Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs

The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through the use of a thin (~ 5 nm) GaAsSb(N) capping layer. In the case of GaAsSb-capped QDs, cross-sectional scanning tunnelling microscopy measurements show that the QD height can be controllably tuned through the Sb content up to ~ 14 % Sb. The increased QD height (together with the reduced strain) gives rise to a strong red shift and a large enhancement of the photoluminescence (PL) characteristics. This is due to improved carrier confinement and reduced sensitivity of the excitonic bandgap to QD size fluctuations within the ensemble. Moreover, the PL degradation with temperature is strongly reduced in the presence of Sb. Despite this, emission in the 1.5 !lm region with these structures is only achieved for high Sb contents and a type-II band alignment that degrades the PL. Adding small amounts of N to the GaAsSb capping layer allows to progressively reduce the QD-barrier conduction band offset. This different strategy to red shift the PL allows reaching 1.5 !lm with moderate Sb contents, keeping therefore a type-I alignment. Nevertheless, the PL emission is progressively degraded when the N content in the capping layer is increased

Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIPs

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.

Processing and adsorption control in ZnO single nanowire photodetectors

ZnO single nanowire photodetectors have been measured in different ambient conditions in order to understand and control adsorption processes on the surface. A decrease in the conductivity has been observed as a function of time when the nanowires are exposed to air, due to adsorbed O2/H2O species at the nanowire surface. In order to have a device with stable characteristics in time, thermal desorption has been used to recover the original conductivity followed by PMMA coating of the exposed nanowire surface.

Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots

Diluted nitride self-assembled In(Ga)AsN quantum dots (QDs) grown on GaAs substrates are potential candidates to emit in the windows of maximum transmittance for optical fibres (1.3-1.55 μm). In this paper, we analyse the effect of nitrogen addition on the indium desorption occurring during the capping process of InxGa1−xAs QDs (x = l and 0.7). The samples have been grown by molecular beam epitaxy and studied through transmission electron microscopy (TEM) and photoluminescence techniques. The composition distribution inside the dots was determined by statistical moiré analysis and measured by energy dispersive X-ray spectroscopy. First, the addition of nitrogen in In(Ga)As QDs gave rise to a strong redshift in the emission peak, together with a large loss of intensity and monochromaticity. Moreover, these samples showed changes in the QDs morphology as well as an increase in the density of defects. The statistical compositional analysis displayed a normal distribution in InAs QDs with an average In content of 0.7. Nevertheless, the addition of Ga and/or N leads to a bimodal distribution of the Indium content with two separated QD populations. We suggest that the nitrogen incorporation enhances the indium fixation inside the QDs where the indium/gallium ratio plays an important role in this process. The strong redshift observed in the PL should be explained not only by the N incorporation but also by the higher In content inside the QDs

Manuales técnicos para la elaboración de huertos de patio sostenible y transformación de la producción en San Jose de Cusmapa (Nicaragua)

El proyecto ha sido realizado dentro del Programa de Proyectos Fin de Carrera para el Desarrollo (PFCD), correspondiente a la IV Convocatoria. Se realizó en el marco del proyecto financiado por la Universidad Politécnica de Madrid,“Reducción de la vulnerabilidad alimentaria de las familias rurales de San José de Cusmapa”. Con el título de “Manuales técnicos para la elaboración dehuertos de patio sostenibles y trasformación de la producción”, elproyecto está formado por tres documentos, la memoria y sus anejos, presupuesto y manuales técnicos diseñados. Este proyecto no sólo tiene el carácter académico de Proyecto Fin de Carrera, sino también, educativo y humano. Es una herramienta para el desarrollo humano, que mediante la educación agronómica (uno de los objetivos específicos), trata de mejorar los índices de desarrollo (objetivo general). Durante el periodo de nueve meses(octubre 2010 a junio 2011) se realizó el trabajo de campo, mediante la recogida de información, aprendizaje de técnicas, ensayos, y otras experiencias vividas. Con los objetivos y el análisis de la situación actual se realizaron tres manuales técnicos, resultado final del proyecto. El primero,recoge las técnicas de elaboración de un huerto y los cultivos que se pueden sembrar. El segundo, está centrado en el control y prevención de plagas y enfermedades. El tercero se divide en dos bloques, el primero de conservación y trasformación de alimentos, de forma casera, y el segundo bloque la importancia de la dieta y la nutrición. Los manuales han sido diseñados para que estén al alcance de las personas que lo necesiten y de las cuales, muchas de ellas, han colaborado en su realización. El compromiso no solo es académico, sino también humano y emocional. El trabajo diario, los ensayos,los errores y aciertos, la convivencia con los beneficiarios y el aprendizaje continuo, me han permitido obtener una educación profesional y social, ayudándome a desarrollarme como persona.

