Dielectric properties of barium magnesiotitanate ceramics, BaMg6Ti6O19

Phase-pure samples of barium magnesiotitanate, BaMg6Ti6O19 (BMT) are prepared by the wet chemical `gel-carbonate' method wherein the formation of BMT is complete below 950 degrees C as a result of the reaction between nanoparticles of BaCO3, MgO and TiO2. BMT powders are sintered at 1350-1450 C to dense ceramics. Extensive melting is noticed when the bulk composition falls between 0.4MgTiO(3)+0.6BaTiO(3)) and (0.6MgTiO(3)+0.4BaTiO(3)) along the MgTiO3-BaTiO3 tie-line in BaO-MgO-TiO2, phase diagram. Dielectric properties of sintered (BMT) ceramics have been investigated which showed epsilon similar or equal to 39 at 2 GHz, quality factor Q >= 10,000 and positive temperature coefficient of dielectric constant around 370 ppm degrees C-1.

Lasten sitoutuneisuus toimintaan : kvantitatiivinen havainnointitutkimus

Children s involvement is a key quality factor in Early Years Education. As a process variable it concentrates on children s actions and experiences. The involved children are operating in their zone of proximal development. The aim of this study was to find out how the children involved themselves in the Finnish day care centres. The problems of the study were: (1) how the children are involved in different situations between the hours 8.00 and 12.00, (2) how do the skills of children whose involvement level is high differ from the skills of children whose involvement level is low and (3) how do the learning environments of the children whose involvement level is high differ from the learning environments of the children whose involvement level is low? The research method was observation and children s involvement levels were assessed using LIS-YC Scale. In addition, the kindergarten teachers evaluated the children s skills and the team workers did the evaluations of the educational settings. The data used in this study was a part of the Orientaation lähteillä research. The 802 children, who took part in the study, were from 48 different groups of eight different municipalities in Central Uusimaa. There were 18358 observations of children s involvement and the quantitative data was analyzed using correlation, cross tabulation and t-test. Children s involvement was an average at a moderate level. The involvement levels were the highest during playing time and adult guided tasks and lowest during eating and basic care situations. The level of involvement was higher if the children were adaptable, proactive, self-motivated and good players. The involvement lever was lower if the children needed some special care. The children s involvement is supported if the educators had at least once a week a meeting and if children s confidence and identity construction was frequently considered in educational discussions. Furthermore, the appreciation of the ethical issues and positive atmosphere appeared to confirm the involvement. The children s involvement is decreased if the educators had been perpetually short of time or resources or there has been lack of joy and humour in the group.

Switching and release dynamics of an electrostatically actuated MEMS switch under the influence of squeeze-film damping

This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.

Analysis and design of split-capacitor resistive-inductive passive damping for LCL filters in grid-connected inverters

Grid-connected inverters require a third-order LCL filter to meet standards such as the IEEE Std. 519-1992 while being compact and cost-effective. LCL filter introduces resonance, which needs to be damped through active or passive methods. Passive damping schemes have less control complexity and are more reliable. This study explores the split-capacitor resistive-inductive (SC-RL) passive damping scheme. The SC-RL damped LCL filter is modelled using state space approach. Using this model, the power loss and damping are analysed. Based on the analysis, the SC-RL scheme is shown to have lower losses than other simpler passive damping methods. This makes the SC-RL scheme suitable for high power applications. A method for component selection that minimises the power loss in the damping resistors while keeping the system well damped is proposed. The design selection takes into account the influence of switching frequency, resonance frequency and the choice of inductance and capacitance values of the filter on the damping component selection. The use of normalised parameters makes it suitable for a wide range of design applications. Analytical results show the losses and quality factor to be in the range of 0.05-0.1% and 2.0-2.5, respectively, which are validated experimentally.

