Readout Electronics for Gas Electron Multiplier Detectors

The European Organization for Nuclear Research (CERN) operates the largest particle collider in the world. This particle collider is called the Large Hadron Collider (LHC) and it will undergo a maintenance break sometime in 2017 or 2018. During the break, the particle detectors, which operate around the particle collider, will be serviced and upgraded. Following the improvement in performance of the particle collider, the requirements for the detector electronics will be more demanding. In particular, the high amount of radiation during the operation of the particle collider sets requirements for the electronics that are uncommon in commercial electronics. Electronics that are built to function in the challenging environment of the collider have been designed at CERN. In order to meet the future challenges of data transmission, a GigaBit Transceiver data transmission module and an E-Link data bus have been developed. The next generation of readout electronics is designed to benefit from these technologies. However, the current readout electronics chips are not compatible with these technologies. As a result, in addition to new Gas Electron Multiplier (GEM) detectors and other technology, a new compatible chip is developed to function within the GEMs for the Compact Muon Solenoid (CMS) project. In this thesis, the objective was to study a data transmission interface that will be located on the readout chip between the E-Link bus and the control logic of the chip. The function of the module is to handle data transmission between the chip and the E-Link. In the study, a model of the interface was implemented with the Verilog hardware description language. This process was simulated by using chip design software by Cadence. State machines and operating principles with alternative possibilities for implementation are introduced in the E-Link interface design procedure. The functionality of the designed logic is demonstrated in simulation results, in which the implemented model is proven to be suitable for its task. Finally, suggestions that should be considered for improving the design have been presented.

Transient current technique simulation of semiconductor detectors

Nowadays advanced simulation technologies of semiconductor devices occupies an important place in microelectronics production process. Simulation helps to understand devices internal processes physics, detect new effects and find directions for optimization. Computer calculation reduces manufacturing costs and time. Modern simulation suits such as Silcaco TCAD allow simulating not only individual semiconductor structures, but also these structures in the circuit. For that purpose TCAD include MixedMode tool. That tool can simulate circuits using compact circuit models including semiconductor structures with their physical models. In this work, MixedMode is used for simulating transient current technique setup, which include detector and supporting electrical circuit. This technique was developed by RD39 collaboration project for investigation radiation detectors radiation hard properties.

Photographs of secretarial staff at Lightning Fastener, ca. 1935

Lightning Fastener Co. Ltd. was a zipper manufacturer located on Niagara Street in St. Catharines. It was founded by Gideon Sundback, the inventor of the modern fastener. Sundback was born in Sweden, but settled in the United States in 1905. It was here that he designed and patented a “separable fastener” in 1913. Although he lived in Hoboken, New Jersey, he decided to establish a manufacturing facility for his invention in Canada, choosing St. Catharines over other locations such as Fort Erie and Hamilton. At the height of its success, the company employed more than 500 people and produced more than 50 million zippers annually. Over time, the company had difficulty remaining competitive and was forced to close in 1981.

LHC luminosity measurement with the ATLAS-MPX detectors

En opération depuis 2008, l’expérience ATLAS est la plus grande de toutes les expériences au LHC. Les détecteurs ATLAS- MPX (MPX) installés dans ATLAS sont basés sur le détecteur au silicium à pixels Medipix2 qui a été développé par la collaboration Medipix au CERN pour faire de l’imagerie en temps réel. Les détecteurs MPX peuvent être utilisés pour mesurer la luminosité. Ils ont été installés à seize différents endroits dans les zones expérimentale et technique d’ATLAS en 2008. Le réseau MPX a recueilli avec succès des données indépendamment de la chaîne d’enregistrement des données ATLAS de 2008 à 2013. Chaque détecteur MPX fournit des mesures de la luminosité intégrée du LHC. Ce mémoire décrit la méthode d’étalonnage de la luminosité absolue mesurée avec les détectors MPX et la performance des détecteurs MPX pour les données de luminosité en 2012. Une constante d’étalonnage de la luminosité a été déterminée. L’étalonnage est basé sur technique de van der Meer (vdM). Cette technique permet la mesure de la taille des deux faisceaux en recouvrement dans le plan vertical et horizontal au point d’interaction d’ATLAS (IP1). La détermination de la luminosité absolue nécessite la connaissance précise de l’intensité des faisceaux et du nombre de trains de particules. Les trois balayages d’étalonnage ont été analysés et les résultats obtenus par les détecteurs MPX ont été comparés aux autres détecteurs d’ATLAS dédiés spécifiquement à la mesure de la luminosité. La luminosité obtenue à partir des balayages vdM a été comparée à la luminosité des collisions proton- proton avant et après les balayages vdM. Le réseau des détecteurs MPX donne des informations fiables pour la détermination de la luminosité de l’expérience ATLAS sur un large intervalle (luminosité de 5 × 10^29 cm−2 s−1 jusqu’à 7 × 10^33 cm−2 s−1 .

