Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth. © 2012 American Chemical Society.

Defects in GaSb studied by coincidence Doppler broadening measurements

Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.

Defects in GaSb studied by coincidence Doppler broadening measurements

Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.

Photoluminescence measurements on erbium-doped silicon

Erbium-implanted silicones were treated by lamp-heating rapid thermal annealing (RTA). Two types of erbium-related photoluminescence spectra appear under different anneal temperatures. 750 degrees C annealing optimizes the luminescence intensity, which does not change with anneal time. Exciton-mediated energy transfer model in erbium-doped silicon was presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium-bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6.6 meV and 47.4 meV respectively.

Two-photon excitation with pico-second fluorescence lifetime imaging to detect nuclear association of flavanols

Two-photon excitation enabled for the first time the observation and measurement of excited state fluorescence lifetimes from three flavanols in solution, which were ∼1.0 ns for catechin and epicatechin, but <45 ps for epigallocatechin gallate (EGCG). The shorter lifetime for EGCG is in line with a lower fluorescence quantum yield of 0.003 compared to catechin (0.015) and epicatechin (0.018). In vivo experiments with onion cells demonstrated that tryptophan and quercetin, which tend to be major contributors of background fluorescence in plant cells, have sufficiently low cross sections for two-photon excitation at 630 nm and therefore do not interfere with detection of externally added or endogenous flavanols in Allium cepa or Taxus baccata cells. Applying two-photon excitation to flavanols enabled 3-D fluorescence lifetime imaging microscopy and showed that added EGCG penetrated the whole nucleus of onion cells. Interestingly, EGCG and catechin showed different lifetime behaviour when bound to the nucleus: EGCG lifetime increased from <45 to 200 ps, whilst catechin lifetime decreased from 1.0 ns to 500 ps. Semi-quantitative measurements revealed that the relative ratios of EGCG concentrations in nucleoli associated vesicles: nucleus: cytoplasm were ca. 100:10:1. Solution experiments with catechin, epicatechin and histone proteins provided preliminary evidence, via the appearance of a second lifetime (τ2 = 1.9–3.1 ns), that both flavanols may be interacting with histone proteins. We conclude that there is significant nuclear absorption of flavanols. This advanced imaging using two-photon excitation and biophysical techniques described here will prove valuable for probing the intracellular trafficking and functions of flavanols, such as EGCG, which is the major flavanol of green tea.

Comments on some recent measurements of anomalously steep N2O and O3tracer spectra in the stratospheric surf zone

Recent aircraft measurements, primarily in the extratropics, of the horizontal variance of nitrous oxide (N2O) and ozone (O3) in the middle stratosphere indicate that horizontal spectra of the tracer variance scale nearly as k−2, where k is the spatial wavenumber along the aircraft flight track [Strahan and Mahlman, 1994; Bacmeister et al., 1996]. This spectral scaling has been regarded as inconsistent with the accepted picture of stratospheric tracer motion; large-scale quasi-two-dimensional tracer advection typically yields a k−1 scaling (i.e., the classical Batchelor spectrum). In this paper it is argued that the nearly k−2 scaling seen in the measurements is a natural outcome of quasi-two-dimensional filamentation of the polar vortex edge. The accepted picture of stratospheric tracer motion can thus be retained: no additional physical processes are needed to account for deviations from the Batchelor spectrum. Our argument is based on the finite lifetime of tracer filaments and on the “singularity spectrum” associated with a one-dimensional field composed of randomly spaced jumps in concentration.

Combined D0 measurements constraining the CP-violating phase and width difference in the B-s(0) system

We combine the D0 measurement of the width difference between the light and heavy B-s(0) mass eigenstates and of the CP-violating mixing phase determined from the time-dependent angular distributions in the B-s(0)-> J/psi phi decays along with the charge asymmetry in semileptonic decays also measured with the D0 detector. With the additional constraint from the world average of the flavor-specific B-s(0) lifetime, we obtain Delta Gamma(s)equivalent to(Gamma(L)-Gamma(H))=0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=0.70(-0.47)(+0.39) or Delta Gamma(s)=-0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=2.44(-0.39)(+0.47). The data sample corresponds to an integrated luminosity of 1.1 fb(-1) accumulated with the D0 detector at the Fermilab Tevatron Collider.

