Um estudo da quebra espontânea de simetria usando quartetos BRST

A Quebra Espontânea de Simetria (QES) tem sido discutida em muitos cenários, tendo resultados importantes na física Teórica de Partículas, sendo motivo de extensa pesquisa e com variadas aplicações. Neste trabalho, será apresentado um modelo alternativo baseado na Ação de Fujikawa usando quartetos BRST. No primeiro capítulo, todo o ferramental para a análise da QES é discutido partindo da definição em nível clássico e por fim no regime quântico, usando o conceito de ação efetiva. A técnica de quantização de campos de calibre no U(1), presente no eletromagnetismo, foi abordada, usando o cálculo dos propagadores e seus respectivos diagramas de Feynman. Foi estudado em conjunto com esse assunto, o conceito de campos fantasmas de Fadeev-Popov e Simetria-BRST. O mecanismo de Higgs é explorado em nível quântico, sendo feita um estudo dos rearranjos dos graus de liberdade do sistema. No segundo capítulo, as propriedades dos quartetos-BRST são estudadas, bem como suas considerações sobre simetria, quando aplicadas na ação de Fujikawa usando dois cenários: (i) quando a simetria não é quebrada. (ii) A simetria é quebrada. E por fim é feita uma análise sobre os graus de liberdade do sistema.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Nanotube-based passively mode-locked Ytterbium-pumped Raman laser

Over the past decades mode-locked fibre lasers have been extensively refined and developed, with most research efforts focussing on employing rare-earth doped fibres as the active elements [1]. This presents the problem that operation is limited to regions of the spectrum where such elements exhibit gain [1]. Raman amplification in silica fibre is an attractive way to overcome this spectral limitation, with gain available across the entire transparency window (300 nm - 2300 nm) [2-4]. There have been a number of reports utilising Raman gain in ultrashort pulse sources [2-4], however none using a broadband saturable absorber, such as carbon nanotubes [5-7] and graphene [7-9]. A broadband saturable absorber is an essential pre-requisite in order to fully exploit the wavelength flexibility provided by the Raman gain in short pulse mode-locked fiber lasers. © 2011 IEEE.

Nanotube-based passively mode-locked Raman laser

We demonstrate passive mode-locking of a Raman fiber laser using a nanotube-based saturable absorber. The normal dispersion cavity generates highly-chirped 500 ps pulses that are compressed down to 2 ps, with 1.4 kW peak power. © 2011 OSA.

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.