Impact of spray flux density and vacuum annealing on the transparent conducting properties of doubly doped (Sn plus F) zinc oxide films deposited using a simplified spray technique

In this investigation transparent conducting properties of as-deposited and annealed ZnO:Sn:F films deposited using different spray flux density by changing the solvent volume (10 mL, 20 mL ... 50 mL) of the starting solutions have been studied and reported. The structural analyses of the films indicate that all the films have hexagonal wurtzite structure of ZnO with preferential orientation along (002) plane irrespective of the solvent volume and annealing treatment whereas, the overall crystalline quality of the films is found to be enhanced with the increase in solvent volume as well as with annealing. This observed enhancement is strongly supported by the optical and surface morphological results. From the measurements of electrical parameters, it is seen that, the annealed films exhibit better electrical properties compared to the as-deposited ones. Annealing has caused agglomeration of grains as confirmed by the surface morphological studies. Also, the annealing process has led to an improvement in the optical transparency as well as band gap. It is found from the analyses of the characteristics of the as- deposited and annealed films that the annealed film deposited from starting solution having solvent volume of 50 mL is optimal in all respects, as it possesses all the desirable characteristics including the quality factor (1.60 x 10(-4) (Omega/sq.)(-1)). (C) 2014 Elsevier Ltd. All rights reserved.

Dielectric Impedance Studies of Poly(vinyl butyral)-Cenosphere Composite Films

In the current study, amino silane functionalized cenosphere particles was used as a reinforcing filler in poly(vinyl butyral) matrix and were made by melt blending. The changes observed in the dielectric performance of the composite films with varying weight percentage of cenosphere particle in the matrix were investigated. The dielectric property and impedance spectroscopy were evaluated as a function of applied frequency in the range of 50 Hz to 5 MHz. It is observed that, because of orientation polarization of the PVB polymer, the permittivity and impedance decrease, whereas conductivity increases. Tangent loss graph indicates that the property of the matrix is associated with geometrical fill factor and the lowest quality factor. Therefore, above 10 kHz, these composites can be considered as dielectric loss-less material. (C) 2013 Society of Plastics Engineers

Ultrasensitive mass balance based on a bulk acoustic mode single-crystal silicon resonator

A single-crystal silicon resonant bulk acoustic mass sensor with a measured resolution of 125 pg cm2 is presented. The mass sensor comprises a micromachined silicon plate that is excited in the square-extensional bulk acoustic resonant mode at a frequency of 2.182 MHz, with a quality factor exceeding 106. The mass sensor has a measured mass to frequency shift sensitivity of 132 Hz cm2 μg. The resonator element is embedded in a feedback loop of an electronic amplifier to implement an oscillator with a short term frequency stability of better than 7 ppb at an operating pressure of 3.8 mTorr. © 2007 American Institute of Physics.

Direct parameter extraction in capacitively transduced micromechanical resonators using the anti-resonance

This paper presents a method for the fast and direct extraction of model parameters for capacitive MEMS resonators from their measured transmission response such as quality factor, resonant frequency, and motional resistance. We show that these parameters may be extracted without having to first de-embed the resonator motional current from the feedthrough. The series and parallel resonances from the measured electrical transmission are used to determine the MEMS resonator circuit parameters. The theoretical basis for the method is elucidated by using both the Nyquist and susceptance frequency response plots, and applicable in the limit where CF > CmQ; commonly the case when characterizing MEMS resonators at RF. The method is then applied to the measured electrical transmission for capacitively transduced MEMS resonators, and compared against parameters obtained using a Lorentzian fit to the measured response. Close agreement between the two methods is reported herein. © 2010 IEEE.

Low loss HF band SOI wine glass bulk mode capacitive square-plate resonator

This paper reports on the design and electrical characterization of a single crystal silicon micromechanical square-plate resonator. The microresonator has been excited in the anti-symmetrical wine glass mode at a resonant frequency of 5.166 MHz and exhibits an impressive quality factor (Q) of 3.7 × 106 at a pressure of 33 mtorr. The device has been fabricated in a commercial foundry process. An associated motional resistance of approximately 50 kΩ using a dc bias voltage of 60 V is measured for a transduction gap of 2 νm due to the ultra-high Q of the resonator. This result corresponds to a frequency-Q product of 1.9 × 1013, the highest reported for a fundamental mode single-crystal silicon resonator and on par with some of the best quartz crystal resonators. The results are indicative of the superior performance of silicon as a mechanical material, and show that the wine glass resonant mode is beneficial for achieving high quality factors allowed by the material limit. © 2009 IOP Publishing Ltd.

