Importância da avaliação hematológica e sorológica (dot-blot ELISA) no diagnóstico de erliquiose em cães

This study compared the hematological and serological analysis of diagnosis of canine ehrlichiosis. The survey of Ehrlichia canis was performed through the evaluation of blood smears from 150 dogs. The serological test was performed on 12 samples selected by the platelet count (less than 170,000 platelets / uL). Serologic testing was performed with the Imunocomb kit - Dot-blot-ELISA. No cytoplasmatic inclusion characteristic of morula of E. canis was found in blood smears. In serologic testing, eight samples were positive for Ehrlichia canis, concluding that thrombocytopenia is an important hematological finding of ehrlichiosis diagnosis and the detection of Ehrlichia canis morulae is uncommon. The serological evaluation Dot-blot ELISA is an accurate and brief diagnosis method of canine ehrlichiosis, been the most appropriate to be used in veterinary practice routine.

Paper-Based ELISA

Bill & Melinda Gates Foundation[51308]

The lead salt quantum dot intermediate band solar cell

We propose a new kind of quantum dot (QD) materials for the implementation of the intermediate band solar cell (IBSC) [1]. The materials are formed by lead salt QDs of the family IV-VI (PbTe, PbSe or PbS) embedded in a semiconductor of the family II-VI (Cd1-xMgxTe, CdxZn1-xTe, and CdS1-xSex or ZnSe1-xTex, respectively). These QDs are not nucleated due to lattice mismatch, as it is the case of the InAs/GaAs QD material system grown by the Stranski-Krastanov (S-K) mode. In these materials, the QDs precipitate due to the difference in lattice type: the QD lead salt material crystallizes in the rocksalt structure, while the II-VI host material has the zincblende structure [2]. Therefore, it is possible to use lattice-matched QD/host combinations, avoiding all the strain-related problems found in previous QD-IBSC developments. In this paper we discuss the properties of the lead salt QD materials and propose that they are appropriate to overcome the fundamental drawbacks of present III-V-based QD-IBSC prototypes. We also calculate the band diagram for some examples of IV-VI/II-VI QD materials. The detailed balance efficiency limit of QD-IBSCs based on the studied materials is found to be over 60% under maximum concentration.

Modelling of quantum dot solar cells for concentrator PV applications

An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (Voc) was observed in a range of low concentration due to the IB effect. Further, at around 100X concentration, Si-doped QDSC could outperform the reference GaAs p-i-n solar cell if the current source of IB current source were sixteen times to about 10mA/cm2 compared to our present cell.

Understanding the operation of quantum dot intermediate band solar cells

In this paper, a model for intermediate band solar cells is built based on the generally understood physical concepts ruling semiconductor device operation, with special emphasis on the behavior at low temperature. The model is compared to JL-VOC measurements at concentrations up to about 1000 suns and at temperatures down to 20 K, as well as measurements of the radiative recombination obtained from electroluminescence. The agreement is reasonable. It is found that the main reason for the reduction of open circuit voltage is an operational reduction of the bandgap, but this effect disappears at high concentrations or at low temperatures.

Absorption coefficient for the intraband transitions in quantum dot materials

In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band

InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

In the last decade several prototypes of intermediate band solar cells (IBSCs) have been manufactured. So far, most of these prototypes have been based on InAs/GaAs quantum dots (QDs) in order to implement the IB material. The key operation principles of the IB theory are two photon sub-bandgap (SBG) photocurrent, and output voltage preservation, and both have been experimentally demonstrated at low temperature. At room temperature (RT), however, thermal escape/relaxation between the conduction band (CB) and the IB prevents voltage preservation. To improve this situation, we have produced and characterized the first reported InAs/AlGaAs QD-based IBSCs. For an Al content of 25% in the host material, we have measured an activation energy of 361 meV for the thermal carrier escape. This energy is about 250 meV higher than the energies found in the literature for InAs/GaAs QD, and almost 140 meV higher than the activation energy obtained in our previous InAs/GaAs QD-IBSC prototypes including a specifically designed QD capping layer. This high value is responsible for the suppression of the SBG quantum efficiency under monochromatic illumination at around 220 K. We suggest that, if the energy split between the CB and the IB is large enough, activation energies as high as to suppress thermal carrier escape at room temperature (RT) can be achieved. In this respect, the InAs/AlGaAs system offers new possibilities to overcome some of the problems encountered in InAs/GaAs and opens the path for QD-IBSC devices capable of achieving high efficiency at RT.

