MIS and P/N junction solar cells on thin-film polycrystalline silicon /

"Work Performed Under Contract No. EG-77-C-01-4042."

MIS and SIS solar cells on polycrystalline silicon /

"UC category: UC-63."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Thin-film polycrystalline silicon solar cells.

"Work Performed Under Contract No. ET-78-C-03-1876."

Low cost solar cells based on amorphous silicon electrodeposited from organic solvents : final technical report, September 1, 1978-August 31, 1979 /

"Work Performed Under Contract No. EY-76-S-03-0113-040."

Amorphous silicon solar cells by hydrogen implantation : final report, January 1, 1979-August 31, 1980 /

"August 1980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Novel duplex vapor-electrochemical method for silicon solar cells /

"Contract No. 954471 under NAS 7-100 SRI Project PYU 4980."

Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction with intrinsic thin layer (HIT) solar cells. Physical characterization of the deposited films shows that the hydrogen content is in the 15-30% range, depending on deposition temperature. The optical bandgap value is always comprised within the range 1.9- 2.2 eV. Minority carrier lifetime measurements performed on the heterostructures reach high values up to 1.3 ms, indicating a well-passivated a-Si:H/c-Si heterointerface for deposition temperatures as low as 100°C. In addition, we prove that the metal-oxide- semiconductor conductance method to obtain interface trap distribution can be applied to the a-Si:H/c-Si heterointerface, since the intrinsic a-Si:H layer behaves as an insulator at low or negative bias. Values for the minimum of D_it as low as 8 × 10^10 cm^2 · eV^-1 were obtained for our samples, pointing to good surface passivation properties of ECR-deposited a-Si:H for HIT solar cell applications.

Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes

We report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The absorption loss of 25% at a wavelength of 400 nm was measured for the 20 nm thick films on glass and glass/ZnO:Al substrates. By employing the p(+) nc-Si:H as a window layer, complete p-i-n structures were fabricated and characterized. Low leakage current and enhanced sensitivity in the UV/blue range were achieved by incorporating an a-SiC:H buffer between the p- and i-layers.

Study and characterization of the ZnPc:C60/MoOx interface in organic solar cells by means of photoelectron spectroscopy

Dissertation to obtain the academic degree of Master in materials engineering submitted to the Faculty of science and engineering of Universidade Nova de Lisboa