掺铒磷酸盐玻璃波导放大器的特性研究

研究了掺铒磷酸盐玻璃波导放大器的特性。利用重叠因子将980nm光抽运的掺铒玻璃波导放大器四能级模型的速率-传输方程进行化简，在考虑上转换效应和放大自发发射的情况下．利用数值模拟的方法，得到了掺铒玻璃波导放大器的增益与Er^3+离子浓度、抽运功率、波导长度等参量之间的关系曲线；同时模拟出放大自发发射曲线并与实验测量结果进行比较。结果表明在考虑上转换效应和放大自发发射的情况下,理论结果和实验测量结果是一致的。同时看到，选择合适的铒离子浓度是制作掺铒玻璃波导放大器的关键；并且为了全面发挥掺铒玻璃波导放大器的性能

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.

NUMERICAL ANALYSIS OF A NOVEL 980nm MICROCAVITY SEMICONDUCTOR OPTICAL AMPLIFIER WITH HIGH GAIN AND LOW NOISE

A novel microcavity semiconductor optical amplifier ( MCSOA) was proposed by incorporating top and bottom distributed Bragg reflectors ( DBRs) into the waveguide structure of conventional traveling-wave semiconductor optical amplifiers(TW-SOAs). The incoming( outgoing) light beam incidented onto (escaped from) the waveguide structure at a oblique angle through two optical windows, where the top DBR was etched away, and anti-reflection coating was deposited. The light beams inside the optical cavity were reflected repeatedly between two DBRs and propagated along waveguide in a zigzag optical path. The performance of the MCSOA was systematically investigated by extensive numerical simulation based on a traveling-wave model by taking into account the comprehensive effects of DBRs on both the amplification of signals and the filtering of spontaneous emission( SE). Our results show that the MCSOA is capable of achieving a fiber-to-fiber gain as high as 40dB and a low noise figure is less than 3.5dB.

Numerical analysis of gain saturation, noise figure, and carrier distribution for quantum-dot semiconductor-optical amplifiers

The gain saturation behaviors and noise figure are numerically analyzed for quantum-dot semiconductor optical amplifiers (QD-SOAs). The carrier and photon distributions in the longitudinal direction as well as the photon energy dependent facet reflectivity are accounted in the rate equations, which are solved with output amplified spontaneous emission spectrum as iterative variables. The longitudinal distributions of the occupation probabilities and spectral-hole burning are presented for electrons in the excited and ground states of quantum dots. The saturation output power 19.7 dBm and device gain 20.6 dB are obtained for a QD-SOA with the cavity length of 6 rum at the bias current of 500 mA. The influences of them electron intradot relaxation time and the QD capture time on the gain spectrum are simulated with the relaxation time of 1, 30, and 60 ps and capture time of 1, 5, and 10 ps. The noise figure as low as 3.5 dB is expected due to the strong polarization sensitive spontaneous emission. The characteristics of gain saturation and noise figure versus input signal power for QD-SOAs are similar to that of semiconductor. linear optical amplifiers with gain clamping by vertical laser fields.

Monolithically integrated transceiver with novel Y-branch by bundle integrated waveguide for fibre optic gyroscope

A novel Y-branch based monolithic transceiver with a superluminescent diode and a waveguide photodiode (Y-SDL-PD) is designed and fabricated by the method of bundle integrated waveguide (BIG) as the scheme for monolithic integration and angled Y-branch as the passive bi-directional waveguide. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10mW at 120mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than 1 dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x 8 degrees, resulting in good fibre coupling.

Detailed model and investigation of gain saturation and carrier spatial hole burning for a semiconductor optical amplifier with gain clamping by a vertical laser field

A detailed model for semiconductor linear optical amplifiers (LOAs) with gain clamping by a vertical laser field is presented, which accounts the carrier and photon density distribution in the longitudinal direction as well as the facet reflectivity. The photon iterative method is used in the simulation with output amplified spontaneous emission spectrum in the wide band as iterative variables. The gain saturation behaviors and the noise figure are numerically simulated, and the variation of longitudinal carrier density with the input power is presented which is associated with the ON-OFF state of the vertical lasers. The results show that the LOA can have a gain spectrum clamped in a wide wavelength range and have almost the same value of noise figure as that of conventional semiconductor optical amplifiers (SOAs). Numerical results also show that an LOA can have a noise figure about 2 dB less than that of the SOA gain clamped by a distributed Bragg reflector laser.

Photon iterative numerical technique for steady-state simulation of gain-clamped semiconductor optical amplifiers

The photon iterative numerical technique, which chooses the outputs of the amplified spontaneous emission spectrum and lasing mode as iteration variables to solve the rate equations, is proposed and applied to analyse the steady behaviour of conventional semiconductor optical amplifiers (SOAs) and gain-clamped semiconductor optical amplifiers (GCSOAs). Numerical results show that the photon iterative method is a much faster and more efficient algorithm than the conventional approach, which chooses the carrier density distribution of the SOAs as the iterative variable. It is also found that the photon iterative method has almost the same computing efficiency for conventional SOAs and GCSOAs.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Dual-wavelength distributed feedback laser for CWDM based on non-identical quantum well

Using non-identical quantum wells as the active material, a new distributed-feed back laser is fabricated with period varied Bragg grating. The full width at half maximum of 115 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 mu m and 1.53 mu m are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.

