Nature of potential barrier in (Ca-1/4,Cu-3/4)TiO3 polycrystalline perovskite

The nonohmic electrical features of (Ca-1/4,Cu-3/4)TiO3 perovskite ceramics, which have very strong gigantic dielectric is believed originate from potential barriers at the grain boundaries. In the present study, we used the admittance and impedance spectroscopy technique to investigate (Ca-1/4,Cu-3/4)TiO3 perovskite ceramics with low nonohmic electrical properties. The study was conducted under two different conditions: on as-sintered ceramics and on ceramics thermally treated in an oxygen-rich atmosphere. The results confirm that thermal treatment in oxygen-rich atmospheres influence the nonohmic properties. Annealing at oxygen-rich atmospheres improve the nonohmic behavior and annealing at oxygen-poor atmospheres decrease the nonohmic properties, a behavior already reported for common metal oxide nonohmic devices and here firstly evidenced for the (Ca-1/4,Cu-3/4)TiO3 perovskite related materials. The results show that oxygen also influences the capacitance values at low frequencies, a behavior that is indicative of the Schottky-type nature of the potential barrier. (c) 2006 Elsevier Ltd. All rights reserved.

Comparative electrical behavior at low and high current of SnO(2)- and ZnO-based varistors

The complete I-V characteristics of SnO(2)-based varistors, particularly of the Pianaro system SCNCr consisting in 98.9%SnO(2)+1%CoO+0.05%Nb(2)O(5)+0.05%Cr(2)O(3), all in mol%, have been seldom reported in the literature. A comparative study at low and high currents of the nonohmic behavior of SCNCr- and ZnO-based varistors (modified Matsuoka system) is proposed in this work. The SCNCr system showed higher nonlinearity coefficients in the whole range of measured current. The electrical breakdown field (E(b)) was twice as high for the SCNCr system (5400 V/cm) than for the ZnO varistor (2600 V/cm) due to a smaller average grain size of the former (4.5 mu m) with respect to the latter (8.5 mu m). Nevertheless, we consider that another important factor responsible for the high E(b) in the SCNCr system is the great number of electrically active interfaces (85%) as determined with electrostatic force microscopy (EFM). It was also established that the SCNCr system might be produced in disks of smaller dimensions than that of commercial ZnO-based product, with a 5.0 cm(-1) minimal area-volume (A/V) ratio. The SCNCr reached the saturation current in a short time because of the high resistivity of the grains, which is five times higher than that of the grains in ZnO-based varistors.

Microstructure and electrical properties of (Ta, Co, Pr) doped TiO2 based electroceramics

The addition of different dopants affects the densification, mean grain size and electrical properties of TiO2-based varistor ceramics. This paper discusses the microstructural and electrical properties of (Ta, Co, Pr) doped TiO2 systems, demonstrating that some of these systems display electrical properties that allow for their use as low voltage varistor. Dopants such as Ta2O5 play a special role in the formation of barriers at the grain boundary and in the nonlinear behavior in TiO2-based systems. The higher values of nonlinear coefficient and breakdown electric field were obtained in the system just doped with Ta2O5 and CoO.

Varistores à base de SnO2: estado da arte e perspectivas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sintering of tin oxide and its applications in electronics and processing of high purity optical glasses

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cerâmicas eletrônicas à base de SnO2 e TiO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeito do Pr2O3 nas propriedades elétricas de varistores à base de SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento de varistores à base de SnO2 para aplicação em redes de alta tensão

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Revisão: efeito dos metais doadores nas propriedades elétricas e microestruturais dos varistores cerâmicos à base de SnO2

O estudo da adição de dopantes trivalentes é uma das principais pesquisas na área de varistores. Vários autores têm buscado entender os efeitos destes dopantes nas propriedades elétricas e microestruturais destas cerâmicas eletrônicas. Tanto metais de transição quanto terras raras são adicionados em cerâmicas à base de SnO2 a fim de verificar o seu comportamento. O que se tem observado é que alguns destes óxidos tais como Cr2O3 e La2O3 melhoram significativamente as propriedades elétricas dos varistores, enquanto que outros como o Bi2O3 e Er2O3, por exemplo, não produzem tal efeito. A evolução do desempenho do comportamento varistor tem sido também atribuída às espécies de oxigênio produzidas pela reação com estes dopantes. Esta revisão apresenta resultados de estudos recentes do comportamento varistor frente a adição de metais doadores.

