Studio delle proprieta ottiche di film di silicon oxynitrides (sion) per applicazioni fotovoltaiche

Nelle celle solari HIT (Heterojunction Intrinsic Thin layer) attualmente in circolazione il materiale maggiormente utilizzato è sicuramente il silicio, per la sua buona caratteristica di assorbimento e disponibilità in natura. Tuttavia, la struttura amorfa del silicio impiegato come emettitore, limita fortemente la conducibilità e aumenta gli effetti di degradazione legati all'esposizione alla luce. In quest'ottica, nel presente lavoro di tesi, vengono analizzati sottili layers di Silicon Oxynitride ossigenato, depositati in forma nanocristallina presso l'Università di Costanza su substrati in vetro, tramite PECVD (Plasma-Enhanced Chemical Vapor Deposition). Il materiale, che non presenta i difetti intrinseci della forma amorfa, è dal punto di vista delle proprietà fisiche fondamentali ancora poco conosciuto e rappresenta una possibile alternativa agli analoghi campioni in forma amorfa. Le misure e le analisi presentate in questa tesi, svolte presso il Dipartimento di Fisica e Astronomia di Bologna, sono finalizzate ad indagare le principali proprietà ottiche, quali l'energy gap e l'indice di rifrazione dei layers. I risultati ottenuti, espressi in funzione dei parametri di deposizione, mostrano che un aumento della concentrazione di ossigeno in fase di deposito implica un aumento lineare dell'ampiezza dell'energy gap e un calo dell'indice di rifrazione. Anche altri parametri come la potenza di deposito e il tempo di annealing sembrano giocare un ruolo importante sul valore dell'energy gap. I risultati appaiono inoltre essere in buon accordo con quanto ottenuto da studi precedenti su layers simili ma con una maggiore fase amorfa. In conclusione, la possibilità di regolare il valore dell'energy gap e l'indice di rifrazione in base ai parametri di deposizione, unita alle buone prerogative tipiche dei materiali cristallini, conferisce al materiale buone prospettive per applicazioni fotovoltaiche come emettitori in celle ad eterogiunzione o rivestimenti con proprietà antiriflettenti

Development of an X-ray spectrometric system and feasibility tests of Silicon Drift Detector for medical and space applications

The thesis work concerns X-ray spectrometry for both medical and space applications and is divided into two sections. The first section addresses an X-ray spectrometric system designed to study radiological beams and is devoted to the optimization of diagnostic procedures in medicine. A parametric semi-empirical model capable of efficiently reconstructing diagnostic X-ray spectra in 'middle power' computers was developed and tested. In addition, different silicon diode detectors were tested as real-time detectors in order to provide a real-time evaluation of the spectrum during diagnostic procedures. This project contributes to the field by presenting an improved simulation of a realistic X-ray beam emerging from a common X-ray tube with a complete and detailed spectrum that lends itself to further studies of added filtration, thus providing an optimized beam for different diagnostic applications in medicine. The second section describes the preliminary tests that have been carried out on the first version of an Application Specific Integrated Circuit (ASIC), integrated with large area position-sensitive Silicon Drift Detector (SDD) to be used on board future space missions. This technology has been developed for the ESA project: LOFT (Large Observatory for X-ray Timing), a new medium-class space mission that the European Space Agency has been assessing since February of 2011. The LOFT project was proposed as part of the Cosmic Vision Program (2015-2025).

