Ultrafast Low-Loss 40-70 GHz SPST Switch

The design and characterizations of an ultrafast single-pole single-throw (SPST) absorptive differential switch are presented. The switch exhibits low insertion loss less than 1 dB, and isolation better than 16 dB from 40 to 70 GHz. Sub-nanosecond switching time is achieved by adopting a differential current-steering technique. The total measured rise and fall time are 75 ps envisaging that switching rates up to 13 Gb/s are achievable. To our best knowledge, this is the fastest, lowest insertion loss V-band SPST switch yet reported that can operate over a wide bandwidth of 30 GHz.

A 76-84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer

This paper presents holistic design of a novel four-way differential power-combining transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner radius of 25 µm exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. It is designed to simultaneously act as a balanced-to-unbalanced converter, removing the need for additional BALUNs typically required in differential circuits. A complete circuit comprised of a power splitter, two-stage differential cascode PA array, a power combiner as well as input and output matching elements was designed and realized in SiGe technology with f/f 170/250 GHz. Measured small-signal gain of at least 16.8 dB was obtained from 76.4 to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm output referred 1 dB compression point and 14 dBm saturated output power when operated from a 3.2 V dc supply voltage at 78 GHz.

Microwave dielectric properties of MO -La2O3-TiO2 (M = Ca, Sr, Ba) ceramics

Single-phase polycrystalline ceramics in the MO-La2O3-Ti02 (M = Ca, Sr, Ba) system, such as cation-deficient hexagonal perovskites CaLa4Ti4O15, SrLa4Ti4O15, BaLa4Ti4O15, and Ca2La4Ti5O18 and the orthorhombic phases CaLa4Ti5O17 and CaLa8Ti9O31, were prepared through the solid-state ceramic route. The phases and structure of the ceramics were analyzed through x-ray diffraction and scanning electron microscopy. The microwave dielectric properties of the ceramics were studied using a network analyzer. The investigated ceramics show high Er in the range 42 to 54, high quality factors with Q x f in the range 16,222 to 50,215 GHz, and low Tf in the range -25 to +6 ppm3/°C. These high dielectric constant materials with high Q x f up to 50,215 GHz are suitable for applications where narrow bandwidth and extremely low insertion loss is necessary, especially at frequencies around 1.9 GHz

Microwave Dielectric Properties of RETiTaO6 (RE = La, Ce,Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) Ceramics

Microwave dielectric ceramics based on RETiTaO6 (RE = La, Cc, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, Yb, Al, and In) were prepared using a conventional solid-state ceramic route. The structure and microstructure of the samples were analyzed using x-ray diffraction and scanning electron microscopy techniques. The sintered samples were characterized in the microwave frequency region. The ceramics based on Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy, which crystallize in orthorhombic aeschynite structure, had a relatively high dielectric constant and positive T f while those based on Ho, Er, and Yb, with orthorhombic euxenite structure, had a low dielectric constant and negative Tf. The RETiTaO6 ceramics had a high-quality factor. The dielectric constant and unit cell volume of the ceramics increased with an increase in ionic radius of the rare-earth ions, but density decreased with it. The value of Tf increased with an increase in RE ionic radii, and a change in the sign of Tf occurred when the ionic radius was between 0.90 and 0.92 A. The results indicated that the boundary of the aeschynite to euxenite morphotropic phase change lay between DyTiTaO6 and HoTiTaO6. Low-loss ceramics like ErTiTaO6 (Er = 20.6, Qxf = 85,500), EuTiTaO6 (Er = 41.3, Qxf = 59,500), and YTiTaO6 (Er = 22.1, Q„xf = 51,400) are potential candidates for dielectric resonator applications

Low k thin films based on rf plasma-polymerized aniline

Thermally stable materials with low dielectric constant (k < 3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films were prepared by employing an rf plasma polymerization technique. Capacitance, dielectric loss, dielectric constant and ac conductivity were evaluated in the frequency range 100 Hz– 1 MHz. Capacitance and dielectric loss decrease with increase of frequency and increase with increase of temperature. This type of behaviour was found to be in good agreement with an existing model. The ac conductivity was calculated from the observed dielectric constant and is explained based on the Austin–Mott model for hopping conduction. These films exhibit low dielectric constant values, which are stable over a wide range of frequencies and are probable candidates for low k applications.