Fundamentos antropológicos de las tecnologías biomédicas no terapéuticas

The important developments in technology in all areas of human life have generated high expectations and hopes with regard to the health sector. Science and technology have favored the development of incredible therapeutic treatments to help resolve numerous problems relating to illness and disability. Nonetheless, many developments in the therapeutic realm have given rise to discussions over the possibility of whether this same scientific and technological progress could be beneficial even for those who may not be sick. One may ask: why not apply the same knowledge and technology used for treatment of illness for conditions where therapy is not necessary, but there is a desire to care for, improve and enhance human person? These new horizons offered by biomedical technologies undoubtedly express a deep desire of every person for health, happiness, and a long life. In order to offer a response to these questions, current biomedical technologies and those in development offer a wide range of possibilities. Therefore, in this investigation we attempt to identify and define four areas of non-therapeutic treatment: illness prevention, health promotion, improving human nature, and human enhancement. These four areas, which do not directly regard illness, give rise to a series of questions, which range from those regarding the meaning of health and illness to those concerning anthropological questions, such as situations and conditions that must be taken into account so human dignity is respected. The treatment, improvement and enhancement of the human being imply clarifying in scientific and technological terms the truth and meaning of the human person as such. This research identifies and looks at the relationship between the four anthropological cornerstones which non-therapeutic biomedical technologies should be based upon so as not to impact or violate the dignity of the human person. This research presents the anthropological boundaries which non-therapeutic biomedical technologies should take into consideration so as not to alter or violate the dignity of the human person. At the same time, the research proposes an anthropological foundation on which to build a code of ethics for non-therapeutic biomedical technologies. El gran desarrollo de las tecnologías en todos los ámbitos de la vida del hombre ha generado una gran expectativa y esperanza en lo que se refiere a la salud. Ciencia y técnica están aportando grandes beneficios en materia terapéutica, ayudando a resolver muchos problemas concernientes a la enfermedad y a la discapacidad. Pero este desarrollo que se ha producido en el ámbito terapéutico nos conduce a la formulación de preguntas sobre las posibilidades que esos avances técnico-científicos pueden aportar en beneficio del hombre, cuando no se encuentra enfermo: ¿por qué no pueden aplicarse los conocimientos y tecnologías usados en terapia a un ámbito diferente, no terapéutico, con el fin de mantener, mejorar o incluso potenciar al hombre? Ciertamente los nuevos horizontes que abren las Tecnologías Biomédicas encuentran repercusión en el deseo de bienestar, de felicidad e incluso de prolongación de la vida presente en todos los hombres. Para responder a esta pregunta las Tecnologías Biomédicas han desarrollado y están desarrollando una gama muy amplia de posibilidades. En este trabajo intentamos organizar en cuatro áreas los conceptos de los tratamientos no-terapéuticos: prevención de la enfermedad, promoción de la salud, mejoramiento de la naturaleza humana y potenciación del hombre. Estas cuatro áreas, que no se refieren directamente a la enfermedad, generan una serie de interrogantes que van desde las preguntas sobre el significado de salud y enfermedad, hasta las cuestiones antropológicas relativas a la posibilidad y las condiciones que se han de dar para que tales acciones respeten la dignidad humana. Cuidar, mejorar y potenciar al hombre implica que los objetivos de la ciencia y de la técnica mantengan siempre claros los valores y la realidad del hombre en cuanto tal. ... Este Trabajo de Investigación presenta los límites antropológicos dentro de los cuales deben moverse las Tecnologías Biomédicas no-terapéuticas para no alterar el ser ni menoscabar la dignidad del hombre. Y ofrece los fundamentos antropológicos sobre los cuales se pueda construir un código ético y deontológico para las Tecnologías Biomédicas no-terapéuticas.

