Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications.rnThe first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co2MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound.rnA major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. Few studies have been reported on thermoelectric properties of p-type Heusler compounds. Therefore, this thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi1−xMxSn and CoTi1−xMxSb (where M = Sc, V and 0 ≤ x ≤ 0.2) were synthesized and investigated theoretically and experimentally with respect to electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The pure compounds showed n-type behavior, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 μV/K (at 350 K) was obtained for NiTi0.26Sc0.04Zr0.35Hf0.35Sn, which is one of the highest values for p-type thermoelectric compounds based on Heusler alloys up to now. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi0.3Zr0.35Hf0.35Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk sensitive HAXPES. The linear behavior of the spectra close to εF proves the bulk origin of Dirac-cone type density of states. Furthermore, a systematic study on the optical and transport properties of PtYSb is presented. The compound exhibits promising thermoelectric properties with a high figure of merit (ZT = 0.2) and a Hall mobility μh of 300 cm2/Vs at 350 K.rnThe last part of this thesis describes the linear dichroism in angular-resolved photoemission from the valence band of NiTi0.9Sc0.1Sn and NiMnSb. High resolution photoelectron spectroscopy was performed with an excitation energy of hν = 7.938 keV. The linear polarization of the photons was changed using an in-vacuum diamond phase retarder. Noticeable linear dichroism is found in the valence bands and this allows for a symmetry analysis of the contributing states. The differences in the spectra are found to be caused by symmetry dependent angular asymmetry parameters, and these occur even in polycrystalline samples without preferential crystallographic orientation.rnIn summary, Heusler compounds with 1:1:1 and 2:1:1 stoichiometry were synthesized and examined by chemical and physical methods. Overall, this thesis shows that the combination of first-principle calculations, transport measurements and high resolution high energy photoelectron spectroscopy analysis is a very powerful tool for the design and development of new materials for a wide range of applications from spintronic applications to thermoelectric applications.rn

Hard x-ray photoelectron spectroscopy of bulk and thin films of Heusler compounds

X-ray photoemission spectroscopy (XPS) is one of the most universal and powerful tools for investigation of chemical states and electronic structures of materials. The application of hard x-rays increases the inelastic mean free path of the emitted electrons within the solid and thus makes hard x-ray photoelectron spectroscopy (HAXPES) a bulk sensitive probe for solid state research and especially a very effective nondestructive technique to study buried layers.rnThis thesis focuses on the investigation of multilayer structures, used in magnetic tunnel junctions (MTJs), by a number of techniques applying HAXPES. MTJs are the most important components of novel nanoscale devices employed in spintronics. rnThe investigation and deep understanding of the mechanisms responsible for the high performance of such devices and properties of employed magnetic materials that are, in turn, defined by their electronic structure becomes feasible applying HAXPES. Thus the process of B diffusion in CoFeB-based MTJs was investigated with respect to the annealing temperature and its influence on the changes in the electronic structure of CoFeB electrodes that clarify the behaviour and huge TMR ratio values obtained in such devices. These results are presented in chapter 6. The results of investigation of the changes in the valence states of buried off-stoichiometric Co2MnSi electrodes were investigated with respect to the Mn content α and its influence on the observed TMR ratio are described in chapter 7.rnrnMagnetoelectronic properties such as exchange splitting in ferromagnetic materials as well as the macroscopic magnetic ordering can be studied by magnetic circular dichroism in photoemission (MCDAD). It is characterized by the appearance of an asymmetry in the photoemission spectra taken either from the magnetized sample with the reversal of the photon helicity or by reversal of magnetization direction of the sample when the photon helicity direction is fixed. Though recently it has been widely applied for the characterization of surfaces using low energy photons, the bulk properties have stayed inaccessible. Therefore in this work this method was integrated to HAXPES to provide an access to exploration of magnetic phenomena in the buried layers of the complex multilayer structures. Chapter 8 contains the results of the MCDAD measurements employing hard x-rays for exploration of magnetic properties of the common CoFe-based band-ferromagnets as well as half-metallic ferromagnet Co2FeAl-based MTJs.rnrnInasmuch as the magnetoresistive characteristics in spintronic devices are fully defined by the electron spins of ferromagnetic materials their direct measurements always attracted much attention but up to date have been limited by the surface sensitivity of the developed techniques. Chapter 9 presents the results on the successfully performed spin-resolved HAXPES experiment using a spin polarimeter of the SPLEED-type on a buried Co2FeAl0.5Si0.5 magnetic layer. The measurements prove that a spin polarization of about 50 % is retained during the transmission of the photoelectrons emitted from the Fe 2p3/2 state through a 3-nm-thick oxide capping layer.rn

