorescence, photolyse par impulsion laser et calculs théoriques. Les graphiques de Stern-Volmer obtenus à partir des expériences de désactivation des états singulet et triplet ont démontré l’efficacité de l’azométhine à désactiver les fluorophores. Les calculs semi-empiriques AM1 examinant l’effet des substituants encombrés ont démontrés que les groupements tert-butyls sur l’aniline ont moins d’influence sur la barrière de rotation N-aryl que les substitutions alkyles en ont sur la rotation de thiophène-C. Les calculs Rehm-Weller basés sur les potentiels d’oxydation et de réduction ont montré que l’autodésactivation de l’état excité des azométhines se fait par transfert d’électron photoinduit menant à une éradication complète de la fluorescence. Des complexes métalliques contenant des ligands azométhines ont aussi été préparés. Le ligand est composé d’une unité hydroxyquinoline lié à un cycle thiophène. Les données photophysiques de ces complexes indiquent un déplacement bathochromique aussi bien en absorbance qu’en fluorescence. Des dispositifs de détection d’ion métallique ont été préparés et un exemple à partir d’une solution de cuivre a montré un déplacement bathochromique.

Dynamique de recombinaison dans les puits quantiques InGaN/GaN

Nous étudions la recombinaison radiative des porteurs de charges photogénérés dans les puits quantiques InGaN/GaN étroits (2 nm). Nous caractérisons le comportement de la photoluminescence face aux différentes conditions expérimentales telles la température, l'énergie et la puissance de l'excitation et la tension électrique appliquée. Ces mesures montrent que l'émission provient d'états localisés. De plus, les champs électriques, présents nativement dans ces matériaux, n'ont pas une influence dominante sur la recombinaison des porteurs. Nous avons montré que le spectre d'émission se modifie significativement et subitement lorsque la puissance de l'excitation passe sous un certain seuil. L'émission possède donc deux ``phases'' dont nous avons déterminé le diagramme. La phase adoptée dépend à la fois de la puissance, de la température et de la tension électrique appliquée. Nous proposons que la phase à basse puissance soit associée à un état électriquement chargé dans le matériau. Ensuite, nous avons caractérisé la dynamique temporelle de notre échantillon. Le taux de répétition de l'excitation a une influence importante sur la dynamique mesurée. Nous concluons qu'elle ne suit pas une exponentielle étirée comme on le pensait précédemment. Elle est exponentielle à court temps et suit une loi de puissance à grand temps. Ces deux régimes sont lié à un seul et même mécanisme de recombinaison. Nous avons développé un modèle de recombinaison à trois niveaux afin d'expliquer le comportement temporel de la luminescence. Ce modèle suppose l'existence de centres de localisation où les porteurs peuvent se piéger, indépendamment ou non. L'électron peut donc se trouver sur un même centre que le trou ou sur n'importe quel autre centre. En supposant le transfert des porteurs entre centres par saut tunnel on détermine, en fonction de la distribution spatiale des centres, la dynamique de recombinaison. Ce modèle indique que la recombinaison dans les puits InGaN/GaN minces est liée à des agglomérats de centre de localisation.

Étude des mécanismes de capture et de fuite des excitons dans les boîtes quantiques d'InAs/InP

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Études des fuites excitoniques dans des familles de boîtes quantiques d'InAs/InP par PLRT par addition de fréquences

Ce mémoire porte sur les mécanismes de relaxation et de fuite des excitons dans des systèmes de boîtes quantiques(BQs) d’InAs/InP. Les systèmes sont composés d’un sub- strat volumique d’InP, appelé matrice (M), d’un puits quantique d’InAs, nommé couche de mouillage (CM), et des familles de BQs d’InAs. La distinction entre les familles est faite par le nombre de monocouche d’épaisseur des boîtes qui sont beaucoup plus larges que hautes. Une revue de littérature retrace les principaux mécanismes de relaxation et de fuite des excitons dans les systèmes. Ensuite, différents modèles portant sur la fuite thermique des excitons des BQs sont comparés. Les types de caractérisations déjà produites et les spécifications des croissances des échantillons sont présentés. L’approche adoptée pour ce mémoire a été de caractériser temporellement la dynamique des BQs avec des mesures d’absorbtion transitoire et de photoluminescence résolue en temps (PLRT) par addition de fréquences. L’expérience d’absorption transitoire n’a pas fait ressortir de résultats très probants, mais elle est expliquée en détails. Les mesures de PLRT ont permis de suivre en température le temps de vie effectif des excitons dans des familles de BQs. Ensuite, avec un modèle de bilan détaillé, qui a été bien explicité, il a été possible d’identifier le rôle de la M et de la CM dans la relaxation et la fuite des excitons dans les BQs. Les ajustements montrent plus précisément que la fuite de porteurs dans les BQs se fait sous la forme de paires d’électrons-trous corrélées.