Vortex pinning vs superconducting wire network: origin of periodic oscillations induced by applied magnetic fields in superconducting films with arrays of nanomagnets

Hybrid magnetic arrays embedded in superconducting films are ideal systems to study the competition between different physical (such as the coherence length) and structural length scales such as are available in artificially produced structures. This interplay leads to oscillation in many magnetically dependent superconducting properties such as the critical currents, resistivity and magnetization. These effects are generally analyzed using two distinct models based on vortex pinning or wire network. In this work, we show that for magnetic dot arrays, as opposed to antidot (i.e. holes) arrays, vortex pinning is the main mechanism for field induced oscillations in resistance R(H), critical current Ic(H), magnetization M(H) and ac-susceptibility χ ac(H) in a broad temperature range. Due to the coherence length divergence at Tc, a crossover to wire network behaviour is experimentally found. While pinning occurs in a wide temperature range up to Tc, wire network behaviour is only present in a very narrow temperature window close to Tc. In this temperature interval, contributions from both mechanisms are operational but can be experimentally distinguished.

Control of magnetic properties of FeCo thin films grown by sputtering

Control of magnetic properties of FeCo thin films grown by sputtering

The effects of gas occlusions and strains on the magnetic properties of thin permalloy films /

"May 1965."

Influence of the sputtering flow regime on the structural properties and magnetic behavior of Fe-Ga thin films (Ga ∼ 30 at.%)

In this paper we analyze the structure of Fe-Ga layers with a Ga content of ∼30 at.% deposited by the sputtering technique under two different regimes. We also studied the correlation between the structure and magnetic behavior of the samples. Keeping the Ar pressure fixed, we modified the flow regime from ballistic to diffusive by increasing the distance between the target and the substrate. X-ray diffraction measurements have shown a lower structural quality when growing in the diffusive flow. We investigated the impact of the growth regime by means of x-ray absorption fine structure (XAFS) measurements and obtained signs of its influence on the local atomic order. Full multiple scattering and finite difference calculations based on XAFS measurements point to a more relevant presence of a disordered A2 phase and of orthorhombic Ga clusters on the Fe-Ga alloy deposited under a diffusive regime; however, in the ballistic sample, a higher presence of D0_3/B2 phases is evidenced. Structural characteristics, from local to long range, seem to determine the magnetic behavior of the layers. Whereas a clear in-plane magnetic anisotropy is observed in the film deposited under ballistic flow, the diffusive sample is magnetically isotropic. Therefore, our experimental results provide evidence of a correlation between flow regime and structural properties and its impact on the magnetic behavior of a rather unexplored compositional region of Fe-Ga compounds.

Ordered magnetic dipoles: controlling anisotropy in nanomodulated continuous ferromagnetic films

In this paper, the research focus is how to entangle magnetic dipoles to control/engineer magnetic properties of different devices at a submicron/nano scale. Here, we report the generation of synthetic arrays of tunable magnetic dipoles in a nanomodulated continuous ferromagnetic film. In-plane magnetic field rotations in modulated Ni 45Fe 55 revealed various rotational symmetries of magnetic anisotropy due to dipolar interaction with a crossover from lower to higher fold as a function of modulation geometry. Additionally, the effect of aspect ratio on symmetry shows a novel phase shift of anisotropy, which could be critical to manipulate the overall magnetic properties of the patterned film. The tendency to form vortex is in fact found to be very small, which highlights that the strong coupling between metastable dipoles is more favorable than vortex formation to minimize energy in this nanomodulated structure. This has further been corroborated by the observation of step hysteresis, magnetic force microscopy images of tunable magnetic dipoles, and quantitative micromagnetic simulations. An analytical expression has been derived to estimate the overall anisotropy accurately for nanomodulated film having low magnetocrystaline anisotropy. Derived mathematical expressions based on magnetic dipolar interaction are found to be in good agreement with our results.