Influence of defects and disorder on anomalous Hall effect and spin Seebeck effect on permalloy and Heusler compounds

In dieser Arbeit wurden dünne Schichten von Heusler-Verbindungen hergestellt und auf ihre Transporteigenschaften hin untersucht.rnDer Anomale Hall-Effekt (AHE) ist dabei von besonderem Interesse. Er ist ein seit langer Zeit bekannter, jedoch noch nicht vollständig verstandener Transport-Effekt. Die meisten Veröffentlichungen theoretischer Arbeiten konzentrieren sich auf den Einfluss eines bestimmten Beitrags zum AHE. Tatsächlich gemessene experimentelle Daten können jedoch oft nicht in Einklang mit idealisierten Annahmen gebracht werden. rnDie vorliegende Arbeit diskutiert die Ergebnisse, welche aus Messungen von Materialien mit niedrigem Restwiderstand erhalten wurden. rnrnAls prototypische Materialien wurden hier hyphenation Heusler-Verbindungen untersucht. Als Material mit einer komplexen Topologie der Fermi-Fläche zeichnet sich dort der Einfluss von Defekten und der Unordnung der Kristallstruktur deutlich ab.rnrnDurch Verwendung von Filmen mit unterschiedlichem Grad der Unordnung können verschiedene Streumechanismen unterschieden werden. Für Co$_{2}$FeSi$_{0.6}$Al$_{0.4}$ and Co$_{2}$FeGa$_{0.5}$Ge$_{0.5}$ zeigt sich ein positiver AHE bei einer Unordnung vom Typ B2 und bei einer induzierten temperaturabh"angigen Streuung, wo hingegen eine Typ DO$_{3}$-Unordnung zusammen mit anderen möglichen intrinsischen Beiträgen einen negativen Effekt hervorruft.rnrnDarüber hinaus wurden die magneto-optische Kerr-Effekte (MOKE) dieser Verbindungen untersucht. Hierfür wurden Beiträge erster Ordnung als Funktion der intrinsischen und extrinsischen Parameter qualitativ analysiert. Auf den Einfluss der kristallinen Ordnung auf Beiträge zweiter Ordnung des MOKE-Signals wird ebenfalls eingegangen.rnrnDes Weiteren wurden dünne Schichten der Heusler-Verbindung Co$_{2}$MnAl auf MgO- und Si-Subs-traten (beide (100)) mit Hochfrequenz-Mag-netron-Sputtern erzeugt. Die zusammensetzung sowie die magnetischen und Transport-Eigenschaften wurden hinsichtlich unterschiedlicher Abscheidebedingungen systematisch untersucht.rnrnInsbesondere zeigt der AHE-Widerstand ein außerordentliches temperaturunabhängiges Verhalten in einem Bereich moderater Magnetfeldstärken von 0 bis 0.6,T. Hierf"ur wurde der nicht-diagonale Transport bei Temperaturen bis zu 300,$^{circ}$C analysiert. Die Daten zeigen die Eignung des Materials für Hall-Sensoren auch oberhalb der Raumtemperatur.rnrnJüngst wurde der Spin Seebeck-Effekt (SSE) entdeckt. Der Effekt aus dem Bereich der Spin-Kaloritronik erzeugt eine Spin-Spannung'' aufgrund eines Temperaturgradienten in magnetischen Materialien. Hier werden vorläufige Messungen des SSE in Ni$_{80}$Fe$_{20}$ und in Heusler-Verbindungen präsentiert.rn

