Synthesis and Mechanism of Composition and Size Dependent Morphology Selection in Nanoparticles of Ag-Cu Alloys Processed by Laser Ablation Under Liquid Medium

We have synthesized Ag-Cu alloy nanoparticles of four different compositions by using the laser ablation technique with the target under aqueous medium. Following this, we report a morphological transition in the nanoparticles from a normal two-phase microstructure to a structure with random segregation and finally a core shell structure at small sizes as a function of Cu concentration. To illustrate the composition dependence of morphology, we report observations carried out on nanoparticles of two different sizes: similar to 5 and similar to 20 nm. The results could be rationalized through the thermodynamic modeling of free energy of phase mixing and wettability of the alloying phases.

Solution Processed Cu2CoSnS4 Thin Films for Photovoltaic Applications

Earth abundant alternative chalcopyrite Cu2CoSnS4 (CCTS) thin films were deposited by a facile sol-gel process onto larger substrates. Temperature dependence of the process control of deposition and desired phase formations was studied in detail. Films were analyzed for complete transformation from amorphous to polycrystalline, with textured structures for stannite phase, as reflected from the X-ray diffraction and with nearly stoichiometric compositions of Cu:Co:Sn:S = 2:0:1:0:1:0:4:0 from EDAX analysis. Morphological investigations revealed that the CCTS films with larger grains, on the order of its thickness, were synthesized at higher temperature of 500 degrees C. The optimal band gap for application in photovoltaics was estimated to be 1.4 eV. Devices with SLG/CCTS/Al geometry were fabricated for real time demonstration of photoconductivity under A.M 1.5 G solar and 1064 rim infrared laser illuminations. A photodetector showed one order current amplification from similar to 1.9 X 10(-6) A in the dark to 2.2 x 10(-5) A and 9.8 X 10(-6) A under A.M 1.5 G illumination and 50 mW cm(-2) IR laser, respectively. Detector sensitivity, responsivity, external quantum efficiency, and gain were estimated as 4.2, 0.12 A/W, 14.74% and 14.77%, respectively, at 50 mW cm(-2) laser illuminations. An ON and OFF ratio of 2.5 proved that CCTS can be considered as a potential absorber in low cost photovoltaics applications.

Formation of annular austenitic ring between outer ferrite layer and solid globule in a semi-solid processed SS 304L

The microstructure of an austenitic SS 304L rapidly quenched from its semi-solid state shows a unique annular austenitic ring in between the core of each globule and its ferritic outer layer. On the basis of experimental results and microstructural analysis, it is proposed that the ring is formed as a result of preferential austenitic phase nucleation in a small quantity of liquid entrapped between adjacent solid globules during rapid quenching, in spite of the fact that ferrite is the thermodynamically stable phase for the alloy. (C) 2014 Elsevier B.V. All rights reserved.

Room Temperature-Processed TiO2 MIM Capacitors for DRAM Applications

We report the room temperature fabrication of Ta/TiO2/Ta metal-insulator-metal (MIM) capacitors (mainly, for DRAM applications). The fabricated devices show high capacitance density (similar to 15 fF/mu m(2)), and low leakage current density of 6.4 X 10(-8) A/cm(2) (27 degrees C) and 3.3 x 10(-6) A/cm(2) (125 degrees C) at -1 V. We analyze the electrical and material characteristics of the fabricated capacitors, and compare the device performance of these capacitors with other TiO2 and TiO2-based MIM capacitors reported in recent literature.

Copolyesters from Soybean Oil for Use as Resorbable Biomaterials

A family of soybean oil (SO) based biodegradable cross-linked copolyesters sourced from renewable resources was developed for use as resorbable biomaterials. The polyesters were prepared by a melt condensation of epoxidized soybean oil polyol and sebacic acid with citric acid (CA) as a cross-linker. D-Mannitol (M) was added as an additional reactant to improve mechanical properties. Differential scanning calorimetry revealed that the polyester synthesized using only CA as the cross-linker was semicrystalline and elastomeric at physiological temperature. The polymers were hydrophobic in nature. The water wettability, elongation at break and the degradation rate of the polyesters decreased with increase in M content or curing time. Modeling of release kinetics of dyes showed a diffusion controlled mechanism underlies the observed sustained release from these polymers. The polyesters supported attachment and proliferation of human stem cells and were thus cytocompatible. Porous scaffolds induced osteogenic differentiation of the stern cells suggesting that these polymers are well suited for bone tissue engineering. Thus, this family of polyesters offers a low cost and green alternative as biocompatible, bioresobable polymers for potential use as resorbable biomaterials for tissue engineering and controlled release.

Analysis of Microstructure and Texture Evolution in Mg-3Al-1Zn Alloy Processed Through Groove Rolling

The mechanism of grain refinement in a AZ31 Mg alloy subjected to hot groove rolling is investigated up to large strain (epsilon(t) similar to 2.5). The alloy shows enhanced yield strength without compromising ductility. The change in strain path during rolling has resulted in significant weakening of basal texture. The microstructure analyses show that dynamic recrystallization (DRX) contributed significantly to grain refinement and hence to the observed mechanical properties. The combined effects of DRX and texture evolution on mechanical properties have been addressed.

