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A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1-xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. (C) 1999 American Institute of Physics. [S0021-8979(99)02109-X].
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The optical absorption of a GaAs/AlGaAs quantum dot superlattice nanoring (QDSLNR) under a lateral dc electric field and with magnetic flux threading the ring is investigated. This structure and configuration provides a unique opportunity to study the optical response of a superlattice under an inhomogeneous electric field, which is not easily realized for general quantum well superlattices (QWSLs) but naturally realized for QDSLNRs under a homogeneous lateral electric field. It has been shown that a lateral dc electric field gives rise to a substantial change of the optical absorption spectra. Under a low field, the excitonic optical absorption is dominated by a 1s exciton. And with the electric field increasing, the optical absorption undergoes a transition from 1s excitonic absorption to 0 excitronic WSL absorption. (The number of 0, and -1 and +1 below are WSLs index.) The -1 and the +1 WSLs corresponding to the maximum effective field can also be identified. Due to the inhomogeneity of the electric field, the peaks of the -1 and the +1 WSLs are diminished and between them there exist rich and complicated structures. This is in contrast to the general QWSLs under a homogenous electric field. The complicated structures can be understood by considering the inhomogeneity of the electric field along the ring, which results in the nearest-neighbor transition, the next-nearest-neighbor transition, etc., have a different value repectively, at different sites along the ring. This may give rise to multiple WSLs. We have also shown that the line shape of the optical absorption is not sensitive to the threading magnetic flux. The threading magnetic flux only gives rise to a slight diamagnetic shift. Thus the enhancement of the sensitivity to the flux allowing for observation of the excitonic Aharanov-Bohm effect in the plain nanoring is not expected in QDSLNRs.
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探讨全球气候变化的生物学和生态学效应是当今生态学中的热点,研究大气CO2浓度升高对植物-昆虫相互作用关系的影响具有重要的理论和实践意义。本文使用开顶式气室(Open-top chamber,OTC)在野外条件下研究了CO2浓度升高对三种树木(小青杨、白桦和蒙古栎)叶片化学成分含量的影响,以及树木叶片品质变化对一种广食性森林昆虫(舞毒蛾)幼虫取食、生长发育和取食偏嗜性的影响。得出如下结果:(1)CO2浓度升高对3个受试树种叶片中的营养成分及次生代谢物含量均有显著影响,总体表现为氮含量降低,而碳氮比、非结构性碳水化合物、总酚和缩合丹宁含量增加。叶片中的化学成分含量可随时间发生显著变化,不同树种、甚至同一树种不同冠层高度的叶片对CO2浓度升高的响应强度也是不同的。叶片的干物质含量和比叶重对CO2浓度升高的响应不显著。(2)室内非选择性取食实验、室内选择性取食实验以及上树取食饲养方式下的多龄期取食实验,均发现高浓度CO2处理组内舞毒蛾幼虫的生长发育受到显著抑制。但对四龄舞毒蛾幼虫所进行的短期生物测定并未发现不同CO2浓度处理下幼虫的生长发育速率、对食物的取食率和转化率等昆虫营养指标存在显著差异。(3)叶片品质的降低是导致舞毒蛾幼虫生长发育受抑制的主要原因。但是总体上,CO2浓度升高导致的叶片品质变化并未显著影响幼虫的取食率和取食量。(4)舞毒蛾幼虫对不同叶片种类表现出清晰的取食选择性,这种选择性在其幼龄期就可表现出来。幼虫对小青杨上层叶片有最显著的偏嗜性,对蒙古栎下层叶片有最明显的拒食性。但是CO2浓度升高导致的叶片品质变化对舞毒蛾幼虫的取食选择性和寄主偏嗜行为并未产生显著影响。(5)检测出高浓度CO2处理组内舞毒蛾幼虫虫粪中含有浓度更高的植物次生代谢物质(总酚和缩合单宁),这很可能是昆虫整体生长发育受抑制的重要原因之一。
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为了从分子水平对中国药用石斛及其混伪品进行鉴定,本文选取了核rDNA ITS 序列和叶绿体DNA 的matK 基因序列进行研究。采用改良的CTAB 法提取石斛的基因组DNA,PCR 产物直接测序法对17 种(共32 份)药用石斛的核糖体内转录间隔区ITS 全序列进行测定,克隆测序法对12 种(共22 份)药用石斛的叶绿体的matK 基因序列进行测定,运用BioEd it,MEGA4.0 等生物软件分析了石斛属植物的rDNA ITS 序列及叶绿体的matK 基因序列的特征,比较了石斛属间、种间、种内不同居群(品种)间的序列碱基差异及遗传距离,应用邻接法构建分子系统树。主要研究结果如下: (1)建立了17 种(共32 份)药用石斛rDNA ITS 区碱基全序列数据库,其中,ITS1 的长度为228~234 bp,GC 含量为45.7%~53.0%,变异位点167 个,占总位点67.34%,信息位点106 个,占总位点42.74%,ITS2 长度为241~247 bp,GC含量为44.8%~55.7%,变异位点165 个,占总位点66.27%,信息位点115 个,占总位点46.18%。 (2)建立了12 种(共22 份)药用石斛的叶绿体matK 基因全序列数据库,叶绿体matK 基因长1410 bp,变异位点51 个,信息位点11 个。除了存在碱基替换的遗传变异外,还存在碱基的插入和缺失。 (3)通过ITS 序列比较分析了各材料间的遗传距离和碱基差异,属间的遗传距离为0.295,石斛种间的平均遗传距离为0.142,碱基相差2~156 个,种内各居群间的平均遗传距离为0.002,碱基相差1~2 个。属间的遗传距离大于种间的遗传距离,种间的遗传距离大于种内不同居群(品种)间的遗传距离。 (4)根据分析石斛叶绿体的matK 基因序列得到,外类群(密花石豆兰)与石斛属间最小遗传距离为0.027,石斛种间的平均遗传距离为0.008,种间最大的遗传距离0.014, 最小的遗传距离为0.003,碱基相差8~20 个。种内不同居群(品种)遗传距离为0.001,相差1~5 个碱基。 (5)利用17 种石斛的全序列数据库及遗传分析软件,通过对待检种rDNA I TS区进行序列测定,成功地对10 个待检种进行了鉴定,并且在原植物开花后得到了验证。 (6)运用12 种石斛的matK 基因全序列数据库及遗传分析软件,成功地对4个待检种进行了鉴定,同样在原植物开花后得到了验证。 (7)本文利用石斛的核糖体内转录间隔区ITS 序列和叶绿体的matK 基因序列数据库分别构建了NJ 树,外类群与石斛属间石斛种间以及种内不同居群(品种)间均能在NJ 树中明显分化开来,二者构建的分子系统树一致,为石斛的分子鉴定提供了依据。 In order to identify Chinese Herba Dendrobii and its adulterant species on molecular level, we studied the sequences of rDNA ITS and chloroplast matK gene. Genomic DNA of Dendrobium was extracted using the modified cetyltrimethyl ammonium bromide (CTAB) method. The PCR products of the rDNA ITS sequences of Dendrobium (32 materia ls) were purified and then sequenced. The PCR products of chloroplast matK gene of Dendrobium (22 materia ls) were purified, cloned and then sequenced. The characteristic of the sequences and the genetic dista nce were compared between Bulbophyllum odoratissimum and Dendrobium, Dendrobium interspecies, and different populations. Phylogenetic trees were constructed using the NJ method by the biology softwares including BioEd it, MEGA4.0 etc. The ma in results as follows: (1) It was built up that the database of rDNA ITS sequences of 17 species of Herba Dendrobii (32 materia ls). The ITS1 was 228~234 bp, the GC content accounting for 45.7%~53.0%. Its variable sites were 167, accounting for 67.34%. The Parsim-Informative positions were 106, accounting for 42.74%. The ITS2 was 241~247 bp, the GC accounting for 44.8%~55.7%. The variable sites were 165, accounting for 66.27%. The Parsim-Informative positions were 115, accounting for 46.18%. (2) The database of the chloroplast matK gene sequences was built up, which contained 12 species of Herba Dendrobii (22 materia ls). The matK gene sequences were about 1410bp in length. There were 51 variable sites and 11 Parsim-Informative sites. And there were nucleotides insertions and deletions in some species , in addition to the nucleotides substitutions. (3) The rDNA ITS sequences were compared and analyzed by the biology softwares. The genetic dista nce between Bulbophyllum odoratissimum and Dendrobium was 0.295. The avera ge genetic dista nce was 0.142 between Dendrobium species, and there were 2~156 variable nucleotides. The avera ge genetic dista nce between different populations was 0.002, and there were 2~156 variable nucleotides. The genetic dista nce between Bulbophyllum odoratissimum and Dendrobium was greater tha n that of Denrobium interspecies. Meanwhile, the genetic dista nce between Denrobium species was also greater tha n that of different populations (variaties). (4) The characteristics of the chloroplast matK gene sequences were obtained after analyzing by the biology softwares. The minima l genetic dista nce was 0.027 between Bulbophyllum odoratissimum and Dendrobium . The ma xima l genetic dista nce was 0.014 between Dendrobium species, and there were 20 variable nucleotides. The minima l genetic dista nce between populations was 0.003, and there were 8 variable nucleotides.The genetic dista nce between populations was 0.001, and there were 1~5 variable nucleotides. (5) The molecular Phylogeny tree was constructed on the database of rDNA ITS the sequences of 17 species of Herba Dendrobii using the biology softwares. Then we authenticated 10 materia ls on molecular level. What’s more, they had been proved when these pla nts flowered. (6) The molecular Phylogeny tree was built up on the database of chloroplast matK gene sequences of 12 species of Herba Dendrobii with the biology softwares.Then 4 materia ls were authenticated on molecular level. Moreover, they had also been proved when these pla nts were in flower. (7) The Phylogenetic trees were separately constructed on the sequences of rDNA ITS and chloroplast matK gene B. odoratissimum and Dendrobium all could be distinguished on the Phylogenetic trees. Meanwhile, the Phylogenetic trees based on two groups of sequences were coincident. rDNA ITS and matK gene sequence could be used as molecular markers for authentication of Herba Dendrobii.
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IEECAS SKLLQG
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IEECAS SKLLQG