I must walk through the gate : an ontological necessity

This research is a self-study into my life as an athlete, elementary school teacher, leamer, and as a teacher educator/academic. Throughout the inquiry, I explore how my beliefs and values infused my lived experiences and ultimately influenced my constructivist, humanist, and ultimately my holistic teaching and learning practice which at times disrupted the status quo. I have written a collection of narratives (data generation) which embodied my identity as an unintelligent student/leamer, a teacher/learner, an experiential learner, a tenacious participant, and a change agent to name a few. As I unpack my stories and hermeneutically reconstruct their intent, I question their meaning as I explore how I can improve my teaching and learning practice and potentially effect positive change when instructing beginning teacher candidates at a Faculty of Education. At the outset I situate my story and provide the necessary political, social, and cultural background information to ground my research. I follow this with an in depth look at the elements that interconnect the theoretical framework of this self-study by presenting the notion of writing at the boundaries through auto ethnography (Ellis, 2000; Ellis & Bochner, 2004) and writing as a method of inquiry (Richardson, 2000). The emergent themes of experiential learning, identity, and embodied knowing surfaced during the data generation phase. I use the Probyn' s (1990) .. metaphor of locatedness to unpack these themes and ponder the question, Where is experience located? I deepen the exploration by layering Drake's (2007) KnowlDo/Be framework alongside locatedness and offer descriptions of learning moments grounded in pedagogical theories. In the final phase, I introduce thirdspace theory (Bhabha, 1994; Soja, 1996) as a space that allowed me to puzzle educational dilemmas and begin to reconcile the binaries that existed in my life both personally, and professionally. I end where I began by revisiting the questions that drove this study. In addition, Ireflect upon the writing process and the challenges that I encountered while immersed in this approach and contemplate the relevance of conducting a self-study. I leave the reader with what is waiting for me on the other side of the gate, for as Henry James suggested, "Experience is never limited, and it is never complete."

Algal and protozoan response to Holocene climate change and anthropogenic impact: a case study from Sluice Pond, MA

Sluice Pond is a small (18 ha) and deep (Zmax 20.0 m) partially meromictic, pond in Lynn, Massachusetts that contains a diverse dinocyst record since the early Holocene. High dinocyst concentrations, including morphotypes not previously described, as well as the preservation of several specimens of cellulosic thecae are attributed to low dissolved oxygen (DO) in the basin. The fossil protozoan record supports the interpretation- thecamoebians were unable to colonize the basin until the middle Holocene and only became abundant when the drought-induced lowstand oxygenated the bottom waters. Protozoans tolerant of low DO became abundant through the late Holocene as water levels rose and cultural eutrophication produced a sharp increase in biochemical oxygen demand (BOD) beginning in the 17th century. Recent sediments contain a dominance of Peridinium willei, indicating cultural eutrophication and the planktonic ciliate Codonella cratera and the thecamoebian Cucurbitella tricuspis in the deep basin. Above the chemocline however, a diverse difflugiid thecamoebian assemblage is present.

Letter to the Port Dalhousie and Thorold Railway for work the sluice at the aqueduct, on the hillside

Letter to the Port Dalhousie and Thorold Railway for work the sluice at the aqueduct, on the hillside. This is signed by R. Collier, Aug. 28, 1856.

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.

Gate 2010: la Universitat de Girona a l'Espai Europeu d'Educació d'Educació Superior

La progressiva creació de l'Espai Europeu d'Educació Superior porta la Universitat de Girona a un procés de reflexió i renovació de l'organització acadèmica i docent dels estudis. Volem que la societat gironina participi activament en la definició de les noves titulacions que han d'oferir la formació adequada perquè els estudiants assoleixin amb èxit les competències professionals que el món laboral demana. Aquestes pàgines tenen l'objectiu de divulgar, a grans trets, el perquè, el què, el com i el quan de la reforma de l'educació superior que estem començant