Polarization insensitive gain medium with hybrid strained quantum well

A polarization insensitive gain medium for optical amplifiers has been fabricated. The active layer is a structure with alternate tensile and compressive strain quantum wells. The waveguide is made into a taper with angled facets. In the experiment we found that the structure can suppress the lasing and decrease the polarization sensitivity. The gain imbalance between transverse electric and transverse magnetic gains is small, and 0.1 dB is obtained at a driving current of 100 mA. The full-width at half-maximum of amplified spontaneous emission is 40 nm within large current. (C) 2002 Elsevier Science Ltd. All rights reserved.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

染料掺杂聚合物薄膜放大自发发射和受激发射的研究

随着有机／聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功，有机／聚合物电致发光材料的优异的光电性能、低廉的生产成本、简单的加工工艺、宽广的选材范围和良好的机械性能等优点极大地吸引科学家们的研究兴趣，并开始了有机／聚合物发光薄膜的放大的自发发射和受激发射行为的研究。有机分子和聚合物的诸多如易得、廉价、结构多样、功能易调节、大的横截面积、高的荧光量子效率和低的自吸收等优点使其制成的激光器在未来光纤通讯领域中呈现了诱人的应用前景。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机／聚合物固体激光研究领域的三大特点。本论文以研究有机材料的激光特性为目的，通过对有机染料DCJTB和三芳胺取代1，8-蔡酰亚胺齐聚物掺杂聚合物薄膜的放大的自发发射和受激发射特性的研究，探讨实现低闭值、高增益光泵浦有机聚合物激光的方法及影响器件性能的因素，阐明放大自发发射的工作机制，为进一步探讨电泵浦有机聚合物激光器提供材料体系和理论依据。1、研究了DCJTB掺杂聚合物薄膜的放大自发发射特性，分析了光泵浦条件下光谱窄化的放大自发发射机制，对ASE增益和损耗进行了讨论和数值拟合，并对增益方程进行了饱和修正。DCJTB：PS薄膜具有较低的闺值（0．16mJ·Pulse~(_1)·cm-2）、高的增益系数（40．72cm-1）、低的损耗值2．49cm一l和高的荧光量子效率（70．4％），其波导增益的波长分布呈明显的洛仑兹分布，增益饱和是均匀展宽的。与DCM比较发现，自由体积是决定材料性能的重要因素，大的自由体积有利于实现低闭值、高增益。我们的研究结果表明，DCJTB是非常好的激光介质材料。2、从ASE的发射波长、ASE闭值、增益和损耗四个技术指标出发，详细研究了激发光波长、聚合物基体、旋涂速度及基片等对DCJTB：PS薄膜放大自发发射（ASE）的影响，短的激发波长和合适的基体材料可以显著地降低闭值和提高增益，薄膜厚度和基片也对ASE性能有很大影响。利用琢lord镜面体系，研究了DCJTB染料掺杂相列向液晶体系的分布反馈激光特性，在电场作用下，可以有效地对TE、TM两种模式的输出强度进行调解。3、把电子传输／发光有机小分子材料Alq3掺杂到DCJTB和C545T掺杂聚合物薄膜，研究了它们的放大自发发射特性。通过在不同激发光波长激发下不同Alq3掺杂浓度对ASE性能影响的研究，发现掺杂Alq3显著地降低了闭值，增加了增益和减小了损耗。由于Alq3是一种良好的半导体有机发光材料，Alq3的引入对电泵浦有机聚合物激光器的研究具有重要的意义。4、研究了三种在4位氨基位置引入不同三芳胺功能基团的红光1，8-蔡酞亚胺齐聚物的放大自发发射特性，研究结果表明，三芳胺取代1，8蔡酞亚胺齐聚物具有低阂值、高增益和低损耗的特点，显示了较小的浓度淬灭效应，即使掺杂浓度高到60％仍可以观察到放大的自发发射现象，表明三芳胺取代1，8茶酞亚胺是一类非常有应用前景的有机半导体激光材料体系。

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Finite temperature dense matter studies on next-generation light sources

The construction of short-pulse tunable soft x-ray free electron laser sources based on the self-amplified spontaneous emission process will provide a major advance in capability for dense plasma-related and warm dense matter (WDM) research. The sources will provide 10(13) photons in a 200-fs duration pulse that is tunable from approximately 6 to 100 nm. Here we discuss only two of the many applications made possible for WDM that has been severely hampered by the fact that laser-based methods have been unavailable because visible light will not propagate at electron densities of n(e) greater than or equal to 10(22) cm(-3). The next-generation light sources will remove these restrictions.

Gain saturation of the Ni-like X-ray lasers

Driven by a double 75 ps pulse with 2.2 ns separation, saturated operation of nickel-like Ag, In, Sn, and Sm X-ray lasers have been demonstrated with only 75 J drive energy on target. The variation of X-ray laser output with target length is found to fit well to a simple model for an amplified spontaneous emission (ASE) laser including saturation. Small signal gains of similar to 10 cm(-1), effective gain length products of similar to 18, and saturation irradiance of (1-5)x 10(10) W/cm(2) are measured for these lasers using a fitting procedure. (C) 1998 Elsevier Science B.V. All rights reserved.