Analysis of basic processes inside the keyhole during deep penetration ND-YAG CW laser welding

During laser welding, the keyhole is generated by the recoil pressure induced by the evaporation processes occurring mainly on the front keyhole wall (KW). In order to characterize the evaporation process, we have measured this recoil pressure by using a plume deflection technique, where the plume generated for static conditions (i. e. with no sample displacement) is deflected by a transverse side gas jet. From the measurement of the plume deflection angle, the recoil pressure can be determined as a function of incident intensity and sample material. From these data one can estimate the pressure generated on the front KW, during laser welding. Therefore, the corresponding dynamic pressure exerted by the vapor plume expansion on the rear KW, in contact with the melt pool, can be also estimated. These pressures appear to be in close agreement with those generated by an additional side jet that has been used in previous experiments, for stabilizing the observed melt pool oscillations or fluctuations.

On the percussion drilling of SI using a 20W MOPA based YB fiber laser

A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

Intrinsic state lifetimes in Pd103 and Cd106,107

The mean-lifetimes, τ, of various medium-spin excited states in Pd103 and Cd106,107 have been deduced using the Recoil Distance Doppler Shift technique and the Differential Decay Curve Method. In Cd106, the mean-lifetimes of the Iπ=12+ state at Ex=5418 keV and the Iπ=11- state at Ex=4324 keV have been deduced as 11.4(17)ps and 8.2(7)ps, respectively. The associated β2 deformation within the axially-symmetric deformed rotor model for these states are 0.14(1) and 0.14(1), respectively. The β2 deformation of 0.14(1) for the Iπ=12+ state in Cd106 compares with a predicted β2 value from total Routhian surface (TRS) calculations of 0.17. In addition, the mean-lifetimes of the yrast Iπ=152- states in Pd103 (at Ex=1262 keV) and Cd107 (at Ex=1360 keV) have been deduced to be 31.2(44)ps and 31.4(17)ps, respectively, corresponding to β2 values of 0.16(1) and 0.12(1) assuming axial symmetry. Agreement with TRS calculations are good for Pd103 but deviate for that predicted for Cd107. © 2007 The American Physical Society.

Evidence for X(5) critical point symmetry in 128Ce

Lifetimes of excited states in 128Ce were measured using the recoil distance Doppler-shift (RDDS) and the Doppler-shift attenuation (DSAM) methods. The experiments were performed at the Wright Nuclear Structure Laboratory of Yale University. Excited states of 128Ce were populated in the 100Mo(32Si,4n) reaction at 120 MeV and the nuclear γ decay was measured with an array of eight Clover detectors positioned at forward and backward angles. The deduced yrast transition strengths together with the energies of the levels within the ground-state (gs) band of 128Ce are in agreement with the predicted values for the X(5) critical point symmetry. Thus, we suggest 128Ce as a benchmark X(5) nucleus in the mass A ≈ 130 region. © World Scientific Publishing Company.

RDM lifetime measurements in 107Cd

Lifetimes for decays linking near-yrast states in 107Cd have been measured using the recoil distance method (RDM). The nucleus of interest was populated via the 98Mo(12C,3n)107Cd fusion-evaporation reaction at an incident beam energy of 60 MeV. From the measured lifetimes, transition probabilities have been deduced and compared with the theoretical B(E2) values for limiting cases of harmonic vibrational and axially deformed rotational systems. Our initial results suggest a rotor-like behaviour for the structure based on the unnatural-parity, h11/2 orbital in 107Cd, providing further evidence for the role of this 'shape-polarizing' orbital in stabilizing the nuclear deformation in the A ∼ 100 transitional region. © 2005 IOP Publishing Ltd.