Dielectric properties of process cheese from 0.3 to 3 Ghz

Dielectric properties of 16 process cheeses were determined over the frequency range 0.3-3 GHz. The effect of temperature on the dielectric properties of process cheeses were investigated at temperature intervals of 10 degrees C between 5 and 85 degrees C. Results showed that the dielectric constant decreased gradually as frequency increased, for all cheeses. The dielectric loss factor (epsilon") decreased from above 125 to below 12 as frequency increased. epsilon' was highest at 5 degrees C and generally decreased up to a temperature between 55 and 75 degrees C. epsilon" generally increased with increasing temperature for high and medium moisture/fat ratio cheeses. epsilon" decreased with temperature between 5 and 55 degrees C and then increased, for low moisture/fat ratio cheese. Partial least square regression models indicated that epsilon' and epsilon" could be used as a quality control screening application to measure moisture content and inorganic salt content of process cheese, respectively. (c) 2005 Elsevier Ltd. All rights reserved..

Dielectric spectroscopy and thermally stimulated discharge current in PEEK film

A permissividade complexa de filmes de poli(eter-eter-cetona) (PEEK) foram investigados num grande intervalo de frequência. Não foram observados picos de relaxação no intervalo de frequência de 1,0 Hz a 10(5) Hz, mas no intervalo de baixa frequência (10-4 Hz) há uma evidência de pico, o qual também pode ser observado com medidas de corrente de despolarização termo-estimulada (TSDC). Este pico está relacionado com a transição vítrea do polímero. A energia de ativação relacionada a esta relaxação dipolar foi obtida e ovalor é Ea = 0,44 eV, que é similar à energia de ativação de muitos polímeros sintéticos. As cargas espaciais se mostraram importantes no mecanismo de condução como evidenciado nas medidas da corrente de despolarização.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramics

Single-phase Ba(Cd1/3Ta2/3)O-3 powder was produced using conventional solid state reaction methods. Ba(Cd1/3Ta2/3)O-3 ceramics with 2 wt % ZnO as sintering additive sintered at 1550 degreesC exhibited a dielectric constant of similar to32 and loss tangent of 5x10(-5) at 2 GHz. X-ray diffraction and thermogravimetric measurements were used to characterize the structural and thermodynamic properties of the material. Ab initio electronic structure calculations were used to give insight into the unusual properties of Ba(Cd1/3Ta2/3)O-3, as well as a similar and more widely used material Ba(Zn1/3Ta2/3)O-3. While both compounds have a hexagonal Bravais lattice, the P321 space group of Ba(Cd1/3Ta2/3)O-3 is reduced from P (3) under bar m1 of Ba(Zn1/3Ta2/3)O-3 as a result of a distortion of oxygen away from the symmetric position between the Ta and Cd ions. Both of the compounds have a conduction band minimum and valence band maximum composed of mostly weakly itinerant Ta 5d and Zn 3d/Cd 4d levels, respectively. The covalent nature of the directional d-electron bonding in these high-Z oxides plays an important role in producing a more rigid lattice with higher melting points and enhanced phonon energies, and is suggested to play an important role in producing materials with a high dielectric constant and low microwave loss. (C) 2005 American Institute of Physics.

High-voltage insulation organic-inorganic nanocomposites by plasma polymerization

In organic-inorganic nanocomposites, interfacial regions are primarily influenced by the dispersion uniformity of nanoparticles and the strength of interfacial bonds between the nanoparticles and the polymer matrix. The insulating performance of organic-inorganic dielectric nanocomposites is highly influenced by the characteristics of interfacial regions. In this study, we prepare polyethylene oxide (PEO)-like functional layers on silica nanoparticles through plasma polymerization. Epoxy resin/silica nanocomposites are subsequently synthesized with these plasma-polymerized nanoparticles. It is found that plasma at a low power (i.e., 10 W) can significantly increase the concentration of C-O bonds on the surface of silica nanoparticles. This plasma polymerized thin layer can not only improve the dispersion uniformity by increasing the hydrophilicity of the nanoparticles, but also provide anchoring sites to enable the formation of covalent bonds between the organic and inorganic phases. Furthermore, electrical tests reveal improved electrical treeing resistance and decreased dielectric constant of the synthesized nanocomposites, while the dielectric loss of the nanocomposites remains unchanged as compared to the pure epoxy resin.

