Effect Of High Pressure On The Electrical Resistivity Of Ge-Te In Glasses

The variation in the electrical resistivity of the chalcogenide glasses Ge15Te85-x has been studied as a function of high pressure for pressures up to 8.5GPa. All the samples studied undergo a semi-conductor to metallic transition in a continuous manner at pressures between 1.5-2.5GPa. The transition pressure at which the samples turn metallic increases with increase in percentage of Indium. This increase is a direct consequence of the increase in network rigidity with the addition of Indium. At a constant pressure of 0.5GPa, the normalized resistivity shows some signature of the existence of the intermediate phase. Samples recovered after a pressure cycle remain amorphous suggesting that the semi-conductor to metallic transition arises from a reduction of the band gap due to pressure or the movement of the Fermi level into the conduction or valence band.

Formation, thermal, optical and physical properties of GeS2-Ga2S3-AgCl novel chalcohalide glasses

Novel GeS2-Ga2S3-AgCl chalcohalide glasses had been prepared by melt-quenching technique, and the glass-forming region was determined by XRD, which indicated that the maximum of dissolvable AgCl was up to 65 mol%. Thermal and optical properties of the glasses were studied by differential scanning calorimetry (DSC) and Visible-IR transmission, which showed that most of GeS2-Ga2S3-AgCl glasses had strong glass-forming ability and broad region of transmission (about 0.45-12.5 mu m). With the addition of AgCl, the glass transition temperature, Tg decreases distinctly, and the short-wavelength cut-off edge (lambda(vis)) of the glasses also shifts to the long wavelength gradually. However, the glass-forming ability of the glass has a complicated evolutional trend depended on the compositional change. In addition, the values of the Vickers microhardness, H (v) , which decrease with the addition of AgCl, are high enough for the practical applications. These excellent properties of GeS2-Ga2S3-AgCl glasses make them potentially applied in the optoelectronic field, such as all-optical switch, etc.

Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials

The thesis provides an overall review and introduction to amorphous semiconductors, followed by a brief discussion on the important structural models proposed for chalcogenide glasses and their electrical, optional and thermal properties. It also gives a brief description of the Physics of thin films, ion implantation and Photothermal Deflection Spectroscopy. A brief description of the experimental setup of a photothermal deflection spectrometer and the details of the preparation and optical characterization of the thin film samples. It deals with the employment of the subgap optional absorption measurement by PDS to characterize the defects, amorphization and annealing behavior in silicon implanted with B+ ions and the profiles of ion range and vacancy distribution obtained by the TRIM simulation. It reports the results of all absorption measurements by PDS in nitrogen implanted thin film samples of Ge-Se and As-Se systems

Fabrication and Characterization of Chalcogenide nano composite based materials for Photonic device applications

In this context,in search of new materials based on chalcogenide glasses,we have developed a novel technique for fabrication of chalcogenide nano composites which are presented in this theis.The techniques includes the dissolution of bulk chalcogenide glasses in amine solvent.This solution casting method allows to retain the attractive optical properties of chalcogenide glasses enabling new fabrication routes for realization of large area thick-thin films with less cost. Chalcogenide glass fiber geometry opens new possibilities for a large number of applications in optics,like remote temperature measurements ,CO2 laser power delivery, and optical sensing and single mode propagation of IR light.We have fabricated new optical polymer fibers doped with chalcogenide glasses which can be used for many optical applications.The present thesis also describes the structural,thermal and optical characterization of certain chalocogenide based materials prepared for different methods and its applications.

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

We report the fabrication of relief diffraction gratings recorded on a surface of photosensitive Ga10Ge25S65 and Ga5Ge25As5S65 glasses by means of interference of two UV laser beams at 351 nm. The diffraction efficiency (eta) of first diffraction order was measured. Atomic-force-microscope (AFM) was used to perform a 3D imaging analysis of the sample surface topography that shows the superposition of an imprinted grating over the topography of the glass. The change in the absorption edge and the refractive index has been evaluated and a structural approach of the relief grating on the glass surface has been discussed.

Photosensitivity in antimony based glasses

New glass forming systems based on Sb2O3-SbPO4 has been explored. These glasses present higher thermal stability against devitrification and higher refractive index than chalcogenide glasses. Under irradiation, using Ar-laser 350nm wavelength and 50 mW power density, change on the coloration is observed. Structural and electronic modifications around Sb cations induced by such treatment have been characterized by XANES measurements at the L-Sb edges. on the one hand, XANES spectra, at the LJ edge, show a decrease of the coordination number for Sb atoms induced by exposure to light indicating a breaking of Sb-O bonds in the glassy network. on the other hand, XANES spectra, at the Lt edge, suggest a change in the oxidation state of Sb atoms. These modifications associated to the photodarkening of the glass is reversible either after a couple of days or after heating the glass at the glass transition temperature, T-g.

Analysis of the topography of a Bragg grating in chalcogenide glass

Relief Bragg gratings were recorded on the surface of Ga-Ge-S glass samples by interference of two UV laser beams at 351 nm, Scanning force microscopy was used to perform a 3D image analysis of the resulting surface topography, which shows the superposition of an imprinted grating over the base topography of the glass. An important question regarding the efficiency of the grating is to determine to what extent the base topography reduces the intended coherent scattering of the grating because of its stochastic character. To answer this question we separated both base and grating structures by Fourier filtering, examined both spatial frequency and roughness, and determined the correlation. (C) 2001 Elsevier B.V. B.V. All rights reserved.