Charge transport in amorphous organic semiconductors

Organic semiconductors with the unique combination of electronic and mechanical properties may offer cost-effective ways of realizing many electronic applications, e.g. large-area flexible displays, printed integrated circuits and plastic solar cells. In order to facilitate the rational compound design of organic semiconductors, it is essential to understand relevant physical properties e.g. charge transport. This, however, is not straightforward, since physical models operating on different time and length scales need to be combined. First, the material morphology has to be known at an atomistic scale. For this atomistic molecular dynamics simulations can be employed, provided that an atomistic force field is available. Otherwise it has to be developed based on the existing force fields and first principle calculations. However, atomistic simulations are typically limited to the nanometer length- and nanosecond time-scales. To overcome these limitations, systematic coarse-graining techniques can be used. In the first part of this thesis, it is demonstrated how a force field can be parameterized for a typical organic molecule. Then different coarse-graining approaches are introduced together with the analysis of their advantages and problems. When atomistic morphology is available, charge transport can be studied by combining the high-temperature Marcus theory with kinetic Monte Carlo simulations. The approach is applied to the hole transport in amorphous films of tris(8-hydroxyquinoline)aluminium (Alq3). First the influence of the force field parameters and the corresponding morphological changes on charge transport is studied. It is shown that the energetic disorder plays an important role for amorphous Alq3, defining charge carrier dynamics. Its spatial correlations govern the Poole-Frenkel behavior of the charge carrier mobility. It is found that hole transport is dispersive for system sizes accessible to simulations, meaning that calculated mobilities depend strongly on the system size. A method for extrapolating calculated mobilities to the infinite system size is proposed, allowing direct comparison of simulation results and time-of-flight experiments. The extracted value of the nondispersive hole mobility and its electric field dependence for amorphous Alq3 agree well with the experimental results.

Film di silicon oxinitride (sion) per applicazioni fotovoltaiche, studio di transizioni ottiche.

I materiali per applicazioni fotovoltaiche hanno destato un interesse crescente nella comunità scienti�ca negli ultimi decenni. Le celle HIT (Het- erojunction Intrinsic Thin Layer ) sono dispositivi di ultima generazione che hanno raggiunto e�cienza elevata mantenendo bassi i costi di pro- duzione, e impiegano silicio amorfo (a-Si) come strato emettitore per il suo buon assorbimento della luce e silicio cristallino come regione attiva. La struttura amorfa del silicio presenta però una bassa conducibilità, oltre ad e�etti di degradazione che limitano considerevolmente la durevolezza di una cella. Per questo motivo si stanno cercando possibili alternative al silicio amorfo, in particolare strutture multifase e composti di silicio, ossigeno ed azoto. In questo lavoro sono esposti i risultati dell'analisi di sottili lay- er di Silicon Oxynitride ossigenato (SiOx Ny :H), in forma microcristallina, deposti tramite PECVD (P lasma-Enhanced Chemical Vapor Deposition) su vetro presso l'università di Costanza. La forma microcristallina è una distribuzione di agglomerati cristallini dell'ordine di grandezza di un mi- crometro in una matrice di silicio amorfo, e attualmente le sue proprietà ottiche ed elettroniche non sono ancora state studiate in maniera appro- fondita. Nonostante ciò, è invece evidente che la fase microstallina non presenta tanti difetti intrinseci come la forma amorfa e ne è quindi una val- ida alternativa. In questa ottica, si è svolto uno studio sperimentale delle proprietà ottiche di layers in forma microcristallina di SiOx Ny :H, quali la misura del gap energetico. I risultati sperimentali, volti a trovare la dipen- denza delle caratteristiche dai parametri di deposizione dei layers, hanno mostrato una riduzione del gap energetico con la concentrazione di N2 O, uno dei gas precursori utilizzati nella deposizione dei layers in camera di processo. In conclusione si può dire che il μc−SiOx Ny :H ha le buone carat- teristiche tipiche dei semiconduttori cristallini, che unite alla possibilità di regolare il valore del gap energetico in base alle scelte in fase di deposizione, gli conferisce buone prospettive per applicazioni in celle fotovoltaiche, come emettitore in celle ad eterogiunzione.