Thin film monitoring with silicon bulk acoustic resonators

Abstract-This paper reports a single-crystal silicon mass sensor based on a square-plate resonant structure excited in the wine glass bulk acoustic mode at a resonant frequency of 2.065 MHz and an impressive quality factor of 4 million at 12 mtorr pressure. Mass loading on the resonator results in a linear downshift in the resonant frequency of this device, wherein the measured sensitivity is found to be 175 Hz cm2/μg. The silicon resonator is embedded in an oscillator feedback loop, which has a short-term frequency stability of 3 mHz (approximately 1.5 ppb) at an operating pressure of 3.2 mtorr, corresponding to an equivalent mass noise floor of 17 pg/cm2. Possible applications of this device include thin film monitoring and gas sensing, with the potential added benefits of scalability and integration with CMOS technology. © 2008 IEEE.

Anchor limited q in flexural mode resonators

This paper reports a preliminary examination of the effect of anchor geometry design on the quality factor of flexural mode resonators operating in vacuum using both FE simulation and measurements of resonator frequency response. Three types of structures have been considered in this study: an elliptical mode ring, a double ended tuning fork, and a doubly-clamped beam. We consider the relative distribution of strain energies in both the resonant structure and the connecting stem, which is indicative of the measured quality factor. The measured quality factors of the different structures are compared against each other, based on which suggestions are proposed for optimizing the anchor limited quality factor (Q) in flexural mode micromechanical resonators. ©2008 IEEE.

Study of lateral mode SOI-MEMS resonators for reduced anchor loss

MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data. © 2011 IOP Publishing Ltd.

Direct parameter extraction in feedthrough-embedded capacitive MEMS resonators

This paper presents a method for fast and accurate determination of parameters relevant to the characterization of capacitive MEMS resonators like quality factor (Q), resonant frequency (fn), and equivalent circuit parameters such as the motional capacitance (Cm). In the presence of a parasitic feedthrough capacitor (CF) appearing across the input and output ports, the transmission characteristic is marked by two resonances: series (S) and parallel (P). Close approximations of these circuit parameters are obtained without having to first de-embed the resonator motional current typically buried in feedthrough by using the series and parallel resonances. While previous methods with the same objective are well known, we show that these are limited to the condition where CF ≪ CmQ. In contrast, this work focuses on moderate capacitive feedthrough levels where CF > CmQ, which are more common in MEMS resonators. The method is applied to data obtained from the measured electrical transmission of fabricated SOI MEMS resonators. Parameter values deduced via direct extraction are then compared against those obtained by a full extraction procedure where de-embedding is first performed and followed by a Lorentzian fit to the data based on the classical transfer function associated with a generic LRC series resonant circuit. © 2011 Elsevier B.V. All rights reserved.

Attenuation tomography. Modelling regional love waves: Imperial Valley to Pasadena

Abstract to Part I

The inverse problem of seismic wave attenuation is solved by an iterative back-projection method. The seismic wave quality factor, Q, can be estimated approximately by inverting the S-to-P amplitude ratios. Effects of various uncertain ties in the method are tested and the attenuation tomography is shown to be useful in solving for the spatial variations in attenuation structure and in estimating the effective seismic quality factor of attenuating anomalies.

Back-projection attenuation tomography is applied to two cases in southern California: Imperial Valley and the Coso-Indian Wells region. In the Coso-Indian Wells region, a highly attenuating body (S-wave quality factor (Q_β ≈ 30) coincides with a slow P-wave anomaly mapped by Walck and Clayton (1987). This coincidence suggests the presence of a magmatic or hydrothermal body 3 to 5 km deep in the Indian Wells region. In the Imperial Valley, slow P-wave travel-time anomalies and highly attenuating S-wave anomalies were found in the Brawley seismic zone at a depth of 8 to 12 km. The effective S-wave quality factor is very low (Q_β ≈ 20) and the P-wave velocity is 10% slower than the surrounding areas. These results suggest either magmatic or hydrothermal intrusions, or fractures at depth, possibly related to active shear in the Brawley seismic zone.

