929 resultados para S-matrix method
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Nesta dissertação, foram investigadas as propriedades magnéticas e magnetocalóricas nos compostos intermetálicos de terras-raras Gd1-xDyxAl2 (x = 0, 0.25, 0.50, 0.75 e 1.00) usando abordagens teórica e experimental. Do ponto de vista teórico, a série Gd1-xDyxAl2 foi descrita através de um modelo para o hamiltoniano magnético, incluindo o efeito Zeeman, interação de troca e a anisotropia de campo elétrico cristalino. As entropias da rede e eletrônica foram consideradas nas aproximações de Debye e de gás de elétrons livres, respectivamente. A parte experimental inclui a preparação do material, sua caracterização e medidas das quantidades magnéticas e magnetocalóricas. Os resultados experimentais e os cálculos teóricos da variação adiabática da temperatura (ΔTad) e da variação isotérmica da entropia (ΔS T), sob variações de campo magnético ao longo da direção de fácil magnetização, estão de bom acordo. O efeito da aplicação do campo magnético ao longo de uma direção de difícil magnetização foi estudado e as componentes da magnetização em função da temperatura foram investigadas. Também foi observado que a temperatura de reorientação de spin, TR, diminui quando a intensidade do campo magnético aumenta. Além disso, as concentrações molares ótimas de um material híbrido formado pelos compostos Gd1-xDyxAl2 (x = 0, 0.25, 0.50, 0.75 e 1.00) foram simuladas usando um método numérico de matriz proposto por Smaili e Chahine. O compósito apresenta um bom intervalo de temperatura para um refrigerador magnético de 60 até 170 K.
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基于非均匀膜理论提出一种存在微缺陷的介质基底的折射率分层模型,将基底依次分为表面层、亚表面层和体材料层,其中表面层和亚面层分别等效为折射率服从统计分布的非均匀膜,将它们分别再次细分为N1和N2个子层,每一子层均视为均匀介质膜.应用光学薄膜特征矩阵法对其进行理论分析,并对单层介质膜的光学性能进行数值计算.研究结果表明:基底的表面和亚表面微缺陷改变了薄膜和基底的等效折射率,导致了准Brewster角和组合反射率与理想情形的偏离.同时这些微缺陷也改变了光在薄膜和基底中的传播特性,因此反射相移和相位差均偏离理想情
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采用Berreman特征矩阵方法,通过数值计算研究了双折射薄膜的反射、透射等光谱响应特性。依据电磁场理论的电场分量、磁场分量的界面连续条件,推导了光波在各向异性双轴薄膜中的Berreman转移矩阵,用以分析含有各向异性介质层的复杂薄膜系统的光学性质。这些矩阵递推关系包含了界面处的多点反射,适用于一般的各向异性的多层膜系统,包括入射媒质或基底为各向异性的情况。在文中给出了各向同性入射媒质双轴各向异性膜层一各向同性基底薄膜系统的计算结果,验证了该计算方法的可行性,以此作为进一步研究各向异性薄膜和相关光学薄膜器
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A model for refractive index of stratified dielectric substrate was put forward according to theories of inhomogeneous coatings. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. Both the surface layer (separated into N-1 sublayers of uniform thickness) and subsurface layer (separated into N-2 sublayers of uniform thickness), whose refractive indices have different statistical distributions, are equivalent to inhomogeneous coatings, respectively. And theoretical deduction was carried Out by employing characteristic matrix method of optical coatings. An example of mathematical calculation for optical properties of dielectric coatings had been presented. The computing results indicate that substrate subsurface defects can bring about additional bulk scattering and change propagation characteristic in thin film and Substrate. Therefore, reflectance, reflective phase shift and phase difference of an assembly of coatings and substrate deviate from ideal conditions. The model will provide some beneficial theory directions for improving optical properties of dielectric coatings via substrate surface modification. (c) 2005 Elsevier B.V. All rights reserved.
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A model for refractive index of stratified dielectric substrate was presented according to inhomogeneous coatings theories. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. The former two layers were equivalent to inhomogeneous coatings. Theoretical deduction was executed by employing the characteristic matrix method of optical coatings, and one mathematical calculation example was presented. The results indicate that reflectance, reflective phase shift and phase difference of polarized light deviate from ideal conditions. It shows that substrate microdefects can induce volume scattering and change propagation characteristic of light both in coatings and substrate. (c) 2005 Elsevier GmbH. All rights reserved.
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通过传输矩阵法分析了材料介电常数的变化对于单缺陷结构的磁光多层膜隔离器性能的响,并提出了一种多缺陷结构的磁光多层膜结构.同单缺陷结构相比,多缺陷结构的旋转角的频谱响应带宽有很大增加,对于材料介电常数变化的宽容性得到了一个数量级的提高.同时这种多缺陷的结构对于膜层厚度的变化和入射角度也有很好的宽容性.
