Unified circuit model for the polysilicon TFT

This paper proposes two methods to improve the modelling of thin film transistors (TFTs). The first involves integrating Poissons equation numerically, given a density of trap states and other relevant material parameters including a constant mobility. Theresult is conductance as a numerical function of gate voltage. The second method recognizes that the data for areal conductance found by numerical integration, may easily be found by measurement without making assumptions about the density of trap states.

A unified circuit model for the polysilicon thin film transistor

This paper describes a unified approach to modelling the polysilicon thin film transistor (TFT) for the purposes of circuit design. The approach uses accurate methods of predicting the channel conductance and then fitting the resulting data with a polynomial. Two methods are proposed to find the channel conductance: a device model and measurement. The approach is suitable because the TFT does not have a well defined threshold voltage. The polynomial conductance is then integrated generally to find the drain current and channel charge, necessary for a complete circuit model. © 1991 The Japan Society of Applied Physics.

Mechanism of polarization pinning in vertical cavity surface emitting lasers using focused ion beam etching

Photoluminescence experiments have identified strain as the origin for polarization pinning in vertical cavity surface emitting lasers post-processed by focused ion beam etching. Theoretical models were applied to deduce the strain in devices. Post-annealing was used to optimize polarization pinning.

The transition mechanism of highly-loaded LP turbine blades

A detailed experimental investigation was conducted into the interaction of a converted wake and a separation bubble on the rear suction surface of a highly loaded low-pressure (LP) turbine blade. Boundary layer measurements, made with 2D LDA, revealed a new transition mechanism resulting from this interaction. Prior to the arrival of the wake, the boundary layer profiles in the separation region are inflexional. The perturbation of the separated shear layer caused by the converting wake causes an inviscid Kelvin-Helmholtz rollup of the shear layer. This results in the breakdown of the laminar shear layer and a rapid wake-induced transition in the separated shear layer.