Silicon Photonics Integrated Circuits for Flexible Optical Systems

This dissertation deals with the design and the characterization of novel reconfigurable silicon-on-insulator (SOI) devices to filter and route optical signals on-chip. Design is carried out through circuit simulations based on basic circuit elements (Building Blocks, BBs) in order to prove the feasibility of an approach allowing to move the design of Photonic Integrated Circuits (PICs) toward the system level. CMOS compatibility and large integration scale make SOI one of the most promising material to realize PICs. The concepts of generic foundry and BB based circuit simulations for the design are emerging as a solution to reduce the costs and increase the circuit complexity. To validate the BB based approach, the development of some of the most important BBs is performed first. A novel tunable coupler is also presented and it is demonstrated to be a valuable alternative to the known solutions. Two novel multi-element PICs are then analysed: a narrow linewidth single mode resonator and a passband filter with widely tunable bandwidth. Extensive circuit simulations are carried out to determine their performance, taking into account fabrication tolerances. The first PIC is based on two Grating Assisted Couplers in a ring resonator (RR) configuration. It is shown that a trade-off between performance, resonance bandwidth and device footprint has to be performed. The device could be employed to realize reconfigurable add-drop de/multiplexers. Sensitivity with respect to fabrication tolerances and spurious effects is however observed. The second PIC is based on an unbalanced Mach-Zehnder interferometer loaded with two RRs. Overall good performance and robustness to fabrication tolerances and nonlinear effects have confirmed its applicability for the realization of flexible optical systems. Simulated and measured devices behaviour is shown to be in agreement thus demonstrating the viability of a BB based approach to the design of complex PICs.

HCl gas gettering of 3d transition metals for crystalline silicon solar cell concepts

In order to reduce the costs of crystalline silicon solar cells, low-cost silicon materials like upgraded metallurgical grade (UMG) silicon are investigated for the application in the photovoltaic (PV) industry. Conventional high-purity silicon is made by cost-intensive methods, based on the so-called Siemens process, which uses the reaction to form chlorosilanes and subsequent several distillation steps before the deposition of high-purity silicon on slim high-purity silicon rods. UMG silicon in contrast is gained from metallurgical silicon by a rather inexpensive physicochemical purification (e.g., acid leaching and/or segregation). However, this type of silicon usually contains much higher concentrations of impurities, especially 3d transition metals like Ti, Fe, and Cu. These metals are extremely detrimental in the electrically active part of silicon solar cells, as they form recombination centers for charge carriers in the silicon band gap. This is why simple purification techniques like gettering, which can be applied between or during solar cell process steps, will play an important role for such low-cost silicon materials. Gettering in general describes a process, whereby impurities are moved to a place or turned into a state, where they are less detrimental to the solar cell. Hydrogen chloride (HCl) gas gettering in particular is a promising simple and cheap gettering technique, which is based on the reaction of HCl gas with transition metals to form volatile metal chloride species at high temperatures.rnThe aim of this thesis was to find the optimum process parameters for HCl gas gettering of 3d transition metals in low-cost silicon to improve the cell efficiency of solar cells for two different cell concepts, the standard wafer cell concept and the epitaxial wafer equivalent (EpiWE) cell concept. Whereas the former is based on a wafer which is the electrically active part of the solar cell, the latter uses an electrically inactive low-cost silicon substrate with an active layer of epitaxially grown silicon on top. Low-cost silicon materials with different impurity grades were used for HCl gas gettering experiments with the variation of process parameters like the temperature, the gettering time, and the HCl gas concentration. Subsequently, the multicrystalline silicon neighboring wafers with and without gettering were compared by element analysis techniques like neutron activation analysis (NAA). It was demonstrated that HCl gas gettering is an effective purification technique for silicon wafers, which is able to reduce some 3d transition metal concentrations by over 90%. Solar cells were processed for both concepts which could demonstrate a significant increase of the solar cell efficiency by HCl gas gettering. The efficiency of EpiWE cells could be increased by HCl gas gettering by approximately 25% relative to cells without gettering. First process simulations were performed based on a simple model for HCl gas gettering processes, which could be used to make qualitative predictions.

Development of synthetic methods of silicon nanocrystals functionalized with photoactive molecules

The thesis is focused on the development of a method for the synthesis of silicon nanocrystals with different sizes, narrow size distribution, good optical properties and stability in air. The resulting silicon nanocrystals have been covalently functionalized with different chromophores with the aim to exploit the new electronic and chemical properties that emerge from the interaction between silicon nanocrystal surface and ligands. The purpose is to use these chromophores as light harvesting antennae, increasing the optical absorption of silicon nanocrystals. Functionalized silicon nanocrystals have been characterized with different analytical techniques leading to a good knowledge of optical properties of semiconductor quantum dots.