Room temperature electromechanical and magnetic investigations of ferroelectric Aurivillius phase Bi5Ti3(FexMn1−x)O15 (x = 1 and 0.7) chemical solution deposited thin films

Aurivillius phase thin films of Bi5Ti3(FexMn1−x)O15 with x = 1 (Bi5Ti3FeO15) and 0.7 (Bi5Ti3Fe0.7Mn0.3O15) on SiO2-Si(100) and Pt/Ti/SiO2-Si substrates were fabricated by chemical solution deposition. The method was optimized in order to suppress formation of pyrochlore phase Bi2Ti2O7 and improve crystallinity. The structuralproperties of the films were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. Optimum crystallinity and pyrochlore phase suppression was achieved by the addition of 15 to 25 mol. % excess bismuth to the sols. Based on this study, 17.5 mol. % excess bismuth was used in the preparation of Bi2Ti2O7-free films of Bi5Ti3FeO15 on SrTiO3(100) and NdGaO3(001) substrates, confirming the suppression of pyrochlore phase using this excess of bismuth. Thirty percent of the Fe3+ ions in Bi5Ti3FeO15 was substituted with Mn3+ ions to form Bi2Ti2O7-free thin films of Bi5Ti3Fe0.7Mn0.3O15 on Pt/Ti/SiO2-Si, SiO2-Si(100), SrTiO3(100), and NdGaO3(001) substrates. Bi5Ti3FeO15 and Bi5Ti3Fe0.7Mn0.3O15thin films on Pt/Ti/SiO2-Si and SiO2-Si(100) substrates were achieved with a higher degree of a-axis orientation compared with the films on SrTiO3(100) and NdGaO3(001) substrates. Room temperature electromechanical and magnetic properties of the thin films were investigated in order to assess the potential of these materials for piezoelectric,ferroelectric, and multiferroic applications. Vertical piezoresponse force microscopy measurements of the films demonstrate that Bi5Ti3FeO15 and Bi5Ti3Fe0.7Mn0.3O15thin films are piezoelectric at room temperature. Room temperature switching spectroscopy-piezoresponse force microscopy measurements in the presence and absence of an applied bias demonstrate local ferroelectric switching behaviour (180°) in the films. Superconducting quantum interference device magnetometry measurements do not show any room temperature ferromagnetic hysteresis down to an upper detection limit of 2.53 × 10−3 emu; and it is concluded, therefore, that such films are not mutiferroic at room temperature. Piezoresponse force microscopy lithography images of Bi5Ti3Fe0.7Mn0.3O15thin films are presented.

Magnetic field-induced ferroelectric switching in multiferroic aurivillius phase thin films at room temperature

Single-phase multiferroic materials are of considerable interest for future memory and sensing applications. Thin films of Aurivillius phase Bi 7Ti3Fe3O21 and Bi6Ti 2.8Fe1.52Mn0.68O18 (possessing six and five perovskite units per half-cell, respectively) have been prepared by chemical solution deposition on c-plane sapphire. Superconducting quantum interference device magnetometry reveal Bi7Ti3Fe 3O21 to be antiferromagnetic (TN = 190 K) and weakly ferromagnetic below 35 K, however, Bi6Ti2.8Fe 1.52Mn0.68O18 gives a distinct room-temperature in-plane ferromagnetic signature (Ms = 0.74 emu/g, μ0Hc =7 mT). Microstructural analysis, coupled with the use of a statistical analysis of the data, allows us to conclude that ferromagnetism does not originate from second phase inclusions, with a confidence level of 99.5%. Piezoresponse force microscopy (PFM) demonstrates room-temperature ferroelectricity in both films, whereas PFM observations on Bi6Ti2.8Fe1.52Mn0.68O18 show Aurivillius grains undergo ferroelectric domain polarization switching induced by an applied magnetic field. Here, we show for the first time that Bi6Ti2.8Fe1.52Mn0.68O18 thin films are both ferroelectric and ferromagnetic and, demonstrate magnetic field-induced switching of ferroelectric polarization in individual Aurivillius phase grains at room temperature.