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Chemical composition and elastic strain in AlInGaN quaternary films

High-quality AlInGaN quaternary layers were grown on c-Al2O3 using a thick GaN template. A full width at half maximum of 0.075 degrees from AlInGaN(0004) rocking curve and a minimum yield of 5.6% from Rutherford backscattering/channelling spectrometry (RBS) prove the AlInGaN layer of a comparable crystalline quality with GaN layers. The chemical compositions (both of Al and In contents) of AlInGaN layers are directly obtained from RBS and elastic recoil detection analysis. The lattice parameters both in perpendicular and parallel directions are deduced from X-ray diffraction. The AlInGaN layer is found to process a compressive strain in parallel direction and a tensile strain in perpendicular direction. (c) 2006 Elsevier B.V. All rights reserved.

Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

By using the technique of elastic recoil detection (ERD), we have measured the hydrogen profiles in a-Si:H/a-Si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. The results show that hydrogen diffusion in a-Si is significantly enhanced by the action of electrical bias. The existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.

气体喷嘴反冲传输技术及在核科学中的应用

The gas-jet recoil transport technique is developed and improved as a new rapid and effective on-line and off beam method following "rabbit" apparatus in the study of short lives nuclei. It can transport the short half-life nuclear reaction products far from high radioactive area for collection and measurement at low background area. This technique has been widely used in the researches with accelerator and reactor. It is indispensable basic experimental technology and tool applied to nuclear reaction, spec...中文摘要：气体喷嘴反冲传输技术是继"跑兔"装置之后发展和完善起来的适合于短寿命核素研究的一种快速而有效的在线脱束方法。它能够将短寿命核反应产物传输至远离高辐射区的低本底场所进行收集和测量。该技术已在加速器和反应堆上得到了广泛的应用,是一种研究核反应、核谱学和合成与鉴别新元素、新核素的一种不可缺少的基本实验技术和工具。描述了气嘴系统的结构、基本原理、设计要求以及它的主要特性,特别是对系统的气体动力学机制以及各种参数对系统特性的影响等进行了讨论。最后,综述了它在核物理、核化学以及质谱学等领域的应用情况,并且给出了几个应用的典型例子。

One-electron capture with simultaneous ionization in Cq+, Oq+ (q=1-4)-Ar collisions

The ratios R-k1 of k-fold to single ionization of the target atom with simultaneous one-electron capture by the projectile have been measured for 15-480 keV/u (nu(p) = 0.8-4.4 a.u.) collisions of Cq+, Oq+ (q=1-4) with Ar, using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. The present ratios are similar to those for He+ and He2+ ion impact. The energy dependence of R-k1 shows a maximum at a certain energy, E-max. which approximately conforms to the q(1/2)-dependence scaling. For a fixed projectile state, the ratios R-k1 also vary strongly with outgoing reaction channels. The general behavior of the measured data can be qualitatively analyzed by a simple impact-parameter, independent-electron model. (C) 2009 Elsevier B.V. All rights reserved.

Single-electron capture in keV Ar15+...18++He collisions

Single-electron capture in 14 keV q(-1) Ar15+...18++He collisions is investigated both experimentally and theoretically. Partial cross sections and projectile scattering angle dependencies have been deduced from the target ion recoil momenta measured by the COLTRIMS technique. The comparison with close-coupling results obtained from a two-centre extension of the basis generator method yields good overall agreement, demonstrating the applicability of close-coupling calculations to collision systems involving highly charged ions in charge states up to 18+.

L-shell ionization accompanied by one-electron capture in Cq+, Oq+ (q=2,3)-Ne collisions

The L-shell ionization processes of a Ne gas target associated with single-electron capture by bombardment of Cq+ and Oq+ (q=2,3) are investigated using the projectile-recoil-ion coincidence method in the energy range from 80 to 400 keV/u (v(p)=1.8-4 a.u.). The cross-section ratios (R-k1) of k-fold ionization to single capture are compared with the results for He2+-Ne collisions by Dubois [Phys. Rev. A 36, 2585 (1987)]. All the velocity dependences are quite similar. The ratios increase as the projectile energy increases in the lower-energy region, reach the maxima for projectile energies around E-max=160q(1/2) keV/u, and then decrease at higher energies. These results qualitatively agree with our calculations in terms of the Bohr-Lindhard model within the independent-electron approximation.