Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

Single Layer Growth of Strained Epitaxy at Low Temperature

Contacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C are found to be large islands with atomic thick terraces. AFM measurements reveale near one monolayer high steps. This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.

Low-temperature, self-nucleated growth of indium-tin oxide nanostructures by pulsed laser deposition on amorphous substrates

Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented < 100 >. For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Ocean acidification alleviates low-temperature effects on growth and photosynthesis of the red alga Neosiphonia harveyi (Rhodophyta)

This study aimed to examine interactive effects between ocean acidification and temperature on the photosynthetic and growth performance of Neosiphonia harveyi. N. harveyi was cultivated at 10 and 17.5 °C at present (~380 µatm), expected future (~800 µatm), and high (~1500 µatm) pCO2. Chlorophyll a fluorescence, net photosynthesis, and growth were measured. The state of the carbon-concentrating mechanism (CCM) was examined by pH-drift experiments (with algae cultivated at 10 °C only) using ethoxyzolamide, an inhibitor of external and internal carbonic anhydrases (exCA and intCA, respectively). Furthermore, the inhibitory effect of acetazolamide (an inhibitor of exCA) and Tris (an inhibitor of the acidification of the diffusive boundary layer) on net photosynthesis was measured at both temperatures. Temperature affected photosynthesis (in terms of photosynthetic efficiency, light saturation point, and net photosynthesis) and growth at present pCO2, but these effects decreased with increasing pCO2. The relevance of the CCM decreased at 10 °C. A pCO2 effect on the CCM could only be shown if intCA and exCA were inhibited. The experiments demonstrate for the first time interactions between ocean acidification and temperature on the performance of a non-calcifying macroalga and show that the effects of low temperature on photosynthesis can be alleviated by increasing pCO2. The findings indicate that the carbon acquisition mediated by exCA and acidification of the diffusive boundary layer decrease at low temperatures but are not affected by the cultivation level of pCO2, whereas the activity of intCA is affected by pCO2. Ecologically, the findings suggest that ocean acidification might affect the biogeographical distribution of N. harveyi.

Low temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

The electrical performance of indium tin oxide (ITO) coated glass was improved by including a controlled layer of carbon nanotubes directly on top of the ITO film. Multi-wall carbon nanotubes (MWCNTs) were synthesized by chemical vapor deposition, using ultra-thin Fe layers as catalyst. The process parameters (temperature, gas flow and duration) were carefully refined to obtain the appropriate size and density of MWCNTs with a minimum decrease of the light harvesting in the cell. When used as anodes for organic solar cells based on poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM), the MWCNT-enhanced electrodes are found to improve the charge carrier extraction from the photoactive blend, thanks to the additional percolation paths provided by the CNTs. The work function of as-modified ITO surfaces was measured by the Kelvin probe method to be 4.95 eV, resulting in an improved matching to the highest occupied molecular orbital level of the P3HT. This is in turn expected to increase the hole transport and collection at the anode, contributing to the significant increase of current density and open circuit voltage observed in test cells created with such MWCNT-enhanced electrodes.

Low-temperature plasma processing for Si photovoltaics

There has been a recent rapid expansion of the range of applications of low-temperature plasma processing in Si-based photovoltaic (PV) technologies. The desire to produce Si-based PV materials at an acceptable cost with consistent performance and reproducibility has stimulated a large number of major research and research infrastructure programs, and a rapidly increasing number of publications in the field of low-temperature plasma processing for Si photovoltaics. In this article, we introduce the low-temperature plasma sources for Si photovoltaic applications and discuss the effects of low-temperature plasma dissociation and deposition on the synthesis of Si-based thin films. We also examine the relevant growth mechanisms and plasma diagnostics, Si thin-film solar cells, Si heterojunction solar cells and silicon nitride materials for antireflection and surface passivation. Special attention is paid to the low-temperature plasma interactions with Si materials including hydrogen interaction, wafer cleaning, masked or mask-free surface texturization, the direct formation of p-n junction, and removal of phosphorus silicate glass or parasitic emitters. The chemical and physical interactions in such plasmas with Si surfaces are analyzed. Several examples of the plasma processes and techniques are selected to represent a variety of applications aimed at the improvement of Si-based solar cell performance. © 2014 Elsevier B.V.