Swift Heavy Ion Irradiation and Thermal Annealing Induced Modification of Structural, Topographical and Magnetic Properties in Monolayer and Bilayer Films Based on FeNiMoB and Zinc Ferrite

Magnetism and magnetic materials have been playing a lead role in the day to day life of human beings. The human kind owes its gratitude to the ‘lodestone’ meaning ‘leading stone’ which lead to the discovery of nations and the onset of modern civilizations. If it was William Gilbert, who first stated that ‘earth was a giant magnet’, then it was the turn of Faraday who correlated electricity and magnetism. Magnetic materials find innumerable applications in the form of inductors, read and write heads, motors, storage devices, magnetic resonance imaging and fusion reactors. Now the industry of magnetic materials has almost surpassed the semiconductor industry and this speaks volumes about its importance. Extensive research is being carried out by scientists and engineers to remove obsolescence and invent new devices. Though magnetism can be categorized based on the response of an applied magnetic field in to diamagnetic, paramagnetic, ferromagnetic, ferrimagnetic and antiferromagnetic; it is ferrimagnetic, ferromagnetic and antiferromagnetic materials which have potential applications. The present thesis focusses on these materials, their composite structures and different ways and means to modify their properties for useful applications. In the past, metals like Fe, Ni and Co were sought after for various applications though iron was in the forefront because of its cost effectiveness and abundance. Later, alloys based on Fe and Ni were increasingly employed. They were used in magnetic heads and in inductors. Ferrites entered the arena and subsequently most of the newer applications were based on ferrites, a ferrimagnetic material, whose composition can be tuned to tailor the magnetic properties. In the late 1950s a new class of magnetic material emerged on the magnetic horizon and they were fondly known as metallic glasses. They are well known for their soft magnetic properties. They were synthesized in the form of melt spun ribbons and are amorphous in nature and they are projected to replace the crystalline counterparts.

Swift Heavy Ion Irradiation and Thermal Annealing Induced Modification of Structural, Topographical and Magnetic Properties in Monolayer and Bilayer Films Based on FeNiMoB and Zinc Ferrite

Magnetism and magnetic materials have been playing a lead role in the day to day life of human beings. The human kind owes its gratitude to the ‘lodestone’ meaning ‘leading stone’ which lead to the discovery of nations and the onset of modern civilizations. If it was William Gilbert, who first stated that ‘earth was a giant magnet’, then it was the turn of Faraday who correlated electricity and magnetism. Magnetic materials find innumerable applications in the form of inductors, read and write heads, motors, storage devices, magnetic resonance imaging and fusion reactors. Now the industry of magnetic materials has almost surpassed the semiconductor industry and this speaks volumes about its importance. Extensive research is being carried out by scientists and engineers to remove obsolescence and invent new devices. Though magnetism can be categorized based on the response of an applied magnetic field in to diamagnetic, paramagnetic, ferromagnetic, ferrimagnetic and antiferromagnetic; it is ferrimagnetic, ferromagnetic and antiferromagnetic materials which have potential applications. The present thesis focusses on these materials, their composite structures and different ways and means to modify their properties for useful applications.

Engineering thin films of magnetic alloys and semiconductor oxides at the nanoscale

