Influence of TeO2, PbF2, ZnF2 on the spectroscopic and lasing properties of Yb3+ doped fluorophosphate glass

The influence of TeO2 on the crystallization stability, thermal stability, spectroscopic and lasing properties of Yb3+ doped fluorophosphate (FP) glass was studied. It is shown that 2 mol% TeO2 is the optimum doping amount which results in better spectroscopic and lasing properties as well as improve the crystallization and thermal stabilities of the glass. In order to enhance the physical and optical properties further, the effect of PbF2 and ZnF2 to the TeO2 contained FP glasses is also investigated, which shows that PbF2 has advantages in improving the crystallization properties while ZnF2 is preferable in enhancing spectroscopic and lasing properties. Results indicate that the co-existence of TeO2, PbF2 or ZnF2 is an effective way to enhance the spectroscopic, lasing and physical properties of Yb3+ doped FP glasses. (c) 2004 Published by Elsevier B.V.

Effects of chloride substitution on the chemical and physical properties and the crystallization behavior in heavy metal fluoride glasses

Effect of the substitutions of chloride for fluoride on the chemical and physical properties and the crystallization behavior in heavy metal fluoride glasses has been investigated. The characteristic temperature of the glass does not changed obviously when the fluoride was taken place by chloride. Compared with samples of being free of ErF3, the doping samples are more inclined to be surface crystallization. Optical basicity in the glass system increases with increasing the negative charge provided by the chloride atoms and the absorption peak red shifted is observed in absorption spectra. XRD measurements show that not a single crystalline phase appears in the heated glass samples, which indicate the substitutions of chloride for fluoride with a variety of crystalline precipitation trends. (c) 2007 Elsevier B.V All rights reserved.

Preparation and spectroscopic properties of Yb-doped and Yb-Al-codoped high silica glasses

Yb-doped and Yb-Al-codoped high silica glasses have been prepared by sintering nanoporous glasses. The absorption, fluorescent spectra and fluorescent lifetimes have been measured and the emission cross-section and minimum pump intensities were calculated. Codoping aluminum ions enhanced the fluorescence intensity of Yb-doped high silica glass obviously. The emission cross-sections of Yb-doped and Yb-Al-codoped high silica glasses were 0.65 and 0.82 pm(2), respectively. The results show that Yb-Al-codoped high silica glass has better spectroscopic properties for a laser material. The study of high silica glass doped with ytterbium is helpful for its application in Yb laser systems, especially for high-power and high-repetition lasers. (C) 2007 Elsevier B.V. All rights reserved.

Growth of excellent-quality Nd : LuVO4 single crystal and laser properties

High-quality Nd:LuVO4 single crystal was successfully grown by Czochralski method. The assessment of the crystalline quality by the chemical etching method and Conoscope image was reported. The absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of Nd: LuVO4 were measured. Laser performance was achieved with Nd:LUVO4 crystal for the transition of F-4(3/2) -> I-4(11/2) (corresponding wavelength 1065.8 nm) in an actively Q-switched operation, and the average output power reached 5.42 W at a pulse repetition frequency (PRF) of 40 kHz under pump power of 18 W, giving an optical conversion efficiency of 30.1%. The pulse energy and peak power reached 138 mu J and 16.2 kW at PRF of 25 kHz under pump power of 14.2 W, and the pulse duration was 8.5 ns. (c) 2005 Elsevier B.V. All rights reserved.

Codoping Na+ to modulate the spectroscopy and photoluminescence properties of Yb3+ in CaF2 laser crystal

kinds of Yb3+- and Na+-codoped CaF2 laser crystal with different Na:Yb ratios of 0, 1.5, and 10 are grown by the temperature gradient technique. Room-temperature absorption, photoluminescence spectra, and fluorescence lifetimes belonging to the transitions between ground state F-2(7/2) and excited state F-2(5/2) of Yb3+ ions in the three crystals are measured to study the effect of Na+. Experimental results show that codoping Na+ ions in different Na:Yb ratios can modulate the spectroscopy and photoluminescence properties of Yb3+ ions in a CaF2 lattice in a large scope. (c) 2005 Optical Society of America

Thermal, spectroscopic and laser properties of Yb3+Na+: CaF2 single crystals

The effects of Na+ doping level on the thermal conductivities, absorption and emission spectra, and fluorescence lifetimes of Yb3+ ,Na+ :CaF2 crystals were systematically studied. Sites structure, covalent force, and crystal field strength of Yb3+ :CaF2 crystals were markedly varied by codoping Na+ as charge compensator. The 2.0at% Yb3+ and 3.0at% Na+-codoped CaF2 crystal was demonstrated to operate in diode-pumped passively mode-locking scheme. Transform-limited 1 ps laser pulses were obtained, showing the crystal capable of producing ultra-short laser pulses. (c) 2006 Elsevier B.V. All rights reserved.