Low-temperature plasmas in carbon nanostructure synthesis

Plasma-based techniques offer many unique possibilities for the synthesis of various nanostructures both on the surface and in the plasma bulk. In contrast to the conventional chemical vapor deposition and some other techniques, plasma-based processes ensure high level of controllability, good quality of the produced nanomaterials, and reduced environmental risk. In this work, the authors briefly review the unique features of the plasma-enhanced chemical vapor deposition approaches, namely, the techniques based on inductively coupled, microwave, and arc discharges. Specifically, the authors consider the plasmas with the ion/electron density ranging from 10^10 to 10^14 cm−3, electron energy in the discharge up to ∼10 eV, and the operating pressure ranging from 1 to 10^4 Pa (up to 105 Pa for the atmospheric-pressure arc discharges). The operating frequencies of the discharges considered range from 460 kHz for the inductively coupled plasmas, and up to 2.45 GHz for the microwave plasmas. The features of the direct-current arc discharges are also examined. The authors also discuss the principles of operation of these systems, as well as the effects of the key plasma parameters on the conditions of nucleation and growth of the carbon nanostructures, mainly carbon nanotubes and graphene. Advantages and disadvantages of these plasma systems are considered. Future trends in the development of these plasma-based systems are also discussed.

Minimizing the Gibbs–Thomson effect in the low-temperature plasma synthesis of thin Si nanowires

An advanced combination of numerical models, including plasma sheath, ion- and radical-induced species creation and plasma heating effects on the surface and within a Au catalyst nanoparticle, is used to describe the catalyzed growth of Si nanowires in the sheath of a low-temperature and low-pressure plasma. These models have been used to explain the higher nanowire growth rates, low-energy barriers, much thinner Si nanowire nucleation and the less effective Gibbs–Thomson effect in reactive plasma processes, compared with those of neutral gas thermal processes. The effects of variation in the plasma sheath parameters and substrate potential on Si nanowire nucleation and growth have also been investigated. It is shown that increasing the plasma-related effects leads to decreases in the nucleation energy barrier and the critical nanoparticle radius, with the Gibbs–Thomson effect diminished, even at low temperatures. The results obtained are consistent with available experimental results and open a path toward the energy- and matter-efficient nucleation and growth of a broad range of one-dimensional quantum structures.

Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

A simple, effective and innovative approach based on low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution. The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3-4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of ∼1.27-2.34 nm s-1 and at a low substrate temperature of 200 °C. The achievement of the high-rate growth of Si QDs embedded in the a-SiC without any commonly used hydrogen dilution is discussed based on the unique properties of the inductively coupled plasma-based process. This work is particularly important for the development of the all-Si tandem cell-based third generation photovoltaic solar cells.

Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas : enabling nanocrystallinity at very low hydrogen dilution

Nanocrystalline silicon thin films were deposited on single-crystal silicon and glass substrates simultaneously by inductively coupled plasma-assisted chemical vapor deposition from the reactive silane reactant gas diluted with hydrogen at a substrate temperature of 200 °C. The effect of hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen to silane gas), ranging from 1 to 20, on the structural and optical properties of the deposited films, is extensively investigated by Raman spectroscopy, X-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/VIS spectroscopy, and scanning electron microscopy. Our experimental results reveal that, with the increase of the hydrogen dilution ratio X, the deposition rate Rd and hydrogen content CH are reduced while the crystalline fraction Fc, mean grain size δ and optical bandgap ETauc are increased. In comparison with other plasma enhanced chemical vapor deposition methods of nanocrystalline silicon films where a very high hydrogen dilution ratio X is routinely required (e.g. X > 16), we have achieved nanocrystalline silicon films at a very low hydrogen dilution ratio of 1, featuring a high deposition rate of 1.57 nm/s, a high crystalline fraction of 67.1%, a very low hydrogen content of 4.4 at.%, an optical bandgap of 1.89 eV, and an almost vertically aligned columnar structure with a mean grain size of approximately 19 nm. We have also shown that a sufficient amount of atomic hydrogen on the growth surface essential for the formation of nanocrystalline silicon is obtained through highly-effective dissociation of silane and hydrogen molecules in the high-density inductively coupled plasmas. © 2009 The Royal Society of Chemistry.