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In this paper, a new type of guided-mode resonant grating (GMRG) filter with an antireflective surface called the 'moth-eye structure' for the multiple channels is presented by using rigorous coupled-wave analysis (RCWA) and the S-matrix method. Long range, low sidebands and multiple channels are found when the GMRG filters with antireflective surface are illuminated with incident polarization light. It is calculated that the multiple channel phenomenon can be shown when the depth of antireflective surface is increased. Moreover, the wavelengths of the multiple channels can be easily shifted by changing the depth of the homogenous layer which is under the antireflective surface, and the optical properties of GMRG filters such as low sideband reflection and narrow band are not badly spoiled when the depth is changed.
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In this paper, a new type of resonant Brewster filters (RBF) with surface relief structure for the multiple channels is first presented by using the rigorous coupled-wave analysis and the S-matrix method. By tuning the depth of homogeneous layer which is under the surface relief structure, the multiple channels phenomenon is obtained. Long range, extremely low sidebands and multiple channels are found when the RBF with surface relief structure is illuminated with Transverse Magnetic incident polarization light near the Brewster angle calculated with the effective media theory of sub wavelength grating. Moreover, the wavelengths of RBF with surface relief structure can be easily shifted by changing the depth of homogeneous layer while its optical properties such as low sideband reflection and narrow band are not spoiled when the depth is changed. Furthermore, the variation of the grating thickness does not effectively change the resonant wavelength of RBF, but have a remarkable effect on its line width, which is very useful for designing such filters with different line widths at desired wavelength.
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Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.
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A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.
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A new broadband filter, based on the high-order band gap in one-dimensional photonic crystal (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si, has been designed by the plane wave expansion method (PWEM) and transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-order band gaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and PC device. (c) 2007 Elsevier B.V. All rights reserved.
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The ballistic spin transport in one-dimensional waveguides with the Rashba effect is studied. Due to the Rashba effect, there are two electron states with different wave vectors for the same energy. The wave functions of two Rashba electron states are derived, and it is found that their phase depend on the direction of the circuit and the spin directions of two states are perpendicular to the circuit, with the +pi/2 and -pi/2 angles, respectively. The boundary conditions of the wave functions and their derivatives at the intersection of circuits are given, which can be used to investigate the waveguide transport properties of Rashba spin electron in circuits of any shape and structure. The eigenstates of the closed circular and square loops are studied by using the transfer matrix method. The transfer matrix M(E) of a circular arc is obtained by dividing the circular arc into N segments and multiplying the transfer matrix of each straight segment. The energies of eigenstates in the closed loop are obtained by solving the equation det[M(E)-I]=0. For the circular ring, the eigenenergies obtained with this method are in agreement with those obtained by solving the Schrodinger equation. For the square loop, the analytic formula of the eigenenergies is obtained first The transport properties of the AB ring and AB square loop and double square loop are studied using the boundary conditions and the transfer matrix method In the case of no magnetic field, the zero points of the reflection coefficients are just the energies of eigenstates in closed loops. In the case of magnetic field, the transmission and reflection coefficients all oscillate with the magnetic field; the oscillating period is Phi(m)=hc/e, independent of the shape of the loop, and Phi(m) is the magnetic flux through the loop. For the double loop the oscillating period is Phi(m)=hc/2e, in agreement with the experimental result. At last, we compared our method with Koga's experiment. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253752]
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The combination of the effective index method and the transfer matrix method is adopted to calculate the indices of quasi-TE and quasi-TM modes in a UV-written channel waveguide, and the difference between the indices is used to characterize its birefringence. The dimensions, the ratio of width to thickness, the original index of the core layer, the index of the cladding, and the index profile are all taken into account. The simulation results indicate that the birefringence decreases with increasing dimensions, ratio of width to thickness, and indices of the cladding; on the contrary, increases of the original index of the core layer and of the vertical index gradient intensified the birefringence. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
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We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 mu m. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 mu m, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3x10(-7) A/cm(2) at a bias of 0 V and 4.3x10(-5) A/cm(2) at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps. (c) 2005 American Institute of Physics.
Resumo:
We use the transfer-matrix method to research the band structures in one-dimensional photonic crystals composed of anomalous dispersion material ( saturated atomic cesium vapor). Our calculations show that that type of photonic crystal possesses an ultra-narrow photonic band gap and this band gap is tunable when altering the electron population in the atomic ground state of the anomalous dispersion material by the optical pumping method. Copyright (C) EPLA, 2007.