Response time measurement in flow induced signal generation on semiconductors

Measurable electrical signal is generated when a gas flows over a variety of solids, including doped semiconductors, even at the modest speed of a few meters per second. The underlying mechanism is an interesting interplay of Bernoulli's principle and the Seebeck effect. The electrical signal depends on the square of Mach number (M) and is proportional to the Seebeck coefficient (S) of the solids. Here we present experimental estimate of the response time of the signal rise and fall process, i.e. how fast the semiconductor materials respond to a steady flow as soon as it is set on or off. A theoretical model is also presented to understand the process and the dependence of the response time on the nature and physical dimensions of the semiconductor material used and they are compared with the experimental observations. (c) 2007 Elsevier B.V. All rights reserved.

Study on Young's modulus and microhardness of carbon nanotubes reinforced copper nanocomposite

Carbon nanotubes (CNTs) were discovered by Iijima in 1991 as the fourth form of carbon. Carbon nanotubes are the ultimate form of the carbon fibre because of its high Young's modulus in the order of 1 TPa, which is very useful for load transfer in nanocomposites. In the present work, CNT/Cu nanocomposites were fabricated by the powder metallurgy technique, and after extrusion of the nanocomposites, bright field transmission electron microscopic studies were carried out. From the transmission electron microscopic images obtained, a novel method of ascertaining the Young's modulus of multiwalled CNTs is worked out in the present paper, which turns out to be 0.94 TPa, which is consistent with experimental results. Furthermore, an attempt is made to investigate the microhardness of copper by reinforcing it with multiwalled CNTs. There is an increase in hardness by twofold in CNT/Cu nanocomposites as compared to pure Cu matrix. This is due to high relative density, even distribution of CNTs and proper bonding at CNT/Cu interfaces.

Diffusion of Be, Co and Mn impurities in compound semiconductors and glassy carbon studied by the modified radiotracer technique

The main method of modifying properties of semiconductors is to introduce small amount of impurities inside the material. This is used to control magnetic and optical properties of materials and to realize p- and n-type semiconductors out of intrinsic material in order to manufacture fundamental components such as diodes. As diffusion can be described as random mixing of material due to thermal movement of atoms, it is essential to know the diffusion behavior of the impurities in order to manufacture working components. In modified radiotracer technique diffusion is studied using radioactive isotopes of elements as tracers. The technique is called modified as atoms are deployed inside the material by ion beam implantation. With ion implantation, a distinct distribution of impurities can be deployed inside the sample surface with good con- trol over the amount of implanted atoms. As electromagnetic radiation and other nuclear decay products emitted by radioactive materials can be easily detected, only very low amount of impurities can be used. This makes it possible to study diffusion in pure materials without essentially modifying the initial properties by doping. In this thesis a modified radiotracer technique is used to study the diffusion of beryllium in GaN, ZnO, SiGe and glassy carbon. GaN, ZnO and SiGe are of great interest to the semiconductor industry and beryllium as a small and possibly rapid dopant hasn t been studied previously using the technique. Glassy carbon has been added to demonstrate the feasibility of the technique. In addition, the diffusion of magnetic impurities, Mn and Co, has been studied in GaAs and ZnO (respectively) with spintronic applications in mind.

Localised modes due to impurities in III–V semiconductors

Local mode frequencies due to substitutional impurities in some III–V semiconductors are calculated using Green functions on the mass defect approximation and compared with experimental results.

Polymer composite/nanocomposite processing and its effect on the electrical properties

One of the biggest challenges when considering polymer nanocomposites for electrical insulation applications lies in determining their electrical properties accurately, which in turn depend on several factors, primary being dispersion of particles in the polymer matrix. With this background, this paper reports an experimental study to understand the effects of different processing techniques on the dispersion of filler particles in the polymer matrix and their related effect on the dielectric properties of the composites. Polymer composite and nanocomposite samples for the study were prepared by mixing 10% by weight of commercially available TiO2 particles of two different sizes in epoxy using different processing methods. A considerable effect of the composite processing method could be seen in the dielectric properties of nanocomposites.

Synthesis, magnetic and electrical properties of Fe-containing SiO2 nanocomposite

Nanocrystalline Fe powders were synthesized by transmetallation reaction and embedded in silica to form Fe-SiO2 nanocomposite. Thermomagnetic study of the as-prepared Fe sample indicates the presence of Fe3O4 and Fe particles. Oxidation studies of Fe and Fe-SiO2 show an increased thermal stability of Fe-SiO2 nanocomposite over pure Fe. The Fe-SiO2 shows an enhanced oxidation temperature (i.e., 780 K) and a maximum saturation magnetization value of (135 emu/g) with 64 wt.% of Fe content in silica. Electrical and dielectric behaviour of the Fe-SiO2 nanocomposite has been investigated as a function of temperature and frequency. Low frequency ac conductivity and dielectric constants were found to be influenced by desorptions of chemisorbed moisture. High saturation magnetization, thermal stability, frequency-dependent conductivity and low power loss make Fe-silica a promising material for high frequency applications. (C) 2010 Elsevier B.V. All rights reserved.