Caracterização elétrica de blocos varistores à base de SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Electronic ceramics based on polycrystalline SnO2, TiO2 and (Sn xTi1-x)O2 solid solution

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

An ab initio study of oxygen vacancies and doping process of Nb and Cr atoms on TiO2 (110) surface models

We theoretically investigated how the formation of oxygen vacancies and the addition of niobium and chromium atoms as dopants modify the varistor properties of TiO2. The calculations were carried out at the HF level using a contracted basis set, developed by Huzinaga et al.. to represent the atomic centers on the (110) surface for the large (TiO2)(15) cluster model. The change of the values for the net atomic charges and band gap after oxygen vacancy formation and the presence of dopants in the lattice are analyzed and discussed. It is shown that the formation of oxygen vacancies decreases the band gap while an opposite effect is found when dopants are located in the reduced surface. The theoretical results are compared with available experimental data. A plausible explanation of the varistor behavior of this system is proposed. (C) 1997 John Wiley & Sons, Inc.

ZnO varistors from intensively milled powders

Two ways of application of intensive milling in ZnO varistors processing were compared. First was intensive milling of mixture of previously prepared constituent phases. In this case, intensive milling was applied only to obtain highly activated nanocrystalline varistor powder mixtures. Second application is intensive milling of simple mixture of oxides that could result not only in activation and formation of nanocrystal line powders, but also in mechanochernical reaction and synthesis of constituent phases. Powders and ceramics samples were characterized by XRD and SEM analysis. as well as by de electrical measurements (nonlinearity coefficients, leakage current and breakdown field). Differences in microstructural and electrical properties of obtained varistors were discussed and optimal milling and processing conditions were recommended. The best electrical characteristics were found in sample ZI -DMCP-m, which exhibited leakage current of 2.5 mu A/cm(2), nonlinear coefficient reaching 58 and breakdown field of 8950 V/cm. (c) 2007 Elsevier Ltd. All rights reserved.

A theoretical analysis on electronic structure of the (110) surface of TiO2-SnO2 mixed oxide

Mixed oxide compounds, such as TiO2-SnO2 system are widely used as gas sensors and should also provide varistor properties modifying the TiO2 surface. Therefore, a theoretical investigation has been carried out characterizing the effect of SnO2 on TiO2 addition on the electronic structure by means of ab initio SCF-LCAO calculations using all electrons. In order to take into account the finite size of the cluster, we have used the point charge model for the (TiO2)(15) cluster to study the effect on electronic structure of doping the TiO2 (110) Surface. The contracted basis set for titanium (4322/42/3), oxygen (33/3) and tin (43333/4333/43) atoms were used. The charge distributions, dipole moments, and density of states of doping TiO2 and vacancy formation are reported and analysed. (C) 2003 Elsevier B.V. All rights reserved.

Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors

The SnO2 based varistor systems recently presented in the literature appear to have a promising potential in commercial applications. Experimental evidence shows that there is a dependence of nonlinear constant values with thermal treatment under different atmospheres. Thermal treatments in oxygen and nitrogen rich atmospheres at 900 degreesC prove this dependence, indicating that the nonlinear constant values are significantly lower when the material is submitted to a nitrogen atmosphere. Moreover, electrical properties can be restored when the varistor is subjected to thermal treatment at the same temperature in an oxygen atmosphere, indicating that the mechanism seems to be reversible. This paper discusses this behavior focusing in the grain boundary region. Ta2O5 mol% concentrations are also analyzed and the results indicate an optimum Ta2O5 concentration of 0.05 mol% for the electrical properties (alpha = 44 and E-B = 6150 V cm(-1)). (C) 2001 Elsevier B.V. Ltd. All rights reserved.