Self-assembled MgxZn1−xO quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a phase transition from hexagonal to a cubic structure which resulted in the growth of hexagonal and cubic phases of MgxZn1−xO in the intermediate range of Mg concentrations 50 to 85% (0.39 ≤ x ≤ 0.77), whereas higher nominal concentration of Mg ≥ 90% (0.81 ≤ x ≤ 1) leads to the growth of single phase cubic MgxZn1−xO quantum dots. High resolution transmission electron microscopy and fast Fourier transform confirm the results and show clearly distinguishable hexagonal and cubic crystal structures of the respective quantum dots. A difference of 0.24 eV was detected between the core levels (Zn 2p and Mg 1s) measured in quantum dots with hexagonal and cubic structures by X-ray photoemission. The shift of these core levels can be explained in the frame of the different coordination of cations in the hexagonal and cubic configurations. Finally, the optical absorption measurements performed on single phase hexagonal MgxZn1−xO QDs exhibited a clear shift in optical energy gap on increasing the Mg concentration from 0 to 40%, which is explained as an effect of substitution of Zn2+ by Mg2+ in the ZnO lattice.

Manual de confessores y penitentes, que contiene quasi todas las dudas que en las confessiones suelen ocurrir, de los pecados ... : con cinco comentarios de vsuras, cambios, symonia mental, defension del proximo, de hurto notable, [et] irregularidad /compuesto por el Doctor Martin de Azpilcueta nauarro ... ; con su reportorio copiosissimo

Colofón en 3D8r y en L5v de la segunda secuencia

Manual de confessores y penitentes, que contiene quasi todas las dudas que en las confessiones suelen ocurrir, de los pecados ... : con cinco comentarios de vsuras, cambios, symonia mental, defension del proximo, de hurto notable, [et] irregularidad /compuesto por el Doctor Martin de Azpilcueta nauarro ... ; con su reportorio copiosissimo

Colofón en 3D8r y en L5v de la segunda secuencia

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure.

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy and used as input parameters in an 8 × 8 k·p model. As the Sb content is increased, there are two competing effects determining carrier confinement and the oscillator strength: the increased QD height and reduced strain on one side and the reduced QD-capping layer valence band offset on the other. Nevertheless, the observed evolution of the photoluminescence (PL) intensity with Sb cannot be explained in terms of the oscillator strength between ground states, which decreases dramatically for Sb > 16%, where the band alignment becomes type II with the hole wavefunction localized outside the QD in the capping layer. Contrary to this behaviour, the PL intensity in the type II QDs is similar (at 15 K) or even larger (at room temperature) than in the type I Sb-free reference QDs. This indicates that the PL efficiency is dominated by carrier dynamics, which is altered by the presence of the GaAsSb capping layer. In particular, the presence of Sb leads to an enhanced PL thermal stability. From the comparison between the activation energies for thermal quenching of the PL and the modelled band structure, the main carrier escape mechanisms are suggested. In standard GaAs-capped QDs, escape of both electrons and holes to the GaAs barrier is the main PL quenching mechanism. For small-moderate Sb (<16%) for which the type I band alignment is kept, electrons escape to the GaAs barrier and holes escape to the GaAsSb capping layer, where redistribution and retraping processes can take place. For Sb contents above 16% (type-II region), holes remain in the GaAsSb layer and the escape of electrons from the QD to the GaAs barrier is most likely the dominant PL quenching mechanism. This means that electrons and holes behave dynamically as uncorrelated pairs in both the type-I and type-II structures.

HF spectrum activity prediction model based on HMM for cognitive radio applications

Although most of the research on Cognitive Radio is focused on communication bands above the HF upper limit (30 MHz), Cognitive Radio principles can also be applied to HF communications to make use of the extremely scarce spectrum more efficiently. In this work we consider legacy users as primary users since these users transmit without resorting to any smart procedure, and our stations using the HFDVL (HF Data+Voice Link) architecture as secondary users. Our goal is to enhance an efficient use of the HF band by detecting the presence of uncoordinated primary users and avoiding collisions with them while transmitting in different HF channels using our broad-band HF transceiver. A model of the primary user activity dynamics in the HF band is developed in this work to make short-term predictions of the sojourn time of a primary user in the band and avoid collisions. It is based on Hidden Markov Models (HMM) which are a powerful tool for modelling stochastic random processes and are trained with real measurements of the 14 MHz band. By using the proposed HMM based model, the prediction model achieves an average 10.3% prediction error rate with one minute-long channel knowledge but it can be reduced when this knowledge is extended: with the previous 8 min knowledge, an average 5.8% prediction error rate is achieved. These results suggest that the resulting activity model for the HF band could actually be used to predict primary users activity and included in a future HF cognitive radio based station.