The influence of Zr layer thickness on contact deformation and fracture in a ZrN-Zr multilayer coating

In order to understand the influence of ductile metal interlayer on the overall deformation behavior of metal/nitride multilayer, different configurations of metal and nitride layers were deposited and tested under indentation loading. To provide insight into the trends in deformation with multilayer spacings, an FEM model with elastic-perfect plastic metal layers alternate with an elastic nitride on top of an elastic-plastic substrate. The strong strain mismatch between the metal and nitride layers significantly alters the stress field under contact loading leading to micro-cracking in the nitride, large tensile stresses immediately below the contact, and a transition from columnar sliding in thin metal films to a more uniform bending and microcracking in thicker coatings.

Effect of natural convection on oscillating flow in a pipe with cryogenic temperature difference across the ends

The effect of natural convection on the oscillatory flow in an open-ended pipe driven by a timewise sinusoidally varying pressure at one end and subjected to an ambient-to-cryogenic temperature difference across the ends, is numerically studied. Conjugate effects arising out of the interaction of oscillatory flow with heat conduction in the pipe wall are taken into account by considering a finite thickness wall with an insulated exterior surface. Two cases, namely, one with natural convection acting downwards and the other, with natural convection acting upwards, are considered. The full set of compressible flow equations with axissymmetry are solved using a pressure correction algorithm. Parametric studies are conducted with frequencies in the range 5-15 Hz for an end-to-end temperature difference of 200 and 50 K. Results are obtained for the variation of velocity, temperature. Nusselt number and the phase relationship between mass flow rate and temperature. It is found that the Rayleigh number has a minimal effect on the time averaged Nusselt number and phase angle. However, it does influence the local variation of velocity and Nusselt number over one cycle. The natural convection and pressure amplitude have influence on the energy flow through the gas and solid. (C) 2011 Elsevier Ltd. All rights reserved.

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Surface-potential-based compact charge models for symmetric double-gate metal-oxide-semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental assumption of having equal oxide thicknesses for both gates. However, for practical devices, there will always be some amount of asymmetry between the gate oxide thicknesses due to process variations and uncertainties, which can affect device performance significantly. In this paper, we propose a simple surface-potential-based charge model, which is applicable for tied double-gate MOSFETs having same gate work function but could have any difference in gate oxide thickness. The proposed model utilizes the unique so-far-unexplored quasi-linear relationship between the surface potentials along the channel. In this model, the terminal charges could be computed by basic arithmetic operations from the surface potentials and applied biases, and thus, it could be implemented in any circuit simulator very easily and extendable to short-channel devices. We also propose a simple physics-based perturbation technique by which the surface potentials of an asymmetric device could be obtained just by solving the input voltage equation of SDG devices for small asymmetry cases. The proposed model, which shows excellent agreement with numerical and TCAD simulations, is implemented in a professional circuit simulator through the Verilog-A interface and demonstrated for a 101-stage ring oscillator simulation. It is also shown that the proposed model preserves the source/drain symmetry, which is essential for RF circuit design.

Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

Since it is difficult to find the analytical solution of the governing Poisson equation for double gate MOSFETs with the body doping term included, the majority of the compact models are developed for undoped-body devices for which the analytical solution is available. Proposed is a simple technique to included a body doping term in such surface potential based common double gate MOSFET models also by taking into account any differences between the gate oxide thickness. The proposed technique is validated against TCAD simulation and found to be accurate as long as the channel is fully depleted.

