The effect of an insoluble surfactant on the skin friction of a bubble

In this paper, we develop a novel moving mesh method suitable for solving axisymmetric free-boundary problems, including the Marangoni effect induced by surfactant or temperature variation. This method employs a body-fitted grid system where the gas-liquid interface is one line of the grid system. We model the surfactant equation of state with a non-linear Langmuir law, and, for simplicity, we limit ourselves to the situation of an insoluble surfactant. We solve complicated dynamic boundary conditions accurately on the gas-liquid interface in the framework of finite-volume methods. Our method is used to study the effect of a surfactant on the skin friction of a bubble in a uniaxial flow. For the limiting case where the surface diffusivity is zero, the effect of a tangential stress generated by the surface tension gradient, allows us to explain a new phenomenon in high concentration regimes: larger surface tension, but also larger deformation. Furthermore, this condition leads to the formation of boundary layers and flow separation at high Reynolds numbers. The influence of these complex flow patterns is examined. © 2005 Elsevier SAS. All rights reserved.

Influence of insoluble surfactant on the deformation and breakup of a bubble or thread in a viscous fluid

The influence of surfactant on the breakup of a prestretched bubble in a quiescent viscous surrounding is studied by a combination of direct numerical simulation and the solution of a long-wave asymptotic model. The direct numerical simulations describe the evolution toward breakup of an inviscid bubble, while the effects of small but non-zero interior viscosity are readily included in the long-wave model for a fluid thread in the Stokes flow limit. The direct numerical simulations use a specific but realizable and representative initial bubble shape to compare the evolution toward breakup of a clean or surfactant-free bubble and a bubble that is coated with insoluble surfactant. A distinguishing feature of the evolution in the presence of surfactant is the interruption of bubble breakup by formation of a slender quasi-steady thread of the interior fluid. This forms because the decrease in surface area causes a decrease in the surface tension and capillary pressure, until at a small but non-zero radius, equilibrium occurs between the capillary pressure and interior fluid pressure. The long-wave asymptotic model, for a thread with periodic boundary conditions, explains the principal mechanism of the slender thread's formation and confirms, for example, the relatively minor role played by the Marangoni stress. The large-time evolution of the slender thread and the precise location of its breakup are, however, influenced by effects such as the Marangoni stress and surface diffusion of surfactant. © 2008 Cambridge University Press.

Influence of surfactant solubility on the deformation and breakup of a bubble or capillary jet in a viscous fluid

In a previous study [M. Hameed, J. Fluid Mech. 594, 307 (2008)] the authors investigated the influence of insoluble surfactant on the evolution of a stretched, inviscid bubble surrounded by a viscous fluid via direct numerical simulation of the Navier-Stokes equations, and showed that the presence of surfactant can cause the bubble to contract and form a quasisteady slender thread connecting parent bubbles, instead of proceeding directly toward pinch-off as occurs for a surfactant-free bubble. Insoluble surfactant significantly retards pinch-off and the thread is stabilized by a balance between internal pressure and reduced capillary pressure due to a high concentration of surfactant that develops during the initial stage of contraction. In the present study we investigate the influence of surfactant solubility on thread formation. The adsorption-desorption kinetics for solubility is in the diffusion controlled regime. A long-wave model for the evolution of a capillary jet is also studied in the Stokes flow limit, and shows dynamics that are similar to those of the evolving bubble. With soluble surfactant, depending on parameter values, a slender thread forms but can pinch-off later due to exchange of surfactant between the interface and exterior bulk flow. © 2009 American Institute of Physics.

Studies on the phase diagram of the surfactant/1-pentanol water ternary system II: The liquid crystalline phase

The phase behavior of liquid crystalline in the ternary system of dodecyl dimethyl ammonium hydroxyl propyl sulfonate(DDAHPS)/1-pentanol(C5H11OH)/water deuteron (D2O) has been investigated by polarizing optical microscopy, H-2 NMR spectroscopy methods. The results indicate that two kinds of liquid crystals (the lamellar, and the hexagonal) exist in the liquid crystalline phase region. In this paper, we also use the polarized Raman spectroscopy method to measure the values of the order/disorder parameters and the values of the environment polarity parameters for the samples selected from the liquid crystalline phase region, and compare these two parameters of the samples with those of solid state DDAHPS and liquid state pentan-1-ol.

In Vitro Surfactant and Perfluorocarbon Aerosol Deposition in a Neonatal Physical Model of the Upper Conducting Airways

Objective: Aerosol delivery holds potential to release surfactant or perfluorocarbon (PFC) to the lungs of neonates with respiratory distress syndrome with minimal airway manipulation. Nevertheless, lung deposition in neonates tends to be very low due to extremely low lung volumes, narrow airways and high respiratory rates. In the present study, the feasibility of enhancing lung deposition by intracorporeal delivery of aerosols was investigated using a physical model of neonatal conducting airways. Methods: The main characteristics of the surfactant and PFC aerosols produced by a nebulization system, including the distal air pressure and air flow rate, liquid flow rate and mass median aerodynamic diameter (MMAD), were measured at different driving pressures (4-7 bar). Then, a three-dimensional model of the upper conducting airways of a neonate was manufactured by rapid prototyping and a deposition study was conducted. Results: The nebulization system produced relatively large amounts of aerosol ranging between 0.3 +/- 0.0 ml/min for surfactant at a driving pressure of 4 bar, and 2.0 +/- 0.1 ml/min for distilled water (H(2)Od) at 6 bar, with MMADs between 2.61 +/- 0.1 mu m for PFD at 7 bar and 10.18 +/- 0.4 mu m for FC-75 at 6 bar. The deposition study showed that for surfactant and H(2)Od aerosols, the highest percentage of the aerosolized mass (similar to 65%) was collected beyond the third generation of branching in the airway model. The use of this delivery system in combination with continuous positive airway pressure set at 5 cmH(2)O only increased total airway pressure by 1.59 cmH(2)O at the highest driving pressure (7 bar). Conclusion: This aerosol generating system has the potential to deliver relatively large amounts of surfactant and PFC beyond the third generation of branching in a neonatal airway model with minimal alteration of pre-set respiratory support.

Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires

GaN nanowires have been grown with and without In as an additional source. The effects of In surfactant on the crystal quality and photoluminescence property of GaN nanowires are reported for the first time. X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. The results show that introducing a certain amount of In surfactant during the growth process can improve the crystal quality of the GaN nanowires, and enhance the photolurainescence of them. In addition, the as-prepared GaN nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication.

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (1 0 0) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1-xInxN might have occurred. (C) 2002 Elsevier Science B.V. All rights reserved.

Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy

We observe "ghost" islands formed on terraces during homoepitaxial nucleation of GaN. We attribute the ghost islands to intermediate nucleation states, which can be driven into "normal" islands by scanning tunneling microscopy. The formation of ghost islands is related to excess Ga atoms on the surface. The excess Ga also affect island number density: by increasing Ga coverage, the island density first decreases, reaching a minimum at about 1 monolayer (ML) Ga and then increases rapidly for coverages above 1 ML. This nonmonotonic behavior points to a surfactant effect of the Ga atoms.

Improvement of Ge self-organized quantum dots by use of Sb surfactant

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].