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先介绍了气力输送的实验设备.评述了水平栓流气力输送的压力降计算方法,用3种不同的方法计算了压力降并与实验数据进行比较.此外评述了用特征线方法进行水平管的数值模拟,倾斜管的压力降计算和长距离的栓流气力输送.最后展望了该领域的发展方向.

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In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.