Impedance field and transition from thermal to shot noise in Cd1-xZnxTe semi-insulating Ohmic detectors

Within a drift-diffusion model we investigate the role of the self-consistent electric field in determining the impedance field of a macroscopic Ohmic (linear) resistor made by a compensated semi-insulating semiconductor at arbitrary values of the applied voltage. The presence of long-range Coulomb correlations is found to be responsible for a reshaping of the spatial profile of the impedance field. This reshaping gives a null contribution to the macroscopic impedance but modifies essentially the transition from thermal to shot noise of a macroscopic linear resistor. Theoretical calculations explain a set of noise experiments carried out in semi-insulating CdZnTe detectors.

Integració 3D de detectors de píxels híbrids

La miniaturització de la industria microelectrònica és un fet del tot inqüestionables i la tecnologia CMOS no n'és una excepció. En conseqüència la comunitat científica s'ha plantejat dos grans reptes: En primer lloc portar la tecnologia CMOS el més lluny possible ('Beyond CMOS') tot desenvolupant sistemes d'altes prestacions com microprocessadors, micro - nanosistemes o bé sistemes de píxels. I en segon lloc encetar una nova generació electrònica basada en tecnologies totalment diferents dins l'àmbit de les Nanotecnologies. Tots aquests avanços exigeixen una recerca i innovació constant en la resta d'àrees complementaries com són les d'encapsulat. L'encapsulat ha de satisfer bàsicament tres funcions: Interfície elèctrica del sistema amb l'exterior, Proporcionar un suport mecànic al sistema i Proporcionar un camí de dissipació de calor. Per tant, si tenim en compte que la majoria d'aquests dispositius d'altes prestacions demanden un alt nombre d'entrades i sortides, els mòduls multixip (MCMs) i la tecnologia flip chip es presenten com una solució molt interessant per aquests tipus de dispositiu. L'objectiu d'aquesta tesi és la de desenvolupar una tecnologia de mòduls multixip basada en interconnexions flip chip per a la integració de detectors de píxels híbrids, que inclou: 1) El desenvolupament d'una tecnologia de bumping basada en bumps de soldadura Sn/Ag eutèctics dipositats per electrodeposició amb un pitch de 50µm, i 2) El desenvolupament d'una tecnologia de vies d'or en silici que permet interconnectar i apilar xips verticalment (3D packaging) amb un pitch de 100µm. Finalment aquesta alta capacitat d'interconnexió dels encapsulats flip chip ha permès que sistemes de píxels tradicionalment monolítics puguin evolucionar cap a sistemes híbrids més compactes i complexes, i que en aquesta tesi s'ha vist reflectit transferint la tecnologia desenvolupada al camp de la física d'altes energies, en concret implantant el sistema de bump bonding d'un mamògraf digital. Addicionalment s'ha implantat també un dispositiu detector híbrid modular per a la reconstrucció d'imatges 3D en temps real, que ha donat lloc a una patent.

Relationships between lightning and properties of convective cloud clusters

Satellite observations of convective system properties and lightning flash rate are used to investigate the ability of potential lightning parameterizations to capture both the dominant land-ocean contrast in lightning occurrence and regional differences between Africa, the Amazon and the islands of the maritime continent. As found in previous studies, the radar storm height is tightly correlated with the lightning flash rate. A roughly second order power-law fit to the mean radar echo top height above the 0C isotherm is shown to capture both regional and land-ocean contrasts in lightning occurrence and flash rate using a single set of parameters. Recent developments should soon make it possible to implement a parameterization of this kind in global models. Parameterizations based on cloud top height, convective rain rate and convective rain fraction all require the use of separate fits over land and ocean and fail to capture observed differences between continental regions.

An enhancement of the ionospheric sporadic‐E layer in response to negative polarity cloud‐to‐ground lightning

Lightning data, collected using a Boltek Storm Tracker system installed at Chilton, UK, were used to investigate the mean response of the ionospheric sporadic-E layer to lightning strokes in a superposed epoch study. The lightning detector can discriminate between positive and negative lightning strokes and between cloud-to-ground ( CG) and inter-cloud ( IC) lightning. Superposed epoch studies carried out separately using these subsets of lightning strokes as trigger events have revealed that the dominant cause of the observed ionospheric enhancement in the Es layer is negative cloud-to-ground lightning.

