929 resultados para Network Modelling
Resumo:
A useful insight into managerial decision making can be found from simulation of business systems, but existing work on simulation of supply chain behaviour has largely considered non-competitive chains. Where competitive agents have been examined, they have generally had a simple structure and been used for fundamental examination of stability and equilibria rather than providing practical guidance to managers. In this paper, a new agent for the study of competitive supply chain network dynamics is proposed. The novel features of the agent include the ability to select between competing vendors, distribute orders preferentially among many customers, manage production and inventory, and determine price based on competitive behaviour. The structure of the agent is related to existing business models and sufficient details are provided to allow implementation. The agent is tested to demonstrate that it recreates the main results of the existing modelling and management literature on supply chain dynamics. A brief exploration of competitive dynamics is given to confirm that the proposed agent can respond to competition. The results demonstrate that overall profitability for a supply chain network is maximised when businesses operate collectively. It is possible for an individual business to achieve higher profits by adopting a more competitive stance, but the consequence of this is that the overall profitability of the network is reduced. The agent will be of use for a broad range of studies on the long-run effect of management decisions on their network of suppliers and customers.
Resumo:
An artificial neural network (ANN) model is developed for the analysis and simulation of the correlation between the properties of maraging steels and composition, processing and working conditions. The input parameters of the model consist of alloy composition, processing parameters (including cold deformation degree, ageing temperature, and ageing time), and working temperature. The outputs of the ANN model include property parameters namely: ultimate tensile strength, yield strength, elongation, reduction in area, hardness, notched tensile strength, Charpy impact energy, fracture toughness, and martensitic transformation start temperature. Good performance of the ANN model is achieved. The model can be used to calculate properties of maraging steels as functions of alloy composition, processing parameters, and working condition. The combined influence of Co and Mo on the properties of maraging steels is simulated using the model. The results are in agreement with experimental data. Explanation of the calculated results from the metallurgical point of view is attempted. The model can be used as a guide for further alloy development.
Resumo:
The present paper demonstrates the suitability of artificial neural network (ANN) for modelling of a FinFET in nano-circuit simulation. The FinFET used in this work is designed using careful engineering of source-drain extension, which simultaneously improves maximum frequency of oscillation f(max) because of lower gate to drain capacitance, and intrinsic gain A(V0) = g(m)/g(ds), due to lower output conductance g(ds). The framework for the ANN-based FinFET model is a common source equivalent circuit, where the dependence of intrinsic capacitances, resistances and dc drain current I-d on drain-source V-ds and gate-source V-gs is derived by a simple two-layered neural network architecture. All extrinsic components of the FinFET model are treated as bias independent. The model was implemented in a circuit simulator and verified by its ability to generate accurate response to excitations not used during training. The model was used to design a low-noise amplifier. At low power (J(ds) similar to 10 mu A/mu m) improvement was observed in both third-order-intercept IIP3 (similar to 10 dBm) and intrinsic gain A(V0) (similar to 20 dB), compared to a comparable bulk MOSFET with similar effective channel length. This is attributed to higher ratio of first-order to third-order derivative of I-d with respect to gate voltage and lower g(ds), in FinFET compared to bulk MOSFET. Copyright (C) 2009 John Wiley & Sons, Ltd.