Characterization of integrated Bragg gratings in silicon-on-insulator

Silicon-on-insulator (SOI) is rapidly emerging as a very promising material platform for integrated photonics. As it combines the potential for optoelectronic integration with the low-cost and large volume manufacturing capabilities and they are already accumulate a huge amount of applications in areas like sensing, quantum optics, optical telecommunications and metrology. One of the main limitations of current technology is that waveguide propagation losses are still much higher than in standard glass-based platform because of many reasons such as bends, surface roughness and the very strong optical confinement provided by SOI. Such high loss prevents the fabrication of efficient optical resonators and complex devices severely limiting the current potential of the SOI platform. The project in the first part deals with the simple waveguides loss problem and trying to link that with the polarization problem and the loss based on Fabry-Perot Technique. The second part of the thesis deals with the Bragg Grating characterization from again the point of view of the polarization effect which leads to a better stop-band use filters. To a better comprehension a brief review on the basics of the SOI and the integrated Bragg grating ends up with the fabrication techniques and some of its applications will be presented in both parts, until the end of both the third and the fourth chapters to some results which hopefully make its precedent explanations easier to deal with.

Morphological and optical properties of SiON thin films for photovoltaic applications

In the last years technologies related to photovoltaic energy have rapidly developed and the interest on renewable energy power source substantially increased. In particular, cost reduction and appropriate feed-in tariff contributed to the increase of photovoltaic installation, especially in Germany and Italy. However, for several technologies, the observed experimental efficiency of solar cells is still far from the theoretical maximum efficiency, and thus there is still room for improvement. In this framework the research and development of new materials and new solar devices is mandatory. In this thesis the morphological and optical properties of thin films of nanocrystalline silicon oxynitride (nc-SiON) have been investigated. This material has been studied in view of its application in Si based heterojunction solar cells (HIT). Actually, a-Si:H is used now in these cells as emitter layer. Amorphous SiO_x N_y has already shown excellent properties, such as: electrical conductivity, optical energy gap and transmittance higher than the ones of a-Si:H. Nc-SiO_x N_y has never been investigated up to now, but its properties can surpass the ones of amorphous SiON. The films of nc-SiON have been deposited at the University of Konstanz (Germany). The properties of these films have been studied using of atomic force microscopy and optical spectroscopy methods. This material is highly complex as it is made by different coexisting phases. The main purpose of this thesis is the development of methods for the analyses of morphological and optical properties of nc-SiON and the study of the reliability of those methods to the measurement of the characteristics of these silicon films. The collected data will be used to understand the evolution of the properties of nc-SiON, as a function of the deposition parameters. The results here obtained show that nc-SiON films have better properties with respect to both a-Si:H and a-SiON, i. e. higher optical band-gap and transmittance. In addition, the analysis of the variation of the observed properties as a function of the deposition parameters allows for the optimization of deposition conditions for obtaining optimal efficiency of a HIT cell with SiON layer.

Looking for silicene: studies of silicon deposition on metallic and semiconductor substrates

Nel presente lavoro espongo i risultati degli esperimenti svolti durante la mia internship all’Institut des NanoSciences de Paris (INSP), presso l’Università Pierre et Marie Curie (Paris VI), nel team "Phisico-Chimie et Dynamique des Surfaces", sotto la supervisione del Dott. Geoffroy Prévot. L’elaborato è stato redatto e in- tegrato sotto la guida del Dott. Pasquini, del dipartimento di Fisica e Astronomia dell’Università di Bologna. La tesi s’inserisce nel campo di ricerca del silicene, i.e. l’allotropo bidimensionale del silicio. Il cosidetto free-standing silicene è stato predetto teoricamente nel 2009 utilizzando calcoli di Density Functional Theory, e da allora ha stimolato un’intensa ricerca per la sua realizzazione sperimentale. La sua struttura elettronica lo rende particolarmente adatto per eventuali appli- cazioni tecnologiche e sperimentali, mentre lo studio delle sue proprietà è di grande interesse per la scienza di base. Nel capitolo 1 presento innanzitutto la struttura del silicene e le proprietà previste dagli studi pubblicati nella letteratura scientifica. In seguito espongo alcuni dei risultati sperimentali ottenuti negli ultimi anni, in quanto utili per un paragone con i risultati ottenuti durante l’internship. Nel capitolo 2 presento le tecniche sperimentali che ho utilizzato per effettuare le misure. Molto tempo è stato investito per ottenere una certa dimistichezza con gli apparati in modo da svolgere gli esperimenti in maniera autonoma. Il capitolo 3 è dedicato alla discussione e analisi dei risultati delle misure, che sono presentati in relazione ad alcune considerazioni esposte nel primo capitolo. Infine le conclusioni riassumono brevemente quanto ottenuto dall’analisi dati. A partire da queste considerazioni propongo alcuni esperimenti che potrebbero ulteriormente contribuire alla ricerca del silicene. I risultati ottenuti su Ag(111) sono contenuti in un articolo accettato da Physical Review B.