PIV study on the dimple mid-plane of a narrow rectangular channel with dimples applied to one wall

This paper presents an investigation of the fluid flow in the fully developed portion of a rectangular channel (Aspect Ratio of 2) with dimples applied to one wall at channel Reynolds numbers of 20,000, 30,000, and 40,000. The dimples are applied in a staggered-row, racetrack configuration. Results for three different dimple geometries are presented: a large dimple, small dimple, and double dimple. Heat transfer and aerodynamic results from preceding works are presented in Nusselt number and friction factor augmentation plots as determined experimentally. Using particle image velocimetry, the region near the dimple feature is studied in detail in the location of the entrainment and ejection of vortical packets into and out of the dimple; the downstream wake region behind each dimple is also studied to examine the effects of the local flow phenomenon that result in improved heat transfer in the areas of the channel wall not occupied by a feature. The focus of the paper is to examine the secondary flows in these dimpled channels in order to support the previously presented heat transfer trends. The flow visualization is also intended to improve the understanding of the flow disturbances in a dimpled channel; a better understanding of these effects would lead the development of more effective channel cooling designs. Copyright © 2011 by ASME.

Effect of Thickness on The Optical Properties Change in Bi/As2S3 Bilayer Thin Films

Bilayer thin films of Bi/As2S3 were prepared from Bi and As2S3 by thermal evaporation technique under high vacuum. We have prepared three bilayer films of 905nm, 910nm and 915nm thickness with with As2S3 as bottom layer (900nm) and Bi as top layer (5,10,15 nm). We have compared the optical changes due to the thickness variation of Bi layer on As2S3 film. The changes were characterized by FTIR and XPS techniques.

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm(2) and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm(2) were achieved. We obtained luminance of 5993 cd/m(2) when current density was 140 mA/cm(2). The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength. (C) 2012 Elsevier B.V. All rights reserved.

Charge transport in functionalized multi-wall carbon nanotube-Nafion composite

The charge transport in sulfonated multi-wall carbon nanotube (sMWNT)-Nafion composite is reported. The scanning electron microscope images of the composite, at 1 and 10 wt % of sMWNT, show that the nanotubes are well dispersed in polymer matrix, with conductivity values of 0.005 and 3.2 S/cm, respectively; and the percolation threshold is nearly 0.42 wt. %. The exponent (∼0.25) of the temperature dependence of conductivity in both samples indicates Mott's variable range hopping (VRH) transport. The conductance in 1 wt. % sample increases by three orders of magnitude at high electric-fields, consistent with VRH model. The negative magnetoresistance in 10 wt. % sample is attributed to the forward interference scattering mechanism in VRH transport. The ac conductance in 1 wt. % sample is expressed by σ(ω)∝ωs, and the temperature dependence of s follows the correlated barrier hopping model.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Natural convection in a series of thermally interacting cavities with wall mounted heaters

Laminar natural convection in a series of thermally interacting cavities is numerically studied. Each cavity consists of a conducting bottom wall with a surface mounted heater. The side walls of the cavities are isothermally cooled. Each cavity thermally interacts with its adjacent cavities through the conducting walls. Flow and heat transfer characteristics are studied in detail for various Rayleigh numbers. The convection characteristics in multiple cavities are compared with those in single independent cavity. The thermal interaction between the cavities results in lower temperatures compared with those in independent cavities. While heat is rejected into the adjacent upper cavity through some portion of the conducting wall, heat is received from the adjacent cavity through the remaining portion of the wall. The influence of substrate conductivity on heat exchange between adjacent cavities are examined. Substrate conductivity shows strong effect on temperature distribution. When cooling at both vertical sides is changed to one side cooling, the heat transfer characteristics are changed drastically and many interesting flow features are observed. Effects of cavity aspect ratio is studied and higher heat transfer rates are observed at higher aspect ratios. Correlations for dimensionless temperature maximum and average Nusselt number are presented in terms of Rayleigh number.

Analysis of rectangular folded waveguide SWS with grating on the broad wall

An E-plane rectangular folded-waveguide slow-wave structure with metal grating on the broad wall of the waveguide along the direction of the electric field has been proposed and analyzed for the dispersion and interaction impedance characteristics through three dimensional electromagnetic modeling in CST Studio. The effects of the presence of grating on the bandwidth and interaction impedance are demonstrated.

Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry

With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQS model shows good agreement against TCAD simulations and appears to be useful for efficient circuit simulation.

