Evolutionary history of the mtDNA 9-bp deletion in Chinese populations and its relevance to the peopling of east and southeast Asia

In total, 1218 Chinese from twelve ethnic groups and nine Han geographic groups were screened for the mtDNA 9-bp deletion motif. The frequency of the 9-bp deletion in all samples was 14.7% but ranged from 0% to 32% in the various ethnic groups. Three individuals had a triplication of the 9-bp segment. Phylogenetic and demographic analyses of the mtDNA hypervariable segment 1 (HVS1) sequences suggest that the 9-bp deletion occurred more than once in China. The majority of the Chinese deletion:haplotypes (about 90%) have a common origin as a mutational event following an initial expansion of modem humans in eastern Asia. Other deletion haplotypes and the three haplotypes with a 9-bp triplication may have arisen independently in the Chinese, presumably by replication error. HVS1 haplotype analysis suggests two possible migration routes of the 9-bp deletion in east and southeast Asia. Both migrations originated in China with one route leading to the Pacific Islands via Taiwan, the other to southeast Asia and possibly the Nicobar Islands. Along both routes of peopling, a decrease in HVS1 diversity of the mtDNA haplotypes is observed. The "Polynesian motif (16217T/C, 16247A/G, and 16261C/T)" and the 16140T/C, 16266C/A, or C/G polymorphisms appear specific to each migration route.

Frequency of the mtDNA 9-bp deletion in Chinese ethnic groups

The 9-bp deletion in the COII/tRNA(Lys) intergenic region (region V) of human mitochondrial DNA was screened in 1521 Chinese from 16 ethnic groups and 9 Hen geographic groups. The highest frequency was found in populations of Miao (32.4%) and Bouyei (30.8

The effect of increase in the number of fishing trips on the economic efficiency of 9.82 m and 11 m fishing trawlers along Kerala coast

Cost-benefit analysis of a 9.82 m and 11 m fishing trawlers based on the number of fishing trips is presented. The number of fishing trips per year determines the profit and loss of the trawler. With the increase in the number of fishing trips, the profit also increase for both the sizes of trawlers. The minimum quantity of prawn and fish to be landed for 0-20% profit for varying number of fishing trips are worked out. The break-even for 9.82 and 11m trawlers was observed to be 185 and 210 fishing trips respectively during 1980-81.

中国9种嗜子宫线虫系统发育的初步研究

为了探讨鱼类寄生嗜子宫线虫的系统发育关系,测定了8种嗜子宫线虫的ITS rDNA(核糖体转录内间隔区核 糖核酸)序列和9种嗜子宫线虫的18S rDNA(小亚基核糖体核糖核酸)部分序列,并构建了18S rDNA序列的系统发 育树。在比较和分析ITS rDNA和18S rDNA两种分子标记对嗜子宫科线虫系统发育适用性的基础上,分析了嗜子 宫线虫的系统发育关系。结果表明:中国嗜子宫线虫是单系起源;黄颡鱼似嗜子宫线虫、赣州似嗜子宫线虫和棍头 嗜子宫线虫亲缘关系非常接近,可能是较晚形成的种;似嗜子宫线虫属可能应该被

Magnetocaloric effect and magnetic properties of Tb0.9 Sn0.1 MnO3

The magnetocaloric effect in magnetic materials is of great interest nowadays. In this article we present an investigation about the magnetic properties near the magnetic transition in a polycrystalline sample of a manganite Tb0.9 Sn0.1 MnO3. Particularly, we are interested in describing the nature of the magnetic interactions and the magnetocaloric effect in this compound. The temperature dependence of the magnetization was measured to determine the characteristics of the magnetic transition and the magnetic entropy change was calculated from magnetization curves at different temperatures. The magnetic solid is paramagnetic at high temperatures. We observe a dominant antiferromagnetic interaction below Tn =38 K for low applied magnetic fields; the presence of Sn doping in this compound decreases the Ńel temperature of the pure TbMnO3 system. A drastic increase in the magnetization as a function of temperature near the magnetic transition suggests a strong magnetocaloric effect. We found a large magnetic entropy change Δ SM (T) of about -4 J/kg K at H=3 T. We believe that the magnetic entropy change is associated with the magnetic transition and we interpret it as due to the coupling between the magnetic field and the spin ordering. This relatively large value and broad temperature interval (about 35 K) of the magnetocaloric effect make the present compound a promising candidate for magnetic refrigerators at low temperatures. © 2007 American Institute of Physics.

中国鲤科鱼类染色体组型的研究——Ⅸ.鳊亚科9种鱼和鲴亚科1种鱼的染色体组型

<正> 我们曾报道过分布于湖北省的鳊、鲴亚科鱼类的核型。本文继续报道采自四川和广东省的鳊、鲴亚科另10种鱼的核型考察结果。材料和方法四川半(歺又鱼)由于采集困难,仅分析了一尾雄鱼。其余9种鱼均分析了3—5尾,包括雌雄两种性别(表1)。染色体标本的制备采用体外短期培养肾细胞制片法(采自四川的鱼),或肾细胞直接制片法(采自广东的鱼)。根据我们实验室以前的工作,两种方法的核型分析结果基本上一致。每种鱼计数60—170个细胞确定其2n数。染色体分组按Levan氏的标准,核型分析方法和臂数计算均同以前的报道。核型图

Demonstration of multi-casting in a 1 × 9 LCOS wavelength selective switch

A multi-functional 1 × 9 wavelength selective switch based on liquid crystal on silicon (LCOS) spatial light modulator technology and anamorphic optics was tested at a channel spacing of 100 and 200 GHz, including dynamic data measurements on both single beam deflection and multi-casting to two ports. The multi-casting holograms were optimized using a modified Gerchberg-Saxton routine to design the core hologram, followed by a simulated annealing routine to reduce crosstalk at non-switched ports. The effect of clamping the magnitude of phase changes between neighboring pixels during optimization was investigated, with experimental results for multi-casting to two ports resulting in a signal insertion loss of-7.6 dB normalized to single port deflection, a uniformity of ±0.6%, and a worst case crosstalk of-19.4 dB, which can all be improved further by using a better anti-reflection coating on the LCOS SLM coverplate and other measures. © 2013 IEEE.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate. (C) 2000 American Institute of Physics. [S0021-8979(00)10213-0].