Low-frequency, high-density, inductively coupled plasma sources : operation and applications

Operation regimes, plasma parameters, and applications of the low-frequency (∼500 kHz) inductively coupled plasma (ICP) sources with a planar external coil are investigated. It is shown that highly uniform, high-density (ne∼9×1012 cm-3) plasmas can be produced in low-pressure argon discharges with moderate rf powers. The low-frequency ICP sources operate in either electrostatic (E) or electromagnetic (H) regimes in a wide pressure range without any Faraday shield or an external multipolar magnetic confinement, and exhibit high power transfer efficiency, and low circuit loss. In the H mode, the ICP features high level of uniformity over large processing areas and volumes, low electron temperatures, and plasma potentials. The low-density, highly uniform over the cross-section, plasmas with high electron temperatures and plasma and sheath potentials are characteristic to the electrostatic regime. Both operation regimes offer great potential for various plasma processing applications. As examples, the efficiency of the low-frequency ICP for steel nitriding and plasma-enhanced chemical vapor deposition of hydrogenated diamond-like carbon (DLC) films, is demonstrated. It appears possible to achieve very high nitriding rates and dramatically increase micro-hardness and wear resistance of the AISI 304 stainless steel. It is also shown that the deposition rates and mechanical properties of the DLC films can be efficiently controlled by selecting the discharge operating regime.

Silylation of mechanically ground kaolinite

Silylated kaolinites were synthesized at 80°C without the use of inert gas protection. The method presented started with mechanical grinding of kaolinite, followed by grafting with 3-aminopropyltriethoxysilane (APTES). The mechanical grinding treatment destroyed the ordered sheets of kaolinite, formed fine fragments and generated broken bonds (undercoordinated metal ions). These broken bonds served as new sites for the condensation with APTES. Fourier transform infrared spectroscopy (FTIR) confirmed the existence of –CH2 from APTES. 29Si cross-polarization magic-angle spinning nuclear magnetic resonance spectroscopy (29Si CP/MAS NMR) showed that the principal bonding mechanism between APTES and kaolinite fitted a tridentate silylation model (T3) with a chemical shift at 66.7 ppm. The silane loadings of the silylated samples were estimated from the mass loss obtained by TG-DTG curves. The results showed that the 6-hour ground kaolinite could be grafted with the most APTES (7.0%) using cyclohexane as solvent. The loaded amount of APTES in the silylated samples obtained in different solvents decreased in the order as: nonpolar solvent > polar solvent with low dielectric constant (toluene) > polar solvent with high dielectric constant (ethanol).

On the dielectric dispersion and absorption in nanosized manganese zinc mixed ferrites

The temperature and frequency dependence of dielectric permittivity and dielectric loss of nanosized Mn1-xZnxFe2O4 (for x = 0, 0.2, 0.4, 0.6, 0.8, 1) were investigated. The impact of zinc substitution on the dielectric properties of the mixed ferrite is elucidated. Strong dielectric dispersion and broad relaxation were exhibited by Mn1-xZnxFe2O4. The variation of dielectric relaxation time with temperature suggests the involvement of multiple relaxation processes. Cole-Cole plots were employed as an effective tool for studying the observed phenomenon. The activation energies were calculated from relaxation peaks and Cole-Cole plots and found to be consistent with each other and indicative of a polaron conduction.

Synthesis of nanoparticles of the giant dielectric material, CaCu3Ti4O12 from a precursor route

A complex oxalate precursor, CaCu3(TiO)(4)(C2O4)(8)center dot 9H(2)O, (CCT-OX), was synthesized and the precipitate that obtained was confirmed to be monophasic by the wet chemical analyses, X-ray diffraction, FTIR absorption and TG/DTA analyses. The thermal decomposition of this oxalate precursor led to the formation of phase-pure calcium copper titanate, CaCu3Ti4O12, (CCTO) at a parts per thousand yen680A degrees C. The bright-field TEM micrographs revealed that the size of the as synthesized crystallites to be in the 30-80 nm range. The powders so obtained had excellent sinterability resulting in high density ceramics which exhibited giant dielectric constants upto 40000 (1 kHz) at 25A degrees C, accompanied by low dielectric losses.