Measurement of the Lambda(0)(b) lifetime using semileptonic decays

We report a measurement of the Lambda(0)(b) lifetime using a sample corresponding to 1.3 fb(-1) of data collected by the D0 experiment in 2002-2006 during run II of the Fermilab Tevatron collider. The Lambda(0)(b) baryon is reconstructed via the decay Lambda(0)(b)->mu(nu) over bar Lambda X-+(c). Using 4437 +/- 329 signal candidates, we measure the Lambda(0)(b) lifetime to be tau(Lambda(0)(b))=1.290(-0.110)(+0.119)(stat)(-0.091)(+0.087)(syst) ps, which is among the most precise measurements in semileptonic Lambda(0)(b) decays. This result is in good agreement with the world average value.

Measurement of the Lambda(0)(b) lifetime in the decay Lambda(0)(b)-> J/psi Lambda(0) with the D0 detector

We present measurements of the Lambda(b)(0) lifetime in the exclusive decay channel Lambda(b)(0)-> J/psi Lambda(0), with J/psi ->mu(+)mu(-) and Lambda(0)-> p pi(-), the B-0 lifetime in the decay B-0-> J/psi K-S(0) with J/psi ->mu(+)mu(-) and K-S(0)->pi(+)pi(-), and the ratio of these lifetimes. The analysis is based on approximately 250 pb(-1) of data recorded with the D0 detector in p (p) over bar collisions at root s = 1.96 TeV. The Lambda(b)(0) lifetime is determined to be tau(Lambda(b)(0))=1.22(-0.18)(+0.22)(stat)+/- 0.04(syst) ps, the B-0 lifetime tau(B-0)=1.40(-) (+0.11)(0.10)(stat)+/- 0.03(syst) ps, and the ratio tau(Lambda(b)(0))/tau(B-0)=0.87(-) (+0.17)(0.14)(stat)+/- 0.03(syst). In contrast with previous measurements using semileptonic decays, this is the first determination of the Lambda(b)(0) lifetime based on a fully reconstructed decay channel.

Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Precision measurements of the ∧c + and D0 lifetimes

A measurement technique of charm baryons lifetimes from hadro-production data was presented. The measurement verified the lifetime analysis procedure in a sample with higher statistical precision. Other effects studied include mass reflections; effects of the presence of a second charm particle; and mismeasurement of charm decays. Monte carlo simulations were used for the detailed study of systematic effects using the charm data.

Measurement of the angular and lifetime parameters of the decays Bd0→J/ψK*0 and Bs0→J/ψ

We present measurements of the linear polarization amplitudes and the strong relative phases that describe the flavor-untagged decays Bd0→J/ψK*0 and Bs0→J/ψ in the transversity basis. We also measure the mean lifetime τ̄s of the Bs0 mass eigenstates and the lifetime ratio τ̄s/τd. The analyses are based on approximately 2.8fb-1 of data recorded with the D0 detector. From our measurements of the angular parameters we conclude that there is no evidence for a deviation from flavor SU(3) symmetry for these decays and that the factorization assumption is not valid for the Bd0→J/ψK*0 decay. © 2009 The American Physical Society.

Measurement of the Λb0 lifetime in the exclusive decay Λb0→J/ψΛ0 in pp̄ collisions at √s=1.96TeV

We measure the Λb0 lifetime in the fully reconstructed decay Λb0→J/ψΛ0 using 10.4fb -1 of pp̄ collisions collected with the D0 detector at √s=1.96TeV. The lifetime of the topologically similar decay channel B0→J/ψKS0 is also measured. We obtain τ(Λb0)=1.303±0.075(stat)±0.035(syst)ps and τ(B0)=1.508±0.025(stat)±0.043(syst)ps. Using these measurements, we determine the lifetime ratio of τ(Λb0)/τ(B0)=0. 864±0.052(stat)±0.033(syst). © 2012 American Physical Society.