Multi-scale modelling of atomic layer deposition

High-permittivity ("high-k") dielectric materials are used in the transistor gate stack in integrated circuits. As the thickness of silicon oxide dielectric reduces below 2 nm with continued downscaling, the leakage current because of tunnelling increases, leading to high power consumption and reduced device reliability. Hence, research concentrates on finding materials with high dielectric constant that can be easily integrated into a manufacturing process and show the desired properties as a thin film. Atomic layer deposition (ALD) is used practically to deposit high-k materials like HfO2, ZrO2, and Al2O3 as gate oxides. ALD is a technique for producing conformal layers of material with nanometer-scale thickness, used commercially in non-planar electronics and increasingly in other areas of science and technology. ALD is a type of chemical vapor deposition that depends on self-limiting surface chemistry. In ALD, gaseous precursors are allowed individually into the reactor chamber in alternating pulses. Between each pulse, inert gas is admitted to prevent gas phase reactions. This thesis provides a profound understanding of the ALD of oxides such as HfO2, showing how the chemistry affects the properties of the deposited film. Using multi-scale modelling of ALD, the kinetics of reactions at the growing surface is connected to experimental data. In this thesis, we use density functional theory (DFT) method to simulate more realistic models for the growth of HfO2 from Hf(N(CH3)2)4/H2O and HfCl4/H2O and for Al2O3 from Al(CH3)3/H2O.Three major breakthroughs are discovered. First, a new reaction pathway, ’multiple proton diffusion’, is proposed for the growth of HfO2 from Hf(N(CH3)2)4/H2O.1 As a second major breakthrough, a ’cooperative’ action between adsorbed precursors is shown to play an important role in ALD. By this we mean that previously-inert fragments can become reactive once sufficient molecules adsorb in their neighbourhood during either precursor pulse. As a third breakthrough, the ALD of HfO2 from Hf(N(CH3)2)4 and H2O is implemented for the first time into 3D on-lattice kinetic Monte-Carlo (KMC).2 In this integrated approach (DFT+KMC), retaining the accuracy of the atomistic model in the higher-scale model leads to remarkable breakthroughs in our understanding. The resulting atomistic model allows direct comparison with experimental techniques such as X-ray photoelectron spectroscopy and quartz crystal microbalance.

Etude spectroscopique d’un plasma micro-onde à la pression atmosphérique et son application à la synthèse de nanostructures

L’objectif de ce mémoire de maîtrise est de caractériser la distribution axiale des plasmas tubulaires à la pression atmosphérique créés et entretenus par une onde électromagnétique de surface ainsi que d’explorer le potentiel de ces sources pour la synthèse de matériaux et de nanomatériaux. Un précédent travail de thèse, qui avait pour objectif de déterminer les mécanismes à l’origine de la contraction radiale du plasma créé dans des gaz rares, a mis en lumière un phénomène jusque-là inconnu dans les plasmas d’onde de surface (POS). En effet, la distribution axiale varie différemment selon la puissance incidente ce qui constitue une différence majeure par rapport aux plasmas à pression réduite. Dans ce contexte, nous avons réalisé une étude paramétrique des POS à la pression atmosphérique dans l’Ar. À partir de nos mesures de densité électronique, de température d’excitation et de densité d’atomes d’Ar dans un niveau métastable (Ar 3P2), résolues axialement, nous avons conclu que le comportement axial de l’intensité lumineuse avec la puissance n’est pas lié à un changement de la cinétique de la décharge (qui est dépendante de la température des électrons et de la densité d’atomes d’Ar métastables), mais plutôt à une distribution anormale de dissipation de puissance dans le plasma (reliée à la densité d’électrons). Plus précisément, nos résultats suggèrent que ce dépôt anormal de puissance provient d’une réflexion de l’onde dans le fort gradient de densité de charges en fin de colonne, un effet plus marqué pour de faibles longueurs de colonnes à plasma. Ensuite, nous avons effectué une étude spectroscopique du plasma en présence de précurseurs organiques, en particulier le HMDSO pour la synthèse de matériaux organosiliciés et l’IPT pour la synthèse de matériaux organotitaniques. Les POS à la PA sont caractérisés par des densités de charges très élevées (>10^13 cm^-3), permettant ainsi d’atteindre des degrés de dissociation des précurseurs nettement plus élevés que ceux d'autres plasmas froids à la pression atmosphérique comme les décharges à barrière diélectrique. Dans de tels cas, les matériaux synthétisés prennent la forme de nanopoudres organiques de taille inférieure à 100 nm. En présence de faibles quantités d’oxygène dans le plasma, nous obtenons plutôt des nanopoudres à base d’oxyde de silicium (HMDSO) ou à base de titanate de silicium (IPT), avec très peu de carbone.