Virtual-bound, filamentary and layered states in a box-shaped quantum dot of square potential form the exact numerical solution of the effective mass Schrodinger equation

The effective mass Schrodinger equation of a QD of parallelepipedic shape with a square potential well is solved by diagonalizing the exact Hamiltonian matrix developed in a basis of separation-of-variables wavefunctions. The expected below bandgap bound states are found not to differ very much from the former approximate calculations. In addition, the presence of bound states within the conduction band is confirmed. Furthermore, filamentary states bounded in two dimensions and extended in one dimension and layered states with only one dimension bounded, all within the conduction band which are similar to those originated in quantum wires and quantum wells coexist with the ordinary continuum spectrum of plane waves. All these subtleties are absent in spherically shaped quantum dots, often used for modeling.

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means of quantum dot (QD) superlattices. This novel photovoltaic concept allows the collection of a wider range of the sunlight spectrum in order to provide higher cell photocurrent while maintaining the open-circuit voltage (VOC) of the cell. In this work, we analyze InAs/GaAsN QD-IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (JL) versus VOC was measured under varied concentrated light intensity and temperature. We found that the VOC of the cell at 20 K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.

Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell

It has been proposed that the use of self-assembled quantum dot (QD) arrays can break the Shockley-Queisser efficiency limit by extending the absorption of solar cells into the low-energy photon range while preserving their output voltage. This would be possible if the infrared photons are absorbed in the two sub-bandgap QD transitions simultaneously and the energy of two photons is added up to produce one single electron-hole pair, as described by the intermediate band model. Here, we present an InAs/Al 0.25Ga 0.75As QD solar cell that exhibits such electrical up-conversion of low-energy photons. When the device is monochromatically illuminated with 1.32 eV photons, open-circuit voltages as high as 1.58 V are measured (for a total gap of 1.8 eV). Moreover, the photocurrent produced by illumination with photons exciting the valence band to intermediate band (VB-IB) and the intermediate band to conduction band (IB-CB) transitions can be both spectrally resolved. The first corresponds to the QD inter-band transition and is observable for photons of energy mayor que 1 eV, and the later corresponds to the QD intra-band transition and peaks around 0.5 eV. The voltage up-conversion process reported here for the first time is the key to the use of the low-energy end of the solar spectrum to increase the conversion efficiency, and not only the photocurrent, of single-junction photovoltaic devices. In spite of the low absorption threshold measured in our devices - 0.25 eV - we report open-circuit voltages at room temperature as high as 1.12 V under concentrated broadband illumination.

Wide-bandgap InAs/InGaP quantum-dot intermediate band solar cells

Current prototypes of quantum-dot intermediate band solar cells suffer from voltage reduction due to the existence of carrier thermal escape. An enlarged sub-bandgap EL would not only minimize this problem, but would also lead to a bandgap distribution that exploits more efficiently the solar spectrum. In this work we demonstrate InAs/InGaP QD-IBSC prototypes with the following bandgap distribution: EG = 1.88 eV, EH = 1.26 eV and EL > 0.4 eV. We have measured, for the first time in this material, both the interband and intraband transitions by means of photocurrent experiments. The activation energy of the carrier thermal escape in our devices has also been measured. It is found that its value, compared to InAs/GaAs-based prototypes, does not follow the increase in EL. The benefits of using thin AlGaAs barriers before and after the quantum-dot layers are analyzed.

Quantum dot parameters determination from quantum-efficiency measurements

The energy spectrum of the confined states of a quantum dot intermediate band (IB) solar cell is calculated with a simplified model. Two peaks are usually visible at the lowest energy side of the subbandgap quantum-efficiency spectrum in these solar cells. They can be attributed to photon absorption between well-defined states. As a consequence, the horizontal size of the quantum dots can be determined, and the conduction (valence) band offset is also determined if the valence (conduction) offset is known.

Biotin-avidin sandwich elisa with specific human isotypes IgG1 and IgG4 for Culicidae mosquito blood meal identification from an epizootic yellow fever area in Brazil

With a view toward investigating the feeding behavior of Culicidae mosquitoes from an area of epizootic yellow fever transmission in the municipalities of Garruchos and Santo Antônio das Missões, Rio Grande do Sul State, Brazil, specimens were collected by aspiration from September 2005 to April 2007. The engorged females were submitted to blood meal identification by enzyme-linked immunosorbent assay (ELISA). A total of 142 blood-engorged samples were examined for human or monkey blood through species-specific IgG. Additional tests for specificity utilizing isotypes IgG1 and IgG4 of human monoclonal antibodies showed that only anti-human IgG1 was effective in recognizing blood meals of human origin. The results indicated a significant difference (p = 0.027) in detection patterns in samples of Haemagogus leucocelaenus recorded from human blood meals at Santo Antônio das Missões, which suggests some degree of exposure, since it was an area where epizootic outbreaks have been reported.