Growth and spectral properties of Yb : FAP single crystal

In this paper, single crystal of ytterbium (Yb) doped Ca-5(PO4)(3)F (FAP) has been grown along the c-axis by using the Czochralski method. The segregation coefficients of Yb3+ in the Yb:FAP crystal has been determined by ICP-AES method. The absorption spectrum, fluorescence spectrum and fluorescence lifetime of the Yb:FAP crystal has been also measured at room temperature. In the absorption spectra, there are two absorption bands at 904 and 982 nm, respectively, which are suitable for InGaAs diode laser pumping. The absorption cross-section (sigma(abs)) is 5.117 x 10(-20) cm(2) with an FWHM of 4 nm at 982 nm. The emission cross-section is (sigma(em)) 3.678 x 10(-20) cm(2) at 1042 nm. Favorable values of the absorption cross-section at about 982 nm are promising candidates for laser diode (LD) pumping. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectral properties of Yb,Tm:YAG crystal

The YAG crystal codoped with Yb3+ and Tm3+ has been grown by Czochralski (Cz) method. The crystal structure of the crystal has been determined by X-ray diffraction analysis. The absorption and emission spectra of Yb,Tm:YAG crystal at room temperature have also been studied. The emission cross-sections have been calculated by Fuechtbauer-Ladenburg formula and reciprocity method. (C) 2007 Elsevier B.V. All rights reserved.

Growth and annealing properties of Mg0.4Al2.4O4 crystal

Mg0.4Al2.4O4 single crystals with good optical quality were successfully grown by the Czochralski method. The transmission spectrum indicated that the absorption edge of the crystal was at 220nm, while no apparent absorption peaks were found. The X-ray diffraction and DSC curve analysis showed that Mg0.4Al2.4O4 crystal was stable at room temperature. While after annealing in the air and hydrogen atmosphere at about 1200 degrees C,Mg0.4Al2.4O4 decomposed into Al2O3 and (MgO)(0.4)(Al2O3)(x) (0.4 < x < 1.2). The reaction mainly occurred on the crystal surface, barely inside. (C) 2008 Elsevier B.V. All rights reserved.

Influences of oxygen partial pressure on structure and related properties of ZrO2 thin films prepared by electron beam evaporation deposition

ZrO2 thin films were prepared by electron beam evaporation at different oxygen partial pressures. The influences of oxygen partial pressure on structure and related properties of ZrO2 thin films were studied. Transmittance, thermal absorption, structure and residual stress of ZrO2 thin films were measured by spectrophotometer, surface thermal lensing technique (STL), X-ray diffraction and optical interferometer, respectively. The results showed that the structure and related properties varied progressively with the increase of oxygen partial pressure. The refractive indices and the packing densities of the thin films decreased when the oxygen partial pressure increased. The tetragonal phase fraction in the thin films decreased gradually as oxygen partial pressure increased. The residual stress of film deposited at base pressure was high compressive stress, the value decreased with the increase of oxygen partial pressure, and the residual stress became tensile with the further increase of oxygen pressure, which was corresponding to the evolution of packing densities and variation of interplanar distances. (c) 2007 Elsevier B.V. All rights reserved.

Composite beta-AgVO3@V5+1.6V4+0.4O4.8 hydrogels and xerogels for catalytic applications

Comunicación (Poster) en panel del congreso: Designing New Heterogeneous Catalysts, Faraday Discussion, 4–6 April 2016. London, United Kingdom.

Modeling and electrical measurement of transport AC loss in HTS-based superconducting coils for electric machines

AC loss can be a significant problem for any applications that utilize or produce an AC current or magnetic field, such as an electric machine. The authors are currently investigating the electromagnetic properties of high temperature superconductors with a particular focus on the AC loss in coils made from YBCO superconductors. In this paper, a 2D finite element model based on the H formulation is introduced. The model is then used to calculate the transport AC loss using both a bulk approximation and modeling the individual turns in a racetrack-shaped coil. The coil model is based on the superconducting stator coils used in the University of Cambridge EPEC Superconductivity Group's superconducting permanent magnet synchronous motor design. The transport AC loss of a stator coil is measured using an electrical method based on inductive compensation using a variable mutual inductance. The simulated results are compared with the experimental results, verifying the validity of the model, and ways to improve the accuracy of the model are discussed. © 2010 IEEE.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.