A galaxy model from Two Micron All Sky Survey star counts in the whole sky, including the plane

We use the star count model of Ortiz & Lépine to perform an unprecedented exploration of the most important Galactic parameters comparing the predicted counts with the Two Micron All Sky Survey observed star counts in the J, H, and KS bands for a grid of positions covering the whole sky. The comparison is made using a grid of lines of sight given by the HEALPix pixelization scheme. The resulting best-fit values for the parameters are: 2120 ± 200 pc for the radial scale length and 205 ± 40 pc for the scale height of the thin disk, with a central hole of 2070$_{-800}^{+2000}$ pc for the same disk, 3050 ± 500 pc for the radial scale length and 640 ± 70 pc for the scale height of the thick disk, 400 ± 100 pc for the central dimension of the spheroid, 0.0082 ± 0.0030 for the spheroid to disk density ratio, and 0.57 ± 0.05 for the oblate spheroid parameter.

A galaxy model from Two Micron All Sky Survey star counts in the whole sky, including the plane

We use the star count model of Ortiz & L´epine to perform an unprecedented exploration of the most important Galactic parameters comparing the predicted counts with the Two Micron All Sky Survey observed star counts in the J, H, and KS bands for a grid of positions covering the whole sky. The comparison is made using a grid of lines of sight given by the HEALPix pixelization scheme. The resulting best-fit values for the parameters are: 2120 ± 200 pc for the radial scale length and 205 ± 40 pc for the scale height of the thin disk, with a central hole of 2070+2000 −800 pc for the same disk, 3050 ± 500 pc for the radial scale length and 640 ± 70 pc for the scale height of the thick disk, 400 ± 100 pc for the central dimension of the spheroid, 0.0082 ± 0.0030 for the spheroid to disk density ratio, and 0.57 ± 0.05 for the oblate spheroid parameter.

Preparation and study of magnetic thin film based sub-micron structures

Due to its high Curie temperature of 420K and band structure calculations predicting 100% spin polarisation, Sr2FeMoO6 is a potential candidate for spintronic devices. However, the preparation of good quality thin films has proven to be a non-trivial task. Epitaxial Sr2FeMoO6 thin films were prepared by pulsed laser deposition on different substrates. Differing from previous reports a post-deposition annealing step at low oxygen partial pressure (10-5 mbar) was introduced and enabled the fabrication of reproducible, high quality samples. According to the structural properties of the substrates the crystal structure and morphology of the thin films are modified. The close interrelation between the structural, magnetic and electronic properties of Sr2FeMoO6 was studied. A detailed evaluation of the results allowed to extract valuable information on the microscopic nature of magnetism and charge transport. Smooth films with a mean roughness of about 2 nm have been achieved, which is a pre-requisite for a possible inclusion of this material in future devices. In order to establish device-oriented sub-micron patterning as a standard technique, electron beam lithography and focussed ion beam etching facilities have been put into operation. A detailed characterisation of these systems has been performed. To determine the technological prospects of new spintronics materials, the verification of a high spin polarisation is of vital interest. A popular technique for this task is point contact Andreev reflection (PCAR). Commonly, the charge transport in a transparent metal-superconductor contact of nanometer dimensions is attributed solely to coherent transport. If this condition is not fulfilled, inelastic processes in the constriction have to be considered. PCAR has been applied to Sr2FeMoO6 and the Heusler compound Co2Cr0.6Fe0.4Al. Systematic deviations between measured spectra and the standard models of PCAR have been observed. Therefore existing approaches have been generalised, in order to include the influence of heating. With the extended model the measured data was successfully reproduced but the analysis has revealed grave implications for the determination of spin polarisation, which was found to break down completely in certain cases.

Parallel Architectures for Many-Core Systems-On-Chip in Deep Sub-Micron Technology

Despite the several issues faced in the past, the evolutionary trend of silicon has kept its constant pace. Today an ever increasing number of cores is integrated onto the same die. Unfortunately, the extraordinary performance achievable by the many-core paradigm is limited by several factors. Memory bandwidth limitation, combined with inefficient synchronization mechanisms, can severely overcome the potential computation capabilities. Moreover, the huge HW/SW design space requires accurate and flexible tools to perform architectural explorations and validation of design choices. In this thesis we focus on the aforementioned aspects: a flexible and accurate Virtual Platform has been developed, targeting a reference many-core architecture. Such tool has been used to perform architectural explorations, focusing on instruction caching architecture and hybrid HW/SW synchronization mechanism. Beside architectural implications, another issue of embedded systems is considered: energy efficiency. Near Threshold Computing is a key research area in the Ultra-Low-Power domain, as it promises a tenfold improvement in energy efficiency compared to super-threshold operation and it mitigates thermal bottlenecks. The physical implications of modern deep sub-micron technology are severely limiting performance and reliability of modern designs. Reliability becomes a major obstacle when operating in NTC, especially memory operation becomes unreliable and can compromise system correctness. In the present work a novel hybrid memory architecture is devised to overcome reliability issues and at the same time improve energy efficiency by means of aggressive voltage scaling when allowed by workload requirements. Variability is another great drawback of near-threshold operation. The greatly increased sensitivity to threshold voltage variations in today a major concern for electronic devices. We introduce a variation-tolerant extension of the baseline many-core architecture. By means of micro-architectural knobs and a lightweight runtime control unit, the baseline architecture becomes dynamically tolerant to variations.