A multifold reduction in the transition Reynolds number, and ultra-fast mixing, in a micro-channel due to a dynamical instability induced by a soft wall

A dynamical instability is observed in experimental studies on micro-channels of rectangular cross-section with smallest dimension 100 and 160 mu m in which one of the walls is made of soft gel. There is a spontaneous transition from an ordered, laminar flow to a chaotic and highly mixed flow state when the Reynolds number increases beyond a critical value. The critical Reynolds number, which decreases as the elasticity modulus of the soft wall is reduced, is as low as 200 for the softest wall used here (in contrast to 1200 for a rigid-walled channel) The instability onset is observed by the breakup of a dye-stream introduced in the centre of the micro-channel, as well as the onset of wall oscillations due to laser scattering from fluorescent beads embedded in the wall of the channel. The mixing time across a channel of width 1.5 mm, measured by dye-stream and outlet conductance experiments, is smaller by a factor of 10(5) than that for a laminar flow. The increased mixing rate comes at very little cost, because the pressure drop (energy requirement to drive the flow) increases continuously and modestly at transition. The deformed shape is reconstructed numerically, and computational fluid dynamics (CFD) simulations are carried out to obtain the pressure gradient and the velocity fields for different flow rates. The pressure difference across the channel predicted by simulations is in agreement with the experiments (within experimental errors) for flow rates where the dye stream is laminar, but the experimental pressure difference is higher than the simulation prediction after dye-stream breakup. A linear stability analysis is carried out using the parallel-flow approximation, in which the wall is modelled as a neo-Hookean elastic solid, and the simulation results for the mean velocity and pressure gradient from the CFD simulations are used as inputs. The stability analysis accurately predicts the Reynolds number (based on flow rate) at which an instability is observed in the dye stream, and it also predicts that the instability first takes place at the downstream converging section of the channel, and not at the upstream diverging section. The stability analysis also indicates that the destabilization is due to the modification of the flow and the local pressure gradient due to the wall deformation; if we assume a parabolic velocity profile with the pressure gradient given by the plane Poiseuille law, the flow is always found to be stable.

Elastic thickness structure of the Andaman subduction zone: Implications for convergence of the Ninetyeast Ridge

We use the Bouguer coherence (Morlet isostatic response function) technique to compute the spatial variation of effective elastic thickness (T-e) of the Andaman subduction zone. The recovered T-e map resolves regional-scale features that correlate well with known surface structures of the subducting Indian plate and the overriding Burma plate. The major structure on the India plate, the Ninetyeast Ridge (NER), exhibits a weak mechanical strength, which is consistent with the expected signature of an oceanic ridge of hotspot origin. However, a markedly low strength (0< T-e <3 km) in that region, where the NER is close to the Andaman trench (north of 10 N), receives our main attention in this study. The subduction geometry derived from the Bouguer gravity forward modeling suggests that the NER has indented beneath the Andaman arc. We infer that the bending stresses of the viscous plate, which were reinforced within the subducting oceanic plate as a result of the partial subduction of the NER buoyant load, have reduced the lithospheric strength. The correlation, T-e < T-s (seismogenic thickness) reveals that the upper crust is actively deforming beneath the frontal arc Andaman region. The occurrence of normal-fault earthquakes in the frontal arc, low Te zone, is indicative of structural heterogeneities within the subducting plate. The fact that the NER along with its buoyant root is subducting under the Andaman region is inhibiting the subduction processes, as suggested by the changes in trench line, interrupted back-arc volcanism, variation in seismicity mechanism, slow subduction, etc. The low T-e and thinned crustal structure of the Andaman back-arc basin are attributed to a thermomechanically weakened lithosphere. The present study reveals that the ongoing back-arc spreading and strike-slip motion along the West Andaman Fault coupled with the ridge subduction exerts an important control on the frequency and magnitude of seismicity in the Andaman region. (C) 2013 Elsevier Ltd. All rights reserved.