904 resultados para Proof assistants
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Published as an article in: Studies in Nonlinear Dynamics & Econometrics, 2004, vol. 8, issue 1, pages 5.
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In 1972, Maschler, Peleg and Shapley proved that in the class of convex the nucleolus and the kernel coincide. The only aim of this note is to provide a shorter, alternative proof of this result.
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Impact detection in aeronautical structures allows predicting their future reliability and performance. An impact can produce microscopic fissures that could evolve into fractures or even the total collapse of the structure, so it is important to know the location and severity of each impact. For this purpose, optical fibers with Bragg gratings are used to analyze each impact and the vibrations generated by them. In this paper it is proven that optical fibers with Bragg gratings can be used to detect impacts, and also that a high-frequency interrogator is necessary to collect valuable information about the impacts. The use of two interrogators constitutes the main novelty of this paper.
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Esta tesis presenta el diseño y desarrollo del Asistente Conversacional del Automóvil, Voice User Help en inglés, un sistema conversacional basado en el paradigma pregunta-respuesta y diseñado para consultar documentación del vehículo duartne la conducción. Este trabajo recoge investigaciones realizadas en los campos de la documentación técnica, recuperación de información, procesamineto de lenguaje natural, diseñode interfaces de usuario para vehículos, experiencia del usuario y computación afectiva con el fin de crear un asistente adaptativo y dinámico que modifica su comportamiento conversacional dependiendo del estado emocional del usuario.
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We consider the quanti fied constraint satisfaction problem (QCSP) which is to decide, given a structure and a first-order sentence (not assumed here to be in prenex form) built from conjunction and quanti fication, whether or not the sentence is true on the structure. We present a proof system for certifying the falsity of QCSP instances and develop its basic theory; for instance, we provide an algorithmic interpretation of its behavior. Our proof system places the established Q-resolution proof system in a broader context, and also allows us to derive QCSP tractability results.
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Here we demonstrate a novel technique to grow carbon nanotubes (CNTs) on addressable localized areas, at wafer level, on a fully processed CMOS substrate. The CNTs were grown using tungsten micro-heaters (local growth technique) at elevated temperature on wafer scale by connecting adjacent micro-heaters through metal tracks in the scribe lane. The electrical and optical characterization show that the CNTs are identical and reproducible. We believe this wafer level integration of CNTs with CMOS circuitry enables the low-cost mass production of CNT sensors, such as chemical sensors.
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Three different inorganic-organic hetero-junctions (A : ITO/SiO2/Alq(3)/Al, B: ITO/Alq3/SiO2/Al and C: ITO/SiO2/Alq(3)/ SiO2/Al) were fabricated. The emission can be observed only under positive bias in devices A and B, but under both biases in device C according to their brightness waveforms. With increasing voltage, the increase in blue emission in devices B and C is faster than that in green emission. This is because that the recombination of hot electrons and holes, i.e., electron-hole pairs, produced blue emission in devices B and C, and the recombination of electrons injected from Al with the accumulated holes, which are excited by hot electrons, produced green emission in device A. Hence, the emissions of the devices are attributed to not only the recombination of electrons and accumulated holes, but also the cathodoluminescence-like (CL-like) emission.
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Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.
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This paper represents a LC VCO with AAC (Auto Amplitude Control), in which PMOS FETs are used as active components, and the varactors are directly connected to ground to widen Kvco linear range. The AAC circuitry adds little noise to the VCO and provides it with robust performance over a wide temperature and carrier frequency range. The VCO is fabricated in 50-GHz 0.35-mu m SiGe BiCMOS process. The measurement results show that it has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole circuit draws 6.6-mA current from 5.0-V supply.