The influence of oxygen in the photoexpansion of GaGeS glasses

Irreversible photoexpansion and photobleaching effect has been observed in amorphous Ga10Ge25S65 glass when its surface was exposed to light with energy greater than the band gap, 3.52 eV. The magnitude of the expansion of GaGeS glasses depends on the exposure conditions. Extended X-ray absorption fine structure (EXAFS) spectroscopy and Rutherford backscattering spectrometry (RBS) have been used to identify the chemical nature of the glass samples before and after illumination. The quantitative analysis of the EXAFS data leads to a two-shell model of 0.5 oxygen atoms at 2.01 Angstrom and 3.6 sulfur atoms at a 2.20 Angstrom. RBS technique demonstrated that chemical composition of the glass surface after irradiation is oxygen rich. The existence of Ge-O bonds in the glass after illumination was also confirmed by infrared measurements. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Photo-induced effects in Ge25Ga10S65 glasses studied by XPS and XAS

The present paper focuses on the structural, electronic, and compositional properties of Ge25Ga10S65 glasses before and after UV illumination in air using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) techniques. The XPS Ge 3d spectra reveal the existence of Ge-O bonds in the surface region of illuminated glass. In the case of this sample, XAS O K-edge spectra showed the formation of an enriched region of oxygen atoms in the glass bulk, indicating a different bonding structure of oxygen at the surface and in the bulk of the glass. Moreover, the structural changes that occur after UV illumination in the glass sample are identified as the formation of a homogeneous germanium oxide surface layer followed by an intermediary Ge25Ga10S65-yOz subsurface region. (c) 2005 Elsevier B.V. All rights reserved.

Totally visible transparent chloro-sulphide glasses based on Ga2S3-GeS2-CsCI

In this paper, the influence on optical properties of alkali halides such as CsCl in a covalent glassy matrix has been investigated. Chalcogenide glasses belonging to the (GeS2)-(Ga2S3)-CsCI system with high ratio of CsCl present an entire transparency in the visible range. These glasses maintain good transmission up to 12 mu m. Furthermore, the thermo-mechanical properties and the glass hygroscopicity have been investigated as function of the CsCl amount. This new generation of glasses presents a great interest for optical application. They could be used both for passive applications (multi-spectral imaging) and active applications for rare-earth doping due to their good transmission in the visible range, increasing optical pumping possibilities.

Nonlinear effects generation in suspended core chalcogenide fibre

In this work we report our achievements in the elaboration and optical characterizations of low-losses suspended core optical fibers elaborated from As2S3 glass. For preforms elaboration, alternatively to other processes like the stack and draw or extrusion, we use a process based on mechanical drilling. The drawing of these drilled performs into fibers allows reaching a suspended core geometry, in which a 2 μm diameter core is linked to the fiber clad region by three supporting struts. The different fibers that have been drawn show losses close to 0.9 dB/m at 1.55 μm. The suspended core waveguide geometry has also an efficient influence on the chromatic dispersion and allows its management. Indeed, the zero dispersion wavelength, which is around 5 μm in the bulk glass, is calculated to be shifted towards around 2μm in our suspended core fibers. In order to qualify their nonlinearity we have pumped them at 1.995 μm with the help of a fibered ns source. We have observed a strong non linear response with evidence of spontaneous Raman scattering and strong spectral broadening. © 2011 SPIE.

Photoinduced transparency of effective three-photon absorption coefficient for femtosecond laser pulses in Ge16As29Se55 thin films

We report a dramatic change in effective three-photon absorption coefficient of amorphous Ge16As29Se55 thin films, when its optical band gap decreases by 10 meV with 532 nm light illumination. This large change provides valuable information on the higher excited states, which are otherwise inaccessible via normal optical absorption. The results also indicate that photodarkening in chalcogenide glasses can serve as an effective tool to tune the multiphoton absorption in a rather simple way. (C) 2011 American Institute of Physics.

Chemical and shifted mechanical thresholds in Al-Ge-Te glass system

We report the results of the electrical switching studies performed on the bulk Al20GexTe80-x (2.5 less than or equal to x less than or equal to 15) chalcogenide glasses. The well known topological features, mechanical and chemical thresholds are observed. Mechanical threshold is seen at a mean coordination number of atoms, < r > = 2.50 (x = 5) a clear shift rom the mean field value of < r > = 2.4 whereas the chemical threshold is observed at < r > = 2.65 (x = 12.5) as predicted by the chemically ordered covalent network model These experiments are a sequel to similar experiments on Al20AsxTe80-x glasses in which mechanical threshold was seen at < r > = 2.60 and no chemical threshold was observed These results am well understood by a chemical bond picture developed in this article.

Non-resonant third-order non-linear optical properties of amorphous GeSe2 film

The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 x 10(-12) esu and -3.0 x 10(-12) esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms. (c) 2005 Elsevier B.V. All rights reserved.

Dy^3＋掺杂Ge-Ga-Se硫系玻璃的性质(英文)

实验制备了Dy^3+掺杂Ge-Ga—Se系统硫系玻璃样品，测试了玻璃的密度、显微硬度、可见-红外透射光谱、荧光光谱以及荧光寿命。根据玻璃的密度计算了玻璃的摩尔体积以及致密度。讨论了玻璃的这些性能随系统平均配位数的变化关系。实验结果表明：该系统中配位数大于2．67的玻璃在1．3μm具有较好的发光性能，荧光寿命在440-530μs之间，当玻璃组成位于化学门槛即平均配位数为2．73时玻璃的发光强度最强。