The location of lightning affecting the ionospheric sporadic-E layer as evidence for multiple enhancement mechanisms

We present a study of the geographic location of lightning affecting the ionospheric sporadic-E (Es) layer over the ionospheric monitoring station at Chilton, UK. Data from the UK Met Office's Arrival Time Difference (ATD) lightning detection system were used to locate lightning strokes in the vicinity of the ionospheric monitoring station. A superposed epoch study of this data has previously revealed an enhancement in the Es layer caused by lightning within 200km of Chilton. In the current paper, we use the same data to investigate the location of the lightning strokes which have the largest effect on the Es layer above Chilton. We find that there are several locations where the effect of lightning on the ionosphere is most significant statistically, each producing different ionospheric responses. We interpret this as evidence that there is more than one mechanism combining to produce the previously observed enhancement in the ionosphere.

Lightning-induced intensification of the ionospheric sporadic E layer

A connection between thunderstorms and the ionosphere has been hypothesized since the mid-1920s(1). Several mechanisms have been proposed to explain this connection(2-7), and evidence from modelling(8) as well as various types of measurements(9-14) demonstrate that lightning can interact with the lower ionosphere. It has been proposed, on the basis of a few observed events(15), that the ionospheric 'sporadic E' layer - transient, localized patches of relatively high electron density in the mid-ionosphere E layer, which significantly affect radio-wave propagation - can be modulated by thunderstorms, but a more formal statistical analysis is still needed. Here we identify a statistically significant intensification and descent in altitude of the mid-latitude sporadic E layer directly above thunderstorms. Because no ionospheric response to low-pressure systems without lightning is detected, we conclude that this localized intensification of the sporadic E layer can be attributed to lightning. We suggest that the co-location of lightning and ionospheric enhancement can be explained by either vertically propagating gravity waves that transfer energy from the site of lightning into the ionosphere, or vertical electrical discharge, or by a combination of these two mechanisms.

On the performance of near-far resistant CDMA detectors in the presence of synchronization errors

Little has so far been reported on the performance of the near-far resistant CDMA detectors in the presence of the synchronization errors. Starting with the general mathematical model of matched filters, this paper examines the effects of three classes of synchronization errors (i.e. time-delay errors, carrier phase errors, and carrier frequency errors) on the performance (bit error rate and near-far resistance) of an emerging type of near-far resistant coherent DS/SSMA detectors, i.e. the linear decorrelating detector (LDD). For comparison, the corresponding results for the conventional detector are also presented. It is shown that the LDD can still maintain a considerable performance advantage over the conventional detector even when some synchronization errors exist. Finally, several computer simulations are carried out to verify the theoretical conclusions.

Power control requirements in linear decorrelating detectors for CDMA

This paper addresses the effects of synchronisation errors (time delay, carrier phase, and carrier frequency) on the performance of linear decorrelating detectors (LDDs). A major effect is that all LDDs require certain degree of power control in the presence of synchronisation errors. The multi-shot sliding window algorithm (SLWA) and hard decision method (HDM) are analysed and their power control requirements are examined. Also, a more efficient one-shot detection scheme, called “hard-decision based coupling cancellation”, is proposed and analysed. These schemes are then compared with the isolation bit insertion (IBI) approach in terms of power control requirements.

Performance analysis of near-far resistant CDMA detectors-influence of system parameter estimation errors

Little has been reported on the performance of near-far resistant CDMA detectors in the presence of system parameter estimation errors (SPEEs). Starting with the general mathematical model of matched filters, the paper examines the effects of three classes of SPEEs, i.e., time-delay, carrier phase, and carrier frequency errors, on the performance (BER) of an emerging type of near-far resistant coherent DS/SSMA detector, i.e., the linear decorrelating detector. For comparison, the corresponding results for the conventional detector are also presented. It is shown that the linear decorrelating detector can still maintain a considerable performance advantage over the conventional detector even when some SPEEs exist.

Convergence analysis of chip- and fractionally spaced LMS adaptive multiuser CDMA detectors

This paper analyzes the convergence behavior of the least mean square (LMS) filter when used in an adaptive code division multiple access (CDMA) detector consisting of a tapped delay line with adjustable tap weights. The sampling rate may be equal to or higher than the chip rate, and these correspond to chip-spaced (CS) and fractionally spaced (FS) detection, respectively. It is shown that CS and FS detectors with the same time-span exhibit identical convergence behavior if the baseband received signal is strictly bandlimited to half the chip rate. Even in the practical case when this condition is not met, deviations from this observation are imperceptible unless the initial tap-weight vector gives an extremely large mean squared error (MSE). This phenomenon is carefully explained with reference to the eigenvalues of the correlation matrix when the input signal is not perfectly bandlimited. The inadequacy of the eigenvalue spread of the tap-input correlation matrix as an indicator of the transient behavior and the influence of the initial tap weight vector on convergence speed are highlighted. Specifically, a initialization within the signal subspace or to the origin leads to very much faster convergence compared with initialization in the a noise subspace.