Efficiency limits for silicon/perovskite tandem solar cells: a theoretical model

The primary goal of this work is related to the extension of an analytic electro-optical model. It will be used to describe single-junction crystalline silicon solar cells and a silicon/perovskite tandem solar cell in the presence of light-trapping in order to calculate efficiency limits for such a device. In particular, our tandem system is composed by crystalline silicon and a perovskite structure material: metilammoniumleadtriiodide (MALI). Perovskite are among the most convenient materials for photovoltaics thanks to their reduced cost and increasing efficiencies. Solar cell efficiencies of devices using these materials increased from 3.8% in 2009 to a certified 20.1% in 2014 making this the fastest-advancing solar technology to date. Moreover, texturization increases the amount of light which can be absorbed through an active layer. Using Green’s formalism it is possible to calculate the photogeneration rate of a single-layer structure with Lambertian light trapping analytically. In this work we go further: we study the optical coupling between the two cells in our tandem system in order to calculate the photogeneration rate of the whole structure. We also model the electronic part of such a device by considering the perovskite top cell as an ideal diode and solving the drift-diffusion equation with appropriate boundary conditions for the silicon bottom cell. We have a four terminal structure, so our tandem system is totally unconstrained. Then we calculate the efficiency limits of our tandem including several recombination mechanisms such as Auger, SRH and surface recombination. We focus also on the dependence of the results on the band gap of the perovskite and we calculare an optimal band gap to optimize the tandem efficiency. The whole work has been continuously supported by a numerical validation of out analytic model against Silvaco ATLAS which solves drift-diffusion equations using a finite elements method. Our goal is to develop a simpler and cheaper, but accurate model to study such devices.

One-Step (18)F-Labeling of Carbohydrate-Conjugated Octreotate-Derivatives Containing a Silicon-Fluoride-Acceptor (SiFA): In Vitro and in Vivo Evaluation as Tumor Imaging Agents for Positron Emission Tomography (PET)

The synthesis, radiolabeling, and initial evaluation of new silicon-fluoride acceptor (SiFA) derivatized octreotate derivatives is reported. So far, the main drawback of the SiFA technology for the synthesis of PET-radiotracers is the high lipophilicity of the resulting radiopharmaceutical. Consequently, we synthesized new SiFA-octreotate analogues derivatized with Fmoc-NH-PEG-COOH, Fmoc-Asn(Ac?AcNH-?-Glc)-OH, and SiFA-aldehyde (SIFA-A). The substances could be labeled in high yields (38 ± 4%) and specific activities between 29 and 56 GBq/?mol in short synthesis times of less than 30 min (e.o.b.). The in vitro evaluation of the synthesized conjugates displayed a sst2 receptor affinity (IC?? = 3.3 ± 0.3 nM) comparable to that of somatostatin-28. As a measure of lipophilicity of the conjugates, the log P(ow) was determined and found to be 0.96 for SiFA-Asn(AcNH-?-Glc)-PEG-Tyr³-octreotate and 1.23 for SiFA-Asn(AcNH-?-Glc)-Tyr³-octreotate, which is considerably lower than for SiFA-Tyr³-octreotate (log P(ow) = 1.59). The initial in vivo evaluation of [¹?F]SiFA-Asn(AcNH-?-Glc)-PEG-Tyr³-octreotate revealed a significant uptake of radiotracer in the tumor tissue of AR42J tumor-bearing nude mice of 7.7% ID/g tissue weight. These results show that the high lipophilicity of the SiFA moiety can be compensated by applying hydrophilic moieties. Using this approach, a tumor-affine SiFA-containing peptide could successfully be used for receptor imaging for the first time in this proof of concept study.