Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures

The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si(100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p-Si(100) substrates. These dots were found to be single crystalline and grown along 001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be Delta E-C=1.8 eV and Delta E-V=1.3 eV and are in close agreement with Anderson's model. (C) 2010 American Institute of Physics. doi:10.1063/1.3517489]

Performance study of a pressure transducer with meandering-path thin film strain gauges

The performance of a pressure transducer with meandering-path thin film strain gauges has been studied. Details of the procedure followed to prepare the thin film strain gauge system on the pressure transducer diaphragm are given. The effect of post-deposition heat treatment on the resistance of the sensing films of the strain gauges and the insulating base layers are discussed. The output of the pressure transducer was studied with various input pressures and excitation voltages. It was found that up to a maximum of 10 V bridge excitation the output was stable and repetitive. The maximum non-linearity and hysteresis observed are ±0.15%, ±0.16% and ±0.14% FSO (full-scale output) for 5, 7.5 and 10 V excitation respectively. Information on the output behaviour of the pressure transducer with temperature is also included.

An Investigation Of Alkali Aluminosilicate Glasses By Si-29 And Al-27 Magic-Angle-Spinning Nmr-Spectroscopy

Alkali aluminosilicate glasses prepared by the gel and the melt routes have been investigated by Si-29 and Al-27 MAS NMR spectroscopy. It is found that Al has a tetrahedral coordination in the gel glasses modified with equivalent proportions of alkalis unlike in a pure aluminosilicate glass where Al has both four and six coordinations. Silicon is present as Q4 units in all the 5M2O 5Al2O3 9OSiO2 ( M = Li, Na and K) gel glasses studied whereas it is present in Q2 or Q3 species in the lithium aluminosilicate glasses of compositions 40Li2O x Al2O3 (1-x)SiO2 (1 less-than-or-equal-to x less-than-or-equal-to 15) and xLi2O 10Al2O3 (1-x)SiO2 (20 less-than-or-equal-to x less-than-or-equal-to 40). The combination of Q2 and Q3 is also found in certain sodium aluminosilicate glasses, but they change to Q2 and Q1 as the concentration of SiO2 decreases.

Continuous ordering below the tricritical point: A critical test for the kinetic pathway in Fe-12at.% Si alloy

A critical test has been presented to establish the nature of the kinetic pathways for the decomposition of Fe-12 at.% Si alloy below the metastable tricritical point. The results, based on the measurements of saturation magnetization, establish that a congruent ordering from B2 --> D0(3) precedes the development of a B2 + D0(3) two-phase field, consistent with the predictions in 1976 of Allen and Cahn.

Differential Scanning Calorimetry Of Si-As-Te Glasses

Differential scanning calorimetry (DSC) can be used for obtaining various non-isothermal properties of glassy materials. The thermal properties of the Si-As-Te glass system are discussed in relation to the interesting information obtained on the local ordering in these glasses.

Anomalous behaviour in the composition dependence of the photoacoustic properties of Si---As---Te glasses

The optical bandgap and thermal diffusivity of Si10AsxTe90−x (10 ≤ x ≤ 50) and Si15AsxTe85−x (5 ≤ x ≤ 40) glasses have been measured using the photoacoustic technique. The anomalous behaviour observed in these properties at the mean coordination number left angle bracketrright-pointing angle bracket = 2.60 is interpreted by reference to the formation and development of a layered structure in these glasses.

A novel laser direct write technique for fabrication of thin film MICs

A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included

Effect of Substrate and Annealing Temperatures on Mechanical Properties of Ti-rich NiTi Films

The effect of substrate and annealing temperatures on mechanical properties of Ti-rich NiTi films deposited on Si (100) substrates by DC magnetron sputtering was studied by nanoindentation. NiTi films were deposited at two substrate temperatures viz. 300 and 400 degrees C. NiTi films deposited at 300 degrees C were annealed for 4 h at four different temperatures, i.e. 300, 400, 500 and 600 degrees C whereas films deposited at 400 degrees C were annealed for 4 h at three different temperatures, i.e. 400, 500 and 600 degrees C. The elastic modulus and hardness of the films were found to be the same in the as-deposited as well as annealed conditions for both substrate temperatures. For a given substrate temperature, the hardness and elastic modulus were found to remain unchanged as long as the films were amorphous. However, both elastic modulus and hardness showed an increase with increasing annealing temperature as the films become crystalline. The results were explained on the basis of the change in microstructure of the film with change in annealing temperature.

Diaphragm-type sputtered platinum thin film strain gauge pressure transducer

A diaphragm-type pressure transducer with a sputtered platinum film strain gauge (sensing film) has been designed and fabricated. The various steps followed to prepare thin film strain gauges on the diaphragm are described. M-bond 450 adhesive (Measurements Group, USA) has been employed as the insulating layer. A detailed procedure to cure this layer is given. A d.c. sputtering method is employed to prepare the platinum films. This paper also includes details of the strain gauge pattern and its location on the diaphragm. A description of the output characteristics and overall behaviour of the platinum thin film pressure transducer is reported.

Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.

Microwave Irradiation Assisted Method for the Rapid Synthesis of fine Particles of alpha Al2O3 And alpha (Al1-XCrx)(2)O-3 And Their Coatings on Si(100)

Chromium substituted beta diketonate complexes of aluminium have been synthesized and employed as precursors for a novel soft chemistry process wherein microwave irradiation of a solution of the complex yields within minutes well crystallized needles of alpha (Al1 XCrx)(2)O-3 measuring 20 30 nm in diameter and 50 nm long By varying the microwave irradiation parameters and using a surfactant such as polyvinyl pyrrolidone the crystallite size and shape can be controlled and their agglomeration prevented These microstructural parameters as well as the polymorph of the Cr substituted Al2O3 formed may also be controlled by employing a different complex Samples of alpha (Al1 XCrx)(2)O-3 have been characterized by XRD FTIR and TEM The technique results in material of homogeneous metal composition, as shown by EDAX and can be adjusted as desired The technique has been extended to obtain coatings of alpha (Al1 XCrx)(2)O-3 on Si(100)

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.