Spectroscopic investigations of functional bulk and thin film Heusler alloys

Functional and smart materials have gained large scientific and practical interest in current research and development. The Heusler alloys form an important class of functional materials used in spintronics, thermoelectrics, and for shape memory alloy applications. An important aspect of functional materials is the adaptability of their physical properties. In this work functional polycrystalline bulk and epitaxial thin film Heusler alloys are characterized by means of spectroscopic investigation methods, X-ray magnetic circular dichroism (XMCD) and energy dispersive X-ray analysis (EDX). With EDX the homogeneity of the samples is studied extensively. For some cases of quaternary compounds, for example Co2(MnxTi1−x)Sn and Co2(Mn0.5Dy0.5)Sn, an interesting phase separation in two nearly pure ternary Heusler phases occurs. For these samples the phase separation leads to an improvement of thermoelectric properties. XMCD as the main investigation method was used to study Co2TiZ (Z = Si, Sn, and Sb), Co2(MnxTi1−x)Si, Co2(MnxTi1−x)Ge, Co2Mn(Ga1−xGex), Co2FeAl, Mn2VAl, and Ni2MnGa Heusler compounds. The element-specific magnetic moments are calculated. Also, the spin-resolved unoccupied density of states is determined, for example giving hints for half-metallic ferromagnetism for some Co-based compounds. The systematic change of the magnetic moments and the shift of the Fermi energy is a proof that Heusler alloys are suitable for a controlled tailoring of physical properties. The comparison of the experimental results with theoretical predictions improves the understanding of complex materials needed to optimize functional Heusler alloys.

57 Fe and 119 Sn Mössbauer studies on new Heusler compounds for spintronic applications

Seit der Entwicklung einer großen Vielfalt von Anwendungsmöglichkeiten der Spintronik auf Basis von Heusler Verbindungen innerhalb der letzten Dekade kann der Forschungsfortschritt an dieser Material Klasse in einer Vielzahl von Publikationen verfolgt werden. Eine typische Heusler Verbindung X2YZ besteht aus zwei Übergangsmetallen (X, Y) und einem Hauptgruppenelement (Z). Diese Arbeit berichtet von Heusler Verbindungen mit besonderem Augenmerk auf deren potentielle halbmetallische Eigenschaften und davon insbesondere solche, die eine richtungsabhängige magnetische Anisotropie (perpendicular magnetic anisotropy- PMA) zeigen könnten. PMA ist insbesondere für Spin transfer Torque (STT) Bauelemente von großem Interesse und tritt in tetragonalrnverzerrten Heusler Verbindungen auf. Bei STT-Elementen werden mittels spinpolarisierter Ströme die magnetische Orientierung von magnetischen Schichten beeinflusst.rnDie signifikantesten Ergebnisse dieser Arbeit sind: die Synthese neuer kubischen Heusler Phasen Fe2YZ, die theoretisch als tetragonal vorausgesagt wurden (Kapitel 1), die Synthese von Mn2FeGa, das in der tetragonal verzerrten Struktur kristallisiert und Potential für STT Anwendungen zeigt (Kapitel 2); die Synthese von Fe2MnGa, das einen magnetischen Phasenübergang mit exchange-bias (EB) Effekt zeigt, der auf einer Koexistenz von ferromagnetischen (FM) und antiferromagnetischen (AFM) Phasen beruht (Kapitel 3); Schlussendlich wird in Kapitel 4 die Synthese von Mn3−xRhxSn diskutiert, in welcher insbesondere tetragonales Mn2RhSn als potentielles Material für Anwendungen in derrnSpintronik vorgestellt wird.rnIn dieser Arbeit wurden hauptsächlich Heusler Verbindungen mit mößbaueraktiven Elementen 57Fe und 119Sn, synthetisiert und untersucht. Im Falle der hier untersuchten Heusler Verbindungen spielt die Charakterisierung durch Mößbauer Spektroskopie eine entscheidende Rolle, da Heusler Verbindungen meistens ein gewisses Maß an Fehlordnung aufweisen, welche deren magnetischen und strukturellen Eigenschaften beeinflussen kann. Die Art der Fehlordnung jedoch kann nur schwer durch standard Pulver-Röntgendiffraktion bestimmt werden, weshalb wir die Vorteile der Mößbauer Spektroskopie als lokale Methode nutzen, um den Typ und den Grad der Fehlordnung aufzuklären. rnDiese Arbeit ist wie folgt gegliedert:rnIn Kapitel 1 wurden die neuen, kubisch-weichferromagnetischen Heuslerphasen Fe2NiGe, Fe2CuGa und Fe2CuAl synthetisiert und charakterisiert. In vorangegangenen theoretischen Studien wurde für deren Existenz in tetragonaler Heuslerstruktur vorhergesagt.rnUngeachtet dessen belegten unsere experimentellen Untersuchungen, dass diese Verbindungen hauptsächlich in der kubischen invers Heusler(X-) struktur mit unterschiedlichen Anteilen an atomarer Fehlordnung kristallisieren. Alle Verbindungen sind weiche Ferromagneten mit hoher Curietemperatur bis zu 900K, weswegen alle als potentielle Materialien für magnetische Anwendungen geeignet sind. In Kapitel 2 wurde Mn2FeGa synthetisiert. Es zeigte sich, dass Mn2FeGa nach Temperatur Nachbehandlung bei 400°C die invers tetragonale Struktur (I4m2) annimmt. Theoretisch wurde die Existenz in der inversen kubischen Heuslerstruktur vorausgesagt. Abhängig von den Synthesebedingungen ändern sich die magnetischen und strukturellen Eigenschaften von Mn2FeGa eklatant. Deshalb ändert sich die Kristallstruktur von M2FeGa bei Temperung bei 800 °C zu einer pseudokubischen Cu3Au-artigen Struktur, in welcher Fe- und Mn-Atome statistisch verteilt vorliegen. Dieser Übergang der Kristallstrukturen wurde durch Mößbauer Spektroskopie anhand des Vorliegens oder Fehlens der Quadrupolaufspaltung im Falle der invers tetragonalen bzw. pseudokubischen Modifikation nachgewiesen. In Kapitel 3 wurde Fe2MnGa ebenfalls erfolgreich synthetisiert und durch verschiedene Methoden charakterisiert. Der Zusammenhang von Kristallstruktur und magnetischen Eigenschaften wurde durch verschiedene Temperungskonditionen und mechanischer Behandlung untersucht. Der Schwerpunkt lag auf einer geschmolzenen Probe ohne weitere Temperung, die einen FM-AFM Phasenübergang zeigte. Diese magnetische Phasenumwandlung führt zu einem starken EB-Verhalten, welches seinen Ursprung hauptsächlich in der Koexistenz von FM- und AFM-Phasen unterhalb der FMAFM- Übergangstemperatur hat. Kapitel 4 ist den neuen Mn-basierten Heusler-Verbindungen Mn3−xRhxSn gewidmet, bei denen wir versuchten, durch den Austausch von Mn durch das größere Rh eine Umwandlung zu einer tetragonalen Struktur von den hexagonalen Mn3Sn-Struktur zu erreichen. Als interessant stellten sich Mn2RhSn und Mn2.1Rh0.9Sn heraus, da sie aus nur einer Phase vorzuliegen scheinen, wohingegen die anderen Verbindungen aus gemischten Phasen mit gleichzeitiger starken Fehlordnung bestehen. Im abschließenden Anhang wurden die Fehlordnung und gelegentliche Mischphasen einer großen Auswahl von Mn3−xFexGa Materialien mit 1≤x≤3, dokumentiert.rn

