Influence of Inclination Angle and Machining Direction on Friction and Transfer Layer Formation

In the present investigation, unidirectional grinding marks were created on a set of steel plates. Sliding experiments were then conducted with the prepared steel plates using Al-Mg alloy pins and an inclined pin-on-plate sliding tester. The goals of the experiments were to ascertain the influence of inclination angle and grinding mark direction on friction and transfer layer formation during sliding contact. The inclination angle of the plate was held at 0.2 deg, 0.6 deg, 1 deg, 1.4 deg, 1.8 deg, 2.2 deg, and 2.6 deg in the tests. The pins were slid both perpendicular and parallel to the grinding marks direction. The experiments were conducted under both dry and lubricated conditions on each plate in an ambient environment. Results showed that the coefficient of friction and the formation of transfer layer depend on the grinding marks direction and inclination angle of the hard surfaces. For a given inclination angle, under both dry and lubricated conditions, the coefficient of friction and transfer layer formation were found to be greater when the pins slid perpendicular to the unidirectional grinding marks than when the pins slid parallel to the grinding marks. In addition, a stick-slip phenomenon was observed under lubricated conditions at the highest inclination angle for sliding perpendicular to the grinding marks direction. This phenomenon could be attributed to the extent of plane strain conditions taking place at the asperity level during sliding. DOI: 10.1115/1.4002604]

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.

Toward Effective Scalar Hardware for Highly Vectorizable Applications

The performance of a program will ultimately be limited by its serial (scalar) portion, as pointed out by Amdahl′s Law. Reported studies thus far of instruction-level parallelism have mixed data-parallel program portions with scalar program portions, often leading to contradictory and controversial results. We report an instruction-level behavioral characterization of scalar code containing minimal data-parallelism, extracted from highly vectorized programs of the PERFECT benchmark suite running on a Cray Y-MP system. We classify scalar basic blocks according to their instruction mix, characterize the data dependencies seen in each class, and, as a first step, measure the maximum intrablock instruction-level parallelism available. We observe skewed rather than balanced instruction distributions in scalar code and in individual basic block classes of scalar code; nonuniform distribution of parallelism across instruction classes; and, as expected, limited available intrablock parallelism. We identify frequently occurring data-dependence patterns and discuss new instructions to reduce latency. Toward effective scalar hardware, we study latency-pipelining trade-offs and restricted multiple instruction issue mechanisms.

Interfacial shear rheology of highly confined glassy polymers

We present results on interfacial shear rheology measurements on Langmuir monolayers of two different polymers, poly(vinyl acetate) and poly(methyl methacrylate) as a function of surface concentration and temperature. While for the high glass transition poly(methyl methacrylate) polymer we find a systematic transition from a viscous dominated regime to an elastic dominated regime as surface concentration is increased, monolayers of the low glass transition polymer, poly(vinyl acetate), remain viscous even at very high surface concentrations. We further interpret the results in terms of the soft glassy rheology model of Sollich et al. P. Sollich, F. C. Lequeux, P. Hebraud and M. E. Cates, Phys. Rev. Lett., 1997, 78, 2020-2023] and provide evidence of possible reduction in glass transition temperatures in both poly(methyl methacrylate) and poly(vinyl acetate) monolayers due to finite size effects.

Highly dispersed ultrafine Pt and PtRu nanoparticles on graphene: formation mechanism and electrocatalytic activity

We demonstrate a robust strategy for obtaining a high dispersion of ultrafine Pt and PtRu nanoparticles on graphene by exploiting the nucleation of a metal precursor phase on graphite oxide surfaces. Our method opens up new possibilities to engineer graphene-based hybrids for applications in multifunctional nanoscale devices.

Pulsed laser deposition film of a donor-acceptor-donor polymer as possible active layer in devices

A molecule having a ketone group between two thiophene groups was synthesized. Presence of alternating electron donating and accepting moieties gives this material a donor-acceptor-donor (DAD) architecture. PolyDAD was synthesized from DAD monomer by oxidative polymerization. Device quality films of polyDAD were fabricated using pulsed laser deposition technique. X-ray photoelectron spectroscopy (XPS) and fourier transform infrared spectra (FTIR) data of both as synthesized and film indicate the material does not degrade during ablation. Optical band gap was determined to be about 1.45 eV. Four orders of magnitude increase in conductivity was observed from as synthesized to pulsed laser deposition (PLD) fabricated film of polyDAD. Annealing of polyDAD films increase conductivity, indicating better ordering of the molecules upon heating. Rectifying devices were fabricated from polyDAD, and preliminary results are discussed.