Effects of parylene-C photooxidation on serum-assisted glial and neuronal patterning

The increasing use of patterned neural networks in multielectrode arrays and similar devices drives the constant development and evaluation of new biomaterials. Recently, we presented a promising technique to guide neurons and glia reliably and effectively. Parylene-C, a common hydrophobic polymer, was photolithographically patterned on silicon oxide (SiO2) and subsequently activated via immersion in serum. In this article, we explore the effects of ultraviolet (UV)-induced oxidation on parylene's ability to pattern neurons and glia. We exposed parylene-C stripe patterns to increasing levels of UV radiation and found a dose-dependent reduction in the total mass of patterned cells, as well as a gradual loss of glial and neuronal conformity to the patterns. In contrast, nonirradiated patterns had superior patterning results and increased presence of cells. The reduced cell adhesion and patterning after the formation of aldehyde and carboxyl groups on UV-radiated parylene-C supports our hypothesis that cell adhesion and growth on parylene is facilitated by hydrophobic adsorption of serum proteins. We conclude that unlike other cell patterning schemes, our technique does not rely on photooxidation of the polymer. Nonetheless, the precise control of oxygenated groups on parylene could pave the way for the differential binding of proteins and other molecules on the surface, aiding in the adhesion of alternative cell types. © 2010 Wiley Periodicals, Inc. J Biomed Mater Res, 2010

Guided growth of neurons and glia using microfabricated patterns of parylene-C on a SiO2 background

This paper describes a simple technique for the patterning of glia and neurons. The integration of neuronal patterning to Multi-Electrode Arrays (MEAs), planar patch clamp and silicon based ‘lab on a chip’ technologies necessitates the development of a microfabrication-compatible method, which will be reliable and easy to implement. In this study a highly consistent, straightforward and cost effective cell patterning scheme has been developed. It is based on two common ingredients: the polymer parylene-C and horse serum. Parylene-C is deposited and photo-lithographically patterned on silicon oxide (SiO2) surfaces. Subsequently, the patterns are activated via immersion in horse serum. Compared to non-activated controls, cells on the treated samples exhibited a significantly higher conformity to underlying parylene stripes. The immersion time of the patterns was reduced from 24 to 3 h without compromising the technique. X-ray photoelectron spectroscopy (XPS) analysis of parylene and SiO2 surfaces before and after immersion in horse serum and gel based eluant analysis suggests that the quantity and conformation of proteins on the parylene and SiO2 substrates might be responsible for inducing glial and neuronal patterning.

Filmes finos dielétricos para dispositivos microeletrônicos avançados

Apresentamos mecanismos de formação e de degradação térmica de filmes fi- nos (espessura da ordem de 10 nm) de diferentes dielétricos sobre substrato de silício monocristalino. Tendo em vista a aplicação dessas estruturas em MOSFETs (transistores de efeito de campo metal-óxido-semicondutor), estudamos o consagrado óxido de silício (SiO2), os atuais substitutos oxinitretos de silício (SiOxNy) e o possível substituto futuro óxido de alumínio (Al2O3). Nossos resultados experimentais baseiam-se em técnicas preparativas de substituição isotópica e de caracterização física com feixes de íons (análise com reações nucleares) ou raios- X (espectroscopia de fotoelétrons). Observamos que: (a) átomos de silício não apresentam difusão de longo alcance (além de ~ 2 nm) durante o crescimento de SiO2 por oxidação térmica do silício em O2; (b) nitretação hipertérmica é capaz de produzir filmes finos de oxinitreto de silício com até dez vezes mais nitrogênio que o resultante do processamento térmico usual, sendo que esse nitrogênio tende a se acumular na interface SiOxNy/Si; e (c) átomos de oxigênio, alumínio e silício migram e promovem reações químicas durante o recozimento térmico de estruturas Al2O3/SiO2/Si em presença de O2. Desenvolvemos um modelo de difusão-reação que poderá vir a permitir o estabelecimento de condições ótimas de processamento térmico para filmes finos de Al2O3 sobre silício a serem empregados na fabricação de MOSFETs.