Studies on a nanocomposite solid polymer electrolyte with hydrotalcite as a filler

We have prepared a new nanocomposite polymer electrolyte using nanoparticles of hydrotalcite, an anionic clay, as the filler. Hydrotalcite has the chemical composition [M-1-x(2+) M-x(3+) (OH)(2)](x+) [A(x/n)(n-)center dot mH(2)O] where M2+ is a divalent cation (e.g. Mg2+, Ni2+, Co2+,etc.) and M3+ is a trivalent cation (e.g. Al3+, Fe3+, Cr3+, etc.). A(n-) is an anion intercalated between the positively charged double hydroxide layers. The nanoparticles of [Mg0.67Al0.33 (OH)(2)] [(CO3)(0.17)center dot mH(2)O] were prepared by the co-precipitation method (average particle size as observed by TEM similar to 50 nm) and were doped into poly(ethylene glycol) PEG (m.w.2000) complexed with LiCIO4. Samples with different wt.% of hydrotalcite were prepared and characterized using XRD, DSC, TGA, impedance spectroscopy and NMR. Ionic conductivity for the pristine sample, similar to 7.3 x 10(-7) S cm(-1), was enhanced to a maximum of = 1.1 x 10(-5) S cm(-1) for 3.6 wt.% nanoparticle doped sample. We propose that the enhancement of ionic conductivity is caused by percolation effects of the high conductivity paths provided by interfaces between the nanoparticles and the polymer electrolyte. (C) 2010 Elsevier B.V. All rights reserved.

Dielectric Properties of Epoxy-Al2O3 Nanocomposite System for Packaging Applications

In recent times, there has been an ever-growing need for polymer-based multifunctional materials for electronic packaging applications. In this direction, epoxy-Al2O3 nanocomposites at low filler loadings can provide an excellent material option, especially from the point of view of their dielectric properties. This paper reports the dielectric characteristics for such a system, results of which are observed to be interesting, unique, and advantageous as compared to traditionally used microcomposite systems. Nanocomposites are found to display lower values of permittivity/tan delta over a wide frequency range as compared to that of unfilled epoxy. This surprising observation has been attributed to the interaction between the epoxy chains and the nanoparticles, and in this paper this phenomenon is analyzed using a dual layer interface model reported for polymer nanocomposites. As for the other dielectric properties associated with the nanocomposites, the nano-filler loading seems to have a significant effect. The dc resistivity and ac dielectric strength of the nanocomposites were observed to be lower than that of the unfilled epoxy system at the investigated filler loadings, whereas the electrical discharge resistant properties showed a significant enhancement. Further analysis of the results obtained in this paper shows that the morphology of the interface region and its characteristics decide the observed interesting dielectric behaviors.

Electromagnetic wave propagation at the interface between two polar semiconductors

The interface between two polar semiconductors can support three types of phonon-plasmon-polariton modes propagating in three well-defined frequency windows ??1?[min(?1,?3),?R1], ??2?[max(?2,?4),?R2], and ??3?[min(?2,?4),?R3]. The limiting frequencies ?1,2,3,4 are defined by ?1(?)=0, ?2(?)=0, and ?R1,2,3 by ?1(?)+?2(?)=0, where ?i(?) are dielectric functions of the two media with i=1,2. The dispersion, decay distances, and polarization of the three modes are discussed. The variation of the limiting frequencies with the interface plasma parameter ???p22/?p12 reveals an interesting feature in the dispersion characteristics of these modes. For the interfaces for which the bulk coupled phonon-plasmon frequencies of medium 1 are greater than the LO frequency or are less than the TO frequency of medium 2, there exist two values of ?=?1 and ?2(

Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors

The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.

Intermetallic Ti2Ni/TiNi nanocomposite by rapid solidification

Nanoscale dispersions of intermetallic Ti2Ni particles in an ordered TiNi intermetallic matrix have been produced by rapid solidification processing of near equiatomic TiNi alloys containing small amount of Si utilising the principle of kinetic competition in the undercooled liquid, A detailed characterisation of the microstructures obtained by different processing conditions was carried out to establish the trend of the refinement of the scale of microstructure. The observed microstructural conditions are rationalised in terms of a metastable phase diagram and the Uhlmann, Chalmers and Jackson theory of the trapping of second phase particles by a moving interface.

SrB4O7:Bi2VO5.5 - A novel nanocomposite

Glass composites of strontium tetraborate, SrB4O7 (SBO) with bismuth vanadate, Bi2VO5.5 (BiV) of the composition (1-x) SBO-x BN (0 less than or equal to x less than or equal to 0.75), have been synthesized. X-ray powder diffraction and electron microscopy indicate as-quenched composites to be amorphous and the annealed samples showed the presence of nanometer sized particles of BN dispersed in the glassy matrix of SBO. The dielectric constant of these composites increases with increase in the volume fraction of BiV, at 300 K. The measured dielectric constant of the composite very nearly obeys the Maxwell's relationship. Optical transmission studies confirm a steady shirt in the optical absorption edge towards longer wavelengths with increase in x