Thermoelectric properties in phase-separated half-Heusler materials

The conversion of dissipated heat into electricity is the basic principle of thermoelectricity. In this context, half-Heusler (HH) compounds are promising thermoelectric (TE) materials for waste heat recovery. They meet all the requirements for commercial TE applications, ranging from good efficiencies via environmentally friendliness to being low cost materials. This work focused on the TE properties of Ti0.3Zr0.35Hf0.35NiSn-based HH materials. This compound undergoes an intrinsic phase separation into a Ti-poor and Ti-rich HH phase during a rapid solidification process. The resulting dendritic microstructure causes a drastic reduction of the thermal conductivity, leading to higher TE efficiencies in these materials. The TE properties and temperature dependence of the phase-separated Ti0.3Zr0.35Hf0.35NiSn compound were investigated. The TE properties can be adjusted depending on the annealing treatment. The extension of annealing time for 21 days at 1000 °C revealed a reduction of the thermal conductivity and thus an enhancement of the TE performance in this sample. An increase of annealing temperature caused a change of the phase fraction ratio in favor of the Ti-rich phase, leading to an improvement of the electronic properties. rnInspired by the TE properties of the Ti0.3Zr0.35Hf0.35NiSn HH compound, the performance of different n- and p-type materials, realized via site substitution with donor and acceptor elements was examined. The fabrication of a TE n- and p-type material pair based on one starting compound can guarantee similar TE and mechanical properties and is enormous beneficial for device engineering. As donor dopants V, Nb and Sb were tested. Depending on the lattice position small doping levels were sufficient to attain distinct improvement in their TE efficiency. Acceptor-induced doping with Sc, Y and Co caused a change in the transport behavior from n- to p- type conduction, revealing the highest Seebeck coefficients obtained in the MNiSn system. rnThen, the long-term stability of an exemplary n- and p-type HH compound was proven. Surprisingly, the dendritic microstructure can be maintained even after 500 cycles (1700 h) from 373 to 873 K. The TE performance of both n- and p-type materials showed no significant change under the long-term treatment, indicating the extraordinary temperature stability of these compounds. Furthermore both HH materials revealed similar temperature-dependence of their mechanical properties. This work demonstrates the excellent suitability of phase-separated HH materials for future TE applications in the moderate temperature range.rn