Detection of anti-Toxoplasma gondii antibodies in experimentally and naturally infected non-human primates by Indirect Fluorescence Assay (IFA) and indirect ELISA

The Indirect Fluorescence Assay (IFA) and the indirect ELISA were comparatively used to detect IgG and IgM antibodies for Toxoplasma gondii in experimentally and naturally infected primates. In the experimentally infected group, antibodies of diagnostic value were detected at day 9 post-infection (PI) with the IFA (IgG and IgM) and with IgG-ELISA. IgM-ELISA detected antibodies for T. gondii starting at day 3 PI until the end of the experiment (102 days PI). Of the 209 naturally infected sera tested, from many zoos of State of Sao Paulo, 64.59 and 67.94% were positive in the IgG-IFA test and IgG-ELISA respectively. IgM-ELISA test detected seropositivity in 52.63% of the sera although IgM-IFA test detected it in only in 0.96% of the samples. The differential toxoplasmosis diagnosis was accomplished with Neospora caninum by IFA, observing 61 (29.2%) seropositive animals for this parasite and 149 (70.8%) negative. Sixty animals were positive for both T. gondii and N. caninum. Pneumonia, splenomegaly, and intestinal ulcers were macroscopically observed. Unremarkable interstitial pneumonia, enteritis, colitis, splenitis, and glomerulitis were microscopically observed. The immunohistochemical stain could not detect the presence of T. gondii in the tissues of the animals infected experimentally.

Reactivity, photolability, and computational studies of the ruthenium nitrosyl complex with a substituted cyclam fac-[Ru(NO)Cl(2)(kappa(3)N(4),N(8),N(11)(1-carboxypropyl)cyclam)]Cl center dot H(2)O

Chemical reactivity, photolability, and computational studies of the ruthenium nitrosyl complex with a substituted cyclam, fac-[Ru(NO)Cl(2)(kappa(3)N(4),N(8),N(11)(1-carboxypropyl)cyclam)]Cl center dot H(2)O ((1-carboxypropyl) cyclam = 3-(1,4,8,11-tetraazacyclotetradecan-1-yl) propionic acid)), (I) are described. Chloride ligands do not undergo aquation reactions (at 25 degrees C, pH 3). The rate of nitric oxide (NO) dissociation (k(obs-NO)) upon reduction of I is 2.8 s(-1) at 25 +/- 1 degrees C (in 0.5 mol L(-1) HCl), which is close to the highest value found for related complexes. The uncoordinated carboxyl of I has a pK(a) of similar to 3.3, which is close to that of the carboxyl of the non coordinated (1-carboxypropyl) cyclam (pK(a) = 3.4). Two additional pK(a) values were found for I at similar to 8.0 and similar to 11.5. Upon electrochemical reduction or under irradiation with light (lambda(irr) = 350 or 520 nm; pH 7.4), I releases NO in aqueous solution. The cyclam ring N bound to the carboxypropyl group is not coordinated, resulting in a fac configuration that affects the properties and chemical reactivities of I, especially as NO donor, compared with analogous trans complexes. Among the computational models tested, the B3LYP/ECP28MDF, cc-pVDZ resulted in smaller errors for the geometry of I. The computational data helped clarify the experimental acid-base equilibria and indicated the most favourable site for the second deprotonation, which follows that of the carboxyl group. Furthermore, it showed that by changing the pH it is possible to modulate the electron density of I with deprotonation. The calculated NO bond length and the Ru/NO charge ratio indicated that the predominant canonical structure is [Ru(III)NO], but the Ru-NO bond angles and bond index (b.i.) values were less clear; the angles suggested that [Ru(II)NO(+)] could contribute to the electronic structure of I and b.i. values indicated a contribution from [Ru(IV)NO(-)]. Considering that some experimental data are consistent with a [Ru(II)NO(+)] description, while others are in agreement with [Ru(III)NO], the best description for I would be a linear combination of the three canonical forms, with a higher weight for [Ru(II)NO(+)] and [Ru(III)NO].