The thesis aims to exploit properties of thin films for applications such as spintronics, UV detection and gas sensing. Nanoscale thin films devices have myriad advantages and compatibility with Si-based integrated circuits processes. Two distinct classes of material systems are investigated, namely ferromagnetic thin films and semiconductor oxides. To aid the designing of devices, the surface properties of the thin films were investigated by using electron and photon characterization techniques including Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXRD), and energy-dispersive X-ray spectroscopy (EDS). These are complemented by nanometer resolved local proximal probes such as atomic force microscopy (AFM), magnetic force microscopy (MFM), electric force microscopy (EFM), and scanning tunneling microscopy to elucidate the interplay between stoichiometry, morphology, chemical states, crystallization, magnetism, optical transparency, and electronic properties. Specifically, I studied the effect of annealing on the surface stoichiometry of the CoFeB/Cu system by in-situ AES and discovered that magnetic nanoparticles with controllable areal density can be produced. This is a good alternative for producing nanoparticles using a maskless process. Additionally, I studied the behavior of magnetic domain walls of the low coercivity alloy CoFeB patterned nanowires. MFM measurement with the in-plane magnetic field showed that, compared to their permalloy counterparts, CoFeB nanowires require a much smaller magnetization switching field , making them promising for low-power-consumption domain wall motion based devices. With oxides, I studied CuO nanoparticles on SnO2 based UV photodetectors (PDs), and discovered that they promote the responsivity by facilitating charge transfer with the formed nanoheterojunctions. I also demonstrated UV PDs with spectrally tunable photoresponse with the bandgap engineered ZnMgO. The bandgap of the alloyed ZnMgO thin films was tailored by varying the Mg contents and AES was demonstrated as a surface scientific approach to assess the alloying of ZnMgO. With gas sensors, I discovered the rf-sputtered anatase-TiO2 thin films for a selective and sensitive NO2 detection at room temperature, under UV illumination. The implementation of UV enhances the responsivity, response and recovery rate of the TiO2 sensor towards NO2 significantly. Evident from the high resolution XPS and AFM studies, the surface contamination and morphology of the thin films degrade the gas sensing response. I also demonstrated that surface additive metal nanoparticles on thin films can improve the response and the selectivity of oxide based sensors. I employed nanometer-scale scanning probe microscopy to study a novel gas senor scheme consisting of gallium nitride (GaN) nanowires with functionalizing oxides layer. The results suggested that AFM together with EFM is capable of discriminating low-conductive materials at the nanoscale, providing a nondestructive method to quantitatively relate sensing response to the surface morphology.

NONLINEAR EFFECTS IN MAGNETIC GARNET FILMS AND NONRECIPROCAL OPTICAL BLOCH OSCILLATIONS IN WAVEGUIDE ARRAYS

This dissertation presents detailed experimental and theoretical investigations of nonlinear and nonreciprocal effects in magnetic garnet films. The dissertation thus comprises two major sections. The first section concentrates on the study of a new class of nonlinear magneto-optic thin film materials possessing strong higher order magnetic susceptibility for nonlinear optical applications. The focus was on enlarging the nonlinear performance of ferrite garnet films by strain generation and compositional gradients in the sputter-deposition growth of these films. Under this project several bismuth-substituted yttrium iron garnet (Bi,Y) 3 (Fe,Ga)5 O12(acronym as Bi:YIG) films have been sputter-deposited over gadolinium gallium garnet (Gd 3 Ga5 O12 ) substrates and characterized for their nonlinear optical response. One of the important findings of this work is that lattice mismatch strain drives the second harmonic (SH) signal in the Bi:YIG films, in agreement with theoretical predictions; whereas micro-strain was found not to correlate significantly with SH signal at the micro-strain levels present in these films. This study also elaborates on the role of the film's constitutive elements and their concentration gradients in nonlinear response of the films. Ultrahigh sensitivity delivered by second harmonic generation provides a new exciting tool for studying magnetized surfaces and buried interfaces, making this work important from both a fundamental and application point of view. The second part of the dissertation addresses an important technological need; namely the development of an on-chip optical isolator for use in photonic integrated circuits. It is based on two related novel effects, nonreciprocal and unidirectional optical Bloch oscillations (BOs), recently proposed and developed by Professor Miguel Levy and myself. This dissertation work has established a comprehensive theoretical background for the implementation of these effects in magneto-optic waveguide arrays. The model systems we developed consist of photonic lattices in the form of one-dimensional waveguide arrays where an optical force is introduced into the array through geometrical design turning the beam sideways. Laterally displaced photons are periodically returned to a central guide by photonic crystal action. The effect leads to a novel oscillatory optical phenomenon that can be magnetically controlled and rendered unidirectional. An on-chip optical isolator was designed based on the unidirectionality of the magneto-opticBloch oscillatory motion. The proposed device delivers an isolation ratio as high as 36 dB that remains above 30 dB in a 0.7 nm wavelength bandwidth, at the telecommunication wavelength 1.55 μm. Slight modifications in isolator design allow one to achieve an even more impressive isolation ratio ~ 55 dB, but at the expense of smaller bandwidth. Moreover, the device allows multifunctionality, such as optical switching with a simultaneous isolation function, well suited for photonic integrated circuits.