Heusler compounds for thermoelectric applications

The demands for energy is leading to social and political conflicts in the world. For example, the limited resources of fossil fuels causing a dependence on the oil conveying countries in the world, leading to political discords. One way to save energy is to increase the efficiency of a process. In the field of thermoelectricity waste heat is used to produce electricity, this leads to an improvement of the efficiency. Heusler compounds with C1b structure with the general formula XY Z (X, Y = transition metal, Z = main group element) are in focus of the present thermoelectric research. Their mechanical and thermal stability is exceptional in comparison to the commonly used thermoelectric materials. The possibility to substitute small amounts of elements from the parent compound without destructing the lattice structure allows tuning the electronic properties. This tunability also allows to avoid the use of toxic and expensive elements. The reported thermoelectric Heusler compounds exhibit high electrical conductivity and moderate values of the Seebeck coefficients, which lead to a high powerfactor. The disadvantage of Heusler compounds is their high thermal conductivity. Introducing mass disorder on the X-site lattice is one effective way to produce additional phonon scattering and with it to decrease the thermal conductivity. Another approach is to implement a nano or micro structure in the thermoelectric material. This can be achieved by phase separation, composite materials, pulverization with additional spark plasma sintering or by a complex lattice structure. In the first part of this work, the influence of element substitutions on the Zr0.5Hf0.5NiSn system was investigated, to obtain the knowledge on how to optimize the electronic properties of the Heusler compounds with C1b structure. In line with this, the change of the electronic structure was investigated and a possible mechanism is predicted. In the second part of this work, the phenomenon of phase separation was investigated. First, by applying a phase separation in the well-known system Co2MnSn and subsequently by systematic investiga- tions on the TixZryHfzNiSn. In the third part, the results from the previous parts before were used to produce and explain the best reported Heusler compound with C1b structure exhibiting a Figure of Merit of ZT= 1.2 at 830 K.

Investigation of acceptor dopants in ZrNiSn half-Heusler materials

Thermoelectric generators (TEG) are solid state devices and are able to convert thermal energy directly into electricity and thus could play an important role in waste heat recovery in the near future. Half-Heusler (HH) compounds with the general formula MNiSn (M = Ti, Zr, Hf) built a promising class of materials for these applications because of their high Seebeck coefficients, their environmentally friendliness and their cost advantage over conventional thermoelectric materials.rnrnMuch of the existing literature on HH deals with thermoelectric characterization of n-type MNiSn and p-type MCoSb compounds. Studies on p-type MNiSn-based HHs are far fewer in number. To fabricate high efficient thermoelectric modules based on HH compounds, high performance p-type MNiSn systems need to be developed that are compatible with the existing n-type HH compounds. This thesis explores synthesis strategies for p-type MNiSn based compounds. In particular, the efficacy of transition metals (Sc, La) and main group elements (Al, Ga, In) as acceptor dopants on the Sn-site in ZrNiSn, was investigated by evaluating their thermoelectric performance. The most promising p-type materials could be achieved with transition metal dopants, where the introduction of Sc on the Zr side, yielded the highest Seebeck coefficient in a ternary NiSn-based HH compound up to this date. Hall effect and band gap measurements of this system showed, that the high mobility of minority carrier electrons dominate the transport properties at temperatures above 500 K. It could be shown that this is the reason, why n-type HH are successful TE materials for high temperature applications, and that p-types are subjected to bipolar effects which will lead to diminished thermoelectric efficiencies at high temperatures.rnrnTo complement the experimental investigations on different metal dopants and their influence on the TE properties of HH compounds, numerical solutions to the Boltzmann transport equation were used to predict the optimum carrier concentration where the maximum TE efficiency occurs for p-type HH compounds. The results for p-type samples showed that can not be treated within a simple parabolic band model approach, due to bipolar and multi-band effects.rnrnThe parabolic band model is commonly used for bulk TE materials. It is most accurate when the transport properties are dominated by one single carrier type. Since the transport properties of n-type HH are dominated by only one carrier type (high mobility electrons), it could be shown, that the use of a simple parabolic band model lead to a successful prediction of the optimized carrier concentration and thermoelectric efficiency in n-type HH compounds. rn