Briquetting of charcoal from sugar-cane bagasse fly ash (scbfa) as an alternative fuel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Deposition of SiOx Thin Films on Y-TZP by Reactive Magnetron Sputtering: Influence of Plasma Parameters on the Adhesion Properties Between Y-TZP and Resin Cement for Application in Dental Prosthesis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influência da catálise ácida e básica na preparação da sílica funcionalizada pelo método sol-gel

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Functionalized silica synthesized by sol-gel process

This work considers some aspects of the chemistry involved in the preparation and description of silicon oxide functionalized by sol-gel process. In this work we studied the synthesis and measured the properties of silicon oxide functionalized with 3-chloropropyl, through a sol-gel process. Thermogravimetic analysis, infrared spectra, and elemental analyses were measured. The samples were prepared in the following proportions of tetraethylorthosilicate (TEOS): 3-chloropropyl trimethoxisilane molar ratio: 1:0, 1:1, 2:1, 3:1 and 4:1. The thermogravimetric data for the resulting materials established the 'minimum formulae' 2:0, 3:1, 4.1, 7:1 and 11:1, respectively. As expected, the relative amount of water is inversely proportional to the presence of propyl groups. Infrared data show Si-C and -CH2-vibration modes at 1250 to 1280 and 2920 to 2940 cm(-1), respectively. Thermogravimetric data and infrared spectra showed that inorganic polymers contained organic polymers. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Rhodamine B-containing silica films from TEOS precursor: Substrate surface effects detected by photoluminescence

This work presents the study of substrate surface effects on rhodamine B-containing silica films obtained from TEOS (tetraethylorthosilicate) acid hydrolysis. Soda-lime glass substrates were treated with basic solution under different reaction times and temperatures. Rhodamine B-containing silica films were deposited on pre-treated substrates by the spin-coating method. The substrate surface directly affects film morphology and homogeneity. The films are formed by packed silica spheres which protect the dye against acid-base attack. Luminescence spectra present shifts on the dye emission maximum as expected for different pH values on the substrate surface depending on the alkaline treatment. (c) 2006 Elsevier B.V. All rights reserved.

Controlled route to the fabrication of carbon and boron nitride nanoscrolls: A molecular dynamics investigation

Carbon nanoscrolls (graphene layers rolled up into papyrus-like tubular structures) are nanostructures with unique and interesting characteristics that could be exploited to build several new nanodevices. However, an efficient and controlled synthesis of these structures was not achieved yet, making its large scale production a challenge to materials scientists. Also, the formation process and detailed mechanisms that occur during its synthesis are not completely known. In this work, using fully atomistic molecular dynamics simulations, we discuss a possible route to nanoscrolls made from graphene layers deposited over silicon oxide substrates containing chambers/pits. The scrolling mechanism is triggered by carbon nanotubes deposited on the layers. The process is completely general and can be used to produce scrolls from other lamellar materials, like boron nitride, for instance. © 2013 American Institute of Physics.

Síntese e caracterização de nanopartículas e filmes finos de óxidos semicondutores

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Argilominerais: influência dos aditivos (cinza de bagaço de cana-de-acúcar e rocha sedimentar) no processo de sinterização

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Efeito do silício aplicado no solo e em pulverização foliar na incidência da lagarta do cartucho na cultura do milho

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Avaliação do potencial de uso agrícola da fluorita com óxido silício (AgroSiCa), derivado da fabricação de fertilizantes fosfatados

Phosphate fertilizers are critical for crop production in tropical soils, which are known for having high phosphate-fixing capacity and aluminium saturation, as well as low pH and calcium contents. Fluorine is a component of many phosphate rocks used to make phosphate fertilizers, via a process that generates hexafluorosilicic acid (H2SiF6). While many treatment technologies have been proposed for removal of fluorine in industrial facilities, little attention has been given to a process of neutralizing H2SiF6 with calcium oxide aiming to find out an alternative and sustainable use of a by-product with a great potential for beneficial use in tropical agriculture. This study evaluated the effect of a by-product of phosphoric acid production (fluorite with silicon oxide, hereafter called AgroSiCa) in levels of phosphorus (P), calcium (Ca), silicon (Si), aluminum (Al) and fluorine (F) and some others parameters in soils as on growth of soybean and corn. Experiments were conducted in a greenhouse condition at the Federal University of Lavras (UFLA), Lavras, Minas Gerais, using different types of soils in tropical regions and different doses of AgroSiCa. The application of AgroSiCa resulted in a slight increase in soil pH and significant increases in calcium, phosphorus and silicon in the soil solution and the shoots of corn and soybeans. We also found very low levels of fluoride in all soil leachates. A significant reduction of labile aluminum levels found in all soils after the cultivation of corn and soybeans. In sum, AgroSiCa improved soil properties and contributed to better growth of both cultures. In sum, AgroSiCa improved soil properties and contributed to a better growth of both crops. Our results show that reacting H2SiF6 derived from the wet-process phosphoric acid production with calcium oxide leads to a by-product with potential for agricultural use, especially when applied in highly-weathered soils. Besides providing calcium and silicon to plants, the use of such by-product in soils with high phosphate-fixing capacity and high aluminium saturation delivers additional benefits, since fluoride and silicon can play an important role in improving soil conditions due to the formation of less plant-toxic forms of aluminium, as well as upon decreasing phosphate fixation, thus improving root development and making fertilizer-derived phosphate more available for plant growth.