No-block inversion is a generalized tomographic method utilizing the continuous form of an inverse problem. The inverse problem of attenuation can be posed in a continuous form , and the no-block inversion technique is applied to the same data set used in the back-projection tomography. A relatively small data set with little redundancy enables us to apply both techniques to a similar degree of resolution. The results obtained by the two methods are very similar. By applying the two methods to the same data set, formal errors and resolution can be directly computed for the final model, and the objectivity of the final result can be enhanced.

Both methods of attenuation tomography are applied to a data set of local earthquakes in Kilauea, Hawaii, to solve for the attenuation structure under Kilauea and the East Rift Zone. The shallow Kilauea magma chamber, East Rift Zone and the Mauna Loa magma chamber are delineated as attenuating anomalies. Detailed inversion reveals shallow secondary magma reservoirs at Mauna Ulu and Puu Oo, the present sites of volcanic eruptions. The Hilina Fault zone is highly attenuating, dominating the attenuating anomalies at shallow depths. The magma conduit system along the summit and the East Rift Zone of Kilauea shows up as a continuous supply channel extending down to a depth of approximately 6 km. The Southwest Rift Zone, on the other hand, is not delineated by attenuating anomalies, except at a depth of 8-12 km, where an attenuating anomaly is imaged west of Puu Kou. The Ylauna Loa chamber is seated at a deeper level (about 6-10 km) than the Kilauea magma chamber. Resolution in the Mauna Loa area is not as good as in the Kilauea area, and there is a trade-off between the depth extent of the magma chamber imaged under Mauna Loa and the error that is due to poor ray coverage. Kilauea magma chamber, on the other hand, is well resolved, according to a resolution test done at the location of the magma chamber.

Abstract to Part II

Long period seismograms recorded at Pasadena of earthquakes occurring along a profile to Imperial Valley are studied in terms of source phenomena (e.g., source mechanisms and depths) versus path effects. Some of the events have known source parameters, determined by teleseismic or near-field studies, and are used as master events in a forward modeling exercise to derive the Green's functions (SH displacements at Pasadena that are due to a pure strike-slip or dip-slip mechanism) that describe the propagation effects along the profile. Both timing and waveforms of records are matched by synthetics calculated from 2-dimensional velocity models. The best 2-dimensional section begins at Imperial Valley with a thin crust containing the basin structure and thickens towards Pasadena. The detailed nature of the transition zone at the base of the crust controls the early arriving shorter periods (strong motions), while the edge of the basin controls the scattered longer period surface waves. From the waveform characteristics alone, shallow events in the basin are easily distinguished from deep events, and the amount of strike-slip versus dip-slip motion is also easily determined. Those events rupturing the sediments, such as the 1979 Imperial Valley earthquake, can be recognized easily by a late-arriving scattered Love wave that has been delayed by the very slow path across the shallow valley structure.

High temperature transport properties of lead chalcogenides and their alloys

This thesis describes a series of experimental studies of lead chalcogenide thermoelectric semiconductors, mainly PbSe. Focusing on a well-studied semiconductor and reporting good but not extraordinary zT, this thesis distinguishes itself by answering the following questions that haven’t been answered: What represents the thermoelectric performance of PbSe? Where does the high zT come from? How (and how much) can we make it better? For the first question, samples were made with highest quality. Each transport property was carefully measured, cross-verified and compared with both historical and contemporary report to overturn commonly believed underestimation of zT. For n- and p-type PbSe zT at 850 K can be 1.1 and 1.0, respectively. For the second question, a systematic approach of quality factor B was used. In n-type PbSe zT is benefited from its high-quality conduction band that combines good degeneracy, low band mass and low deformation potential, whereas zT of p-type is boosted when two mediocre valence bands converge (in band edge energy). In both cases the thermal conductivity from PbSe lattice is inherently low. For the third question, the use of solid solution lead chalcogenide alloys was first evaluated. Simple criteria were proposed to help quickly evaluate the potential of improving zT by introducing atomic disorder. For both PbTe1-xSex and PbSe1-xSx, the impacts in electron and phonon transport compensate each other. Thus, zT in each case was roughly the average of two binary compounds. In p-type Pb1-xSrxSe alloys an improvement of zT from 1.1 to 1.5 at 900 K was achieved, due to the band engineering effect that moves the two valence bands closer in energy. To date, making n-type PbSe better hasn’t been accomplished, but possible strategy is discussed.