3-Dimensional laminar boundary-layer in a constant-pressure diverging

larity solution is obtained for laminar 3D constant pressure flow with lateral streamline divergence. The similarity solution is shown to reduce to a Blasius solution for 2D flow over a flat plate. Measurements of velocity profiles are made to compare the similarity solution and are found to be in excellent agreement with the prediction

A note on the slow rotation of a disc in a bounded fluid with a surfactant surface layer

A method involving eigenfunction expansion and collocation is employed to solve the axisymmetric problem of a slowly and steadily rotating circular disc in a fluid of finite extent whose surface is covered with a surfactant film. The present method (originally described by Wang (Acta Mech. 94, 97, 1992)) is observed to produce results of practical importance associated with the problem more quickly and more easily than the one used earlier by Shail and Gooden (Int. J. Multiphase Flow 7, 245, 1992). (C) 1994 Academic Press, Inc.

Electrochemical preparation of few layer-graphene nanosheets via reduction of oriented exfoliated graphene oxide thin films in acetamide-urea-ammonium nitrate melt under ambient conditions

Electrochemical reduction of exfoliated graphene oxide, prepared from pre-exfoliated graphite, in acetamide-urea-ammonium nitrate ternary eutectic melt results in few layer-graphene thin films. Negatively charged exfoliated graphene oxide is attached to positively charged cystamine monolyer self-assembled on a gold surface. Electrochemical reduction of the oriented graphene oxide film is carried out in a room temperature, ternary molten electrolyte. The reduced film is characterized by atomic force microscopy (AFM), conductive AFM, Fourier-transform infrared spectroscopy and Raman spectroscopy. Ternary eutectic melt is found to be a suitable medium for the regulated reduction of graphene oxide to reduced graphene oxide-based sheets on conducting surfaces. (C) 2010 Elsevier B.V. All rights reserved.

Unsteady three-dimensional boundary layer flow due to a stretching surface

In this numerical study, the unsteady laminar incompressible boundary-layer flow over a continuously stretching surface has been investigated when the velocity of the stretching surface varies arbitrarily with time. Both the nodal and the saddle point regions of flow have been considered for the analysis. Also, constant wall temperature/concentration and constant heat/mass flux at the stretching surface have been taken into account. The quasilinearisation method with an implicit finite-difference scheme is used in the nodal point region (0 less-than-or-equal-to c less-than-or-equal-to 1) where c denotes the stretching ratio. This method fails in the saddle point region (-1 less-than-or-equal-to c less-than-or-equal-to 0) due to the occurrence of reverse flow in the y-component of velocity. In order to overcome this difficulty, the method of parametric differentiation with an implicit finite-difference scheme is used, where the values at c = 0 are taken as starting values. Results have been obtained for the stretching velocities which are accelerating and decelerating with time. Results show that the skin friction, the heat transfer and the mass transfer parameters respond significantly to the time dependent stretching velocities. Suction (A > 0) is found to be an important parameter in obtaining convergent solution in the case of the saddle point region of flow. The Prandtl number and the Schmidt number strongly affect the heat and mass transfer of the diffusing species, respectively.

Varistors based on n-BaTiO3 ceramics

Stable and highly reproducible voltage-limiting characteristics have been observed at room temperature for polycrystalline ceramics prepared from donor-doped BaTiO3 solid solutions containing isovalent lattice substitute ions that lower the Curie point Tc. When the ambient temperature Ta is decreased such that Ta < Tc, the same ceramics show current-limiting behaviour. The leakage current, the breakdown voltage and the non-linear coefficient (α = 30−50) could be varied with grain-boundary layer (GBL) modifiers and postsintering annealing. The magnitude of the abnormally high dielectric constant (epsilon (Porson)r greater than, approximately 105) indicates the prevalence of GBL capacitance in these ceramics. Analyses of the current-voltage relations show that GBL conduction at Ta < Tc corresponds to tunnelling across asymmetric barriers formed under steady state Joule heating. At Ta > Tc, trap-related conduction gives way to tunnelling across symmetric barriers as the field strength increases.