Direct visualization of magnetic-field-induced magnetoelectric switching in multiferroic Aurivillius phase thin films

Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters could provide a means for data storage whereby bits could be written electrically and read magnetically, or vice versa. Thin films of Aurivillius phase Bi6Ti2.8Fe1.52Mn0.68O18, previously prepared by a chemical solution deposition (CSD) technique, are multiferroics demonstrating magnetoelectric coupling at room temperature. Here, we demonstrate the growth of a similar composition, Bi6Ti2.99Fe1.46Mn0.55O18, via the liquid injection chemical vapor deposition technique. High-resolution magnetic measurements reveal a considerably higher in-plane ferromagnetic signature than CSD grown films (MS = 24.25 emu/g (215 emu/cm3), MR = 9.916 emu/g (81.5 emu/cm3), HC = 170 Oe). A statistical analysis of the results from a thorough microstructural examination of the samples, allows us to conclude that the ferromagnetic signature can be attributed to the Aurivillius phase, with a confidence level of 99.95%. In addition, we report the direct piezoresponse force microscopy visualization of ferroelectric switching while going through a full in-plane magnetic field cycle, where increased volumes (8.6 to 14% compared with 4 to 7% for the CSD-grown films) of the film engage in magnetoelectric coupling and demonstrate both irreversible and reversible magnetoelectric domain switching.

Free-standing urethane/urea elastomer films undoped and doped with ferro-nano-particles

We report on an experimental study of the structures presented by urethane/urea elastomeric films without and with ferromagnetic nanoparticles incorporated. The study is made by using the X-ray diffraction, nuclear magnetic resonance (NMR), optical, atomic and magnetic force (MFM) microscopy techniques, and mechanical assays. The structure of the elastomeric matrix is characterized by a distance of 0.46 nm between neighboring molecular segments, almost independent on the stretching applied. The shear casting performed in order to obtain the elastomeric films tends to orient the molecules parallel to the flow direction thus introducing anisotropy in the molecular network which is reflected on the values obtained for the orientational order parameter and its increase for the stretched films. In the case of nanoparticles-doped samples, the structure remains nearly unchanged although the local order parameter is clearly larger for the undoped films. NMR experiments evidence modifications in the molecular network local ordering. Micrometer size clusters were observed by MFM for even small concentration of magnetic particles.

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

The magnetic europium chalcogenide semiconductors EuTe and EuSe are investigated by the spectroscopy of second harmonic generation (SHG) in the vicinity of the optical band gap formed by transitions involving the 4f and 5d electronic orbitals of the magnetic Eu(2+) ions. In these materials with centrosymmetric crystal lattice the electric-dipole SHG process is symmetry forbidden so that no signal is observed in zero magnetic field. Signal appears, however, in applied magnetic field with the SHG intensity being proportional to the square of magnetization. The magnetic field and temperature dependencies of the induced SHG allow us to introduce a type of nonlinear optical susceptibility determined by the magnetic-dipole contribution in combination with a spontaneous or induced magnetization. The experimental results can be described qualitatively by a phenomenological model based on a symmetry analysis and are in good quantitative agreement with microscopic model calculations accounting for details of the electronic energy and spin structure.

Anomalous lattice parameter of magnetic semiconductor alloys

The addition of transition metals to III-V semiconductors radically changes their electronic, magnetic, and structural properties. We show by ab initio calculations that in contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including those with diluted concentration, strongly deviates from Vegard's law. We find a direct correlation between the magnetic moment and the anion-transition metal bond lengths and derive a simple and general formula that determines the lattice parameter of a particular magnetic semiconductor by considering both the composition and magnetic moment. This dependence can explain some experimentally observed anomalies and stimulate other kind of investigations.