Noncollinear magnetism in Mn2RhSn Heusler compound

Heusler compounds is a large class of materials, which exhibits diverse fundamental phenomena, together with the possibility of their specific tailoring for various engineering demands. Present work discusses the magnetic noncollinearity in the family of noncentrosymmetric ferrimagnetic Mn2-based Heusler compounds. Based on the obtained experimental and theoretical results, Mn2YZ Heusler family is suspected to provide promising candidates for the formation of the skyrmion lattice. The work is focused on Mn2RhSn bulk polycrystalline sample, which serves as a prototype. It crystallizes in the tetragonal noncentrosymmetric structure (No. 119, I-4m2), which enables the anisotropic Dzyaloshinskii-Moriya (DM) exchange coupling. Additional short-range modulation, induced by the competing nearest and next-nearest interplanes Heisenberg exchange, is suppressed above the 80 K. This allows to develop the long-range modulations in the ideal ferrimagnetic structure within the ab crystallographic planes, and thus, favors to the occurrence of the skyrmion lattice within the temperature range of (80 ≤ T ≤ 270) K. The studies of Mn2RhSn were expandedrnto the broad composition range and continued on thin film samples.

Thermoelectric performance of p-type TiCoSb half-Heusler compounds - Intrinsic phase separation and charge carrier concentration optimization as key to high efficiency

The world's rising demand of energy turns the development of sustainable and more efficient technologies for energy production and storage into an inevitable task. Thermoelectric generators, composed of pairs of n-type and p-type semiconducting materials, di¬rectly transform waste heat into useful electricity. The efficiency of a thermoelectric mate¬rial depends on its electronic and lattice properties, summarized in its figure of merit ZT. Desirable are high electrical conductivity and Seebeck coefficients, and low thermal con¬ductivity. Half-Heusler materials are very promising candidates for thermoelectric applications in the medium¬ temperature range such as in industrial and automotive waste heat recovery. The advantage of Heusler compounds are excellent electronic properties and high thermal and mechanical stability, as well as their low toxicity and elemental abundance. Thus, the main obstacle to further enhance their thermoelectric performance is their relatively high thermal conductivity.rn rnIn this work, the thermoelectric properties of the p-type material (Ti/Zr/Hf)CoSb1-xSnx were optimized in a multistep process. The concept of an intrinsic phase separation has recently become a focus of research in the compatible n-type (Ti/Zr/Hf)NiSn system to achieve low thermal conductivities and boost the TE performance. This concept is successfully transferred to the TiCoSb system. The phase separation approach can form a significant alternative to the previous nanostructuring approach via ball milling and hot pressing, saving pro¬cessing time, energy consumption and increasing the thermoelectric efficiency. A fundamental concept to tune the performance of thermoelectric materials is charge carrier concentration optimization. The optimum carrier concentration is reached with a substitution level for Sn of x = 0.15, enhancing the ZT about 40% compared to previous state-of-the-art samples with x = 0.2. The TE performance can be enhanced further by a fine-tuning of the Ti-to-Hf ratio. A correlation of the microstructure and the thermoelectric properties is observed and a record figure of merit ZT = 1.2 at 710°C was reached with the composition Ti0.25Hf0.75CoSb0.85Sn0.15.rnTowards application, the long term stability of the material under actual conditions of operation are an important issue. The impact of such a heat treatment on the structural and thermoelectric properties is investigated. Particularly, the best and most reliable performance is achieved in Ti0.5Hf0.5CoSb0.85Sn0.15, which reached a maximum ZT of 1.1 at 700°C. The intrinsic phase separation and resulting microstructure is stable even after 500 heating and cooling cycles.

Quelques Juifs et demi-juifs

par André Spire

Baiṭrege tzur zelbsṭprifung und gebeṭe in moncherleie angelegenheiṭen tzum gebroich demiṭhiger und wohrheiṭsliebender juden

Digitalisat der Ausg. London, 1841

Versuch einer Charakteristik Otto Weiningers : Aus: Quelques Juifs et Demi-Juifs [1928]

Fritz Lehner