Trawling gear and towing power of the Nigerian inshore fishing trawlers

This paper deals with the relation between trawling gear and towing power of the Nigerian inshore fishing trawlers. Information on the size as well as weight variations of the existing otter boards as they relate to the horse power of the engine and length of warps in relation to fishing depth are given

The power of fish trader associations in the marketing of fish in Lagos State

This paper focusses on the activities of trade associations in the marketing of fish in Lagos State. The study covers 6 different markets in Lagos State of Nigeria. Analysis indicates that 86% of the traders are members of the associations. The ages of the traders range from 21 to over 55 years. However, majority are between the ages of 31 and 45 years. Traders secure their initial capital mostly from trade associations and Esusu/Ajo. Most traders have no working capital to maintain a regular series of outlets, so wholesalers turn to associations for funds, while retailers turn to wholesalers. They eventually pay back when they sell to consumers. The fish industry is found to be imperfectly competitive mostly because of the actions of fish trader associations. The fish marketing system is highly personalised and loyality exists between wholesalers and retailers and their customers

The power of quantum Fourier sampling

How powerful are Quantum Computers? Despite the prevailing belief that Quantum Computers are more powerful than their classical counterparts, this remains a conjecture backed by little formal evidence. Shor's famous factoring algorithm [Shor97] gives an example of a problem that can be solved efficiently on a quantum computer with no known efficient classical algorithm. Factoring, however, is unlikely to be NP-Hard, meaning that few unexpected formal consequences would arise, should such a classical algorithm be discovered. Could it then be the case that any quantum algorithm can be simulated efficiently classically? Likewise, could it be the case that Quantum Computers can quickly solve problems much harder than factoring? If so, where does this power come from, and what classical computational resources do we need to solve the hardest problems for which there exist efficient quantum algorithms?

We make progress toward understanding these questions through studying the relationship between classical nondeterminism and quantum computing. In particular, is there a problem that can be solved efficiently on a Quantum Computer that cannot be efficiently solved using nondeterminism? In this thesis we address this problem from the perspective of sampling problems. Namely, we give evidence that approximately sampling the Quantum Fourier Transform of an efficiently computable function, while easy quantumly, is hard for any classical machine in the Polynomial Time Hierarchy. In particular, we prove the existence of a class of distributions that can be sampled efficiently by a Quantum Computer, that likely cannot be approximately sampled in randomized polynomial time with an oracle for the Polynomial Time Hierarchy.

Our work complements and generalizes the evidence given in Aaronson and Arkhipov's work [AA2013] where a different distribution with the same computational properties was given. Our result is more general than theirs, but requires a more powerful quantum sampler.

Electrical resistance and thermoelectric power of the metastable phases in tellurium-base alloys

By using techniques of rapid quenching from the melt, metastable phases have been obtained in ternary alloys which contain tellurium as a major component and two of the three noble metals (Cu, Ag, Au) as minor components. The metastable phases found in this investigation are either simple cubic or amorphous. The formation of the simple cubic phase is discussed. The electrical resistance and the thermoelectric power of the simple cubic alloy (Au₃₀Te₇₀) have been measured and interpreted in terms of atomic bondings. The semiconducting properties of a metastable amorphous alloy (Au₅Cu₂₅Te₇₀) have been measured. The experimental results are discussed in connection with a theoretical consideration of the validity of band theory in an amorphous solid. The existence of extrinsic conduction in an amorphous semiconductor is suggested by the result of electrical resistance and thermoelectric power measurements.

Stopping power of gases for heavy ions

Pulse-height and time-of-flight methods have been used to measure the electronic stopping cross sections for projectiles of ¹²C, ¹⁶O, ¹⁹F, ²³Na, ²⁴Mg, and ²⁷Al, slowing in helium, neon, argon, krypton, and xenon. The ion energies were in the range 185 keV ≤ E ≤ 2560 keV.

A semiempirical calculation of the electronic stopping cross section for projectiles with atomic numbers between 6 and 13 passing through the inert gases has been performed using a modification of the Firsov model. Using Hartree-Slater-Fock orbitals, and summing over the losses for the individual charge states of the projectiles, good agreement has been obtained with the experimental data. The main features of the stopping cross section seen in the data, such as the Z₁ oscillation and the variation of the velocity dependence on Z₁ and Z₂, are present in the calculation. The inclusion of a modified form of the Bethe-Bloch formula as an additional term allows the increase of the velocity dependence for projectile velocities above v_o to be reproduced in the calculation.

Application of algal bioassays in the determination of eutrophic power of waste water (”Conclusions” only) [Translation from: 1g.Sanita pubbl. 31 257-267, 1975]

The best evidence for establishing the level of eutrophy of a water-body is its algal production which makes it possible to identify the type and the intensity of the eutrophication according to the kind and number of algal species present: when the number of algae exceeds half a million per litre then one speaks o an ”algal bloom”. The scope of the present research aims to verify if the alga Selenastrum capricornutum can be used as a test alga under our culture conditions and to determine the eutrophic level of the secondary effluent of a modern plant for the treatment of domestic discharge and to investigate the eventual ”limiting factors”. Finally this paper aims to study the effect on the secondary effluent of tertiary treatment carried out artificially in the laboratory.

The predicting power of models for eutrophication

Restoration of water-bodies from eutrophication has proved to be extremely difficult. Mathematical models have been used extensively to provide guidance for management decisions. The aim of this paper is to elucidate important problems of using models for predicting environmental changes. First, the necessity for a proper uncertainty assessment of the model, upon calibration, has not been widely recognized. Predictions must not be a single time trajectory; they should be a band, expressing system uncertainty and natural variability. Availability of this information may alter the decision to be taken. Second, even with well-calibrated models, there is no guarantee they will give correct projections in situations where the model is used to predict the effects of measures designed to bring the system into an entirely different ”operating point”, as is typically the case in eutrophication abatement. The concept of educated speculation is introduced to partially overcome this difficulty. Lake Veluwe is used as a case to illustrate the point. Third, as questions become more detailed, such as ”what about expected algal composition”, there is a greater probability of running into fundamental problems that are associated with predicting the behaviour of complex non-linear systems. Some of these systems show extreme initial condition sensitivity and even, perhaps, chaotic behaviour, and are therefore fundamentally unpredictable.

On the fishing power of monofilament and multifilament gill nets

The authors have discussed the results of comparative fishing, conducted in the Govindsagar reservoir, with simple monofilament and multifilament gill nets. The experiments were conducted both in clear and turbid water. In both these water masses, the monofilament gill net has been found to be more efficient. It is also found that the four major species of fishes of the reservoir have not shown any preference towards a specific gear.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

Mechanism of enhancing output power of plasmonic very-small-aperture lasers

Light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of Au and dielectric material is analyzed by the finite difference time domain method in two dimensions. The results show that the transmission field can be enhanced by the corrugations on the output plane, which is a supplementary explanation for the extraordinary optical transmission.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS. (c) 2008 American Institute of Physics.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.