Impact of glycosylation on stability, structure and unfolding of soybean agglutinin (SBA): an insight from thermal perturbation molecular dynamics simulations

Glycosylation has been recognized as one of the most prevalent and complex post-translational modifications of proteins involving numerous enzymes and substrates. Its effect on the protein conformational transitions is not clearly understood yet. In this study, we have examined the effect of glycosylation on protein stability using molecular dynamics simulation of legume lectin soybean agglutinin (SBA). Its glycosylated moiety consists of high mannose type N-linked glycan (Man(9)GlcNAc(2)). To unveil the structural perturbations during thermal unfolding of these two forms, we have studied and compared them to the experimental results. From the perspective of dynamics, our simulations revealed that the nonglycosylated monomeric form is less stable than corresponding glycosylated form at normal and elevated temperatures. Moreover, at elevated temperature thermal destabilization is more prominent in solvent exposed loops, turns and ends of distinct beta sheets. SBA maintains it folded structure due to some important saltbridges, hydrogen bonds and hydrophobic interactions within the protein. The reducing terminal GlcNAc residues interact with the protein residues VAL161, PRO182 and SER225 via hydrophobic and via hydrogen bonding with ASN 9 and ASN 75. Our simulations also revealed that single glycosylation (ASN75) has no significant effect on corresponding cis peptide angle orientation. This atomistic description might have important implications for understanding the functionality and stability of Soybean agglutinin.

Transport properties of solution processed Cu2SnS3/AZnO heterostructure for low cost photovoltaics

Cu2SnS3 thin films were deposited by a facile sot-gel technique followed by annealing. The annealed films were structurally characterized by grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). The crystal structure was found to be tetragonal with crystallite sizes of 2.4-3 nm. Texture coefficient calculations from the GIXRD revealed the preferential orientation of the film along the (112) plane. The morphological investigations of the films were carried out using field emission scanning electron microscopy (FESEM) and the composition using electron dispersive spectroscopy (EDS). The temperature dependent current, voltage characteristics of the Cu2SnS3/AZnO heterostructure were studied. The log I-log V plot exhibited three regions of different slopes showing linear ohmic behavior and non-linear behavior following the power law. The temperature dependent current voltage characteristics revealed the variation in ideality factor and barrier height with temperature. The Richardson constant was calculated and its deviation from the theoretical value revealed the inhomogeneity of the barrier heights. Transport characteristics were modeled using the thermionic emission model. The Gaussian distribution of barrier heights was applied and from the modified Richardson plot the value of the Richardson constant was found to be 47.18 A cm(-2) K-2. (c) 2015 Elsevier B.V. All rights reserved.

Two-Phase Metallic Thermal Interface Materials Processed Through Liquid Phase Sintering Followed by Accumulative Roll Bonding

Thermal interface materials (TIMs) form a mechanical and thermal link between a heat source and a heat sink. Thus, they should have high thermal conductivity and high compliance to efficiently transfer heat and accommodate any differential strain between the heat source and the sink, respectively. This paper reports on the processing and the characterization of potential metallic TIM composite solders comprising of Cu, a high conductivity phase, uniformly embedded in In matrix, a highly compliant phase. We propose the fabrication of such a material by a two-step fabrication technique comprising of liquid phase sintering (LPS) followed by accumulative roll bonding (ARB). To demonstrate the efficacy of the employed two-step processing technique, an In-40 vol. % Cu composite solder was produced first using LPS with short sintering periods (30 or 60 s at 160 degrees C) followed by ARB up to five passes, each pass imposing a strain of 50%. Mechanical response and electrical and thermal conductivities of the fabricated samples were evaluated. It was observed that processing through ARB homogenizes the distribution of Cu in an In matrix, disintegrates the agglomerates of Cu powders, and also significantly increases thermal and electrical conductivities, almost attaining theoretically predicted values, without significantly increasing the flow stress. Furthermore, the processing technique also allows the insertion of desired foreign species, such as reduced graphene oxide, in In-Cu for further enhancing a target property, such as electrical conductivity.

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm-1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 mu A to a current of 1.78 mu A at 1.05 suns and 8.7 mu A under 477.7 mW/cm(2) IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 x 10(10) Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 x 10(10) Jones respectively at 477.7 mW/cm(2) IR illumination. The transient photoresponse was measured both for visible and IR illuminations. (C) 2016 Author(s).

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Investigation of critical state in melt processed YBa2Cu3O7-δ thick films

The magnetic moment of square planar melt processed YBa2Cu3O7-δ thick films is observed to scale with the cube of the sample width at 4.2 K, suggesting that current flow on the length scale of the film determines its magnetization at this temperature. A well-defined discontinuity in slope in the scaling data at a sample width corresponding to the average grain size (≈2 mm) implies the coexistence of distinct intra- and inter-grain critical current densities of 1.1 × 105Acm-2 and 0.4 × 105Acm-2 at 1 T and 4.2 K. The presence of a critical state in the films at 4.2T is confirmed by removing the central section from a specimen. The observed change in magnetic moment is in excellent agreement with theory for fields greater than ≈2 T. A critical state is not observed at 77 K which suggests that the grains are only weakly coupled at the higher temperature. © 1994.