Improved uniformity of target illumination by combining a lens array and the technique of spectral dispersion

A scheme using a lens array and the technique of spectral dispersion is presented to improve target illumination uniformity in laser produced plasmas. Detailed two-dimensional simulation shows that a quasi-near-field target pattern, of steeper edges and without side lobes, is achieved with a lens array, while interference stripes inside the pattern are smoothed out by the use of the spectral dispersion technique. Moving the target slightly from the exact focal plane of the principal focusing lens can eliminate middle-scale-length intensity fluctuation further. Numerical results indicate that a well-irradiated laser spot with small nonuniformity and great energy efficiency can be obtained in this scheme. (c) 2007 American Institute of Physics.

Towards a complete dense geometric and photometric reconstruction under varying pose and illumination

This paper proposes a novel framework to construct a geometric and photometric model of a viewed object that can be used for visualisation in arbitrary pose and illumination. The method is solely based on images and does not require any specialised equipment. We assume that the object has a piece-wise smooth surface and that its reflectance can be modelled using a parametric bidirectional reflectance distribution function. Without assuming any prior knowledge on the object, geometry and reflectance have to be estimated simultaneously and occlusion and shadows have to be treated consistently. We exploit the geometric and photometric consistency using the fact that surface orientation and reflectance are local invariants. In a first implementation, we demonstrate the method using a Lambertian object placed on a turn-table and illuminated by a number of unknown point light-sources. A discrete voxel model is initialised to the visual hull and voxels identified as inconsistent with the invariants are removed iteratively. The resulting model is used to render images in novel pose and illumination. © 2004 Elsevier B.V. All rights reserved.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.